Результат пошуку "tk-2-k" : 9
Вид перегляду :
Мінімальне замовлення: 5
Мінімальне замовлення: 10
| Фото | Назва | Виробник | Інформація |
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TK2K2A60F,S4X | Toshiba |
 MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS |
на замовлення 450 шт: термін постачання 217-226 дні (днів) |
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TK2K2A60F,S4X(S | TOSHIBA |
Description: TOSHIBA - TK2K2A60F,S4X(S - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 1.82 ohm, TO-220SIS, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-220SIS Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.82ohm SVHC: Boric acid (14-Jun-2023) |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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TK2K2A60F,S4X | Toshiba |
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS Tube |
товар відсутній |
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TK2K2A60F,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 350µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V |
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TK2K2A60F,S4X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
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TK2K2A60F,S4X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| TK2K2A60F,S4X(S | Toshiba | PWR-MOSFET N-CHANNEL |
товар відсутній |
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| TK2K2A60FS4X(S | Toshiba |
Toshiba |
товар відсутній |
| TK2K2A60F,S4X |
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Виробник: Toshiba
MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
на замовлення 450 шт:
термін постачання 217-226 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.56 грн |
| 10+ | 53.23 грн |
| 100+ | 33.61 грн |
| 500+ | 28.08 грн |
| 1000+ | 21.95 грн |
| 2500+ | 21.74 грн |
| 5000+ | 20.79 грн |
| TK2K2A60F,S4X(S |
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Виробник: TOSHIBA
Description: TOSHIBA - TK2K2A60F,S4X(S - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 1.82 ohm, TO-220SIS, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-220SIS
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.82ohm
SVHC: Boric acid (14-Jun-2023)
Description: TOSHIBA - TK2K2A60F,S4X(S - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 1.82 ohm, TO-220SIS, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-220SIS
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.82ohm
SVHC: Boric acid (14-Jun-2023)
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 77.23 грн |
| 12+ | 64.46 грн |
| TK2K2A60F,S4X |
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Виробник: Toshiba
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS Tube
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS Tube
товар відсутній
| TK2K2A60F,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
товар відсутній
| TK2K2A60F,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK2K2A60F,S4X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній