Результат пошуку "4dnf60" : 13
Вид перегляду :
Мінімальне замовлення: 8
Мінімальне замовлення: 5
Мінімальне замовлення: 2500
Мінімальне замовлення: 2500
Мінімальне замовлення: 2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| 4DNF60L |
на замовлення 500 шт: термін постачання 14-28 дні (днів) |
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STS4DNF60L | STMicroelectronics |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8 Type of transistor: N-MOSFET x2 Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2388 шт: термін постачання 21-30 дні (днів) |
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STS4DNF60L | STMicroelectronics |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8 Type of transistor: N-MOSFET x2 Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2388 шт: термін постачання 7-14 дні (днів) |
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STS4DNF60L | STMicroelectronics |
Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STS4DNF60L | STMicroelectronics |
Description: MOSFET 2N-CH 60V 4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STS4DNF60L | STMicroelectronics |
Description: MOSFET 2N-CH 60V 4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 10591 шт: термін постачання 21-31 дні (днів) |
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| S4DNF60L | ST | 01+ SOP |
на замовлення 2188 шт: термін постачання 14-28 дні (днів) |
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| S4DNF60L | ST | SOP-8 |
на замовлення 8700 шт: термін постачання 14-28 дні (днів) |
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STS4DNF60(транзистор) Код товару: 52817 |
Різні комплектуючі > Різні комплектуючі 2 |
товар відсутній
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STS4DNF60 | STMicroelectronics |
Description: MOSFET 2N-CH 60V 4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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STS4DNF60 | STMicroelectronics |
Description: MOSFET 2N-CH 60V 4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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| STS4DNF60L | STMicroelectronics |
Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R |
товар відсутній |
| STS4DNF60L |
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Виробник: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.48 грн |
| 10+ | 37.06 грн |
| 25+ | 32.67 грн |
| 29+ | 28.28 грн |
| 78+ | 26.77 грн |
| STS4DNF60L |
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Виробник: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2388 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.97 грн |
| 6+ | 46.18 грн |
| 25+ | 39.2 грн |
| 29+ | 33.93 грн |
| 78+ | 32.12 грн |
| 2500+ | 31.71 грн |
| STS4DNF60L |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R
Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.97 грн |
| STS4DNF60L |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 65.75 грн |
| 5000+ | 60.94 грн |
| STS4DNF60L |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 10591 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 146.1 грн |
| 10+ | 116.67 грн |
| 100+ | 92.84 грн |
| 500+ | 73.72 грн |
| 1000+ | 62.55 грн |
| STS4DNF60 |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| STS4DNF60 |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній