Результат пошуку "2SC609" : > 60
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Мінімальне замовлення: 329
Мінімальне замовлення: 396
Мінімальне замовлення: 1112
Мінімальне замовлення: 7
Мінімальне замовлення: 7
Мінімальне замовлення: 100
Мінімальне замовлення: 1000
Мінімальне замовлення: 15
Мінімальне замовлення: 100
Мінімальне замовлення: 700
Мінімальне замовлення: 1400
Мінімальне замовлення: 12
Мінімальне замовлення: 12
Мінімальне замовлення: 331
Мінімальне замовлення: 7
Мінімальне замовлення: 7
Мінімальне замовлення: 952
Мінімальне замовлення: 1500
Мінімальне замовлення: 876
Мінімальне замовлення: 1110
Мінімальне замовлення: 1500
Мінімальне замовлення: 700
Мінімальне замовлення: 6
Мінімальне замовлення: 6
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2SC6091 | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 700 V Power - Max: 3 W Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A Supplier Device Package: TO-3PMLH |
на замовлення 88985 шт: термін постачання 21-31 дні (днів) |
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2SC6091 | ONSEMI |
Description: ONSEMI - 2SC6091 - 2SC6091, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 88985 шт: термін постачання 21-31 дні (днів) |
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2SC6094-TD-E | onsemi |
Description: TRANS NPN 60V 3A PCP Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
на замовлення 4130 шт: термін постачання 21-31 дні (днів) |
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2SC6096-TD-E | onsemi | Bipolar Transistors - BJT BIP NPN 2A 100V |
на замовлення 8443 шт: термін постачання 21-30 дні (днів) |
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2SC6096-TD-E | onsemi |
Description: TRANS NPN 100V 2A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.3 W |
на замовлення 3549 шт: термін постачання 21-31 дні (днів) |
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2SC6096-TD-E | ONSEMI |
Description: ONSEMI - 2SC6096-TD-E - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 3.5 W, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 300hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 2A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 3.5W Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 100V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 300MHz Betriebstemperatur, max.: 150°C |
на замовлення 286 шт: термін постачання 21-31 дні (днів) |
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2SC6096-TD-E | onsemi |
Description: TRANS NPN 100V 2A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.3 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC6096-TD-E | ONSEMI |
Description: ONSEMI - 2SC6096-TD-E - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 3.5 W, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 300hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 2A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 3.5W Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 100V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 300MHz Betriebstemperatur, max.: 150°C |
на замовлення 286 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | ONSEMI |
Description: ONSEMI - 2SC6097-TL-E - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 3 A, 15 W, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 300hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 3A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 15W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 60V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 390MHz Betriebstemperatur, max.: 150°C |
на замовлення 1097 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | onsemi |
Description: TRANS NPN 60V 3A TP Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | ONSEMI |
Description: ONSEMI - 2SC6097-TL-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 76612 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | ONSEMI |
Description: ONSEMI - 2SC6097-TL-E - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 3 A, 15 W, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 300hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 3A MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 15W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 60V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 390MHz Betriebstemperatur, max.: 150°C |
на замовлення 1097 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | onsemi |
Description: TRANS NPN 60V 3A TP Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 14728 шт: термін постачання 21-31 дні (днів) |
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2SC6097-TL-E | onsemi | Bipolar Transistors - BJT HIGH-CURRENT SWITCHING |
на замовлення 1366 шт: термін постачання 77-86 дні (днів) |
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2SC6098-E | onsemi |
Description: TRANS NPN 80V 2.5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 350MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
на замовлення 14500 шт: термін постачання 21-31 дні (днів) |
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2SC6098-E | ONSEMI |
Description: ONSEMI - 2SC6098-E - 2SC6098-E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 14500 шт: термін постачання 21-31 дні (днів) |
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2SC6098-TL-E | onsemi |
Description: TRANS NPN 80V 2.5A TPFA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 350MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
на замовлення 8409 шт: термін постачання 21-31 дні (днів) |
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2SC6099-E | onsemi |
Description: TRANS NPN 100V 2A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC6099-E | ONSEMI |
Description: ONSEMI - 2SC6099-E - 2SC6099-E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC6099-TL-E | onsemi |
Description: TRANS NPN 100V 2A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
