Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3592) > Сторінка 23 з 60
| Фото | Назва | Виробник | Інформація |
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| AS4C64M32MD1A-5BINTR | ALLIANCE MEMORY |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 2Gb DRAM Memory organisation: 64Mx32bit Clock frequency: 200MHz Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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| AS4C64M32MD1A-5BIN | Alliance Memory |
DRAM |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M32MD1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C Kind of memory: SDRAM Memory: 2Gb DRAM Operating temperature: -40...85°C Operating voltage: 1.8V Clock frequency: 200MHz Mounting: SMD Kind of package: in-tray Memory organisation: 64Mx32bit Type of integrated circuit: DRAM memory Case: FBGA90 кількість в упаковці: 240 шт |
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| AS4C64M32MD1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 2Gb DRAM Memory organisation: 64Mx32bit Clock frequency: 200MHz Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 2000 шт |
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| AS4C64M32MD2-25BCN | Alliance Memory |
DRAM 2G 1.2V/1.8V 400MHz 64Mx32 Mobile DDR2 |
на замовлення 123 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M32MD2-25BCNTR | Alliance Memory |
DRAM 2G 1.2V/1.8V 400MHz 64Mx32 Mobile DDR2 |
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| AS4C64M32MD2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx32bit; 1.8V; 400MHz; FBGA134; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx32bit Clock frequency: 400MHz Case: FBGA134 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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| AS4C64M32MD2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory: 2Gb DRAM Memory organisation: 64Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.2...1.8V |
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AS4C64M32MD2A-25BIN | Alliance Memory |
DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M32MD2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx32bit; 1.8V; 400MHz; FBGA134; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx32bit Clock frequency: 400MHz Case: FBGA134 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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| AS4C64M32MD2A-25BINTR | Alliance Memory |
DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp |
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| AS4C64M32MD2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory: 2Gb DRAM Memory organisation: 64Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.2...1.8V кількість в упаковці: 2000 шт |
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AS4C64M4SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C64M4SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C64M4SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C64M4SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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| AS4C64M4SA-6TIN | Alliance Memory |
DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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AS4C64M4SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C64M4SA-6TINTR | Alliance Memory |
DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp |
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AS4C64M4SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C64M4SA-7TCN | Alliance Memory |
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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AS4C64M4SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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| AS4C64M4SA-7TCNTR | Alliance Memory |
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM |
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AS4C64M4SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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| AS4C64M4SA-7TIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM |
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| AS4C64M4SA-7TINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM |
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| AS4C64M8D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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| AS4C64M8D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Operating temperature: 0...70°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 64Mx8bit Type of integrated circuit: DRAM memory Case: FBGA60 |
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| AS4C64M8D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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| AS4C64M8D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Operating temperature: -40...95°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 64Mx8bit Type of integrated circuit: DRAM memory Case: FBGA60 |
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| AS4C64M8D1-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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| AS4C64M8D1-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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| AS4C64M8D1-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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| AS4C64M8D1-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
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| AS4C64M8D1-5BCN | Alliance Memory |
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1 |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M8D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 240 шт |
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| AS4C64M8D1-5BCNTR | Alliance Memory |
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1 |
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| AS4C64M8D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Operating temperature: 0...70°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 64Mx8bit Type of integrated circuit: DRAM memory Case: FBGA60 кількість в упаковці: 2500 шт |
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AS4C64M8D1-5BIN | Alliance Memory |
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M8D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 240 шт |
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| AS4C64M8D1-5BINTR | Alliance Memory |
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1 |
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| AS4C64M8D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Operating temperature: -40...95°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 64Mx8bit Type of integrated circuit: DRAM memory Case: FBGA60 кількість в упаковці: 2500 шт |
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| AS4C64M8D1-5TCN | Alliance Memory |
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1 |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M8D1-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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| AS4C64M8D1-5TCNTR | Alliance Memory |
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1 |
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| AS4C64M8D1-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M8D1-5TIN | Alliance Memory |
DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M8D1-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5TINTR | Alliance Memory |
DRAM |
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| AS4C64M8D1-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
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| AS4C64M8D2-25BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.8V |
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| AS4C64M8D2-25BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.8V |
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| AS4C64M8D2-25BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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| AS4C64M8D2-25BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...85°C Kind of package: reel Operating voltage: 1.8V |
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| AS4C64M8D2-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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| AS4C64M8D2-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.8V |
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AS4C64M8D2-25BAN | Alliance Memory |
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2 |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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| AS4C64M8D2-25BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.8V |
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| AS4C64M8D2-25BANTR | Alliance Memory |
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2 |
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| AS4C64M8D2-25BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.8V |
товар відсутній |
| AS4C64M32MD1A-5BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 200MHz
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 200MHz
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
| AS4C64M32MD1A-5BIN |
|
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 658.62 грн |
| 10+ | 598.57 грн |
| 25+ | 509.32 грн |
| 50+ | 508.01 грн |
| AS4C64M32MD1A-5BIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
Kind of memory: SDRAM
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Operating voltage: 1.8V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: in-tray
Memory organisation: 64Mx32bit
Type of integrated circuit: DRAM memory
Case: FBGA90
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
Kind of memory: SDRAM
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Operating voltage: 1.8V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: in-tray
Memory organisation: 64Mx32bit
Type of integrated circuit: DRAM memory
Case: FBGA90
кількість в упаковці: 240 шт
товар відсутній
| AS4C64M32MD1A-5BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 200MHz
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 200MHz
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
| AS4C64M32MD2-25BCN |
|
Виробник: Alliance Memory
DRAM 2G 1.2V/1.8V 400MHz 64Mx32 Mobile DDR2
DRAM 2G 1.2V/1.8V 400MHz 64Mx32 Mobile DDR2
на замовлення 123 шт:
термін постачання 21-30 дні (днів)| AS4C64M32MD2-25BCNTR |
|
Виробник: Alliance Memory
DRAM 2G 1.2V/1.8V 400MHz 64Mx32 Mobile DDR2
DRAM 2G 1.2V/1.8V 400MHz 64Mx32 Mobile DDR2
товар відсутній
| AS4C64M32MD2A-25BIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx32bit; 1.8V; 400MHz; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Case: FBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx32bit; 1.8V; 400MHz; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Case: FBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
| AS4C64M32MD2A-25BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
товар відсутній
| AS4C64M32MD2A-25BIN |
|
Виробник: Alliance Memory
DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 750.62 грн |
| 10+ | 685.48 грн |
| 25+ | 582.27 грн |
| 50+ | 579.64 грн |
| 100+ | 518.52 грн |
| 171+ | 484.35 грн |
| 513+ | 479.09 грн |
| AS4C64M32MD2A-25BIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx32bit; 1.8V; 400MHz; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Case: FBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx32bit; 1.8V; 400MHz; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Case: FBGA134
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
| AS4C64M32MD2A-25BINTR |
|
Виробник: Alliance Memory
DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
DRAM 2G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
товар відсутній
| AS4C64M32MD2A-25BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory: 2Gb DRAM
Memory organisation: 64Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 2000 шт
товар відсутній
| AS4C64M4SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-7TCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-6TIN |
|
Виробник: Alliance Memory
DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp
DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| AS4C64M4SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-6TINTR |
|
Виробник: Alliance Memory
DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp
DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp
товар відсутній
| AS4C64M4SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-7TCN |
|
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| AS4C64M4SA-7TCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
| AS4C64M4SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
| AS4C64M8D1-5BCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5BCNTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
товар відсутній
| AS4C64M8D1-5BIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...95°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...95°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
товар відсутній
| AS4C64M8D1-5TCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5TCNTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5TIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5TINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5BCN |
|
Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| AS4C64M8D1-5BCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
| AS4C64M8D1-5BCNTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
товар відсутній
| AS4C64M8D1-5BIN |
|
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 390.26 грн |
| 10+ | 306.84 грн |
| 100+ | 266.16 грн |
| 240+ | 249.08 грн |
| 480+ | 237.9 грн |
| 2640+ | 233.3 грн |
| 5040+ | 222.79 грн |
| AS4C64M8D1-5BIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
| AS4C64M8D1-5BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...95°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...95°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 64Mx8bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
товар відсутній
| AS4C64M8D1-5TCN |
|
Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| AS4C64M8D1-5TCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5TCNTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5TIN |
|
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray
DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 367.26 грн |
| 10+ | 328.76 грн |
| 108+ | 249.08 грн |
| 2592+ | 247.76 грн |
| 5076+ | 246.45 грн |
| 10044+ | 245.13 грн |
| AS4C64M8D1-5TIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D1-5TINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
| AS4C64M8D2-25BAN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BANTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BCN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BCNTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BIN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BINTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BAN |
|
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 142 шт:
термін постачання 21-30 дні (днів)| AS4C64M8D2-25BAN |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
| AS4C64M8D2-25BANTR |
|
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній