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AS4C32M16D3-12BCNTR AS4C32M16D3-12BCNTR Alliance Memory 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BI-1154297.pdf DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3-12BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.5V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16D3-12BIN AS4C32M16D3-12BIN Alliance Memory 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BI-1154297.pdf DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
1+428.6 грн
10+ 386.2 грн
25+ 327.28 грн
100+ 293.76 грн
190+ 292.45 грн
570+ 284.56 грн
1140+ 266.82 грн
AS4C32M16D3-12BIN ALLIANCE MEMORY 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BIN-12BCN_June2017_Rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 32Mx16bit
товар відсутній
AS4C32M16D3-12BINTR AS4C32M16D3-12BINTR Alliance Memory 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BI-1154297.pdf DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3-12BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.5V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16D3L-12BCN ALLIANCE MEMORY AS4C32M16D3L-12BIN,%2012BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BIN ALLIANCE MEMORY AS4C32M16D3L-12BIN,%2012BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BCN AS4C32M16D3L-12BCN Alliance Memory 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
на замовлення 610 шт:
термін постачання 21-30 дні (днів)
1+387.96 грн
10+ 349.17 грн
25+ 297.71 грн
50+ 295.74 грн
100+ 264.85 грн
190+ 263.53 грн
1140+ 247.1 грн
AS4C32M16D3L-12BCN ALLIANCE MEMORY AS4C32M16D3L-12BIN,%2012BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BCNTR AS4C32M16D3L-12BCNTR Alliance Memory 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3L-12BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16D3L-12BIN AS4C32M16D3L-12BIN Alliance Memory 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
1+429.37 грн
10+ 386.2 грн
25+ 329.25 грн
50+ 327.28 грн
100+ 299.68 грн
570+ 284.56 грн
1140+ 266.82 грн
AS4C32M16D3L-12BIN ALLIANCE MEMORY AS4C32M16D3L-12BIN,%2012BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BINTR AS4C32M16D3L-12BINTR Alliance Memory 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3L-12BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16MD1-5BCN AS4C32M16MD1-5BCN Alliance Memory 512M-AS4C32M16MD1_mobile-1-275193.pdf DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
AS4C32M16MD1-5BIN Alliance Memory 512M-AS4C32M16MD1_mobile-1-275193.pdf DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
товар відсутній
AS4C32M16MD1-5BINTR Alliance Memory 512M-AS4C32M16MD1_mobile-1-275193.pdf DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
товар відсутній
AS4C32M16MD1A-5BCN ALLIANCE MEMORY 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M16MD1A-5BCNTR ALLIANCE MEMORY 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16MD1A-5BCN AS4C32M16MD1A-5BCN Alliance Memory 512Mb_LPDDR_1.8V_rev1.2 July 2016_AS4C32M16MD1A-5-1265346.pdf DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
1+429.37 грн
10+ 386.2 грн
25+ 329.91 грн
50+ 327.28 грн
100+ 293.76 грн
250+ 292.45 грн
480+ 273.39 грн
AS4C32M16MD1A-5BCN ALLIANCE MEMORY 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M16MD1A-5BCNTR Alliance Memory 512Mb_LPDDR_1.8V_rev1.2 July 2016_AS4C32M16MD1A-5-1265346.pdf DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
товар відсутній
AS4C32M16MD1A-5BCNTR ALLIANCE MEMORY 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16MD1A-5BIN Alliance Memory 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5-1265346.pdf DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
товар відсутній
AS4C32M16MD1A-5BINTR Alliance Memory 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5-1265346.pdf DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
товар відсутній
AS4C32M16MS-6BIN AS4C32M16MS-6BIN Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
на замовлення 904 шт:
термін постачання 21-30 дні (днів)
AS4C32M16MS-6BINTR Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
товар відсутній
AS4C32M16MS-7BCN AS4C32M16MS-7BCN Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 133MHz 32Mx16 LP MSDR
на замовлення 2534 шт:
термін постачання 21-30 дні (днів)
AS4C32M16MSA-6BIN ALLIANCE MEMORY 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16MSA-6BINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16MSA-6BIN AS4C32M16MSA-6BIN Alliance Memory 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA--1282155.pdf DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
на замовлення 263 шт:
термін постачання 21-30 дні (днів)
1+588.84 грн
10+ 535.09 грн
25+ 455.43 грн
50+ 453.46 грн
100+ 406.8 грн
250+ 394.97 грн
500+ 375.26 грн
AS4C32M16MSA-6BIN ALLIANCE MEMORY 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16MSA-6BINTR AS4C32M16MSA-6BINTR Alliance Memory 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA--1282155.pdf DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
товар відсутній
AS4C32M16MSA-6BINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16SA-7BCN ALLIANCE MEMORY 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C32M16SA-7BIN ALLIANCE MEMORY 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v3.0%20May%202015_TSOP_BGA%20.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C32M16SA-7TCNTR AS4C32M16SA-7TCNTR ALLIANCE MEMORY 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7TIN AS4C32M16SA-7TIN ALLIANCE MEMORY 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7TINTR AS4C32M16SA-7TINTR ALLIANCE MEMORY 512M-SDRAM.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7BCN Alliance Memory 512M SDRAM_A Rev_AS4C32M16SA v4.0 Mar 2016_TSOP_BG-1288393.pdf DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
товар відсутній
AS4C32M16SA-7BCNTR AS4C32M16SA-7BCNTR Alliance Memory 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf DRAM 512M 3.3V 143MHz 32M x 16 COM TEMP
товар відсутній
AS4C32M16SA-7BIN Alliance Memory 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
на замовлення 347 шт:
термін постачання 21-30 дні (днів)
AS4C32M16SA-7BIN ALLIANCE MEMORY 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v3.0%20May%202015_TSOP_BGA%20.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C32M16SA-7BINTR AS4C32M16SA-7BINTR Alliance Memory 512M SDRAM_A Rev_AS4C32M16SA v4.0 Mar 2016_TSOP_BG-1288393.pdf DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
товар відсутній
AS4C32M16SA-7TCN Alliance Memory 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf DRAM 512M, 3.3V, 32M x 16 SDRAM
на замовлення 692 шт:
термін постачання 21-30 дні (днів)
AS4C32M16SA-7TCNTR AS4C32M16SA-7TCNTR Alliance Memory 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf DRAM 512M, 3.3V, 32M x 16 SDRAM
товар відсутній
AS4C32M16SA-7TCNTR AS4C32M16SA-7TCNTR ALLIANCE MEMORY 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7TIN Alliance Memory 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf DRAM 512M, 3.3V, 32M x 16 SDRAM
на замовлення 1074 шт:
термін постачання 21-30 дні (днів)
AS4C32M16SA-7TINTR AS4C32M16SA-7TINTR Alliance Memory 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf DRAM 512M, 3.3V, 32M x 16 SDRAM
товар відсутній
AS4C32M16SA-7TINTR AS4C32M16SA-7TINTR ALLIANCE MEMORY 512M-SDRAM.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TIN AS4C32M16SB-6TIN ALLIANCE MEMORY 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201.0%20June%202016.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TINTR AS4C32M16SB-6TINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BIN AS4C32M16SB-7BIN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BINTR AS4C32M16SB-7BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TCN AS4C32M16SB-7TCN ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
1+1103.64 грн
2+ 728.39 грн
4+ 688.68 грн
108+ 666.09 грн
AS4C32M16SB-7TCNTR AS4C32M16SB-7TCNTR ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16D3-12BCNTR 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BI-1154297.pdf
AS4C32M16D3-12BCNTR
Виробник: Alliance Memory
DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3-12BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.5V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16D3-12BIN 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BI-1154297.pdf
AS4C32M16D3-12BIN
Виробник: Alliance Memory
DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+428.6 грн
10+ 386.2 грн
25+ 327.28 грн
100+ 293.76 грн
190+ 292.45 грн
570+ 284.56 грн
1140+ 266.82 грн
AS4C32M16D3-12BIN 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BIN-12BCN_June2017_Rev1.0.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 32Mx16bit
товар відсутній
AS4C32M16D3-12BINTR 20170928_AllianceMemory_512M_DDR3_AS4C32M16D3-12BI-1154297.pdf
AS4C32M16D3-12BINTR
Виробник: Alliance Memory
DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3-12BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.5V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16D3L-12BCN AS4C32M16D3L-12BIN,%2012BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BIN AS4C32M16D3L-12BIN,%2012BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BCN 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf
AS4C32M16D3L-12BCN
Виробник: Alliance Memory
DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
на замовлення 610 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+387.96 грн
10+ 349.17 грн
25+ 297.71 грн
50+ 295.74 грн
100+ 264.85 грн
190+ 263.53 грн
1140+ 247.1 грн
AS4C32M16D3L-12BCN AS4C32M16D3L-12BIN,%2012BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BCNTR 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf
AS4C32M16D3L-12BCNTR
Виробник: Alliance Memory
DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3L-12BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16D3L-12BIN 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf
AS4C32M16D3L-12BIN
Виробник: Alliance Memory
DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+429.37 грн
10+ 386.2 грн
25+ 329.25 грн
50+ 327.28 грн
100+ 299.68 грн
570+ 284.56 грн
1140+ 266.82 грн
AS4C32M16D3L-12BIN AS4C32M16D3L-12BIN,%2012BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C32M16D3L-12BINTR 20171123_AllianceMemory_512M_DDR3L_AS4C32M16D3L-12-1288881.pdf
AS4C32M16D3L-12BINTR
Виробник: Alliance Memory
DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
товар відсутній
AS4C32M16D3L-12BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 1500 шт
товар відсутній
AS4C32M16MD1-5BCN 512M-AS4C32M16MD1_mobile-1-275193.pdf
AS4C32M16MD1-5BCN
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
AS4C32M16MD1-5BIN 512M-AS4C32M16MD1_mobile-1-275193.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
товар відсутній
AS4C32M16MD1-5BINTR 512M-AS4C32M16MD1_mobile-1-275193.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
товар відсутній
AS4C32M16MD1A-5BCN 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M16MD1A-5BCNTR 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16MD1A-5BCN 512Mb_LPDDR_1.8V_rev1.2 July 2016_AS4C32M16MD1A-5-1265346.pdf
AS4C32M16MD1A-5BCN
Виробник: Alliance Memory
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+429.37 грн
10+ 386.2 грн
25+ 329.91 грн
50+ 327.28 грн
100+ 293.76 грн
250+ 292.45 грн
480+ 273.39 грн
AS4C32M16MD1A-5BCN 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M16MD1A-5BCNTR 512Mb_LPDDR_1.8V_rev1.2 July 2016_AS4C32M16MD1A-5-1265346.pdf
Виробник: Alliance Memory
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
товар відсутній
AS4C32M16MD1A-5BCNTR 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5BCN.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16MD1A-5BIN 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5-1265346.pdf
Виробник: Alliance Memory
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
товар відсутній
AS4C32M16MD1A-5BINTR 512Mb_LPDDR_1.8V_rev1.2%20%20July%202016_AS4C32M16MD1A-5-1265346.pdf
Виробник: Alliance Memory
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
товар відсутній
AS4C32M16MS-6BIN 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
AS4C32M16MS-6BIN
Виробник: Alliance Memory
DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
на замовлення 904 шт:
термін постачання 21-30 дні (днів)
AS4C32M16MS-6BINTR 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
Виробник: Alliance Memory
DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
товар відсутній
AS4C32M16MS-7BCN 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
AS4C32M16MS-7BCN
Виробник: Alliance Memory
DRAM 512M 1.8V 133MHz 32Mx16 LP MSDR
на замовлення 2534 шт:
термін постачання 21-30 дні (днів)
AS4C32M16MSA-6BIN 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16MSA-6BINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16MSA-6BIN 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA--1282155.pdf
AS4C32M16MSA-6BIN
Виробник: Alliance Memory
DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
на замовлення 263 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+588.84 грн
10+ 535.09 грн
25+ 455.43 грн
50+ 453.46 грн
100+ 406.8 грн
250+ 394.97 грн
500+ 375.26 грн
AS4C32M16MSA-6BIN 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16MSA-6BINTR 20180115_AllianceMemory_512M_LPSDRAM_AS4C32M16MSA--1282155.pdf
AS4C32M16MSA-6BINTR
Виробник: Alliance Memory
DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
товар відсутній
AS4C32M16MSA-6BINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
товар відсутній
AS4C32M16SA-7BCN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C32M16SA-7BIN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v3.0%20May%202015_TSOP_BGA%20.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C32M16SA-7TCNTR 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf
AS4C32M16SA-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7TIN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf
AS4C32M16SA-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7TINTR 512M-SDRAM.pdf
AS4C32M16SA-7TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7BCN 512M SDRAM_A Rev_AS4C32M16SA v4.0 Mar 2016_TSOP_BG-1288393.pdf
Виробник: Alliance Memory
DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
товар відсутній
AS4C32M16SA-7BCNTR 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf
AS4C32M16SA-7BCNTR
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 COM TEMP
товар відсутній
AS4C32M16SA-7BIN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
на замовлення 347 шт:
термін постачання 21-30 дні (днів)
AS4C32M16SA-7BIN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v3.0%20May%202015_TSOP_BGA%20.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C32M16SA-7BINTR 512M SDRAM_A Rev_AS4C32M16SA v4.0 Mar 2016_TSOP_BG-1288393.pdf
AS4C32M16SA-7BINTR
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
товар відсутній
AS4C32M16SA-7TCN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf
Виробник: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
на замовлення 692 шт:
термін постачання 21-30 дні (днів)
AS4C32M16SA-7TCNTR 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf
AS4C32M16SA-7TCNTR
Виробник: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
товар відсутній
AS4C32M16SA-7TCNTR 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BGA.pdf
AS4C32M16SA-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SA-7TIN 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf
Виробник: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
на замовлення 1074 шт:
термін постачання 21-30 дні (днів)
AS4C32M16SA-7TINTR 512M%20SDRAM_A%20Rev_AS4C32M16SA%20v4.0%20Mar%202016_TSOP_BG-1288393.pdf
AS4C32M16SA-7TINTR
Виробник: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
товар відсутній
AS4C32M16SA-7TINTR 512M-SDRAM.pdf
AS4C32M16SA-7TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TIN 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201.0%20June%202016.pdf
AS4C32M16SB-6TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TINTR
AS4C32M16SB-6TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BIN Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7BIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BINTR Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7BINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TCN as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1103.64 грн
2+ 728.39 грн
4+ 688.68 грн
108+ 666.09 грн
AS4C32M16SB-7TCNTR as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
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