| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| EVDD430MCI | IXYS |
 Description: BOARD EVALUATION IXDD430MCIPackaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDD430MCI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDD430MYI | IXYS |
Description: BOARD EVALUATION IXDD430MYI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDD430MYI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDD430YI | IXYS |
Description: BOARD EVALUATION IXDD430YI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDD430YI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDI402 | IXYS | Description: BOARD EVALUATION IXDI402 |
товар відсутній |
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| EVDI404 | IXYS |
Description: BOARD EVALUATION IXDI404 |
товар відсутній |
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| EVDI409 | IXYS |
Description: BOARD EVALUATION IXDI409 |
товар відсутній |
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| EVDI414 | IXYS |
Description: BOARD EVALUATION IXDI414 |
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| EVDI430CI | IXYS |
Description: BOARD EVALUATION IXDI430CI |
товар відсутній |
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| EVDI430MCI | IXYS |
Description: BOARD EVALUATION IXDI430MCI |
товар відсутній |
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| EVDI430MYI | IXYS |
Description: BOARD EVALUATION IXDI430MYI |
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| EVDI430YI | IXYS |
Description: BOARD EVALUATION IXDI430YI |
товар відсутній |
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| EVDN402 | IXYS |
Description: BOARD EVALUATION IXDN402 Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN402 Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN404 | IXYS |
Description: BOARD EVALUATION IXDN404 Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN404 Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN409 | IXYS |
Description: BOARD EVALUATION IXDN409 Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN409 Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN414 | IXYS |
Description: BOARD EVALUATION IXDN414 Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN414 Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN430CI | IXYS |
Description: BOARD EVALUATION IXDN430CI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN430CI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN430MCI | IXYS |
Description: BOARD EVALUATION IXDN430MCI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN430MCI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN430MYI | IXYS |
Description: BOARD EVALUATION IXDN430MYI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN430MYI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDN430YI | IXYS |
Description: BOARD EVALUATION IXDN430YI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDN430YI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVDP610 | IXYS |
Description: BOARD EVALUATION IXDP610 Packaging: Box Function: PWM Signal Generator Type: Timing Utilized IC / Part: IXDP610 Supplied Contents: Board(s) |
товар відсутній |
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| EVDS430SI | IXYS |
Description: BOARD EVALUATION IXDS430SI Packaging: Box Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IXDS430SI Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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| EVLB001 | IXYS | Description: KIT EVAL DIMMABLE LIGHT BALLAST |
товар відсутній |
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| EVLB002 | IXYS | Description: KIT EVAL NONDIM LIGHT BALLAST |
товар відсутній |
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| EVPS001 | IXYS |
Description: BOARD EVALUATION DESIGN KIT Packaging: Box Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: DSS2-60AT2, IXTY1R4N60P Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated |
товар відсутній |
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FBE22-06N1 | IXYS |
Description: BRIDGE RECT 1P 600V 20A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 2.13 V @ 11 A Current - Reverse Leakage @ Vr: 60 µA @ 600 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FBO16-12N | IXYS |
Description: BRIDGE RECT 1P 1.2KV 22A I4-PAC |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FBO40-12N | IXYS |
Description: BRIDGE RECT 1P 1.2KV 40A I4-PAC |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| FBS10-06SC | IXYS |
Description: BRIDGE RECT 1P 600V 6.6A I4-PAC |
товар відсутній |
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| FBS10-12SC | IXYS |
Description: BRIDGE RECT 1P 1.2KV 6.6A I4-PAC |
товар відсутній |
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FBS16-06SC | IXYS |
Description: BRIDGE RECT 1P 600V 11A I4-PAC Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: ISOPLUS i4-PAC™ Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 11 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
товар відсутній |
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| FCC21-12IO | IXYS |
Description: THYRISTOR PHASE CTRL 3HV I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 55 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 21 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Voltage - Off State: 1.2 kV |
товар відсутній |
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| FDM100-0045SP | IXYS |
Description: MOSFET N-CH 55V 100A I4-PAC-5 |
товар відсутній |
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| FDM21-05QC | IXYS |
Description: MOSFET N-CH 500V 21A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V |
товар відсутній |
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| FID35-06C | IXYS |
Description: IGBT 600V 38A 125W I4PAC5 |
товар відсутній |
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| FID36-06D | IXYS |
Description: IGBT 600V 38A 125W I4PAC5 |
товар відсутній |
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| FID60-06D | IXYS |
Description: IGBT 600V 65A 200W I4PAC5 |
товар відсутній |
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| FII24N17AH1 | IXYS |
Description: IGBT PHASE LEG HV ISOPLUS I4PAK5 |
товар відсутній |
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| FII24N17AH1S | IXYS | Description: IGBT PHASE LEG HV ISOPLUS I4PAKS |
товар відсутній |
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| FII30-06D | IXYS |
Description: IGBT H BRIDGE 600V 30A I4PAK5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A NTC Thermistor: No Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
товар відсутній |
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| FII30-12E | IXYS |
Description: IGBT H BRIDGE 1200V 33A I4PAK5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A NTC Thermistor: No Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 150 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V |
товар відсутній |
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| FII50-12E | IXYS |
Description: IGBT PHASE NPT3 ISOPLUS I4-PAC-5 |
товар відсутній |
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| FIO50-12BD | IXYS |
Description: IGBT 1200V 50A 200W I4PAC5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Switching Energy: 4.6mJ (on), 2.2mJ (off) Test Condition: 600V, 30A, 39Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
товар відсутній |
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| FMD21-05QC | IXYS |
Description: MOSFET N-CH 500V 21A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V |
товар відсутній |
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| FMD40-06KC | IXYS |
Description: MOSFET N-CH 600V 38A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
товар відсутній |
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| FMD80-0045PS | IXYS |
Description: MOSFET N-CH 55V 150A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V |
товар відсутній |
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| FMK75-01F | IXYS |
Description: MOSFET 2N-CH 100V 75A I4-PAC-5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active |
товар відсутній |
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| FMM150-0075P | IXYS |
Description: MOSFET 2N-CH 75V 150A I4-PAC-5 |
товар відсутній |
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| FMM300-0055P | IXYS |
Description: MOSFET 2N-CH 55V 300A I4-PAC-5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 300A Rds On (Max) @ Id, Vgs: 3.6mOhm @ 150A, 10V Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Obsolete |
товар відсутній |
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| FMM65-015P | IXYS |
Description: MOSFET 2N-CH 150V 65A I4-PAC-5 |
товар відсутній |
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| FMM75-01F | IXYS |
Description: MOSFET 2N-CH 100V 75A I4-PAC-5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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| FSS100-008A | IXYS |
Description: DIODE ARRAY SCHOTTKY 80V ISOPLUS |
товар відсутній |
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FUE30-12N1 | IXYS |
Description: BRIDGE RECT 1P 1.2KV 30A I4-PAC |
товар відсутній |
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FUO22-12N | IXYS |
Description: BRIDGE RECT 3P 1.2KV 28A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS i4-PAC™ Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 28 A Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 4189 шт: термін постачання 21-31 дні (днів) |
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FUO22-16N | IXYS |
Description: BRIDGE RECT 3P 1.6KV 28A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS i4-PAC™ Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 28 A Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 353 шт: термін постачання 21-31 дні (днів) |
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FUO50-16N | IXYS |
Description: BRIDGE RECT 3P 1.6KV 50A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS i4-PAC™ Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A Current - Reverse Leakage @ Vr: 20 µA @ 1600 V |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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FUS45-0045B | IXYS |
Description: BRIDGE RECT 3P 45V 45A I4-PAC |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| GBO25-12NO1 | IXYS |
Description: BRIDGE RECT 1P 1.2KV 25A 4SIP |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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| GBO25-16NO1 | IXYS |
Description: BRIDGE RECT 1P 1.6KV 25A 4SIP |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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| GDBD4410 | IXYS |
Description: BOARD EVALUATION IXBD4410/11 Packaging: Box Function: High and Low Side Driver (External FET) Type: Power Management Utilized IC / Part: IXBD4410, IXBD4411 Supplied Contents: Board(s) Embedded: No Part Status: Obsolete |
товар відсутній |
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| GWM160-0055P3 | IXYS |
Description: MOSFET 6N-CH 55V 160A ISODIL |
товар відсутній |
| EVDD430MCI |
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Виробник: IXYS
Description: BOARD EVALUATION IXDD430MCI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDD430MCI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDD430MCI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDD430MCI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDD430MYI |
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Виробник: IXYS
Description: BOARD EVALUATION IXDD430MYI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDD430MYI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDD430MYI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDD430MYI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDD430YI |
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Виробник: IXYS
Description: BOARD EVALUATION IXDD430YI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDD430YI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDD430YI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDD430YI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN402 |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN402
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN402
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN402
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN402
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN404 |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN404
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN404
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN404
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN404
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN409 |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN409
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN409
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN409
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN409
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN414 |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN414
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN414
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN414
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN414
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN430CI |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN430CI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430CI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN430CI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430CI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN430MCI |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN430MCI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430MCI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN430MCI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430MCI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN430MYI |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN430MYI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430MYI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN430MYI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430MYI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDN430YI |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDN430YI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430YI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDN430YI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDN430YI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDP610 |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDP610
Packaging: Box
Function: PWM Signal Generator
Type: Timing
Utilized IC / Part: IXDP610
Supplied Contents: Board(s)
Description: BOARD EVALUATION IXDP610
Packaging: Box
Function: PWM Signal Generator
Type: Timing
Utilized IC / Part: IXDP610
Supplied Contents: Board(s)
товар відсутній
| EVDS430SI |
|
Виробник: IXYS
Description: BOARD EVALUATION IXDS430SI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDS430SI
Supplied Contents: Board(s)
Part Status: Obsolete
Description: BOARD EVALUATION IXDS430SI
Packaging: Box
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IXDS430SI
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVPS001 |
Виробник: IXYS
Description: BOARD EVALUATION DESIGN KIT
Packaging: Box
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: DSS2-60AT2, IXTY1R4N60P
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Description: BOARD EVALUATION DESIGN KIT
Packaging: Box
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: DSS2-60AT2, IXTY1R4N60P
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
товар відсутній
| FBE22-06N1 |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 600V 20A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 2.13 V @ 11 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Description: BRIDGE RECT 1P 600V 20A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 2.13 V @ 11 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1100.39 грн |
| FBO16-12N |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 22A I4-PAC
Description: BRIDGE RECT 1P 1.2KV 22A I4-PAC
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| FBO40-12N |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 40A I4-PAC
Description: BRIDGE RECT 1P 1.2KV 40A I4-PAC
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| FBS16-06SC |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 600V 11A I4-PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 11 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: BRIDGE RECT 1P 600V 11A I4-PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 11 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
| FCC21-12IO |
|
Виробник: IXYS
Description: THYRISTOR PHASE CTRL 3HV I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 55 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 21 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.2 kV
Description: THYRISTOR PHASE CTRL 3HV I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 55 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 21 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.2 kV
товар відсутній
| FDM21-05QC |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 21A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Description: MOSFET N-CH 500V 21A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
товар відсутній
| FII30-06D |
Виробник: IXYS
Description: IGBT H BRIDGE 600V 30A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT H BRIDGE 600V 30A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товар відсутній
| FII30-12E |
|
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 33A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V
Description: IGBT H BRIDGE 1200V 33A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V
товар відсутній
| FIO50-12BD |
|
Виробник: IXYS
Description: IGBT 1200V 50A 200W I4PAC5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 4.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 30A, 39Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Description: IGBT 1200V 50A 200W I4PAC5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 4.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 30A, 39Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
| FMD21-05QC |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 21A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Description: MOSFET N-CH 500V 21A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
товар відсутній
| FMD40-06KC |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 38A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MOSFET N-CH 600V 38A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
| FMD80-0045PS |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 150A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 110A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Description: MOSFET N-CH 55V 150A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 110A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
товар відсутній
| FMK75-01F |
|
Виробник: IXYS
Description: MOSFET 2N-CH 100V 75A I4-PAC-5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Description: MOSFET 2N-CH 100V 75A I4-PAC-5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
| FMM300-0055P |
|
Виробник: IXYS
Description: MOSFET 2N-CH 55V 300A I4-PAC-5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 300A
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Description: MOSFET 2N-CH 55V 300A I4-PAC-5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 300A
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
товар відсутній
| FMM75-01F |
|
Виробник: IXYS
Description: MOSFET 2N-CH 100V 75A I4-PAC-5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Description: MOSFET 2N-CH 100V 75A I4-PAC-5
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
на замовлення 195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1679.7 грн |
| 10+ | 1492.05 грн |
| 100+ | 1274.13 грн |
| FUO22-12N |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 28A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 28 A
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: BRIDGE RECT 3P 1.2KV 28A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 28 A
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 4189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1363.17 грн |
| 25+ | 1063.15 грн |
| 100+ | 1000.6 грн |
| 500+ | 850.99 грн |
| FUO22-16N |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 28A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 28 A
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 28A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 28 A
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1349.74 грн |
| 25+ | 1052.33 грн |
| 100+ | 990.42 грн |
| FUO50-16N |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 50A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 50A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS i4-PAC™
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
на замовлення 348 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1493.07 грн |
| 10+ | 1277.75 грн |
| 100+ | 1117.57 грн |
| FUS45-0045B |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 45V 45A I4-PAC
Description: BRIDGE RECT 3P 45V 45A I4-PAC
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| GBO25-12NO1 |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 25A 4SIP
Description: BRIDGE RECT 1P 1.2KV 25A 4SIP
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| GBO25-16NO1 |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 1.6KV 25A 4SIP
Description: BRIDGE RECT 1P 1.6KV 25A 4SIP
на замовлення 28 шт:
термін постачання 21-31 дні (днів)