Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4268) > Сторінка 46 з 72
| Фото | Назва | Виробник | Інформація |
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AONS67614 | Alpha & Omega Semiconductor |
 60V N-Channel MOSFET |
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| AONS850A70 | Alpha & Omega Semiconductor |
High Voltage MOSFETs (500V - 1000V) |
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| AONT21313C | Alpha & Omega Semiconductor |
P-Channel MOSFET |
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| AONV110A60 | Alpha & Omega Semiconductor |
High Voltage MOSFETs (500V - 1000V) |
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| AONV125A60 | Alpha & Omega Semiconductor |
High Voltage MOSFETs |
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| AONV180A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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| AONV210A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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| AONV420A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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| AONX38168 | Alpha & Omega Semiconductor |
25V Dual Asymmetric N-Channel MOSFET |
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| AONX38168 | Alpha & Omega Semiconductor |
25V Dual Asymmetric N-Channel MOSFET |
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| AONX38320 | Alpha & Omega Semiconductor |
AONX38320 |
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| AONY36302 | Alpha & Omega Semiconductor |
Dual Asymmetric N Channel MOSFET |
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| AONY36304 | Alpha & Omega Semiconductor |
Dual Asymmetric N Channel MOSFET |
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AONY36352 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/72.5A Power dissipation: 8.5/18W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric |
на замовлення 1525 шт: термін постачання 21-30 дні (днів) |
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| AONY36352 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R |
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| AONY36352 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R |
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AONY36352 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/72.5A Power dissipation: 8.5/18W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric кількість в упаковці: 1 шт |
на замовлення 1525 шт: термін постачання 7-14 дні (днів) |
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AONY36354 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R |
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| AONY36354 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R |
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AONY36354 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54.5A Power dissipation: 8.5/12.5W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2.6mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric |
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AONY36354 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54.5A Power dissipation: 8.5/12.5W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.3/2.6mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: asymmetric кількість в упаковці: 3000 шт |
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AONY36356 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R |
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AOP610 | Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 7.7A/6.2A 8-Pin PDIP |
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| AOS296A001 | Alpha & Omega Semiconductor | AOD296A_001 |
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AOSD21307 | Alpha & Omega Semiconductor |
30V Dual P-Channel MOSFET |
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AOSD21311C | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R |
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AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| AOSD26313C | Alpha & Omega Semiconductor |
30V Complementary MOSFET |
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AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOSD32334C | Alpha & Omega Semiconductor |
30V Dual N-Channel MOSFET |
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AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1357 шт: термін постачання 21-30 дні (днів) |
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AOSD62666E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R |
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AOSD62666E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R |
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AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 1357 шт: термін постачання 7-14 дні (днів) |
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| AOSN21319C | Alpha & Omega Semiconductor |
P-Channel MOSFET |
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AOSP21307 | Alpha & Omega Semiconductor |
P-Channel MOSFET |
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AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar |
на замовлення 1109 шт: термін постачання 21-30 дні (днів) |
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AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 1109 шт: термін постачання 7-14 дні (днів) |
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AOSP21307 | Alpha & Omega Semiconductor |
P-Channel MOSFET |
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| AOSP21313C | Alpha & Omega Semiconductor |
P-Channel MOSFET |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
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AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±25V |
на замовлення 504 шт: термін постачання 21-30 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
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AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±25V кількість в упаковці: 1 шт |
на замовлення 504 шт: термін постачання 7-14 дні (днів) |
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AOSP21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8 Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 8.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar |
на замовлення 1113 шт: термін постачання 21-30 дні (днів) |
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AOSP21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8 Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 8.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 1113 шт: термін постачання 7-14 дні (днів) |
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AOSP21357 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R |
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AOSP21357 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R |
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AOSP32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
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| AOSP32314 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
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AOSP32314 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
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AOSP32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
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AOSP32320C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhanced Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Drain current: 8.5A Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ |
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AOSP32320C | Alpha & Omega Semiconductor |
30V N-Channel MOSFET |
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AOSP32320C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhanced Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Drain current: 8.5A Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ кількість в упаковці: 1 шт |
товар відсутній |
| AONY36352 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
на замовлення 1525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.16 грн |
| 8+ | 48.88 грн |
| 10+ | 43.35 грн |
| 21+ | 40.26 грн |
| 57+ | 38.1 грн |
| 500+ | 36.88 грн |
| AONY36352 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
товар відсутній
| AONY36352 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
товар відсутній
| AONY36352 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
на замовлення 1525 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.39 грн |
| 5+ | 60.92 грн |
| 10+ | 52.02 грн |
| 21+ | 48.31 грн |
| 57+ | 45.72 грн |
| 500+ | 44.25 грн |
| AONY36354 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
товар відсутній
| AONY36354 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
Trans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
товар відсутній
| AONY36354 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
товар відсутній
| AONY36354 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
кількість в упаковці: 3000 шт
товар відсутній
| AONY36356 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
Trans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
товар відсутній
| AOP610 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N/P-CH 30V 7.7A/6.2A 8-Pin PDIP
Trans MOSFET N/P-CH 30V 7.7A/6.2A 8-Pin PDIP
товар відсутній
| AOSD21311C |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
товар відсутній
| AOSD26313C |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| AOSD26313C |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| AOSD62666E |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1357 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.19 грн |
| 14+ | 27.32 грн |
| 25+ | 23.72 грн |
| 41+ | 20.13 грн |
| 113+ | 19.41 грн |
| AOSD62666E |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
товар відсутній
| AOSD62666E |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
товар відсутній
| AOSD62666E |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1357 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.03 грн |
| 8+ | 34.04 грн |
| 25+ | 28.47 грн |
| 41+ | 24.15 грн |
| 113+ | 23.29 грн |
| AOSP21307 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
на замовлення 1109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.1 грн |
| 17+ | 21.57 грн |
| 19+ | 19.12 грн |
| 50+ | 16.61 грн |
| 138+ | 15.67 грн |
| AOSP21307 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 1109 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.32 грн |
| 10+ | 26.88 грн |
| 12+ | 22.95 грн |
| 50+ | 19.93 грн |
| 138+ | 18.81 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.77 грн |
| 6000+ | 11.17 грн |
| 9000+ | 10.83 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.34 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.63 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.08 грн |
| 6000+ | 11.36 грн |
| 9000+ | 10.45 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.13 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
товар відсутній
| AOSP21321 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
на замовлення 504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 17.57 грн |
| 29+ | 12.51 грн |
| 89+ | 9.56 грн |
| 243+ | 9.06 грн |
| AOSP21321 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
товар відсутній
| AOSP21321 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
кількість в упаковці: 1 шт
на замовлення 504 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.09 грн |
| 25+ | 15.59 грн |
| 89+ | 11.47 грн |
| 243+ | 10.87 грн |
| AOSP21357 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
на замовлення 1113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.1 грн |
| 18+ | 20.13 грн |
| 21+ | 17.68 грн |
| 55+ | 15.31 грн |
| 149+ | 14.52 грн |
| AOSP21357 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 1113 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.32 грн |
| 11+ | 25.08 грн |
| 13+ | 21.22 грн |
| 55+ | 18.37 грн |
| 149+ | 17.43 грн |
| AOSP21357 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
товар відсутній
| AOSP21357 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
товар відсутній
| AOSP32314 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
товар відсутній
| AOSP32314 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
товар відсутній
| AOSP32314 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
товар відсутній
| AOSP32314 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
товар відсутній
| AOSP32320C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
товар відсутній
| AOSP32320C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
кількість в упаковці: 1 шт
товар відсутній