Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3594) > Сторінка 18 з 60
Фото | Назва | Виробник | Інформація |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 90Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C4M32S-7BCNTR | Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM |
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AS4C4M32S-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32S-7TCN | Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM |
на замовлення 421 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP86 Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz Kind of package: in-tray Kind of interface: parallel |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP86 Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz Kind of package: reel Kind of interface: parallel |
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AS4C4M32SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Operating temperature: -40...85°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP86 Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz Kind of package: reel Kind of interface: parallel |
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AS4C4M32SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP86 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32SA-6TCN | Alliance Memory | DRAM SDRAM,128M,3.3V 166Mhz,4M x 32 |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP86 Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz Kind of package: in-tray Kind of interface: parallel кількість в упаковці: 1 шт |
на замовлення 60 шт: термін постачання 7-14 дні (днів) |
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AS4C4M32SA-6TCNTR | Alliance Memory | DRAM SDRAM,128M,3.3V 166Mhz,4M x 32 |
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AS4C4M32SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP86 Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz Kind of package: reel Kind of interface: parallel кількість в упаковці: 1000 шт |
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AS4C4M32SA-6TIN | Alliance Memory | DRAM SDRAM,128M,3.3V 166Mhz,4M x 32 |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M32SA-6TIN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 86Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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AS4C4M32SA-6TINTR | Alliance Memory | DRAM SDRAM,128M,3.3V 166Mhz,4M x 32 |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Operating temperature: -40...85°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP86 Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz Kind of package: reel Kind of interface: parallel кількість в упаковці: 1000 шт |
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AS4C4M32SA-7TCN | Alliance Memory | DRAM SDRAM,128M,3.3V 143Mhz,4M x 32 |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-7TCNTR | Alliance Memory | DRAM SDRAM,128M,3.3V 143Mhz,4M x 32 |
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AS4C4M32SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP86 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C512M16D3L-12BCN | Alliance Memory | DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3L-12BCNTR | Alliance Memory | DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT |
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AS4C512M16D3L-12BIN | Alliance Memory | DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT |
на замовлення 2423 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3L-12BINTR | Alliance Memory | DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT |
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AS4C512M16D3LA-10BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-10BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel Type of integrated circuit: DRAM memory Operating voltage: 1.35V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Case: FBGA96 Access time: 13.91ns Clock frequency: 933MHz Memory organisation: 512Mx16bit Kind of package: reel |
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AS4C512M16D3LA-10BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-10BAN | Alliance Memory | DRAM 8G - Dual Die Package (DDP) 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 96-ball FBGA |
на замовлення 347 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3LA-10BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 180 шт |
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AS4C512M16D3LA-10BANTR | Alliance Memory | DRAM 8G - Dual Die Package (DDP) 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C~105 C) 96-ball FBGA |
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AS4C512M16D3LA-10BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-10BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M16D3LA-10BCN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 933 MHz, FBGA, 96 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 933MHz Anzahl der Pins: 96Pin(s) euEccn: NLR Speicherdichte: 8Gbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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AS4C512M16D3LA-10BCN | Alliance Memory | DRAM DRAM 8G 512Mx16 933MHz 1.35V DDR3 Commercial Temp Tape & Reel |
на замовлення 529 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3LA-10BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 180 шт |
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AS4C512M16D3LA-10BCNTR | Alliance Memory | DRAM DRAM 8G 512Mx16 933MHz 1.35V DDR3 Commercial Temp Tray |
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AS4C512M16D3LA-10BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel Type of integrated circuit: DRAM memory Operating voltage: 1.35V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Case: FBGA96 Access time: 13.91ns Clock frequency: 933MHz Memory organisation: 512Mx16bit Kind of package: reel кількість в упаковці: 2000 шт |
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AS4C512M16D3LA-10BIN | Alliance Memory | DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3LA-10BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BINTR | Alliance Memory | DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT |
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AS4C512M16D3LA-10BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-12BCN | Alliance Memory | DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET |
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AS4C512M16D3LA-12BCNTR | Alliance Memory | DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET |
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AS4C512M16D3LA-12BIN | Alliance Memory | DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT |
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AS4C512M16D3LA-12BINTR | Alliance Memory | DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT |
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AS4C512M16D3LB-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns Type of integrated circuit: DRAM memory Operating voltage: 1.35V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Memory: 8Gb DRAM Case: FBGA96 Access time: 13.75ns Clock frequency: 800MHz Memory organisation: 512Mx16bit Kind of package: in-tray |
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AS4C512M16D3LB-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LB-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LB-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LB-12BCN | Alliance Memory | DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A) |
на замовлення 1732 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3LB-12BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M16D3LB-12BCN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 800 MHz, FBGA, 96 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 800MHz Anzahl der Pins: 96Pin(s) euEccn: NLR Speicherdichte: 8Gbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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AS4C512M16D3LB-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns Type of integrated circuit: DRAM memory Operating voltage: 1.35V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Memory: 8Gb DRAM Case: FBGA96 Access time: 13.75ns Clock frequency: 800MHz Memory organisation: 512Mx16bit Kind of package: in-tray кількість в упаковці: 180 шт |
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AS4C512M16D3LB-12BCNTR | Alliance Memory | DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A), T&R |
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AS4C512M16D3LB-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2000 шт |
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AS4C512M16D3LB-12BIN | Alliance Memory | DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP (MT41K512M16HA-125IT:A) |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3LB-12BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M16D3LB-12BIN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 800 MHz, FBGA, 96 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 800MHz Anzahl der Pins: 96Pin(s) euEccn: NLR Speicherdichte: 8Gbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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AS4C512M16D3LB-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
товар відсутній |
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AS4C512M16D3LB-12BINTR | Alliance Memory | DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP (MT41K512M16HA-125IT:A)TAPE AND REEL |
товар відсутній |
AS4C4M32S-7BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 90Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 90Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 342.12 грн |
10+ | 295.54 грн |
25+ | 276.61 грн |
50+ | 246.71 грн |
100+ | 221.5 грн |
AS4C4M32S-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-7TCN |
Виробник: Alliance Memory
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
на замовлення 421 шт:
термін постачання 21-30 дні (днів)AS4C4M32SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
на замовлення 60 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 410.55 грн |
3+ | 261.59 грн |
9+ | 247.39 грн |
AS4C4M32SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
товар відсутній
AS4C4M32SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
товар відсутній
AS4C4M32SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32SA-6TCN |
Виробник: Alliance Memory
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 344.45 грн |
10+ | 307.45 грн |
25+ | 261.5 грн |
50+ | 260.21 грн |
108+ | 232.3 грн |
216+ | 231.01 грн |
540+ | 226.46 грн |
AS4C4M32SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 492.66 грн |
3+ | 325.98 грн |
9+ | 296.87 грн |
AS4C4M32SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M32SA-6TIN |
Виробник: Alliance Memory
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 427.73 грн |
10+ | 385.05 грн |
25+ | 325.74 грн |
108+ | 292 грн |
216+ | 290.7 грн |
540+ | 260.86 грн |
AS4C4M32SA-6TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M32SA-6TIN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 86Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M32SA-6TIN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 86Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 62 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 451.31 грн |
10+ | 389.44 грн |
25+ | 364.69 грн |
50+ | 325.8 грн |
AS4C4M32SA-6TINTR |
Виробник: Alliance Memory
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 448.93 грн |
10+ | 404.46 грн |
100+ | 306.93 грн |
250+ | 306.28 грн |
500+ | 286.81 грн |
1000+ | 273.18 грн |
2000+ | 270.59 грн |
AS4C4M32SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP86
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: reel
Kind of interface: parallel
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M32SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM,128M,3.3V 143Mhz,4M x 32
DRAM SDRAM,128M,3.3V 143Mhz,4M x 32
на замовлення 316 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 343.7 грн |
10+ | 306.7 грн |
25+ | 260.86 грн |
50+ | 260.21 грн |
108+ | 232.95 грн |
216+ | 231.66 грн |
540+ | 223.22 грн |
AS4C4M32SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C512M16D3L-12BCN |
Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
на замовлення 34 шт:
термін постачання 21-30 дні (днів)AS4C512M16D3L-12BCNTR |
Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
товар відсутній
AS4C512M16D3L-12BIN |
Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
на замовлення 2423 шт:
термін постачання 21-30 дні (днів)AS4C512M16D3L-12BINTR |
Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
товар відсутній
AS4C512M16D3LA-10BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.91ns
Clock frequency: 933MHz
Memory organisation: 512Mx16bit
Kind of package: reel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.91ns
Clock frequency: 933MHz
Memory organisation: 512Mx16bit
Kind of package: reel
товар відсутній
AS4C512M16D3LA-10BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BAN |
Виробник: Alliance Memory
DRAM 8G - Dual Die Package (DDP) 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 96-ball FBGA
DRAM 8G - Dual Die Package (DDP) 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 96-ball FBGA
на замовлення 347 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2464.17 грн |
10+ | 2284.2 грн |
25+ | 1857.13 грн |
100+ | 1633.91 грн |
180+ | 1622.23 грн |
540+ | 1563.18 грн |
1080+ | 1530.09 грн |
AS4C512M16D3LA-10BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 180 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 180 шт
товар відсутній
AS4C512M16D3LA-10BANTR |
Виробник: Alliance Memory
DRAM 8G - Dual Die Package (DDP) 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C~105 C) 96-ball FBGA
DRAM 8G - Dual Die Package (DDP) 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C~105 C) 96-ball FBGA
товар відсутній
AS4C512M16D3LA-10BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M16D3LA-10BCN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 933 MHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 933MHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C512M16D3LA-10BCN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 933 MHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 933MHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2015.63 грн |
5+ | 1830.73 грн |
10+ | 1776.87 грн |
25+ | 1626.97 грн |
50+ | 1473.74 грн |
AS4C512M16D3LA-10BCN |
Виробник: Alliance Memory
DRAM DRAM 8G 512Mx16 933MHz 1.35V DDR3 Commercial Temp Tape & Reel
DRAM DRAM 8G 512Mx16 933MHz 1.35V DDR3 Commercial Temp Tape & Reel
на замовлення 529 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1957.71 грн |
10+ | 1814.83 грн |
25+ | 1476.23 грн |
50+ | 1475.58 грн |
100+ | 1299.73 грн |
180+ | 1249.77 грн |
540+ | 1225.11 грн |
AS4C512M16D3LA-10BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 180 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 180 шт
товар відсутній
AS4C512M16D3LA-10BCNTR |
Виробник: Alliance Memory
DRAM DRAM 8G 512Mx16 933MHz 1.35V DDR3 Commercial Temp Tray
DRAM DRAM 8G 512Mx16 933MHz 1.35V DDR3 Commercial Temp Tray
товар відсутній
AS4C512M16D3LA-10BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.91ns
Clock frequency: 933MHz
Memory organisation: 512Mx16bit
Kind of package: reel
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.91ns
Clock frequency: 933MHz
Memory organisation: 512Mx16bit
Kind of package: reel
кількість в упаковці: 2000 шт
товар відсутній
AS4C512M16D3LA-10BIN |
Виробник: Alliance Memory
DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
на замовлення 117 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2211.32 грн |
10+ | 2049.89 грн |
25+ | 1666.36 грн |
100+ | 1467.15 грн |
180+ | 1426.92 грн |
540+ | 1402.26 грн |
1080+ | 1373.06 грн |
AS4C512M16D3LA-10BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BINTR |
Виробник: Alliance Memory
DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
товар відсутній
AS4C512M16D3LA-10BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 933MHz; 13.91ns; FBGA96; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-12BCNTR |
Виробник: Alliance Memory
DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
товар відсутній
AS4C512M16D3LA-12BINTR |
Виробник: Alliance Memory
DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
товар відсутній
AS4C512M16D3LB-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx16bit
Kind of package: in-tray
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx16bit
Kind of package: in-tray
товар відсутній
AS4C512M16D3LB-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LB-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LB-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LB-12BCN |
Виробник: Alliance Memory
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A)
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A)
на замовлення 1732 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1958.47 грн |
10+ | 1815.57 грн |
25+ | 1478.18 грн |
50+ | 1474.94 грн |
100+ | 1299.09 грн |
180+ | 1245.23 грн |
540+ | 1239.39 грн |
AS4C512M16D3LB-12BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M16D3LB-12BCN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 800 MHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C512M16D3LB-12BCN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 800 MHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2015.63 грн |
5+ | 1830.73 грн |
10+ | 1776.87 грн |
25+ | 1626.97 грн |
50+ | 1473.74 грн |
AS4C512M16D3LB-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx16bit
Kind of package: in-tray
кількість в упаковці: 180 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Case: FBGA96
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx16bit
Kind of package: in-tray
кількість в упаковці: 180 шт
товар відсутній
AS4C512M16D3LB-12BCNTR |
Виробник: Alliance Memory
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A), T&R
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A), T&R
товар відсутній
AS4C512M16D3LB-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2000 шт
товар відсутній
AS4C512M16D3LB-12BIN |
Виробник: Alliance Memory
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP (MT41K512M16HA-125IT:A)
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP (MT41K512M16HA-125IT:A)
на замовлення 513 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2153.79 грн |
10+ | 2006.61 грн |
25+ | 1652.73 грн |
50+ | 1642.35 грн |
100+ | 1622.23 грн |
180+ | 1441.19 грн |
540+ | 1433.41 грн |
AS4C512M16D3LB-12BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M16D3LB-12BIN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 800 MHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C512M16D3LB-12BIN - DRAM, DDR3L, 8 Gbit, 512M x 16 Bit, 800 MHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2276.22 грн |
5+ | 2066.58 грн |
10+ | 2006.16 грн |
25+ | 1836.5 грн |
50+ | 1664.04 грн |
AS4C512M16D3LB-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LB-12BINTR |
Виробник: Alliance Memory
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP (MT41K512M16HA-125IT:A)TAPE AND REEL
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ INDUSTRIAL TEMP (MT41K512M16HA-125IT:A)TAPE AND REEL
товар відсутній