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G3S06502A G3S06502A Global Power Technology-GPT 155702jk.pdf Description: SIC SCHOTTKY DIODE 650V 2A 2-PIN
товар відсутній
G3S06502A G3S06502A Global Power Technology-GPT 155702jk.pdf Description: SIC SCHOTTKY DIODE 650V 2A 2-PIN
товар відсутній
G3S06503A G3S06503A Global Power Technology-GPT 160023l9.pdf Description: DIODE SIC 650V 11.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
2+203.8 грн
10+ 176.63 грн
100+ 141.94 грн
Мінімальне замовлення: 2
G3S06504A G3S06504A Global Power Technology-GPT 160513l6.pdf Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06504A G3S06504A Global Power Technology-GPT 160513l6.pdf Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06504B G3S06504B Global Power Technology-GPT 160605mx.pdf Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
товар відсутній
G3S06504B G3S06504B Global Power Technology-GPT 160605mx.pdf Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
товар відсутній
G3S06504C G3S06504C Global Power Technology-GPT 1606432o.pdf Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06504C G3S06504C Global Power Technology-GPT 1606432o.pdf Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06506A G3S06506A Global Power Technology-GPT 161338ty.pdf Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN
товар відсутній
G3S06506A G3S06506A Global Power Technology-GPT 161338ty.pdf Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN
товар відсутній
G3S06506B G3S06506B Global Power Technology-GPT 161413xq.pdf Description: SIC SCHOTTKY DIODE 650V 6A 3-PIN
товар відсутній
G3S06506B G3S06506B Global Power Technology-GPT 161413xq.pdf Description: SIC SCHOTTKY DIODE 650V 6A 3-PIN
товар відсутній
G3S06508B G3S06508B Global Power Technology-GPT 161817mf.pdf Description: SIC SCHOTTKY DIODE 650V 8A 3-PIN
товар відсутній
G3S06508B G3S06508B Global Power Technology-GPT 161817mf.pdf Description: SIC SCHOTTKY DIODE 650V 8A 3-PIN
товар відсутній
G3S06508J G3S06508J Global Power Technology-GPT 162157dp.pdf Description: DIODE SIL CARB 650V 23A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06508J G3S06508J Global Power Technology-GPT 162157dp.pdf Description: DIODE SIL CARB 650V 23A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06512B G3S06512B Global Power Technology-GPT 163325s2.pdf Description: DIODE ARR SIC 650V 27A TO247AB
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06512B G3S06512B Global Power Technology-GPT 163325s2.pdf Description: DIODE ARR SIC 650V 27A TO247AB
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06520A G3S06520A Global Power Technology-GPT 163550fv.pdf Description: DIODE SIC 650V 56.5A TO220AC
Packaging: Cut Tape (CT)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
Current - Average Rectified (Io): 56.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06520A G3S06520A Global Power Technology-GPT 163550fv.pdf Description: DIODE SIC 650V 56.5A TO220AC
Packaging: Tape & Box (TB)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
Current - Average Rectified (Io): 56.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06540B G3S06540B Global Power Technology-GPT 16432574.pdf Description: SIC SCHOTTKY DIODE 650V 40A 3-PI
товар відсутній
G3S06540B G3S06540B Global Power Technology-GPT 16432574.pdf Description: SIC SCHOTTKY DIODE 650V 40A 3-PI
товар відсутній
G3S12002A G3S12002A Global Power Technology-GPT 151706zn.pdf Description: DIODE SIL CARB 1.2KV 7A TO220AC
Packaging: Cut Tape (CT)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 136pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12002A G3S12002A Global Power Technology-GPT 151706zn.pdf Description: DIODE SIL CARB 1.2KV 7A TO220AC
Packaging: Tape & Box (TB)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 136pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12002C G3S12002C Global Power Technology-GPT 151826mc.pdf Description: SIC SCHOTTKY DIODE 1200V 2A 2-PI
товар відсутній
G3S12002C G3S12002C Global Power Technology-GPT 151826mc.pdf Description: SIC SCHOTTKY DIODE 1200V 2A 2-PI
товар відсутній
G3S12003C G3S12003C Global Power Technology-GPT 153135wx.pdf Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI
товар відсутній
G3S12003C G3S12003C Global Power Technology-GPT 153135wx.pdf Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI
товар відсутній
G3S12005A G3S12005A Global Power Technology-GPT 153407s1.pdf Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI
товар відсутній
G3S12005A G3S12005A Global Power Technology-GPT 153407s1.pdf Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI
товар відсутній
G3S12006B G3S12006B Global Power Technology-GPT 1538482j.pdf Description: SIC SCHOTTKY DIODE 1200V 6A 3-PI
товар відсутній
G3S12006B G3S12006B Global Power Technology-GPT 1538482j.pdf Description: SIC SCHOTTKY DIODE 1200V 6A 3-PI
товар відсутній
G3S12010B G3S12010B Global Power Technology-GPT 1540217c.pdf Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12010B G3S12010B Global Power Technology-GPT 1540217c.pdf Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12010BM G3S12010BM Global Power Technology-GPT 130802no.pdf Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12010BM G3S12010BM Global Power Technology-GPT 130802no.pdf Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12015P G3S12015P Global Power Technology-GPT 1549315u.pdf Description: DIODE SIL CARB 1.2KV 42A TO247AC
