| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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150-101N09A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 9A Configuration: N-Channel Power - Output: 200W Technology: MOSFET Supplier Device Package: DE150 Voltage - Rated: 100 V |
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150-102N02A-00 | IXYS-RF |
 Description: RF MOSFET N-CHANNEL DE150 |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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150-201N09A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 9A Configuration: N-Channel Power - Output: 200W Technology: MOSFET Supplier Device Package: DE150 Voltage - Rated: 200 V |
товар відсутній |
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150-501N04A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE150 |
товар відсутній |
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275-101N30A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE275 |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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275-102N06A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE275 |
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275-201N25A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE275 |
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275-501N16A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE275 |
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275X2-102N06A-00 | IXYS-RF |
Description: RF MOSFET 2 N-CHANNEL DE275 |
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275X2-501N16A-00 | IXYS-RF |
Description: RF MOSFET 2 N-CHANNEL DE275 |
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375-102N12A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE375 |
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375-102N15A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE375 |
товар відсутній |
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375-501N21A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE375 |
товар відсутній |
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475-102N20A-00 | IXYS-RF |
Description: RF MOSFET DE475 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 20A Configuration: N-Channel Power - Output: 1800W Technology: MOSFET (Metal Oxide) Supplier Device Package: DE475 Voltage - Rated: 1000 V |
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475-102N21A-00 | IXYS-RF | Description: RF MOSFET N-CHANNEL DE475 |
товар відсутній |
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475-501N44A-00 | IXYS-RF |
Description: RF MOSFET DE475 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 48A Configuration: N-Channel Power - Output: 1800W Technology: MOSFET (Metal Oxide) Supplier Device Package: DE475 Voltage - Rated: 500 V |
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DE150-102N02A | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 2A Configuration: N-Channel Power - Output: 200W Technology: MOSFET Supplier Device Package: DE150 Voltage - Rated: 1000 V |
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DE150-501N04A | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE150 |
товар відсутній |
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DE275-102N06A | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE275 |
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DE375-102N12A | IXYS-RF |
Description: RF MOSFET N-CHANNEL DE375 |
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DE375-501N21A | IXYS-RF |
Description: RF MOSFET DE375 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 25A Frequency: 50MHz Configuration: N-Channel Power - Output: 940W Technology: MOSFET (Metal Oxide) Supplier Device Package: DE375 Voltage - Rated: 500 V |
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DE475-102N21A | IXYS-RF |
Description: RF MOSFET DE475 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 24A Configuration: N-Channel Power - Output: 1800W Technology: MOSFET (Metal Oxide) Supplier Device Package: DE475 Voltage - Rated: 1000 V |
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DVRFD615X2 | IXYS-RF |
Description: IXRFD615X2 DEV BOARD Packaging: Bulk For Use With/Related Products: IXRFD615X2 Type: MOSFET Driver Supplied Contents: Board(s) |
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DVRFD630-150/275 | IXYS-RF |
Description: IXRFD630 DE-150/DE-275 DEV BOARD Packaging: Bulk For Use With/Related Products: IXRFD630 Type: MOSFET Driver Supplied Contents: Board(s) |
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DVRFD630-375/475 | IXYS-RF |
Description: IXRFD630 DE-375/DE-475 DEV BOARD Packaging: Bulk For Use With/Related Products: IXRFD630 Type: MOSFET Driver Supplied Contents: Board(s) |
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DVRFD631-150/275 | IXYS-RF | Description: IXRFD631 DE-150/DE-275 DEV BOARD |
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DVRFD631-375/475 | IXYS-RF |
Description: IXRFD631 DE-375/DE-475 DEV BOARD Packaging: Bulk For Use With/Related Products: IXRFD631 Type: MOSFET Driver Supplied Contents: Board(s) |
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DVRFM631DF12N100 | IXYS-RF |
Description: IXZ631DF12N100 DEV BOARD Packaging: Bulk For Use With/Related Products: IXZ631DF12N100 Type: MOSFET Driver Supplied Contents: Board(s) Part Status: Obsolete |
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DVRFM631DF18N50 | IXYS-RF |
Description: IXZ631DF18N50 DEV BOARD Packaging: Bulk For Use With/Related Products: IXZ631DF18N50 Type: MOSFET Driver Supplied Contents: Board(s) Part Status: Obsolete |
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IXFK44N50F | IXYS-RF |
Description: MOSFET N-CH 500V 44A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-264AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
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IXRFD615 | IXYS-RF |
Description: IC GATE DRVR LOW-SIDE 6SMD |
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IXRFD615X2 | IXYS-RF | Description: IC GATE DRVR LOW-SIDE 8SMD |
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IXRFD630 | IXYS-RF |
Description: IC GATE DRVR LOW-SIDE 30A Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 18V Input Type: Non-Inverting Rise / Fall Time (Typ): 4ns, 4ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A DigiKey Programmable: Not Verified |
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IXRFD631-NRF | IXYS-RF |
Description: IC GATE DRVR LOW-SIDE 30A |
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IXRFDSM607X2 | IXYS-RF | Description: IC GATE DRVR LOW-SIDE 15A |
товар відсутній |
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.jpg "IXRFSM12N100") |
IXRFSM12N100 | IXYS-RF |
Description: MOSFET N-CH 1000V 12A 16SMPD Packaging: Tube Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 15V Power Dissipation (Max): 940W Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: 16-SMPD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 800 V |
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IXRFSM18N50 | IXYS-RF |
Description: MOSFET N-CH 500V 19A 16SMPD Packaging: Tube Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V Power Dissipation (Max): 835W Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: 16-SMPD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V |
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IXZ210N50L2 | IXYS-RF |
Description: RF MOSFET 100V DE275 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 10A Frequency: 70MHz Configuration: N-Channel Power - Output: 390W Gain: 17dB Technology: MOSFET Supplier Device Package: DE275 Part Status: Obsolete Voltage - Rated: 500 V Voltage - Test: 100 V |
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IXZ2210N50L2 | IXYS-RF |
Description: RF MOSFET 100V DE275 Packaging: Tube Package / Case: 8-SMD, Flat Lead Exposed Pad Current Rating (Amps): 10A Frequency: 70MHz Configuration: 2 N-Channel (Dual) Power - Output: 270W Gain: 17dB Technology: MOSFET Part Status: Obsolete Voltage - Rated: 500 V Voltage - Test: 100 V |
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IXZ308N120 | IXYS-RF |
Description: RF MOSFET 100V DE375 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 8A Frequency: 65MHz Configuration: N-Channel Power - Output: 880W Gain: 23dB Technology: MOSFET Supplier Device Package: DE375 Voltage - Rated: 1200 V Voltage - Test: 100 V |
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IXZ316N60 | IXYS-RF |
Description: RF MOSFET 100V DE375 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 18A Frequency: 65MHz Configuration: N-Channel Power - Output: 880W Gain: 23dB Technology: MOSFET Supplier Device Package: DE375 Voltage - Rated: 600 V Voltage - Test: 100 V |
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IXZ631DF12N100 | IXYS-RF |
Description: IC GATE DRVR LOW-SIDE 10SMD Packaging: Tube Package / Case: 10-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1000 V Supplier Device Package: 10-SMD Rise / Fall Time (Typ): 2.4ns, 1.55ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 72A, 72A DigiKey Programmable: Not Verified |
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IXZH10N50L2A | IXYS-RF |
Description: RF MOSFET 100V TO247 Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 10A Frequency: 70MHz Configuration: N-Channel Power - Output: 200W Gain: 17dB Technology: MOSFET Supplier Device Package: TO-247 (IXFH) Part Status: Obsolete Voltage - Rated: 500 V Voltage - Test: 100 V |
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IXZH10N50L2B | IXYS-RF |
Description: RF MOSFET 100V TO247 Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 10A Frequency: 70MHz Configuration: N-Channel Power - Output: 200W Gain: 17dB Technology: MOSFET Supplier Device Package: TO-247 (IXFH) Part Status: Obsolete Voltage - Rated: 500 V Voltage - Test: 100 V |
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| IXZH16N60 | IXYS-RF |
Description: RF MOSFET 600V TO247AD Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 1mA Configuration: N-Channel Power - Output: 350W Technology: MOSFET Supplier Device Package: TO-247AD Voltage - Rated: 600 V |
товар відсутній |
