Продукція > ADVANCED LINEAR DEVICES INC. > Всі товари виробника ADVANCED LINEAR DEVICES INC. (521) > Сторінка 1 з 9

Обрати Сторінку:   1 2 3 4 5 6 7 8 9  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
ALD1101APAL Advanced Linear Devices Inc. ALD1101.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1101ASAL ALD1101ASAL Advanced Linear Devices Inc. ALD1101.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+628.88 грн
50+ 483.08 грн
ALD1101BPAL Advanced Linear Devices Inc. ALD1101.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1101BSAL ALD1101BSAL Advanced Linear Devices Inc. ALD1101.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1101PAL ALD1101PAL Advanced Linear Devices Inc. ALD1101.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
1+548.92 грн
50+ 421.62 грн
ALD1101SAL ALD1101SAL Advanced Linear Devices Inc. ALD1101.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1102APAL ALD1102APAL Advanced Linear Devices Inc. ALD1102.pdf Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1102ASAL ALD1102ASAL Advanced Linear Devices Inc. ALD1102.pdf Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1102BPAL ALD1102BPAL Advanced Linear Devices Inc. ALD1102.pdf Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1102BSAL ALD1102BSAL Advanced Linear Devices Inc. ALD1102.pdf Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1102PAL ALD1102PAL Advanced Linear Devices Inc. ALD1102.pdf Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+548.92 грн
50+ 421.62 грн
ALD1102SAL ALD1102SAL Advanced Linear Devices Inc. ALD1102.pdf Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+412.77 грн
ALD1103PBL ALD1103PBL Advanced Linear Devices Inc. ALD1103.pdf Description: MOSFET 2N/2P-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
1+607.27 грн
50+ 467.1 грн
100+ 417.93 грн
ALD1103SBL ALD1103SBL Advanced Linear Devices Inc. ALD1103.pdf Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
1+546.76 грн
50+ 420.39 грн
ALD1105PBL ALD1105PBL Advanced Linear Devices Inc. ALD1105.pdf Description: MOSFET 2N/2P-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
1+441.58 грн
50+ 336.92 грн
100+ 288.79 грн
ALD1105SBL ALD1105SBL Advanced Linear Devices Inc. ALD1105.pdf Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+396.92 грн
ALD1106PBL ALD1106PBL Advanced Linear Devices Inc. ALD1106.pdf Description: MOSFET 4N-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+441.58 грн
50+ 336.92 грн
ALD1106SBL ALD1106SBL Advanced Linear Devices Inc. ALD1106.pdf Description: MOSFET 4N-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 3564 шт:
термін постачання 21-31 дні (днів)
1+399.08 грн
50+ 304.32 грн
100+ 260.85 грн
500+ 217.6 грн
1000+ 186.32 грн
2000+ 175.44 грн
ALD1107PBL ALD1107PBL Advanced Linear Devices Inc. ALD1107.pdf Description: MOSFET 4P-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 383 шт:
термін постачання 21-31 дні (днів)
1+441.58 грн
25+ 336.94 грн
100+ 288.79 грн
ALD1107SBL ALD1107SBL Advanced Linear Devices Inc. ALD1107.pdf Description: MOSFET 4P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+399.08 грн
ALD110800APCL ALD110800APCL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+633.2 грн
ALD110800ASCL ALD110800ASCL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
1+570.53 грн
50+ 438.82 грн
ALD110800PCL ALD110800PCL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+422.13 грн
ALD110800SCL ALD110800SCL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110802PCL ALD110802PCL Advanced Linear Devices Inc. ALD110802.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110802SCL ALD110802SCL Advanced Linear Devices Inc. ALD110802.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110804PCL ALD110804PCL Advanced Linear Devices Inc. ALD110804.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110804SCL ALD110804SCL Advanced Linear Devices Inc. ALD110804.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110808APCL ALD110808APCL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110808ASCL ALD110808ASCL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110808PCL ALD110808PCL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110808SCL ALD110808SCL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110814PCL ALD110814PCL Advanced Linear Devices Inc. ALD110814.pdf Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110814SCL ALD110814SCL Advanced Linear Devices Inc. ALD110814.pdf Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+418.53 грн
ALD1108EPCL ALD1108EPCL Advanced Linear Devices Inc. ALD1108E.pdf Description: MOSFET 4N-CH 10V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD1108ESCL ALD1108ESCL Advanced Linear Devices Inc. ALD1108E.pdf Description: MOSFET 4N-CH 10V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110900APAL ALD110900APAL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110900ASAL ALD110900ASAL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110900PAL ALD110900PAL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
1+427.18 грн
ALD110900SAL ALD110900SAL Advanced Linear Devices Inc. ALD110800.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
1+331.37 грн
50+ 252.69 грн
100+ 216.6 грн
ALD110902PAL Advanced Linear Devices Inc. ALD110802.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110902SAL ALD110902SAL Advanced Linear Devices Inc. ALD110802.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+331.37 грн
ALD110904PAL Advanced Linear Devices Inc. ALD110804.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110904SAL ALD110904SAL Advanced Linear Devices Inc. ALD110804.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110908APAL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110908ASAL ALD110908ASAL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110908PAL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110908SAL ALD110908SAL Advanced Linear Devices Inc. ALD110808.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110914PAL Advanced Linear Devices Inc. ALD110814.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110914SAL ALD110914SAL Advanced Linear Devices Inc. ALD110814.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1110EPAL ALD1110EPAL Advanced Linear Devices Inc. ALD1108E.pdf Description: MOSFET 2N-CH 10V 8DIP
товар відсутній
ALD1110ESAL ALD1110ESAL Advanced Linear Devices Inc. ALD1108E.pdf Description: MOSFET 2N-CH 10V 8SOIC
товар відсутній
ALD1115MAL ALD1115MAL Advanced Linear Devices Inc. ALD1115.pdf Description: MOSFET N/P-CH 10.6V 8MSOP
товар відсутній
ALD1115PAL ALD1115PAL Advanced Linear Devices Inc. ALD1115.pdf Description: MOSFET N/P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+376.03 грн
ALD1115SAL ALD1115SAL Advanced Linear Devices Inc. ALD1115.pdf Description: MOSFET N/P-CH 10.6V 8SOIC
товар відсутній
ALD1116PAL ALD1116PAL Advanced Linear Devices Inc. ALD1116.pdf Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
1+376.03 грн
50+ 286.67 грн
ALD1116SAL ALD1116SAL Advanced Linear Devices Inc. ALD1116.pdf Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 3546 шт:
термін постачання 21-31 дні (днів)
2+283.1 грн
50+ 216.01 грн
100+ 185.16 грн
500+ 154.46 грн
1000+ 132.25 грн
2000+ 124.53 грн
Мінімальне замовлення: 2
ALD1117PAL ALD1117PAL Advanced Linear Devices Inc. ALD1107.pdf Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+376.03 грн
ALD1117SAL ALD1117SAL Advanced Linear Devices Inc. ALD1107.pdf Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
2+283.1 грн
50+ 216.01 грн
100+ 185.16 грн
500+ 154.46 грн
Мінімальне замовлення: 2
ALD111910MAL Advanced Linear Devices Inc. Description: MOSFET 2N-CH 8MSOP
товар відсутній
ALD1101APAL ALD1101.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1101ASAL ALD1101.pdf
ALD1101ASAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+628.88 грн
50+ 483.08 грн
ALD1101BPAL ALD1101.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1101BSAL ALD1101.pdf
ALD1101BSAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1101PAL ALD1101.pdf
ALD1101PAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+548.92 грн
50+ 421.62 грн
ALD1101SAL ALD1101.pdf
ALD1101SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1102APAL ALD1102.pdf
ALD1102APAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1102ASAL ALD1102.pdf
ALD1102ASAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1102BPAL ALD1102.pdf
ALD1102BPAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD1102BSAL ALD1102.pdf
ALD1102BSAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1102PAL ALD1102.pdf
ALD1102PAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+548.92 грн
50+ 421.62 грн
ALD1102SAL ALD1102.pdf
ALD1102SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+412.77 грн
ALD1103PBL ALD1103.pdf
ALD1103PBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+607.27 грн
50+ 467.1 грн
100+ 417.93 грн
ALD1103SBL ALD1103.pdf
ALD1103SBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+546.76 грн
50+ 420.39 грн
ALD1105PBL ALD1105.pdf
ALD1105PBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+441.58 грн
50+ 336.92 грн
100+ 288.79 грн
ALD1105SBL ALD1105.pdf
ALD1105SBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+396.92 грн
ALD1106PBL ALD1106.pdf
ALD1106PBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+441.58 грн
50+ 336.92 грн
ALD1106SBL ALD1106.pdf
ALD1106SBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 3564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+399.08 грн