Packaging: Cut Tape (CT)
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12015P G3S12015P Global Power Technology-GPT 1549315u.pdf Description: DIODE SIL CARB 1.2KV 42A TO247AC
Packaging: Tape & Box (TB)
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12040B G3S12040B Global Power Technology-GPT 1554239h.pdf Description: SIC SCHOTTKY DIODE 1200V 40A 3-P
товар відсутній
G3S12040B G3S12040B Global Power Technology-GPT 1554239h.pdf Description: SIC SCHOTTKY DIODE 1200V 40A 3-P
товар відсутній
G3S17020B G3S17020B Global Power Technology-GPT 15154327.pdf Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товар відсутній
G3S17020B G3S17020B Global Power Technology-GPT 15154327.pdf Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товар відсутній
G4S06508AT G4S06508AT Global Power Technology-GPT 150100un.pdf Description: DIODE SIC 650V 24.5A TO220AC
товар відсутній
G4S06508AT G4S06508AT Global Power Technology-GPT 150100un.pdf Description: DIODE SIC 650V 24.5A TO220AC
товар відсутній
G4S06508CT G4S06508CT Global Power Technology-GPT 1503599b.pdf Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Tape & Box (TB)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508CT G4S06508CT Global Power Technology-GPT 1503599b.pdf Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508DT G4S06508DT Global Power Technology-GPT 150427ly.pdf Description: DIODE SIL CARBIDE 650V 24A TO263
товар відсутній
G4S06508DT G4S06508DT Global Power Technology-GPT 150427ly.pdf Description: DIODE SIL CARBIDE 650V 24A TO263
товар відсутній
G4S06508HT G4S06508HT Global Power Technology-GPT 150458h4.pdf Description: DIODE SIL CARB 650V 18.5A TO220F
товар відсутній
G4S06508HT G4S06508HT Global Power Technology-GPT 150458h4.pdf Description: DIODE SIL CARB 650V 18.5A TO220F
товар відсутній
G4S06508JT G4S06508JT Global Power Technology-GPT 150526km.pdf Description: DIODE SIC 650V 23.5A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508JT G4S06508JT Global Power Technology-GPT 150526km.pdf Description: DIODE SIC 650V 23.5A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508QT G4S06508QT Global Power Technology-GPT 085609mo.pdf Description: DIODE SIL CARBIDE 650V 34A 4DFN
товар відсутній
G4S06508QT G4S06508QT Global Power Technology-GPT 085609mo.pdf Description: DIODE SIL CARBIDE 650V 34A 4DFN
товар відсутній
G4S06510JT G4S06510JT Global Power Technology-GPT 151054rr.pdf Description: DIODE SIC 650V 31.2A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06510JT G4S06510JT Global Power Technology-GPT 151054rr.pdf Description: DIODE SIC 650V 31.2A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06510QT G4S06510QT Global Power Technology-GPT 085704vw.pdf Description: SIC SCHOTTKY DIODE 650V 10A DFN8
товар відсутній
G4S06510QT G4S06510QT Global Power Technology-GPT 085704vw.pdf Description: SIC SCHOTTKY DIODE 650V 10A DFN8
товар відсутній
G4S06515HT G4S06515HT Global Power Technology-GPT 151944kx.pdf Description: DIODE SIL CARB 650V 23.8A TO220F
товар відсутній
G3S06502A 155702jk.pdf
G3S06502A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 2A 2-PIN
товар відсутній
G3S06502A 155702jk.pdf
G3S06502A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 2A 2-PIN
товар відсутній
G3S06503A 160023l9.pdf
G3S06503A
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 11.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+203.8 грн
10+ 176.63 грн
100+ 141.94 грн
Мінімальне замовлення: 2
G3S06504A 160513l6.pdf
G3S06504A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06504A 160513l6.pdf
G3S06504A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06504B 160605mx.pdf
G3S06504B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
товар відсутній
G3S06504B 160605mx.pdf
G3S06504B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
товар відсутній
G3S06504C 1606432o.pdf
G3S06504C
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06504C 1606432o.pdf
G3S06504C
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 4A 2-PIN
товар відсутній
G3S06506A 161338ty.pdf
G3S06506A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN
товар відсутній
G3S06506A 161338ty.pdf
G3S06506A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 6A 2-PIN
товар відсутній
G3S06506B 161413xq.pdf
G3S06506B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 6A 3-PIN
товар відсутній
G3S06506B 161413xq.pdf
G3S06506B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 6A 3-PIN
товар відсутній
G3S06508B 161817mf.pdf
G3S06508B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 8A 3-PIN
товар відсутній
G3S06508B 161817mf.pdf
G3S06508B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 8A 3-PIN
товар відсутній
G3S06508J 162157dp.pdf
G3S06508J
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 650V 23A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06508J 162157dp.pdf
G3S06508J
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 650V 23A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06512B 163325s2.pdf
G3S06512B
Виробник: Global Power Technology-GPT
Description: DIODE ARR SIC 650V 27A TO247AB
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06512B 163325s2.pdf
G3S06512B
Виробник: Global Power Technology-GPT
Description: DIODE ARR SIC 650V 27A TO247AB
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06520A 163550fv.pdf
G3S06520A
