Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3876) > Сторінка 37 з 65
Фото | Назва | Виробник | Інформація |
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AONS66612 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A/100A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONS66612 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A/100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
на замовлення 5116 шт: термін постачання 21-31 дні (днів) |
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AONS66612T | Alpha & Omega Semiconductor Inc. |
Description: 60V N-CHANNEL ALPHASGT Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONS66612T | Alpha & Omega Semiconductor Inc. |
Description: 60V N-CHANNEL ALPHASGT Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
на замовлення 5978 шт: термін постачання 21-31 дні (днів) |
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AONS66614 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V |
товар відсутній |
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AONS66614 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V |
на замовлення 651 шт: термін постачання 21-31 дні (днів) |
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AONS66615 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONS66615 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONS66620 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 36.5W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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AONS66620 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 36.5W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V |
товар відсутній |
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AONS66641 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
товар відсутній |
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AONS66641 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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AONS66811 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V Power Dissipation (Max): 7.5W (Ta), 258W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V |
товар відсутній |
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AONS66811 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V Power Dissipation (Max): 7.5W (Ta), 258W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V |
на замовлення 1914 шт: термін постачання 21-31 дні (днів) |
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AONS66817 | Alpha & Omega Semiconductor Inc. |
Description: SINGLE Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 40 V |
товар відсутній |
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AONS66908 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 158A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V |
товар відсутній |
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AONS66909 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V |
товар відсутній |
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AONS66916 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V |
товар відсутній |
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AONS66916 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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AONS66917 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V |
на замовлення 1739 шт: термін постачання 21-31 дні (днів) |
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AONS66917 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V |
товар відсутній |
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AONS66919 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
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AONS66919 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V |
товар відсутній |
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AONS66920 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 17.5A/48A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 56.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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AONS66920 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 17.5A/48A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 56.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 113269 шт: термін постачання 21-31 дні (днів) |
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AONS66923 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 15A/47A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AONS66923 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 15A/47A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 16415 шт: термін постачання 21-31 дні (днів) |
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AONS66966 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 31.3A/100A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONS66966 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 31.3A/100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 215W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V |
на замовлення 5658 шт: термін постачання 21-31 дні (днів) |
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AONS67614 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V |
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AONS850A70 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V Power Dissipation (Max): 4.1W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V |
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AONT21313C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V |
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AONV070V65G1 | Alpha & Omega Semiconductor Inc. |
Description: GAN Packaging: Tube Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V Power Dissipation (Max): 125W Vgs(th) (Max) @ Id: 2.3V @ 5mA Supplier Device Package: 8-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): 6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V |
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AONV110A60 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tube Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V Power Dissipation (Max): 8.3W (Ta), 357W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V |
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AONV140A60 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tube Part Status: Active |
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AONV210A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4.1A/20A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V |
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AONV210A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 4.1A/20A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V |
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AONX36320 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AONX36324 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 21A/55A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AONX38168 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 25V 25A/62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AONX38168 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 25V 25A/62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Supplier Device Package: 8-DFN (5x6) |
на замовлення 1251 шт: термін постачання 21-31 дні (днів) |
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AONX38320 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AONY36306 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17.5A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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AONY36352 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
на замовлення 15040 шт: термін постачання 21-31 дні (днів) |
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AONY36352 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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AONY36354 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONY36354 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active |
на замовлення 7062 шт: термін постачання 21-31 дні (днів) |
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AOP605 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PDIP Part Status: Obsolete |
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AOP607 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 60V 8DIP |
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AOP609 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 60V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PDIP |
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AOP610 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PDIP |
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AOSD21307 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSD21307 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 8382 шт: термін постачання 21-31 дні (днів) |
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AOSD21311C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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AOSD21311C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 54610 шт: термін постачання 21-31 дні (днів) |
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AOSD21313C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 5.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AOSD21313C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 5.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 15184 шт: термін постачання 21-31 дні (днів) |
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AOSD26313C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 7A/5.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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AOSD32334C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 138000 шт: термін постачання 21-31 дні (днів) |
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AOSD32334C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 140040 шт: термін постачання 21-31 дні (днів) |
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AONS66612 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 95.81 грн |
AONS66612 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
на замовлення 5116 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.09 грн |
10+ | 159.16 грн |
100+ | 128.74 грн |
500+ | 107.39 грн |
1000+ | 91.96 грн |
AONS66612T |
Виробник: Alpha & Omega Semiconductor Inc.
Description: 60V N-CHANNEL ALPHASGT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Description: 60V N-CHANNEL ALPHASGT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 103.45 грн |
AONS66612T |
Виробник: Alpha & Omega Semiconductor Inc.
