Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3603) > Сторінка 7 з 61
Фото | Назва | Виробник | Інформація |
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AS4C16M16SA-7BCNTR | Alliance Memory | DRAM |
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AS4C16M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C16M16SA-7TCN | Alliance Memory | DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray |
на замовлення 11480 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 706 шт: термін постачання 7-14 дні (днів) |
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AS4C16M16SA-7TCNTR | Alliance Memory | DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Quantity in set/package: 1000pcs. Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 2656 шт: термін постачання 7-14 дні (днів) |
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AS4C16M16SB-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C16M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SB-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C16M16SB-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C16M16SB-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 256Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SB-6BIN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-6TIN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray |
на замовлення 834 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C16M16SB-6TINTR | Alliance Memory | DRAM |
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AS4C16M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SB-7TCN | Alliance Memory | DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray |
на замовлення 2516 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C16M16SB-7TCNTR | Alliance Memory | DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel |
на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C16M32MD1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -25...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C16M32MD1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -25...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C16M32MD1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 1.8V |
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AS4C16M32MD1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C16M32MD1-5BCN | Alliance Memory | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MD1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -25...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C16M32MD1-5BCNTR | Alliance Memory | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR |
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AS4C16M32MD1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -25...85°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 1000 шт |
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AS4C16M32MD1-5BIN | Alliance Memory | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MD1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 1.8V |
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AS4C16M32MD1-5BINTR | Alliance Memory | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR |
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AS4C16M32MD1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 1000 шт |
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AS4C16M32MS-6BIN | Alliance Memory | DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR |
на замовлення 992 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MS-7BCN | Alliance Memory | DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR |
на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSA-6BIN | Alliance Memory | DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT |
на замовлення 612 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSA-6BINTR | Alliance Memory | DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT |
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AS4C16M32MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSB-6BIN | Alliance Memory | DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP |
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AS4C16M32MSB-6BINTR | Alliance Memory | DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R |
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AS4C16M32SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3...3.6V |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3...3.6V |
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AS4C16M32SC-7TIN | Alliance Memory | DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3...3.6V |
на замовлення 126 шт: термін постачання 7-14 дні (днів) |
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AS4C16M32SC-7TINTR | Alliance Memory | DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp |
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AS4C16M32SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3...3.6V |
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AS4C1G16D4-062BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 1Gx8bit Clock frequency: 1600MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.2V |
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AS4C1G16D4-062BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 1Gx8bit Clock frequency: 1600MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.2V |
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AS4C1G16D4-062BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.2V Taktfrequenz, max.: 1.6GHz Anzahl der Pins: 96Pin(s) euEccn: NLR Speicherdichte: 16Gbit hazardous: false rohsPhthalatesCompliant: TBA Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 1140 шт: термін постачання 21-31 дні (днів) |
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AS4C1G16D4-062BCN | Alliance Memory | DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray |
на замовлення 386 шт: термін постачання 21-30 дні (днів) |
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AS4C1G16D4-062BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 1Gx8bit Clock frequency: 1600MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.2V |
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AS4C1G16D4-062BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 1Gx8bit Clock frequency: 1600MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.2V |
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AS4C1G8D3LA-10BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Memory capacity: 8Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C1G8D3LA-10BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C1G8D3LA-10BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
товар відсутній |
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AS4C1G8D3LA-10BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
товар відсутній |
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AS4C1G8D3LA-10BAN | Alliance Memory | DRAM 8G - Dual Die Package (DDP) 1G x 8 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 78-ball FBGA (Two 1Gbitx4 dies stacked) |
товар відсутній |
AS4C16M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 11480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.78 грн |
10+ | 271.1 грн |
108+ | 205.77 грн |
216+ | 205.11 грн |
540+ | 197.78 грн |
1080+ | 187.79 грн |
2592+ | 178.47 грн |
AS4C16M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 96 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 298.82 грн |
10+ | 257.73 грн |
25+ | 241.29 грн |
50+ | 215.74 грн |
AS4C16M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 706 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 368.44 грн |
4+ | 249.82 грн |
11+ | 227.25 грн |
108+ | 220.59 грн |
AS4C16M16SA-7TCNTR |
Виробник: Alliance Memory
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
на замовлення 840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 311.55 грн |
10+ | 278.76 грн |
100+ | 211.77 грн |
250+ | 210.44 грн |
500+ | 203.11 грн |
1000+ | 191.12 грн |
2000+ | 190.46 грн |
AS4C16M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 2656 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 372.92 грн |
4+ | 267.11 грн |
11+ | 243.07 грн |
1000+ | 239.74 грн |
AS4C16M16SB-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 256Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 425.81 грн |
10+ | 367.55 грн |
25+ | 344.39 грн |
50+ | 307.3 грн |
100+ | 275.98 грн |
AS4C16M16SB-6BIN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
на замовлення 132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 417.21 грн |
10+ | 375.25 грн |
100+ | 285.69 грн |
250+ | 284.35 грн |
348+ | 273.7 грн |
1044+ | 267.71 грн |
2784+ | 263.04 грн |
AS4C16M16SB-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 834 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 304.55 грн |
10+ | 269.57 грн |
108+ | 211.77 грн |
216+ | 209.77 грн |
540+ | 192.46 грн |
2592+ | 187.13 грн |
5076+ | 178.47 грн |
AS4C16M16SB-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 2516 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 296.01 грн |
10+ | 258.08 грн |
108+ | 201.11 грн |
216+ | 199.78 грн |
540+ | 192.46 грн |
1080+ | 187.79 грн |
5076+ | 169.15 грн |
AS4C16M16SB-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C16M16SB-7TCNTR |
Виробник: Alliance Memory
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 304.55 грн |
10+ | 271.87 грн |
100+ | 206.44 грн |
250+ | 205.77 грн |
500+ | 198.45 грн |
1000+ | 191.79 грн |
2000+ | 181.13 грн |
AS4C16M16SB-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BCN |
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 417.21 грн |
10+ | 365.3 грн |
100+ | 285.69 грн |
250+ | 273.7 грн |
480+ | 254.39 грн |
1120+ | 253.72 грн |
2560+ | 251.72 грн |
AS4C16M32MD1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR |
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BIN |
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 475.48 грн |
10+ | 428.1 грн |
100+ | 324.98 грн |
250+ | 324.31 грн |
480+ | 316.99 грн |
1120+ | 311.66 грн |
2560+ | 307 грн |
AS4C16M32MD1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR |
Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MS-6BIN |
Виробник: Alliance Memory
DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
на замовлення 992 шт:
термін постачання 21-30 дні (днів)AS4C16M32MS-7BCN |
Виробник: Alliance Memory
DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)AS4C16M32MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BIN |
Виробник: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
на замовлення 612 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 549.29 грн |
10+ | 498.55 грн |
25+ | 422.87 грн |
100+ | 379.58 грн |
190+ | 375.59 грн |
570+ | 349.62 грн |
1140+ | 337.63 грн |
AS4C16M32MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR |
Виробник: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
товар відсутній
AS4C16M32MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSB-6BIN |
Виробник: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
товар відсутній
AS4C16M32MSB-6BINTR |
Виробник: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
товар відсутній
AS4C16M32SC-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1095.91 грн |
3+ | 962.14 грн |
108+ | 956.59 грн |
AS4C16M32SC-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M32SC-7TIN |
Виробник: Alliance Memory
DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray
DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray
на замовлення 131 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1148.29 грн |
10+ | 1047.65 грн |
25+ | 887.69 грн |
108+ | 777.15 грн |
216+ | 744.52 грн |
540+ | 739.19 грн |
1080+ | 692.57 грн |
AS4C16M32SC-7TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1315.09 грн |
3+ | 1198.97 грн |
108+ | 1147.91 грн |
AS4C16M32SC-7TINTR |
Виробник: Alliance Memory
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C16M32SC-7TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C1G16D4-062BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.6GHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 16Gbit
hazardous: false
rohsPhthalatesCompliant: TBA
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.6GHz
Anzahl der Pins: 96Pin(s)
euEccn: NLR
Speicherdichte: 16Gbit
hazardous: false
rohsPhthalatesCompliant: TBA
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1794.4 грн |
10+ | 1548.62 грн |
25+ | 1448.52 грн |
50+ | 1294.41 грн |
100+ | 1161.55 грн |
AS4C1G16D4-062BCN |
Виробник: Alliance Memory
DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray
DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray
на замовлення 386 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1579.49 грн |
10+ | 1449.71 грн |
25+ | 1216.66 грн |
100+ | 1068.16 грн |
190+ | 1052.84 грн |
570+ | 1024.87 грн |
1140+ | 976.93 грн |
AS4C1G16D4-062BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G8D3LA-10BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BAN |
Виробник: Alliance Memory
DRAM 8G - Dual Die Package (DDP) 1G x 8 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 78-ball FBGA (Two 1Gbitx4 dies stacked)
DRAM 8G - Dual Die Package (DDP) 1G x 8 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Automotive(-40 C-105 C) 78-ball FBGA (Two 1Gbitx4 dies stacked)
товар відсутній