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 56.5A TO220AC
Packaging: Cut Tape (CT)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
Current - Average Rectified (Io): 56.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06520A 163550fv.pdf
G3S06520A
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 56.5A TO220AC
Packaging: Tape & Box (TB)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
Current - Average Rectified (Io): 56.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G3S06540B 16432574.pdf
G3S06540B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 40A 3-PI
товар відсутній
G3S06540B 16432574.pdf
G3S06540B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 40A 3-PI
товар відсутній
G3S12002A 151706zn.pdf
G3S12002A
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 7A TO220AC
Packaging: Cut Tape (CT)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 136pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12002A 151706zn.pdf
G3S12002A
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 7A TO220AC
Packaging: Tape & Box (TB)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 136pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12002C 151826mc.pdf
G3S12002C
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 2A 2-PI
товар відсутній
G3S12002C 151826mc.pdf
G3S12002C
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 2A 2-PI
товар відсутній
G3S12003C 153135wx.pdf
G3S12003C
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI
товар відсутній
G3S12003C 153135wx.pdf
G3S12003C
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 3A 2-PI
товар відсутній
G3S12005A 153407s1.pdf
G3S12005A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI
товар відсутній
G3S12005A 153407s1.pdf
G3S12005A
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 5A 2-PI
товар відсутній
G3S12006B 1538482j.pdf
G3S12006B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 6A 3-PI
товар відсутній
G3S12006B 1538482j.pdf
G3S12006B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 6A 3-PI
товар відсутній
G3S12010B 1540217c.pdf
G3S12010B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12010B 1540217c.pdf
G3S12010B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12010BM 130802no.pdf
G3S12010BM
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12010BM 130802no.pdf
G3S12010BM
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
товар відсутній
G3S12015P 1549315u.pdf
G3S12015P
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 42A TO247AC
Packaging: Cut Tape (CT)
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12015P 1549315u.pdf
G3S12015P
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 42A TO247AC
Packaging: Tape & Box (TB)
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
G3S12040B 1554239h.pdf
G3S12040B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 40A 3-P
товар відсутній
G3S12040B 1554239h.pdf
G3S12040B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 40A 3-P
товар відсутній
G3S17020B 15154327.pdf
G3S17020B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товар відсутній
G3S17020B 15154327.pdf
G3S17020B
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товар відсутній
G4S06508AT 150100un.pdf
G4S06508AT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 24.5A TO220AC
товар відсутній
G4S06508AT 150100un.pdf
G4S06508AT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 24.5A TO220AC
товар відсутній
G4S06508CT 1503599b.pdf
G4S06508CT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Tape & Box (TB)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508CT 1503599b.pdf
G4S06508CT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508DT 150427ly.pdf
G4S06508DT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARBIDE 650V 24A TO263
товар відсутній
G4S06508DT 150427ly.pdf
G4S06508DT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARBIDE 650V 24A TO263
товар відсутній
G4S06508HT 150458h4.pdf
G4S06508HT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 650V 18.5A TO220F
товар відсутній
G4S06508HT 150458h4.pdf
G4S06508HT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 650V 18.5A TO220F
товар відсутній
G4S06508JT 150526km.pdf
G4S06508JT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 23.5A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508JT 150526km.pdf
G4S06508JT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 23.5A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508QT 085609mo.pdf
G4S06508QT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARBIDE 650V 34A 4DFN
товар відсутній
G4S06508QT 085609mo.pdf
G4S06508QT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARBIDE 650V 34A 4DFN
товар відсутній
G4S06510JT 151054rr.pdf
G4S06510JT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 31.2A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06510JT 151054rr.pdf
G4S06510JT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 31.2A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06510QT 085704vw.pdf
G4S06510QT
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 10A DFN8
товар відсутній
G4S06510QT 085704vw.pdf
G4S06510QT
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 650V 10A DFN8
товар відсутній
G4S06515HT 151944kx.pdf
G4S06515HT
Виробник: Global Power Technology-GPT
Description: DIODE SIL CARB 650V 23.8A TO220F
товар відсутній
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