50+ 304.32 грн
100+ 260.85 грн
500+ 217.6 грн
1000+ 186.32 грн
2000+ 175.44 грн
ALD1107PBL ALD1107.pdf
ALD1107PBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4P-CH 10.6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
на замовлення 383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+441.58 грн
25+ 336.94 грн
100+ 288.79 грн
ALD1107SBL ALD1107.pdf
ALD1107SBL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+399.08 грн
ALD110800APCL ALD110800.pdf
ALD110800APCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+633.2 грн
ALD110800ASCL ALD110800.pdf
ALD110800ASCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+570.53 грн
50+ 438.82 грн
ALD110800PCL ALD110800.pdf
ALD110800PCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+422.13 грн
ALD110800SCL ALD110800.pdf
ALD110800SCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110802PCL ALD110802.pdf
ALD110802PCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110802SCL ALD110802.pdf
ALD110802SCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110804PCL ALD110804.pdf
ALD110804PCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110804SCL ALD110804.pdf
ALD110804SCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110808APCL ALD110808.pdf
ALD110808APCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110808ASCL ALD110808.pdf
ALD110808ASCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110808PCL ALD110808.pdf
ALD110808PCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110808SCL ALD110808.pdf
ALD110808SCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110814PCL ALD110814.pdf
ALD110814PCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD110814SCL ALD110814.pdf
ALD110814SCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+418.53 грн
ALD1108EPCL ALD1108E.pdf
ALD1108EPCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
товар відсутній
ALD1108ESCL ALD1108E.pdf
ALD1108ESCL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
товар відсутній
ALD110900APAL ALD110800.pdf
ALD110900APAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110900ASAL ALD110800.pdf
ALD110900ASAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110900PAL ALD110800.pdf
ALD110900PAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+427.18 грн
ALD110900SAL ALD110800.pdf
ALD110900SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+331.37 грн
50+ 252.69 грн
100+ 216.6 грн
ALD110902PAL ALD110802.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110902SAL ALD110802.pdf
ALD110902SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+331.37 грн
ALD110904PAL ALD110804.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110904SAL ALD110804.pdf
ALD110904SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110908APAL ALD110808.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110908ASAL ALD110808.pdf
ALD110908ASAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110908PAL ALD110808.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110908SAL ALD110808.pdf
ALD110908SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD110914PAL ALD110814.pdf
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
товар відсутній
ALD110914SAL ALD110814.pdf
ALD110914SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
товар відсутній
ALD1110EPAL ALD1108E.pdf
ALD1110EPAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10V 8DIP
товар відсутній
ALD1110ESAL ALD1108E.pdf
ALD1110ESAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10V 8SOIC
товар відсутній
ALD1115MAL ALD1115.pdf
ALD1115MAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET N/P-CH 10.6V 8MSOP
товар відсутній
ALD1115PAL ALD1115.pdf
ALD1115PAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET N/P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+376.03 грн
ALD1115SAL ALD1115.pdf
ALD1115SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET N/P-CH 10.6V 8SOIC
товар відсутній
ALD1116PAL ALD1116.pdf
ALD1116PAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+376.03 грн
50+ 286.67 грн
ALD1116SAL ALD1116.pdf
ALD1116SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 3546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+283.1 грн
50+ 216.01 грн
100+ 185.16 грн
500+ 154.46 грн
1000+ 132.25 грн
2000+ 124.53 грн
Мінімальне замовлення: 2
ALD1117PAL ALD1107.pdf
ALD1117PAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+376.03 грн
ALD1117SAL ALD1107.pdf
ALD1117SAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+283.1 грн
50+ 216.01 грн
100+ 185.16 грн
500+ 154.46 грн
Мінімальне замовлення: 2
ALD111910MAL
Виробник: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 8MSOP
товар відсутній
Обрати Сторінку:   1 2 3 4 5 6 7 8 9  [ Наступна Сторінка >> ]