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.jpg "IXZR08N120") |
IXZR08N120 | IXYS-RF |
Description: RF MOSFET N-CHANNEL PLUS247-3 |
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IXZR08N120A-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL PLUS247-3 |
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IXZR08N120B-00 | IXYS-RF |
Description: RF MOSFET N-CHANNEL PLUS247-3 |
товар відсутній |
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.jpg "IXZR16N60") |
IXZR16N60 | IXYS-RF |
Description: RF MOSFET PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 18A Frequency: 65MHz Configuration: N-Channel Power - Output: 350W Gain: 23dB Technology: MOSFET Supplier Device Package: PLUS247™-3 Voltage - Rated: 600 V |
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PRF-1150 | IXYS-RF |
Description: 1KW 13.56MHZ CLASS E RF SOURCE Packaging: Box For Use With/Related Products: DE275X2-102N06A, DEIC420 Frequency: 13.56MHz Type: MOSFET Driver Supplied Contents: Board(s) Part Status: Obsolete |
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SS150TA60110 | IXYS-RF |
Description: DIODE ARR SIC SCHOT 600V DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 3 Common Anode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: DE150 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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SS150TC60110 | IXYS-RF |
Description: DIODE ARR SIC SCHOT 600V DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 3 Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: DE150 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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SS150TI60110 | IXYS-RF |
Description: DIODE ARR SIC SCHOT 600V DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: DE150 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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SS275TA12205 | IXYS-RF |
Description: DIODE ARRAY SCHOTTKY 1200V DE275 |
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SS275TC12205 | IXYS-RF |
Description: DIODE ARRAY SCHOTTKY 1200V DE275 |
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SS275TI12205 | IXYS-RF |
Description: DIODE ARRAY SCHOTTKY 1200V DE275 |
товар відсутній |
| 150-101N09A-00 |
Виробник: IXYS-RF
Description: RF MOSFET N-CHANNEL DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 9A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET
Supplier Device Package: DE150
Voltage - Rated: 100 V
Description: RF MOSFET N-CHANNEL DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 9A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET
Supplier Device Package: DE150
Voltage - Rated: 100 V
товар відсутній
| 150-102N02A-00 |
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Виробник: IXYS-RF
Description: RF MOSFET N-CHANNEL DE150
Description: RF MOSFET N-CHANNEL DE150
на замовлення 105 шт:
термін постачання 21-31 дні (днів)| 150-201N09A-00 |
|
Виробник: IXYS-RF
Description: RF MOSFET N-CHANNEL DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 9A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET
Supplier Device Package: DE150
Voltage - Rated: 200 V
Description: RF MOSFET N-CHANNEL DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 9A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET
Supplier Device Package: DE150
Voltage - Rated: 200 V
товар відсутній
| 275-101N30A-00 |
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Виробник: IXYS-RF
Description: RF MOSFET N-CHANNEL DE275
Description: RF MOSFET N-CHANNEL DE275
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| 475-102N20A-00 |
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Виробник: IXYS-RF
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 20A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 1000 V
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 20A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 1000 V
товар відсутній
| 475-501N44A-00 |
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Виробник: IXYS-RF
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 48A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 500 V
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 48A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 500 V
товар відсутній
| DE150-102N02A |
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Виробник: IXYS-RF
Description: RF MOSFET N-CHANNEL DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 2A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET
Supplier Device Package: DE150
Voltage - Rated: 1000 V
Description: RF MOSFET N-CHANNEL DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 2A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET
Supplier Device Package: DE150
Voltage - Rated: 1000 V
товар відсутній
| DE375-501N21A |
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Виробник: IXYS-RF
Description: RF MOSFET DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 25A
Frequency: 50MHz
Configuration: N-Channel
Power - Output: 940W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE375
Voltage - Rated: 500 V
Description: RF MOSFET DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 25A
Frequency: 50MHz
Configuration: N-Channel
Power - Output: 940W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE375
Voltage - Rated: 500 V
товар відсутній
| DE475-102N21A |
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Виробник: IXYS-RF
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 24A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 1000 V
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 24A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 1000 V
товар відсутній
| DVRFD615X2 |
Виробник: IXYS-RF
Description: IXRFD615X2 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD615X2
Type: MOSFET Driver
Supplied Contents: Board(s)
Description: IXRFD615X2 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD615X2
Type: MOSFET Driver
Supplied Contents: Board(s)
товар відсутній
| DVRFD630-150/275 |
Виробник: IXYS-RF
Description: IXRFD630 DE-150/DE-275 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD630
Type: MOSFET Driver
Supplied Contents: Board(s)
Description: IXRFD630 DE-150/DE-275 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD630
Type: MOSFET Driver
Supplied Contents: Board(s)
товар відсутній
| DVRFD630-375/475 |
Виробник: IXYS-RF
Description: IXRFD630 DE-375/DE-475 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD630
Type: MOSFET Driver
Supplied Contents: Board(s)
Description: IXRFD630 DE-375/DE-475 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD630
Type: MOSFET Driver
Supplied Contents: Board(s)
товар відсутній
| DVRFD631-375/475 |
Виробник: IXYS-RF
Description: IXRFD631 DE-375/DE-475 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD631
Type: MOSFET Driver
Supplied Contents: Board(s)
Description: IXRFD631 DE-375/DE-475 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD631
Type: MOSFET Driver
Supplied Contents: Board(s)
товар відсутній
| DVRFM631DF12N100 |
Виробник: IXYS-RF
Description: IXZ631DF12N100 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXZ631DF12N100
Type: MOSFET Driver
Supplied Contents: Board(s)
Part Status: Obsolete
Description: IXZ631DF12N100 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXZ631DF12N100
Type: MOSFET Driver
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| DVRFM631DF18N50 |
Виробник: IXYS-RF
Description: IXZ631DF18N50 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXZ631DF18N50
Type: MOSFET Driver
Supplied Contents: Board(s)
Part Status: Obsolete
Description: IXZ631DF18N50 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXZ631DF18N50
Type: MOSFET Driver
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| IXFK44N50F |
|
Виробник: IXYS-RF
Description: MOSFET N-CH 500V 44A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Description: MOSFET N-CH 500V 44A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
| IXRFD630 |
|
Виробник: IXYS-RF
Description: IC GATE DRVR LOW-SIDE 30A
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 4ns, 4ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 30A
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 4ns, 4ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
DigiKey Programmable: Not Verified
товар відсутній
| IXRFSM12N100 |
Виробник: IXYS-RF
Description: MOSFET N-CH 1000V 12A 16SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 15V
Power Dissipation (Max): 940W
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 16-SMPD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 800 V
Description: MOSFET N-CH 1000V 12A 16SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 15V
Power Dissipation (Max): 940W
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 16-SMPD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 800 V
товар відсутній
| IXRFSM18N50 |
Виробник: IXYS-RF
Description: MOSFET N-CH 500V 19A 16SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V
Power Dissipation (Max): 835W
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: 16-SMPD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V
Description: MOSFET N-CH 500V 19A 16SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.5A, 20V
Power Dissipation (Max): 835W
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: 16-SMPD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 400 V
товар відсутній
| IXZ210N50L2 |
|
Виробник: IXYS-RF
Description: RF MOSFET 100V DE275
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: N-Channel
Power - Output: 390W
Gain: 17dB
Technology: MOSFET
Supplier Device Package: DE275
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
Description: RF MOSFET 100V DE275
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: N-Channel
Power - Output: 390W
Gain: 17dB
Technology: MOSFET
Supplier Device Package: DE275
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
товар відсутній
| IXZ2210N50L2 |
|
Виробник: IXYS-RF
Description: RF MOSFET 100V DE275
Packaging: Tube
Package / Case: 8-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: 2 N-Channel (Dual)
Power - Output: 270W
Gain: 17dB
Technology: MOSFET
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
Description: RF MOSFET 100V DE275
Packaging: Tube
Package / Case: 8-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: 2 N-Channel (Dual)
Power - Output: 270W
Gain: 17dB
Technology: MOSFET
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
товар відсутній
| IXZ308N120 |
|
Виробник: IXYS-RF
Description: RF MOSFET 100V DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 8A
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 880W
Gain: 23dB
Technology: MOSFET
Supplier Device Package: DE375
Voltage - Rated: 1200 V
Voltage - Test: 100 V
Description: RF MOSFET 100V DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 8A
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 880W
Gain: 23dB
Technology: MOSFET
Supplier Device Package: DE375
Voltage - Rated: 1200 V
Voltage - Test: 100 V
товар відсутній
| IXZ316N60 |
|
Виробник: IXYS-RF
Description: RF MOSFET 100V DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 18A
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 880W
Gain: 23dB
Technology: MOSFET
Supplier Device Package: DE375
Voltage - Rated: 600 V
Voltage - Test: 100 V
Description: RF MOSFET 100V DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 18A
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 880W
Gain: 23dB
Technology: MOSFET
Supplier Device Package: DE375
Voltage - Rated: 600 V
Voltage - Test: 100 V
товар відсутній
| IXZ631DF12N100 |
Виробник: IXYS-RF
Description: IC GATE DRVR LOW-SIDE 10SMD
Packaging: Tube
Package / Case: 10-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1000 V
Supplier Device Package: 10-SMD
Rise / Fall Time (Typ): 2.4ns, 1.55ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 72A, 72A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 10SMD
Packaging: Tube
Package / Case: 10-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1000 V
Supplier Device Package: 10-SMD
Rise / Fall Time (Typ): 2.4ns, 1.55ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 72A, 72A
DigiKey Programmable: Not Verified
товар відсутній
| IXZH10N50L2A |
|
Виробник: IXYS-RF
Description: RF MOSFET 100V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 17dB
Technology: MOSFET
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
Description: RF MOSFET 100V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 17dB
Technology: MOSFET
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
товар відсутній
| IXZH10N50L2B |
|
Виробник: IXYS-RF
Description: RF MOSFET 100V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 17dB
Technology: MOSFET
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
Description: RF MOSFET 100V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 10A
Frequency: 70MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 17dB
Technology: MOSFET
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 100 V
товар відсутній
| IXZH16N60 |
|
Виробник: IXYS-RF
Description: RF MOSFET 600V TO247AD
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 1mA
Configuration: N-Channel
Power - Output: 350W
Technology: MOSFET
Supplier Device Package: TO-247AD
Voltage - Rated: 600 V
Description: RF MOSFET 600V TO247AD
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 1mA
Configuration: N-Channel
Power - Output: 350W
Technology: MOSFET
Supplier Device Package: TO-247AD
Voltage - Rated: 600 V
товар відсутній
| IXZR16N60 |
|
Виробник: IXYS-RF
Description: RF MOSFET PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 18A
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 23dB
Technology: MOSFET
Supplier Device Package: PLUS247™-3
Voltage - Rated: 600 V
Description: RF MOSFET PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 18A
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 23dB
Technology: MOSFET
Supplier Device Package: PLUS247™-3
Voltage - Rated: 600 V
товар відсутній
| PRF-1150 |
|
Виробник: IXYS-RF
Description: 1KW 13.56MHZ CLASS E RF SOURCE
Packaging: Box
For Use With/Related Products: DE275X2-102N06A, DEIC420
Frequency: 13.56MHz
Type: MOSFET Driver
Supplied Contents: Board(s)
Part Status: Obsolete
Description: 1KW 13.56MHZ CLASS E RF SOURCE
Packaging: Box
For Use With/Related Products: DE275X2-102N06A, DEIC420
Frequency: 13.56MHz
Type: MOSFET Driver
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| SS150TA60110 |
|
Виробник: IXYS-RF
Description: DIODE ARR SIC SCHOT 600V DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: DE150
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARR SIC SCHOT 600V DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: DE150
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| SS150TC60110 |
|
Виробник: IXYS-RF
Description: DIODE ARR SIC SCHOT 600V DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: DE150
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARR SIC SCHOT 600V DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: DE150
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| SS150TI60110 |
|
Виробник: IXYS-RF
Description: DIODE ARR SIC SCHOT 600V DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: DE150
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARR SIC SCHOT 600V DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: DE150
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній