Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4268) > Сторінка 26 з 72
| Фото | Назва | Виробник | Інформація |
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AOI7S65 | Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube |
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AOI8N25 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R |
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced |
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced |
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOI9N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube |
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| AOK040A60 | Alpha & Omega Semiconductor |
High Voltage MOSFETs (500V - 1000V) |
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| AOK060V65X2 | Alpha & Omega Semiconductor | AOK060V65X2 |
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| AOK065V120X2Q | Alpha & Omega Semiconductor |
1200V SiC MOSFETs |
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| AOK095A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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AOK10B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK10N90 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube |
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AOK15B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube |
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| AOK160A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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AOK18N65L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R |
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AOK20B120D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ |
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AOK20B120E1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ кількість в упаковці: 240 шт |
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AOK20B120E2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ |
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AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ кількість в упаковці: 1 шт |
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AOK20B135D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 7-14 дні (днів) |
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AOK20B135E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ Turn-off time: 311ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.2V Collector current: 20A Turn-off switching energy: 1.26mJ Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 125W Gate charge: 58nC Pulsed collector current: 80A Type of transistor: IGBT Kind of package: tube Case: TO247 |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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AOK20B135E1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 74A Mounting: THT Gate charge: 24.6nC Kind of package: tube Turn-on time: 45ns Turn-off time: 107ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.18mJ Turn-on switching energy: 0.76mJ |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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AOK20B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 74A Mounting: THT Gate charge: 24.6nC Kind of package: tube Turn-on time: 45ns Turn-off time: 107ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.18mJ Turn-on switching energy: 0.76mJ кількість в упаковці: 1 шт |
на замовлення 187 шт: термін постачання 7-14 дні (днів) |
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AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ |
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AOK20B65M1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ кількість в упаковці: 240 шт |
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AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ |
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AOK20B65M2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ кількість в упаковці: 1 шт |
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AOK20N60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R |
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AOK20S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
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AOK20S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
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AOK22N50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R |
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AOK27S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R |
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AOK29S50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-off time: 340ns Collector-emitter saturation voltage: 1.77V Turn-off switching energy: 1.28mJ |
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AOK30B120D2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-off time: 340ns Collector-emitter saturation voltage: 1.77V Turn-off switching energy: 1.28mJ кількість в упаковці: 1 шт |
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AOK30B135W1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-off time: 362ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.47mJ |
на замовлення 229 шт: термін постачання 21-30 дні (днів) |
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-off time: 362ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.47mJ кількість в упаковці: 1 шт |
на замовлення 229 шт: термін постачання 7-14 дні (днів) |
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| AOK30B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 66ns Turn-off time: 89ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.24mJ Turn-on switching energy: 1.1mJ |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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| AOK30B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 66ns Turn-off time: 89ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.24mJ Turn-on switching energy: 1.1mJ кількість в упаковці: 1 шт |
на замовлення 191 шт: термін постачання 7-14 дні (днів) |
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AOK30B65M2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 |
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AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
товар відсутній |
| AOI7S65 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOI8N25 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
товар відсутній
| AOI8N25 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
товар відсутній
| AOI8N25 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AOI950A70 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
товар відсутній
| AOI950A70 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AOI9N50 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOK10B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK10N90 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK15B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK18N65L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK20B120D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B120D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 387.09 грн |
| AOK20B120D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.45 грн |
| 3+ | 301 грн |
| 5+ | 231.19 грн |
| 12+ | 219.12 грн |
| 240+ | 214.8 грн |
| AOK20B120E1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
товар відсутній
| AOK20B120E1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B120E1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
кількість в упаковці: 240 шт
товар відсутній
| AOK20B120E2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B120E2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
товар відсутній
| AOK20B120E2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK20B135D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B135D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.61 грн |
| 3+ | 190.5 грн |
| 6+ | 140.18 грн |
| 17+ | 132.99 грн |
| AOK20B135D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273.13 грн |
| 3+ | 237.4 грн |
| 6+ | 168.22 грн |
| 17+ | 159.59 грн |
| AOK20B135E1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.87 грн |
| AOK20B135E1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.5 грн |
| 8+ | 113.58 грн |
| 21+ | 107.11 грн |
| AOK20B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
кількість в упаковці: 1 шт
на замовлення 187 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.17 грн |
| 3+ | 180.06 грн |
| 8+ | 136.3 грн |
| 21+ | 128.54 грн |
| AOK20B65M1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
товар відсутній
| AOK20B65M1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B65M1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
кількість в упаковці: 240 шт
товар відсутній
| AOK20B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
товар відсутній
| AOK20B65M2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK20N60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK20S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK20S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK22N50L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK27S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK29S50L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B120D2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
товар відсутній
| AOK30B120D2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B120D2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK30B135W1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B135W1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
на замовлення 229 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.42 грн |
| 3+ | 220.7 грн |
| 5+ | 181.88 грн |
| 13+ | 171.81 грн |
| AOK30B135W1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
кількість в упаковці: 1 шт
на замовлення 229 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.3 грн |
| 3+ | 275.02 грн |
| 5+ | 218.25 грн |
| 13+ | 206.18 грн |
| AOK30B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.4 грн |
| 9+ | 99.93 грн |
| 24+ | 94.17 грн |
| AOK30B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
кількість в упаковці: 1 шт
на замовлення 191 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.88 грн |
| 3+ | 161.25 грн |
| 9+ | 119.91 грн |
| 24+ | 113.01 грн |
| AOK30B65M2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
товар відсутній
| AOK30B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній