SIGC54T60R3EX7SA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT 3 CHIP 600V 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
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Технічний опис SIGC54T60R3EX7SA1 Infineon Technologies
Description: IGBT 3 CHIP 600V 100A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A, Supplier Device Package: Die, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A.