Результат пошуку "20nc60" : 22
Вид перегляду :
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 3
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 3
Мінімальне замовлення: 6
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STGP20NC60V | STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp |
на замовлення 1939 шт: термін постачання 21-30 дні (днів) |
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STGP20NC60V | STMicroelectronics |
Description: IGBT 600V 60A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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STGW20NC60V | STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp |
на замовлення 1195 шт: термін постачання 105-114 дні (днів) |
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STGW20NC60VD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 306 шт: термін постачання 21-30 дні (днів) |
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STGW20NC60VD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 306 шт: термін постачання 7-14 дні (днів) |
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STGW20NC60VD | STMicroelectronics |
Description: IGBT 600V 60A 200W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 200 W |
на замовлення 149 шт: термін постачання 21-31 дні (днів) |
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STGW20NC60VD | STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp |
на замовлення 1580 шт: термін постачання 21-30 дні (днів) |
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STGW20NC60VD | ST |
60A; 600V; 200W; IGBT STGW20NC60VD STMicroelectronics TSTGW20nc60vd кількість в упаковці: 2 шт |
на замовлення 48 шт: термін постачання 28-31 дні (днів) |
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STGB20NC60V |
на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
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STGW20NC60V |
на замовлення 2900 шт: термін постачання 14-28 дні (днів) |
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W1520NC600 | WESTCODE | 1478A/6000V/DIODE |
на замовлення 27 шт: термін постачання 14-28 дні (днів) |
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STGW20NC60VD Код товару: 33417 |
ST |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,5 V Ic 25: 60 A Ic 100: 30 A Pd 25: 200 W td(on)/td(off) 100-150 град: 31/100 |
товар відсутній
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STGB20NC60V | STMicroelectronics |
Description: IGBT 600V 60A 200W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
товар відсутній |
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STGB20NC60V | STMicroelectronics |
Description: IGBT 600V 60A 200W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
товар відсутній |
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STGB20NC60VT4 | STMicroelectronics |
Description: IGBT 600V 60A 200W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
товар відсутній |
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STGP20NC60V | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube |
товар відсутній |
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STGP20NC60V | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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STGW20NC60V | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube |
товар відсутній |
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STGW20NC60V | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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STGW20NC60V | STMicroelectronics |
Description: IGBT 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
товар відсутній |
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W1520NC600 | IXYS | Rectifiers |
товар відсутній |
STGP20NC60V |
Виробник: STMicroelectronics
IGBT Transistors N-Ch 600 Volt 30 Amp
IGBT Transistors N-Ch 600 Volt 30 Amp
на замовлення 1939 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 246.88 грн |
10+ | 229.75 грн |
25+ | 136.7 грн |
100+ | 117.64 грн |
500+ | 111.07 грн |
1000+ | 103.18 грн |
STGP20NC60V |
Виробник: STMicroelectronics
Description: IGBT 600V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 600V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.91 грн |
50+ | 174.88 грн |
100+ | 149.91 грн |
STGW20NC60V |
Виробник: STMicroelectronics
IGBT Transistors N-Ch 600 Volt 30 Amp
IGBT Transistors N-Ch 600 Volt 30 Amp
на замовлення 1195 шт:
термін постачання 105-114 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 282.92 грн |
10+ | 234.29 грн |
25+ | 191.9 грн |
100+ | 164.3 грн |
250+ | 155.1 грн |
600+ | 145.9 грн |
1200+ | 125.52 грн |
STGW20NC60VD |
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 306 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 145.13 грн |
8+ | 112.27 грн |
10+ | 111.59 грн |
20+ | 106.11 грн |
120+ | 102 грн |
STGW20NC60VD |
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 306 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.78 грн |
3+ | 180.85 грн |
8+ | 134.72 грн |
10+ | 133.9 грн |
20+ | 127.33 грн |
120+ | 122.4 грн |
STGW20NC60VD |
Виробник: STMicroelectronics
Description: IGBT 600V 60A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Description: IGBT 600V 60A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
на замовлення 149 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 201.19 грн |
30+ | 153.91 грн |
120+ | 131.94 грн |
STGW20NC60VD |
Виробник: STMicroelectronics
IGBT Transistors N-Ch 600 Volt 30 Amp
IGBT Transistors N-Ch 600 Volt 30 Amp
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.68 грн |
10+ | 118.66 грн |
25+ | 99.24 грн |
100+ | 95.95 грн |
250+ | 92.66 грн |
600+ | 91.35 грн |
STGW20NC60VD |
Виробник: ST
60A; 600V; 200W; IGBT STGW20NC60VD STMicroelectronics TSTGW20nc60vd
кількість в упаковці: 2 шт
60A; 600V; 200W; IGBT STGW20NC60VD STMicroelectronics TSTGW20nc60vd
кількість в упаковці: 2 шт
на замовлення 48 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 111.73 грн |
W1520NC600 |
Виробник: WESTCODE
1478A/6000V/DIODE
1478A/6000V/DIODE
на замовлення 27 шт:
термін постачання 14-28 дні (днів)STGW20NC60VD Код товару: 33417 |
Виробник: ST
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 60 A
Ic 100: 30 A
Pd 25: 200 W
td(on)/td(off) 100-150 град: 31/100
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 60 A
Ic 100: 30 A
Pd 25: 200 W
td(on)/td(off) 100-150 град: 31/100
товар відсутній
STGB20NC60V |
Виробник: STMicroelectronics
Description: IGBT 600V 60A 200W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 600V 60A 200W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
STGB20NC60V |
Виробник: STMicroelectronics
Description: IGBT 600V 60A 200W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 600V 60A 200W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
STGB20NC60VT4 |
Виробник: STMicroelectronics
Description: IGBT 600V 60A 200W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 600V 60A 200W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
STGP20NC60V |
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
товар відсутній
STGP20NC60V |
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
STGW20NC60V |
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
товар відсутній
STGW20NC60V |
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
STGW20NC60V |
Виробник: STMicroelectronics
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній