Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3594) > Сторінка 24 з 60
Фото | Назва | Виробник | Інформація |
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AS4C64M8D2-25BCN | Alliance Memory | DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2 |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D2-25BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C64M8D2-25BCNTR | Alliance Memory | DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2 |
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AS4C64M8D2-25BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Case: FBGA60 Mounting: SMD Operating temperature: 0...85°C Operating voltage: 1.8V Clock frequency: 400MHz Memory organisation: 64Mx8bit Access time: 12.5ns Kind of package: reel кількість в упаковці: 2000 шт |
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AS4C64M8D2-25BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.8V Taktfrequenz, max.: 400MHz Anzahl der Pins: 60Pin(s) euEccn: NLR Speicherdichte: 512Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 264 шт: термін постачання 21-31 дні (днів) |
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AS4C64M8D2-25BIN | Alliance Memory | DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2 |
на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D2-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C64M8D2-25BINTR | Alliance Memory | DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2 |
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AS4C64M8D2-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Case: FBGA60 Mounting: SMD Operating temperature: -40...95°C Operating voltage: 1.8V Clock frequency: 400MHz Memory organisation: 64Mx8bit Access time: 12.5ns Kind of package: reel кількість в упаковці: 2000 шт |
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AS4C64M8D3-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: in-tray Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: 0...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: reel Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: 0...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: in-tray Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: -40...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: reel Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: -40...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BCN | Alliance Memory | DRAM 512M 1.5V 800Mhz 64M x 8 DDR3 |
на замовлення 472 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D3-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: in-tray Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: 0...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BCNTR | Alliance Memory | DRAM 512M 1.5V 800Mhz 64M x 8 DDR3 |
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AS4C64M8D3-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: reel Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: 0...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BIN | Alliance Memory | DRAM 512M 1.5V 800Mhz 64M x 8 DDR3 |
на замовлення 484 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D3-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: in-tray Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: -40...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3-12BINTR | Alliance Memory | DRAM 512M 1.5V 800Mhz 64M x 8 DDR3 |
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AS4C64M8D3-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C Memory capacity: 512Mb Access time: 13.75ns Case: FBGA78 Mounting: SMD Kind of package: reel Kind of memory: DDR3; SDRAM Clock frequency: 800MHz Operating temperature: -40...95°C Operating voltage: 1.5V Type of integrated circuit: DRAM memory Memory organisation: 64Mx8bit |
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AS4C64M8D3L-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C64M8D3L-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 512Mb DRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C64M8D3L-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C64M8D3L-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 512Mb DRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C64M8D3L-12BCN | Alliance Memory | DRAM 512M 1.35V 800Mhz 64M x 8 DDR3 |
на замовлення 484 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D3L-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C64M8D3L-12BCNTR | Alliance Memory | DRAM 512M 1.35V 800Mhz 64M x 8 DDR3 |
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AS4C64M8D3L-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 512Mb DRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2500 шт |
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AS4C64M8D3L-12BIN | Alliance Memory | DRAM 512M 1.35V 800Mhz 64M x 8 DDR3 |
на замовлення 484 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D3L-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C64M8D3L-12BINTR | Alliance Memory | DRAM 512M 1.35V 800Mhz 64M x 8 DDR3 |
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AS4C64M8D3L-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 512Mb DRAM Memory organisation: 64Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2500 шт |
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AS4C64M8SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 133MHz Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 133MHz Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C64M8SC-7TIN | Alliance Memory | DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp |
на замовлення 122 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 133MHz Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 228 шт: термін постачання 7-14 дні (днів) |
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AS4C64M8SC-7TINTR | Alliance Memory | DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp |
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AS4C64M8SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 133MHz Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Operating temperature: 0...70°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 8Mx16bit Type of integrated circuit: DRAM memory Case: FBGA60 |
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AS4C8M16D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; -40÷85°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; reel Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Operating temperature: -40...85°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 8Mx16bit Type of integrated circuit: DRAM memory Case: FBGA60 |
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AS4C8M16D1-5BCN | Alliance Memory | DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Commercial Temp - Tray |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1-5BCNTR | Alliance Memory | DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 |
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AS4C8M16D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Operating temperature: 0...70°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 8Mx16bit Type of integrated circuit: DRAM memory Case: FBGA60 кількість в упаковці: 2500 шт |
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AS4C8M16D1-5BIN | Alliance Memory | DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Industrial Temp - Tray |
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AS4C8M16D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; -40÷85°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1-5BINTR | Alliance Memory | DRAM |
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AS4C8M16D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; reel Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Operating temperature: -40...85°C Operating voltage: 2.5V Clock frequency: 200MHz Mounting: SMD Kind of package: reel Memory organisation: 8Mx16bit Type of integrated circuit: DRAM memory Case: FBGA60 кількість в упаковці: 2500 шт |
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AS4C8M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C8M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C8M16D1A-5BCN | Alliance Memory | DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 |
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AS4C8M16D1A-5BCNTR | Alliance Memory | DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 |
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AS4C8M16D1A-5TAN | Alliance Memory | DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16D1A-5TANTR | Alliance Memory | DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 |
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AS4C8M16D1A-5TCN | Alliance Memory | DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D2-25BCN |
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 164 шт:
термін постачання 21-30 дні (днів)AS4C64M8D2-25BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Case: FBGA60
Mounting: SMD
Operating temperature: 0...85°C
Operating voltage: 1.8V
Clock frequency: 400MHz
Memory organisation: 64Mx8bit
Access time: 12.5ns
Kind of package: reel
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Case: FBGA60
Mounting: SMD
Operating temperature: 0...85°C
Operating voltage: 1.8V
Clock frequency: 400MHz
Memory organisation: 64Mx8bit
Access time: 12.5ns
Kind of package: reel
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 400MHz
Anzahl der Pins: 60Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 400MHz
Anzahl der Pins: 60Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 264 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 427.6 грн |
10+ | 369.35 грн |
25+ | 345.76 грн |
50+ | 308.74 грн |
100+ | 276.78 грн |
250+ | 274.88 грн |
AS4C64M8D2-25BIN |
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 466.17 грн |
10+ | 419.45 грн |
25+ | 355.54 грн |
50+ | 346.34 грн |
AS4C64M8D2-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Case: FBGA60
Mounting: SMD
Operating temperature: -40...95°C
Operating voltage: 1.8V
Clock frequency: 400MHz
Memory organisation: 64Mx8bit
Access time: 12.5ns
Kind of package: reel
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Case: FBGA60
Mounting: SMD
Operating temperature: -40...95°C
Operating voltage: 1.8V
Clock frequency: 400MHz
Memory organisation: 64Mx8bit
Access time: 12.5ns
Kind of package: reel
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D3-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BCN |
Виробник: Alliance Memory
DRAM 512M 1.5V 800Mhz 64M x 8 DDR3
DRAM 512M 1.5V 800Mhz 64M x 8 DDR3
на замовлення 472 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 420.93 грн |
10+ | 378.64 грн |
25+ | 323.34 грн |
50+ | 320.71 грн |
AS4C64M8D3-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: 0...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BIN |
Виробник: Alliance Memory
DRAM 512M 1.5V 800Mhz 64M x 8 DDR3
DRAM 512M 1.5V 800Mhz 64M x 8 DDR3
на замовлення 484 шт:
термін постачання 21-30 дні (днів)AS4C64M8D3-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.5V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Memory capacity: 512Mb
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Kind of package: reel
Kind of memory: DDR3; SDRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Operating voltage: 1.5V
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx8bit
товар відсутній
AS4C64M8D3L-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C64M8D3L-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C64M8D3L-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C64M8D3L-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C64M8D3L-12BCN |
Виробник: Alliance Memory
DRAM 512M 1.35V 800Mhz 64M x 8 DDR3
DRAM 512M 1.35V 800Mhz 64M x 8 DDR3
на замовлення 484 шт:
термін постачання 21-30 дні (днів)AS4C64M8D3L-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C64M8D3L-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D3L-12BIN |
Виробник: Alliance Memory
DRAM 512M 1.35V 800Mhz 64M x 8 DDR3
DRAM 512M 1.35V 800Mhz 64M x 8 DDR3
на замовлення 484 шт:
термін постачання 21-30 дні (днів)AS4C64M8D3L-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C64M8D3L-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 512Mb DRAM
Memory organisation: 64Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8SC-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 228 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 878.05 грн |
3+ | 770.83 грн |
108+ | 746.19 грн |
AS4C64M8SC-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M8SC-7TIN |
Виробник: Alliance Memory
DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp
на замовлення 122 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1311.86 грн |
10+ | 1197.14 грн |
25+ | 1014.05 грн |
108+ | 989.73 грн |
AS4C64M8SC-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 228 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1053.65 грн |
3+ | 960.57 грн |
108+ | 895.42 грн |
AS4C64M8SC-7TINTR |
Виробник: Alliance Memory
DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C64M8SC-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 3.3V; 133MHz; TSOP54 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 133MHz
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
товар відсутній
AS4C8M16D1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; -40÷85°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; -40÷85°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: -40...85°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: -40...85°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
товар відсутній
AS4C8M16D1-5BCN |
Виробник: Alliance Memory
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Commercial Temp - Tray
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Commercial Temp - Tray
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 277.55 грн |
10+ | 247.89 грн |
100+ | 191.24 грн |
240+ | 185.33 грн |
480+ | 181.38 грн |
1200+ | 176.78 грн |
2640+ | 172.18 грн |
AS4C8M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: 0...70°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
товар відсутній
AS4C8M16D1-5BIN |
Виробник: Alliance Memory
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Industrial Temp - Tray
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Industrial Temp - Tray
товар відсутній
AS4C8M16D1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; -40÷85°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; FBGA60; -40÷85°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: -40...85°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 8Mx16bit; 2.5V; 200MHz; FBGA60; reel
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Operating temperature: -40...85°C
Operating voltage: 2.5V
Clock frequency: 200MHz
Mounting: SMD
Kind of package: reel
Memory organisation: 8Mx16bit
Type of integrated circuit: DRAM memory
Case: FBGA60
кількість в упаковці: 2500 шт
товар відсутній
AS4C8M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TAN |
Виробник: Alliance Memory
DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
на замовлення 103 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 306.69 грн |
10+ | 273.59 грн |
25+ | 231.99 грн |
50+ | 231.33 грн |
108+ | 225.42 грн |
216+ | 206.36 грн |
540+ | 201.1 грн |
AS4C8M16D1A-5TCN |
Виробник: Alliance Memory
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die
на замовлення 408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.42 грн |
10+ | 196.5 грн |
108+ | 147.21 грн |
540+ | 136.04 грн |
2592+ | 132.75 грн |
5076+ | 123.55 грн |
10044+ | 118.95 грн |