Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11534) > Сторінка 168 з 193
| Фото | Назва | Виробник | Інформація |
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3EZ150D10/TR12 | Microsemi Corporation |
 Description: DIODE ZENER 150V 3W DO204AL |
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3EZ150D2/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 3W DO204AL |
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MSD52-08 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 50A SM2 |
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1N5363B | Microsemi Corporation |
Description: ZENER DO201 30V 5W 5% Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 21.6 V |
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1N5349B | Microsemi Corporation |
 Description: ZENER DO201 12V 5W 5%Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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1N5349B | Microsemi Corporation |
Description: ZENER DO201 12V 5W 5% Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V |
на замовлення 8839 шт: термін постачання 21-31 дні (днів) |
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1N5369B | Microsemi Corporation |
Description: ZENER DO201 51V 5W 5% Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 27 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 36.7 V |
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2N6766 | Microsemi Corporation |
Description: MOSFET N-CH 200V 30A TO3 |
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| JANTX2N6766 | Microsemi Corporation |
Description: MOSFET N-CH 200V 30A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V |
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| JAN2N6766 | Microsemi Corporation |
Description: MOSFET N-CH 200V 30A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V |
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| JANTXV2N6766 | Microsemi Corporation |
Description: MOSFET N-CH 200V 30A TO3 |
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| APTGT100SK170D1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 200A 695W D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 695 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 8.5 nF @ 25 V |
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1N4688 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 4.7V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
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APT31N60BCSG | Microsemi Corporation |
Description: MOSFET N-CH 600V 31A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 25 V |
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APT11GP60BDQBG | Microsemi Corporation |
Description: IGBT 600V 41A 187W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A Supplier Device Package: TO-247-3 IGBT Type: PT Td (on/off) @ 25°C: 7ns/29ns Switching Energy: 46µJ (on), 90µJ (off) Test Condition: 400V, 11A, 5Ohm, 15V Gate Charge: 40 nC Part Status: Obsolete Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 187 W |
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APT15GP60BDLG | Microsemi Corporation |
Description: IGBT 600V 56A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Supplier Device Package: TO-247 IGBT Type: PT Td (on/off) @ 25°C: 8ns/29ns Switching Energy: 130µJ (on), 121µJ (off) Test Condition: 400V, 15A, 5Ohm, 15V Gate Charge: 55 nC Part Status: Active Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 65 A Power - Max: 250 W |
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1N5228A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 |
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| 2A8 | Microsemi Corporation |
Description: RF TRANS NPN 21V 2GHZ 55EU |
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JANTX1N6118US | Microsemi Corporation |
Description: TVS DIODE 25.1VWM 47.99VC AXIAL |
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JANTX1N6117US | Microsemi Corporation |
Description: TVS DIODE 22.8VWM 43.68V SQ-MELF |
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LX27912DW-TR | Microsemi Corporation |
Description: IC LED DRIVER CTRLR PWM 24SOIC |
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LX27902DW-TR | Microsemi Corporation |
Description: IC LED DRIVER CTRLR PWM 24SOIC |
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1N5361B | Microsemi Corporation |
Description: ZENER DO201 27V 5W 5% Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 19.4 V |
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JAN1N6624U | Microsemi Corporation | Description: DIODE GEN PURP 900V 1A D-5A |
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JANTXV1N6625U | Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Qualification: MIL-PRF-19500/585 |
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| PD-IM-7608A | Microsemi Corporation | Description: POE EVB |
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JANTX1N4481CUS | Microsemi Corporation |
Description: DIODE ZENER 47V 1.5W D5A Packaging: Bulk Tolerance: ±2% Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: D-5A Grade: Military Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V Qualification: MIL-PRF-19500/406 |
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JANTX1N4487D | Microsemi Corporation |
Description: DIODE ZENER 82V 1.5W DO41 |
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LXMG1617A-12-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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LXMG1618A-12-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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LXM1617-05-61 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG Packaging: Bulk Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm) Mounting Type: Chassis Mount Output: 1800V Voltage - Input: 5V Type: CCFL and UV Lamps Part Status: Obsolete |
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LXMG1611-01 | Microsemi Corporation |
Description: MOD INVERTER CCFL DIGITAL DIM |
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| LXMG1618-12-63 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 12V PROG |
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LXMG1618A-05-61 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG |
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| LXMG1617-05-43 | Microsemi Corporation | Description: MOD INVERTER CCFL 4W 5V PROG |
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| LXMG1617-05-63 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 5V PROG |
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| LXMG1618-05-63 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG Packaging: Bulk Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm) Mounting Type: Chassis Mount Output: 1800V Voltage - Input: 5V Type: CCFL and UV Lamps |
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LXM1618-12-61 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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| LXM1618-12-63 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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LXM1618-12-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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LXMG1617A-05-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG |
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| LXM1618-05-63 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG Packaging: Bulk Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm) Mounting Type: Chassis Mount Output: 1800V Voltage - Input: 5V Type: CCFL and UV Lamps |
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LXM1617-05-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG |
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LXM1617-12-61 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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LXM1611-01 | Microsemi Corporation |
Description: MOD CCFL INVERTER DIGITAL DIM |
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LXM1618-05-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG Packaging: Bulk Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm) Mounting Type: Chassis Mount Output: 1800V Voltage - Input: 5V Type: CCFL and UV Lamps |
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LXMG1617-12-61 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 12V PROG |
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| LXM1617-05-63 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG |
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1N4701 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 14V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 14 V Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V |
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FST160100 | Microsemi Corporation |
Description: DIODE MODULE 100V 80A TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
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FST160100A | Microsemi Corporation |
Description: DIODE MODULE 100V TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
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FST160100D | Microsemi Corporation |
Description: DIODE MODULE 100V TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
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MP5KE26CA | Microsemi Corporation |
Description: TVS DIODE 26VWM 42.1VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.9A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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LX24232ILQ-TR | Microsemi Corporation |
Description: IC LED DRIVER PWM 200MA 56QFN |
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LX24132ILQ-TR | Microsemi Corporation |
Description: IC LED DRIVER PWM 200MA 56QFN |
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| 1N4890 | Microsemi Corporation |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
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| 1N4890A | Microsemi Corporation |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
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| AGL250V2-VQG100T | Microsemi Corporation |
Description: IC FPGA 68 I/O 100VQFP |
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| AGL250V2-VQ100T | Microsemi Corporation |
Description: IC FPGA 68 I/O 100VQFP |
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AGL250V2-FG144T | Microsemi Corporation |
Description: IC FPGA 97 I/O 144FBGA |
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| 3EZ150D10/TR12 |
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Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 3W DO204AL
Description: DIODE ZENER 150V 3W DO204AL
товар відсутній
| 3EZ150D2/TR8 |
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Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 3W DO204AL
Description: DIODE ZENER 150V 3W DO204AL
товар відсутній
| MSD52-08 |
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Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 50A SM2
Description: BRIDGE RECT 3PHASE 800V 50A SM2
товар відсутній
| 1N5363B |
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Виробник: Microsemi Corporation
Description: ZENER DO201 30V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 21.6 V
Description: ZENER DO201 30V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 21.6 V
товар відсутній
| 1N5349B | |
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Виробник: Microsemi Corporation
Description: ZENER DO201 12V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
Description: ZENER DO201 12V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 162.86 грн |
| 1N5349B | |
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Виробник: Microsemi Corporation
Description: ZENER DO201 12V 5W 5%
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
Description: ZENER DO201 12V 5W 5%
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
на замовлення 8839 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.44 грн |
| 100+ | 156.83 грн |
| 1N5369B | |
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Виробник: Microsemi Corporation
Description: ZENER DO201 51V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 27 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 36.7 V
Description: ZENER DO201 51V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 27 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 36.7 V
товар відсутній
| JANTX2N6766 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Description: MOSFET N-CH 200V 30A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
товар відсутній
| JAN2N6766 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Description: MOSFET N-CH 200V 30A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
товар відсутній
| APTGT100SK170D1G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 200A 695W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 25 V
Description: IGBT MODULE 1700V 200A 695W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 25 V
товар відсутній
| 1N4688 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
товар відсутній
| APT31N60BCSG |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 25 V
Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 25 V
товар відсутній
| APT11GP60BDQBG |
|
Виробник: Microsemi Corporation
Description: IGBT 600V 41A 187W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: PT
Td (on/off) @ 25°C: 7ns/29ns
Switching Energy: 46µJ (on), 90µJ (off)
Test Condition: 400V, 11A, 5Ohm, 15V
Gate Charge: 40 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 187 W
Description: IGBT 600V 41A 187W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: PT
Td (on/off) @ 25°C: 7ns/29ns
Switching Energy: 46µJ (on), 90µJ (off)
Test Condition: 400V, 11A, 5Ohm, 15V
Gate Charge: 40 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 187 W
товар відсутній
| APT15GP60BDLG |
|
Виробник: Microsemi Corporation
Description: IGBT 600V 56A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Description: IGBT 600V 56A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
товар відсутній
| 1N5228A (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Description: DIODE ZENER 3.9V 500MW DO35
товар відсутній
| JANTX1N6118US |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 25.1VWM 47.99VC AXIAL
Description: TVS DIODE 25.1VWM 47.99VC AXIAL
товар відсутній
| JANTX1N6117US |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 22.8VWM 43.68V SQ-MELF
Description: TVS DIODE 22.8VWM 43.68V SQ-MELF
товар відсутній
| LX27912DW-TR |
|
Виробник: Microsemi Corporation
Description: IC LED DRIVER CTRLR PWM 24SOIC
Description: IC LED DRIVER CTRLR PWM 24SOIC
товар відсутній
| LX27902DW-TR |
|
Виробник: Microsemi Corporation
Description: IC LED DRIVER CTRLR PWM 24SOIC
Description: IC LED DRIVER CTRLR PWM 24SOIC
товар відсутній
| 1N5361B | |
|
Виробник: Microsemi Corporation
Description: ZENER DO201 27V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 19.4 V
Description: ZENER DO201 27V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 19.4 V
товар відсутній
| JANTXV1N6625U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 1KV 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/585
товар відсутній
| JANTX1N4481CUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 1.5W D5A
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Qualification: MIL-PRF-19500/406
Description: DIODE ZENER 47V 1.5W D5A
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Qualification: MIL-PRF-19500/406
товар відсутній
| LXMG1617A-12-62 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXMG1618A-12-62 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXM1617-05-61 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Part Status: Obsolete
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Part Status: Obsolete
товар відсутній
| LXMG1611-01 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL DIGITAL DIM
Description: MOD INVERTER CCFL DIGITAL DIM
товар відсутній
| LXMG1618-12-63 |
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXMG1618A-05-61 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
товар відсутній
| LXMG1617-05-43 |
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 4W 5V PROG
Description: MOD INVERTER CCFL 4W 5V PROG
товар відсутній
| LXMG1617-05-63 |
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
товар відсутній
| LXMG1618-05-63 |
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
товар відсутній
| LXM1618-12-61 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXM1618-12-63 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXM1618-12-62 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXMG1617A-05-62 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
товар відсутній
| LXM1618-05-63 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
товар відсутній
| LXM1617-05-62 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
товар відсутній
| LXM1617-12-61 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXM1611-01 |
|
Виробник: Microsemi Corporation
Description: MOD CCFL INVERTER DIGITAL DIM
Description: MOD CCFL INVERTER DIGITAL DIM
товар відсутній
| LXM1618-05-62 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
товар відсутній
| LXMG1617-12-61 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
товар відсутній
| LXM1617-05-63 |
|
Виробник: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
товар відсутній
| 1N4701 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
товар відсутній
| FST160100 |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE 100V 80A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MODULE 100V 80A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
товар відсутній
| FST160100A |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
товар відсутній
| FST160100D |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
товар відсутній
| MP5KE26CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 26VWM 42.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 26VWM 42.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| LX24232ILQ-TR |
|
Виробник: Microsemi Corporation
Description: IC LED DRIVER PWM 200MA 56QFN
Description: IC LED DRIVER PWM 200MA 56QFN
товар відсутній
| LX24132ILQ-TR |
|
Виробник: Microsemi Corporation
Description: IC LED DRIVER PWM 200MA 56QFN
Description: IC LED DRIVER PWM 200MA 56QFN
товар відсутній
| 1N4890 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
товар відсутній
| 1N4890A |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
товар відсутній