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2SC6099-TL-E | ON Semiconductor | Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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2SC6099-TL-E | onsemi |
Description: TRANS NPN 100V 2A TPFA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 1380 шт: термін постачання 21-31 дні (днів) |
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2SC6099-TL-E | onsemi | Bipolar Transistors - BJT BIP NPN 2A 100V |
на замовлення 674 шт: термін постачання 91-100 дні (днів) |
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2SC609 |
на замовлення 17400 шт: термін постачання 14-28 дні (днів) |
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2SC6095-TD-E | ON Semiconductor |
на замовлення 970 шт: термін постачання 14-28 дні (днів) |
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2SC6097-TL-E | ON Semiconductor |
на замовлення 4018 шт: термін постачання 14-28 дні (днів) |
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2SC6097-TL-E | SANYO | SOT252/2.5 |
на замовлення 27940 шт: термін постачання 14-28 дні (днів) |
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2SC6099-TL-E | SANYO | TO-252 08+ |
на замовлення 700 шт: термін постачання 14-28 дні (днів) |
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2SC609T |
на замовлення 17400 шт: термін постачання 14-28 дні (днів) |
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2SC6090 (транзистор біполярный NPN) Код товару: 34462 |
Sanyo |
Транзистори > Біполярні NPN Корпус: TO-220F Uceo,V: 700 V Ucbo,V: 1500 V Ic,A: 10 A h21: 15 |
товар відсутній
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2SC6094-TD-E | onsemi |
Description: TRANS NPN 60V 3A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
товар відсутній |
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2SC6094-TD-E | onsemi |
Description: TRANS NPN 60V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
товар відсутній |
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2SC6094-TD-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
товар відсутній |
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2SC6095-TD-E | ON Semiconductor | Trans GP BJT NPN 80V 2.5A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
товар відсутній |
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2SC6095-TD-E | onsemi |
Description: TRANS NPN 80V 2.5A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 350MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.3 W |
товар відсутній |
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2SC6095-TD-E | onsemi |
Description: TRANS NPN 80V 2.5A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 350MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.3 W |
товар відсутній |
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2SC6096-TD-E | ON Semiconductor | Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
товар відсутній |
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2SC6096-TD-E | ON Semiconductor | Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
товар відсутній |
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2SC6096-TD-H | ON Semiconductor | Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
товар відсутній |
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2SC6096-TD-H | onsemi |
Description: TRANS NPN 100V 2A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.3 W |
товар відсутній |
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2SC6096-TD-H | onsemi |
Description: TRANS NPN 100V 2A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.3 W |
товар відсутній |
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2SC6097-E | onsemi |
Description: TRANS NPN 60V 3A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
товар відсутній |
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2SC6097-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 800mW 3-Pin(3+Tab) TP Bag |
товар відсутній |
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2SC6097-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 0.8W Case: DPAK Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
товар відсутній |
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2SC6097-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 0.8W Case: DPAK Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz кількість в упаковці: 1 шт |
товар відсутній |
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2SC6097-TL-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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2SC6097-TL-E | ON Semiconductor | Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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2SC6098-E | ON Semiconductor | Trans GP BJT NPN 80V 2.5A 800mW 3-Pin(3+Tab) TP Bag |
товар відсутній |
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2SC6098-E | onsemi |
Description: TRANS NPN 80V 2.5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 350MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
товар відсутній |
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2SC6098-TL-E | ON Semiconductor | Trans GP BJT NPN 80V 2.5A 800mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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2SC6098-TL-E | onsemi |
Description: TRANS NPN 80V 2.5A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 350MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
товар відсутній |
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2SC6099-E | ON Semiconductor | Trans GP BJT NPN 100V 2A 800mW 3-Pin(3+Tab) TP Bag |
товар відсутній |
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2SC6099-E | onsemi |
Description: TRANS NPN 100V 2A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
товар відсутній |
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2SC6099-TL-E | ON Semiconductor | Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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2SC6099-TL-E | ON Semiconductor | Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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NTE237 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 60V; 2A; 10W; TO39; Pout: 3.5W Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 10W Case: TO39 Mounting: THT Frequency: 27MHz Output power: 3.5W |
товар відсутній |
2SC6091 |
Виробник: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 3 W
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A
Supplier Device Package: TO-3PMLH
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 3 W
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A
Supplier Device Package: TO-3PMLH
на замовлення 88985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
329+ | 59.74 грн |
2SC6091 |
Виробник: ONSEMI
Description: ONSEMI - 2SC6091 - 2SC6091, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC6091 - 2SC6091, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 88985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
396+ | 61.34 грн |
2SC6094-TD-E |
Виробник: onsemi
Description: TRANS NPN 60V 3A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS NPN 60V 3A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
на замовлення 4130 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1112+ | 17.72 грн |
2SC6096-TD-E |
Виробник: onsemi
Bipolar Transistors - BJT BIP NPN 2A 100V
Bipolar Transistors - BJT BIP NPN 2A 100V
на замовлення 8443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.08 грн |
10+ | 39.07 грн |
100+ | 24.38 грн |
500+ | 20.44 грн |
1000+ | 17.35 грн |
2000+ | 15.44 грн |
5000+ | 14.92 грн |
2SC6096-TD-E |
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
на замовлення 3549 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.08 грн |
10+ | 36.56 грн |
100+ | 25.29 грн |
500+ | 19.82 грн |
2SC6096-TD-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6096-TD-E - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 3.5 W, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 3.5W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 100V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2SC6096-TD-E - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 3.5 W, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 3.5W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 100V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
на замовлення 286 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 27.35 грн |
2SC6096-TD-E |
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
Description: TRANS NPN 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 18.67 грн |
2000+ | 16.01 грн |
2SC6096-TD-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6096-TD-E - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 3.5 W, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 3.5W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 100V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2SC6096-TD-E - Bipolarer Einzeltransistor (BJT), NPN, 100 V, 2 A, 3.5 W, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 2A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 3.5W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 100V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
на замовлення 286 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 51.83 грн |
18+ | 43.05 грн |
100+ | 27.35 грн |
2SC6097-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
на замовлення 156 шт:
термін постачання 21-31 дні (днів)2SC6097-TL-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6097-TL-E - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 3 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 390MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2SC6097-TL-E - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 3 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 390MHz
Betriebstemperatur, max.: 150°C
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 33.62 грн |
500+ | 26.7 грн |
700+ | 20.47 грн |
2SC6097-TL-E |
Виробник: onsemi
Description: TRANS NPN 60V 3A TP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 3A TP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
700+ | 22.65 грн |
1400+ | 18.56 грн |
2100+ | 16.53 грн |
4900+ | 14.7 грн |
2SC6097-TL-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6097-TL-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC6097-TL-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 76612 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1400+ | 21.67 грн |
2SC6097-TL-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6097-TL-E - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 3 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 390MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2SC6097-TL-E - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 3 A, 15 W, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 300hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 390MHz
Betriebstemperatur, max.: 150°C
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 63.48 грн |
14+ | 53.74 грн |
100+ | 33.62 грн |
500+ | 26.7 грн |
700+ | 20.47 грн |
2SC6097-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
на замовлення 601 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 51.07 грн |
14+ | 44.17 грн |
100+ | 31.79 грн |
2SC6097-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
на замовлення 601 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
331+ | 35.25 грн |
332+ | 35.14 грн |
397+ | 29.38 грн |
402+ | 27.96 грн |
516+ | 20.16 грн |
2SC6097-TL-E |
Виробник: onsemi
Description: TRANS NPN 60V 3A TP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 3A TP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 14728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.5 грн |
10+ | 37.72 грн |
100+ | 26.1 грн |
2SC6097-TL-E |
Виробник: onsemi
Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
на замовлення 1366 шт:
термін постачання 77-86 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 50.6 грн |
10+ | 43.15 грн |
100+ | 27.01 грн |
700+ | 22.94 грн |
1400+ | 18.93 грн |
2100+ | 17.94 грн |
4900+ | 17.88 грн |
2SC6098-E |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 2.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
на замовлення 14500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
952+ | 21.01 грн |
2SC6098-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6098-E - 2SC6098-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC6098-E - 2SC6098-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 14500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 24.18 грн |
2SC6098-TL-E |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 2.5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
на замовлення 8409 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
876+ | 22.32 грн |
2SC6099-E |
Виробник: onsemi
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 17.72 грн |
2SC6099-E |
Виробник: ONSEMI
Description: ONSEMI - 2SC6099-E - 2SC6099-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC6099-E - 2SC6099-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 24.62 грн |
2SC6099-TL-E |
Виробник: onsemi
Description: TRANS NPN 100V 2A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 2A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
700+ | 27.23 грн |
2SC6099-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R
на замовлення 1 шт:
термін постачання 21-31 дні (днів)2SC6099-TL-E |
Виробник: onsemi
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.74 грн |
10+ | 45.32 грн |
100+ | 31.39 грн |
2SC6099-TL-E |
Виробник: onsemi
Bipolar Transistors - BJT BIP NPN 2A 100V
Bipolar Transistors - BJT BIP NPN 2A 100V
на замовлення 674 шт:
термін постачання 91-100 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.21 грн |
10+ | 50.41 грн |
100+ | 30.36 грн |
700+ | 25.3 грн |
1400+ | 21.56 грн |
2100+ | 19.19 грн |
4900+ | 18.14 грн |
2SC6090 (транзистор біполярный NPN) Код товару: 34462 |
Виробник: Sanyo
Транзистори > Біполярні NPN
Корпус: TO-220F
Uceo,V: 700 V
Ucbo,V: 1500 V
Ic,A: 10 A
h21: 15
Транзистори > Біполярні NPN
Корпус: TO-220F
Uceo,V: 700 V
Ucbo,V: 1500 V
Ic,A: 10 A
h21: 15
товар відсутній
2SC6094-TD-E |
Виробник: onsemi
Description: TRANS NPN 60V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS NPN 60V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товар відсутній
2SC6094-TD-E |
Виробник: onsemi
Description: TRANS NPN 60V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS NPN 60V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товар відсутній
2SC6094-TD-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT NPN 60V 3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
товар відсутній
2SC6095-TD-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 80V 2.5A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT NPN 80V 2.5A 1300mW 4-Pin(3+Tab) SOT-89 T/R
товар відсутній
2SC6095-TD-E |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Description: TRANS NPN 80V 2.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
товар відсутній
2SC6095-TD-E |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Description: TRANS NPN 80V 2.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
товар відсутній
2SC6096-TD-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
товар відсутній
2SC6096-TD-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
товар відсутній
2SC6096-TD-H |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT NPN 100V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
товар відсутній
2SC6096-TD-H |
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
товар відсутній
2SC6096-TD-H |
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
Description: TRANS NPN 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
товар відсутній
2SC6097-E |
Виробник: onsemi
Description: TRANS NPN 60V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
2SC6097-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 800mW 3-Pin(3+Tab) TP Bag
Trans GP BJT NPN 60V 3A 800mW 3-Pin(3+Tab) TP Bag
товар відсутній
2SC6097-TL-E |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
товар відсутній
2SC6097-TL-E |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
кількість в упаковці: 1 шт
товар відсутній
2SC6097-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
товар відсутній
2SC6097-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 60V 3A 800mW 3-Pin(2+Tab) DPAK T/R
товар відсутній
2SC6098-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 80V 2.5A 800mW 3-Pin(3+Tab) TP Bag
Trans GP BJT NPN 80V 2.5A 800mW 3-Pin(3+Tab) TP Bag
товар відсутній
2SC6098-E |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 2.5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
2SC6098-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 80V 2.5A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 80V 2.5A 800mW 3-Pin(2+Tab) DPAK T/R
товар відсутній
2SC6098-TL-E |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 2.5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товар відсутній
2SC6099-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 800mW 3-Pin(3+Tab) TP Bag
Trans GP BJT NPN 100V 2A 800mW 3-Pin(3+Tab) TP Bag
товар відсутній
2SC6099-E |
Виробник: onsemi
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товар відсутній
2SC6099-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R
товар відсутній
2SC6099-TL-E |
Виробник: ON Semiconductor
Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R
товар відсутній
NTE237 |
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 60V; 2A; 10W; TO39; Pout: 3.5W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 10W
Case: TO39
Mounting: THT
Frequency: 27MHz
Output power: 3.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 60V; 2A; 10W; TO39; Pout: 3.5W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 10W
Case: TO39
Mounting: THT
Frequency: 27MHz
Output power: 3.5W
товар відсутній
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