Description: 60V N-CHANNEL ALPHASGT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Description: 60V N-CHANNEL ALPHASGT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
на замовлення 5978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.02 грн |
10+ | 171.81 грн |
100+ | 139 грн |
500+ | 115.95 грн |
1000+ | 99.28 грн |
AONS66614 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
товар відсутній
AONS66614 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
на замовлення 651 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 114.97 грн |
10+ | 98.7 грн |
25+ | 93.63 грн |
100+ | 72.19 грн |
250+ | 67.49 грн |
500+ | 59.64 грн |
AONS66615 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 32.37 грн |
AONS66615 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.15 грн |
10+ | 65.63 грн |
25+ | 62.34 грн |
100+ | 48.06 грн |
250+ | 44.93 грн |
500+ | 39.7 грн |
1000+ | 30.83 грн |
AONS66620 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.43 грн |
10+ | 59.38 грн |
25+ | 56.39 грн |
100+ | 43.46 грн |
250+ | 40.63 грн |
500+ | 35.9 грн |
1000+ | 27.88 грн |
AONS66620 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
товар відсутній
AONS66641 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
товар відсутній
AONS66641 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 141.84 грн |
10+ | 122.93 грн |
25+ | 115.97 грн |
100+ | 92.72 грн |
250+ | 87.07 грн |
500+ | 76.18 грн |
1000+ | 62.09 грн |
AONS66811 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
товар відсутній
AONS66811 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
на замовлення 1914 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.86 грн |
10+ | 165.34 грн |
25+ | 156.03 грн |
100+ | 124.75 грн |
250+ | 117.13 грн |
500+ | 102.49 грн |
1000+ | 83.53 грн |
AONS66817 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 40 V
Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 40 V
товар відсутній
AONS66908 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 158A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 158A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товар відсутній
AONS66909 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
товар відсутній
AONS66916 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
товар відсутній
AONS66916 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 230.68 грн |
10+ | 199.92 грн |
25+ | 188.98 грн |
100+ | 153.7 грн |
250+ | 145.82 грн |
500+ | 130.84 грн |
1000+ | 108.54 грн |
AONS66917 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
на замовлення 1739 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 230.68 грн |
10+ | 199.92 грн |
25+ | 188.98 грн |
100+ | 153.7 грн |
250+ | 145.82 грн |
500+ | 130.84 грн |
1000+ | 108.54 грн |
AONS66917 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
товар відсутній
AONS66919 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.01 грн |
10+ | 91.44 грн |
25+ | 86.78 грн |
100+ | 66.9 грн |
250+ | 62.54 грн |
500+ | 55.26 грн |
1000+ | 42.91 грн |
AONS66919 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
товар відсутній
AONS66920 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 34.42 грн |
AONS66920 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 113269 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.2 грн |
10+ | 50.83 грн |
100+ | 39.55 грн |
500+ | 31.45 грн |
1000+ | 31.11 грн |
AONS66923 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 37.83 грн |
AONS66923 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 16415 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.92 грн |
10+ | 55.86 грн |
100+ | 43.46 грн |
500+ | 34.57 грн |
1000+ | 34.19 грн |
AONS66966 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 93.75 грн |
AONS66966 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
на замовлення 5658 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 192.61 грн |
10+ | 155.71 грн |
100+ | 125.96 грн |
500+ | 105.08 грн |
1000+ | 89.97 грн |
AONS67614 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
товар відсутній
AONS850A70 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V
Power Dissipation (Max): 4.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V
Power Dissipation (Max): 4.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
товар відсутній
AONT21313C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
товар відсутній
AONV070V65G1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: GAN
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
Description: GAN
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
товар відсутній
AONV110A60 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tube
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
Description: N
Packaging: Tube
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
товар відсутній
AONV140A60 |
товар відсутній
AONV210A60 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
товар відсутній
AONV210A60 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
товар відсутній
AONX36320 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товар відсутній
AONX36324 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 21A/55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 21A/55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товар відсутній
AONX38168 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A/62A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 25V 25A/62A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товар відсутній
AONX38168 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A/62A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 25V 25A/62A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 1251 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 148.56 грн |
10+ | 118.98 грн |
100+ | 94.73 грн |
500+ | 75.22 грн |
1000+ | 63.82 грн |
AONX38320 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товар відсутній
AONY36306 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 17.5A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товар відсутній
AONY36352 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
на замовлення 15040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.12 грн |
10+ | 64.56 грн |
100+ | 50.17 грн |
500+ | 39.91 грн |
1000+ | 32.51 грн |
AONY36352 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 33.87 грн |
6000+ | 31.06 грн |
9000+ | 29.62 грн |
AONY36354 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 29.68 грн |
AONY36354 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 30V 18.5A/49A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
на замовлення 7062 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 71.67 грн |
10+ | 56.5 грн |
100+ | 43.97 грн |
500+ | 34.98 грн |
1000+ | 28.49 грн |
AOP605 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PDIP
Part Status: Obsolete
товар відсутній
AOP607 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8DIP
Description: MOSFET N/P-CH 60V 8DIP
товар відсутній
AOP609 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PDIP
Description: MOSFET N/P-CH 60V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PDIP
товар відсутній
AOP610 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PDIP
Description: MOSFET N/P-CH 30V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PDIP
товар відсутній
AOSD21307 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 23.64 грн |
AOSD21307 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 8382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.96 грн |
10+ | 51.9 грн |
100+ | 35.94 грн |
500+ | 28.19 грн |
1000+ | 23.99 грн |
AOSD21311C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 15.03 грн |
AOSD21311C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 54610 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.54 грн |
10+ | 38.03 грн |
100+ | 26.31 грн |
500+ | 20.63 грн |
1000+ | 17.56 грн |
AOSD21313C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 22.53 грн |
6000+ | 20.56 грн |
9000+ | 19.04 грн |
AOSD21313C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 15184 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.72 грн |
10+ | 49.46 грн |
100+ | 34.26 грн |
500+ | 26.87 грн |
1000+ | 22.87 грн |
AOSD26313C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 7A/5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V 7A/5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
AOSD32334C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 138000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.7 грн |
6000+ | 8.95 грн |
9000+ | 8.06 грн |
30000+ | 7.45 грн |
75000+ | 7 грн |
AOSD32334C |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 140040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.83 грн |
11+ | 26.89 грн |
100+ | 16.11 грн |
500+ | 14 грн |
1000+ | 9.52 грн |