Продукція > GIGADEVICE SEMICONDUCTOR (HK) LIMITED > Всі товари виробника GIGADEVICE SEMICONDUCTOR (HK) LIMITED (611) > Сторінка 10 з 11
| Фото | Назва | Виробник | Інформація |
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| GD55B01GEFIRR | GigaDevice Semiconductor (HK) Limited |
Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 128M x 8 |
на замовлення 909 шт: термін постачання 21-31 дні (днів) |
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| GD55B01GEFIRR | GigaDevice Semiconductor (HK) Limited |
Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 128M x 8 |
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| GD55LX01GEB2RY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 |
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| GD55LX01GEBIRY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 |
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| GD55LX01GEFIRR | GigaDevice Semiconductor (HK) Limited |
Description: 1GBIT, 1.8V, SOP16 300MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 |
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| GD55LX01GEFIRR | GigaDevice Semiconductor (HK) Limited |
Description: 1GBIT, 1.8V, SOP16 300MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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| GD55T01GEYAGR | GigaDevice Semiconductor (HK) Limited |
Description: NOR FLASH Packaging: Tape & Reel (TR) |
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GD5F1GQ4RF9IGR | GigaDevice Semiconductor (HK) Limited |
 Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGAPackaging: Tape & Reel (TR) Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4RF9IGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA Packaging: Tray Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4UFYIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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GD5F1GQ4UFYIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
на замовлення 1105 шт: термін постачання 21-31 дні (днів) |
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GD5F1GQ4UFYIGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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| GD5F2GM7REWIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 512M x 4 |
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| GD5F2GM7REYIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 512M x 4 |
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| GD5F2GM7UEWIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 8 |
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| GD5F2GM7UEYIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 8 |
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GD5F2GQ4RF9IGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA Packaging: Tape & Reel (TR) Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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GD5F2GQ4RF9IGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA Packaging: Tray Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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GD5F2GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 2GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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GD5F2GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 2GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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GD5F2GQ4UF9IGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA Packaging: Tape & Reel (TR) Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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GD5F2GQ4UFYIGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 2GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
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| GD5F2GQ5REY2GY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 11 ns Memory Organization: 512M x 4 |
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| GD5F2GQ5REYIGR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 11 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5REYIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 11 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5REYIHR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 11 ns Memory Organization: 512M x 4 |
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| GD5F2GQ5REYIHY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 11 ns Memory Organization: 512M x 4 |
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| GD5F2GQ5REYJGR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 11 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5RFBIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
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| GD5F2GQ5RFYIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
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| GD5F2GQ5RFZIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
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| GD5F2GQ5UEBIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5UEY2GY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5UEYIGR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5UEYIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5UEYIHR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9 ns Memory Organization: 512M x 4 |
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| GD5F2GQ5UEYIHY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9 ns Memory Organization: 512M x 4 |
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| GD5F2GQ5UEYJGR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5UEZIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 |
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| GD5F2GQ5UFYIGR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) |
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| GD5F4GM8UEYIGR | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 1G x 4 |
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| GD5F4GM8UEYIGY | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 1G x 4 |
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GD5F4GQ4UCYIGY | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 4GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 512M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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| GD5F4GQ6RFYIGR | GigaDevice Semiconductor (HK) Limited | Description: SPI NAND FLASH 4GB WSON8 |
товар відсутній |
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| GD5F4GQ6RFYIGR | GigaDevice Semiconductor (HK) Limited | Description: SPI NAND FLASH 4GB WSON8 |
товар відсутній |
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| GD5F4GQ6RFYIGR | GigaDevice Semiconductor (HK) Limited | Description: SPI NAND FLASH 4GB WSON8 |
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| GD9FS1G8F2ALGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 63-FBGA (9x11) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 30 ns Memory Organization: 128M x 8 |
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GD9FS1G8F2AMGI | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 1GBIT 48TSOP I Packaging: Tray Package / Case: 48-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 48-TSOP I Part Status: Active Memory Organization: 128M x 8 |
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| GD9FS1G8F3ALGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
товар відсутній |
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| GD9FS2G6F2AMGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 25ns Memory Interface: ONFI Access Time: 20 ns Memory Organization: 128M x 16 |
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| GD9FS2G8F2ALGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 63-FBGA (9x11) Write Cycle Time - Word, Page: 25ns Memory Interface: ONFI Access Time: 20 ns Memory Organization: 256M x 8 |
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| GD9FS2G8F2AMGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 25ns Memory Interface: ONFI Access Time: 20 ns Memory Organization: 256M x 8 |
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| GD9FS2G8F3ALGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 63-FBGA (9x11) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| GD9FS2G8F3AMGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 |
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| GD9FS4G8F2ALGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
товар відсутній |
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| GD9FS4G8F2ALGJ | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
товар відсутній |
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| GD9FS4G8F2AMGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 25ns Memory Interface: ONFI Access Time: 22 ns Memory Organization: 512M x 8 |
товар відсутній |
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| GD9FS4G8F3ALGI | GigaDevice Semiconductor (HK) Limited |
Description: LINEAR IC Packaging: Tray |
товар відсутній |
| GD55B01GEFIRR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
на замовлення 909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 859.26 грн |
| 10+ | 766.19 грн |
| 25+ | 748.82 грн |
| 50+ | 698.96 грн |
| 100+ | 615.3 грн |
| 250+ | 584.77 грн |
| 500+ | 569.42 грн |
| GD55B01GEFIRR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
товар відсутній
| GD55LX01GEB2RY |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
товар відсутній
| GD55LX01GEBIRY |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
товар відсутній
| GD55LX01GEFIRR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 1GBIT, 1.8V, SOP16 300MIL, INDUS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
Description: 1GBIT, 1.8V, SOP16 300MIL, INDUS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
товар відсутній
| GD55LX01GEFIRR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 1GBIT, 1.8V, SOP16 300MIL, INDUS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
Description: 1GBIT, 1.8V, SOP16 300MIL, INDUS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
на замовлення 991 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1222.08 грн |
| 10+ | 1089.62 грн |
| 25+ | 1074.82 грн |
| 50+ | 996.01 грн |
| 100+ | 872.86 грн |
| 250+ | 835.44 грн |
| 500+ | 816.4 грн |
| GD55T01GEYAGR |
товар відсутній
| GD5F1GQ4RF9IGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F1GQ4RF9IGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tray
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tray
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F1GQ4UEYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F1GQ4UEYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F1GQ4UFYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F1GQ4UFYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 1105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 297.12 грн |
| 10+ | 259.45 грн |
| 25+ | 253.8 грн |
| 50+ | 236.87 грн |
| 100+ | 212.38 грн |
| 250+ | 211.61 грн |
| 500+ | 200.54 грн |
| 1000+ | 190.65 грн |
| GD5F1GQ4UFYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GM7REWIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GM7REYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GM7UEWIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GM7UEYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ4RF9IGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GQ4RF9IGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
Packaging: Tray
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
Packaging: Tray
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GQ4UEYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GQ4UEYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GQ4UF9IGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GQ4UFYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F2GQ5REY2GY |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 11 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 11 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GQ5REYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 11 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 11 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5REYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 11 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 11 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5REYIHR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 11 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 11 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GQ5REYIHY |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 11 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 11 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GQ5REYJGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 11 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 11 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5RFBIGY |
товар відсутній
| GD5F2GQ5RFYIGY |
товар відсутній
| GD5F2GQ5RFZIGY |
товар відсутній
| GD5F2GQ5UEBIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5UEY2GY |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5UEYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5UEYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5UEYIHR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GQ5UEYIHY |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 9 ns
Memory Organization: 512M x 4
товар відсутній
| GD5F2GQ5UEYJGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5UEZIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O
Access Time: 9 ns
Memory Organization: 256M x 8
товар відсутній
| GD5F2GQ5UFYIGR |
товар відсутній
| GD5F4GM8UEYIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
товар відсутній
| GD5F4GM8UEYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
Description: LINEAR IC
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
товар відсутній
| GD5F4GQ4UCYIGY |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD5F4GQ6RFYIGR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: SPI NAND FLASH 4GB WSON8
Description: SPI NAND FLASH 4GB WSON8
товар відсутній
| GD5F4GQ6RFYIGR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: SPI NAND FLASH 4GB WSON8
Description: SPI NAND FLASH 4GB WSON8
товар відсутній
| GD5F4GQ6RFYIGR |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: SPI NAND FLASH 4GB WSON8
Description: SPI NAND FLASH 4GB WSON8
товар відсутній
| GD9FS1G8F2ALGI |
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 128M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 128M x 8
товар відсутній
| GD9FS1G8F2AMGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Organization: 128M x 8
Description: IC FLASH 1GBIT 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Organization: 128M x 8
товар відсутній
| GD9FS1G8F3ALGI |
товар відсутній
| GD9FS2G6F2AMGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 128M x 16
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 128M x 16
товар відсутній
| GD9FS2G8F2ALGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
товар відсутній
| GD9FS2G8F2AMGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
товар відсутній
| GD9FS2G8F3ALGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
товар відсутній
| GD9FS2G8F3AMGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
товар відсутній
| GD9FS4G8F2ALGI |
|
товар відсутній
| GD9FS4G8F2ALGJ |
|
товар відсутній
| GD9FS4G8F2AMGI |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
Description: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
товар відсутній
| GD9FS4G8F3ALGI |
|
товар відсутній