Результат пошуку "60n100" : 36
Вид перегляду :
Мінімальне замовлення: 800
Мінімальне замовлення: 3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDB0260N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V |
на замовлення 1314 шт: термін постачання 21-31 дні (днів) |
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FDB0260N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FDBL0260N100 | onsemi |
Description: MOSFET N-CH 100V 200A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V |
на замовлення 1940 шт: термін постачання 21-31 дні (днів) |
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FGL60N100BNTD; NPT Trench IGBT+диод; 60A 1000V 180W; Корпус: TO-264-3L; ON Semi. |
на замовлення 4 шт: термін постачання 2-3 дні (днів) |
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DDB6U160N100K | EUPEC | O348 J4-1 |
на замовлення 19 шт: термін постачання 14-28 дні (днів) |
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DDB6U60N100 | EUPEC |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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FGL60N100D | fsc | 8 |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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G60N100BNTD | FAIRCHIL | 09+ QFP |
на замовлення 900 шт: термін постачання 14-28 дні (днів) |
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TT60N1000KOF | AEG | 05+ |
на замовлення 470 шт: термін постачання 14-28 дні (днів) |
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FGL60N100BNTD Код товару: 54348 |
Fairchild |
Транзистори > IGBT Корпус: TO-264 Vces: 1000 V Vce: 2,5 V Ic 25: 60 A Ic 100: 42 A Pd 25: 180 W td(on)/td(off) 100-150 град: 140/630 |
товар відсутній
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G60N100BNTD Код товару: 101158 |
Транзистори > IGBT |
товар відсутній
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10018960-N1000AULF | Amphenol ICC (FCI) |
Description: CABLE ASSY EYEMAX Packaging: Bulk Connector Type: Plug to Plug Gender: Male to Male Color: Black Length: 32.81' (10.00m) Shielding: Shielded Number of Positions: 16 Cable Type: Round Usage: External Fastening Type: Thumbscrews Cable Connectors: Infiniband 4x Part Status: Active |
товар відсутній |
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DAMH560N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 460A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
товар відсутній |
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DAMH560N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 460A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw кількість в упаковці: 1 шт |
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DAMI160N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 120A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4mΩ Pulsed drain current: 640A Power dissipation: 380W Gate-source voltage: -20...20V Mechanical mounting: screw |
товар відсутній |
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DAMI160N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 120A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4mΩ Pulsed drain current: 640A Power dissipation: 380W Gate-source voltage: -20...20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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DAMI560N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 445A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 1.1mΩ Pulsed drain current: 1.6kA Power dissipation: 890W Gate-source voltage: -20...20V Mechanical mounting: screw |
товар відсутній |
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DAMI560N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 445A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 1.1mΩ Pulsed drain current: 1.6kA Power dissipation: 890W Gate-source voltage: -20...20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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DAMIA960N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 720A Case: SOT227H Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
товар відсутній |
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DAMIA960N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 720A Case: SOT227H Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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FDB0260N1007L | ON Semiconductor | Trans MOSFET N-CH 100V 200A 7-Pin(6+Tab) D2PAK T/R |
товар відсутній |
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FDBL0260N100 | ON Semiconductor | Trans MOSFET N-CH 100V 200A 9-Pin(8+Tab) TO-LL T/R |
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FDBL0260N100 | onsemi |
Description: MOSFET N-CH 100V 200A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V |
товар відсутній |
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FGL60N100BNTD | onsemi |
Description: IGBT 1000V 60A 180W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.2 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: NPT and Trench Td (on/off) @ 25°C: 140ns/630ns Test Condition: 600V, 60A, 51Ohm, 15V Gate Charge: 275 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
товар відсутній |
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FGL60N100BNTD | ON Semiconductor | Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
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FGL60N100BNTDTU | onsemi |
Description: IGBT 1000V 60A 180W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.2 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: NPT and Trench Td (on/off) @ 25°C: 140ns/630ns Test Condition: 600V, 60A, 51Ohm, 15V Gate Charge: 275 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
товар відсутній |
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FGL60N100BNTDTU | ON Semiconductor | Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
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FGL60N100DTU | onsemi |
Description: IGBT 1000V 60A 176W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 230 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 176 W |
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TSG60N100CE C0G | Taiwan Semiconductor | TSG60N100CE C0G |
товар відсутній |
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GKS-113 287 260 N 1002 | INGUN | GKS-113-0929 Contact Probes |
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GKS-113 287 260 N 1002 M | INGUN | GKS-113-0525 Contact Probes |
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IB054Q120T60N1-CB | Vicor Corporation |
Description: IB054Q120T60N1-00 Packaging: Bag Part Status: Active |
товар відсутній |
FDB0260N1007L |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
на замовлення 1314 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 640.03 грн |
10+ | 527.89 грн |
100+ | 439.9 грн |
FDB0260N1007L |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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800+ | 403.07 грн |
FDBL0260N100 |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 391.01 грн |
10+ | 315.65 грн |
100+ | 255.36 грн |
500+ | 213.02 грн |
1000+ | 182.4 грн |
FGL60N100BNTD; NPT Trench IGBT+диод; 60A 1000V 180W; Корпус: TO-264-3L; ON Semi. |
на замовлення 4 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
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3+ | 288.09 грн |
FGL60N100BNTD Код товару: 54348 |
Виробник: Fairchild
Транзистори > IGBT
Корпус: TO-264
Vces: 1000 V
Vce: 2,5 V
Ic 25: 60 A
Ic 100: 42 A
Pd 25: 180 W
td(on)/td(off) 100-150 град: 140/630
Транзистори > IGBT
Корпус: TO-264
Vces: 1000 V
Vce: 2,5 V
Ic 25: 60 A
Ic 100: 42 A
Pd 25: 180 W
td(on)/td(off) 100-150 град: 140/630
товар відсутній
10018960-N1000AULF |
Виробник: Amphenol ICC (FCI)
Description: CABLE ASSY EYEMAX
Packaging: Bulk
Connector Type: Plug to Plug
Gender: Male to Male
Color: Black
Length: 32.81' (10.00m)
Shielding: Shielded
Number of Positions: 16
Cable Type: Round
Usage: External
Fastening Type: Thumbscrews
Cable Connectors: Infiniband 4x
Part Status: Active
Description: CABLE ASSY EYEMAX
Packaging: Bulk
Connector Type: Plug to Plug
Gender: Male to Male
Color: Black
Length: 32.81' (10.00m)
Shielding: Shielded
Number of Positions: 16
Cable Type: Round
Usage: External
Fastening Type: Thumbscrews
Cable Connectors: Infiniband 4x
Part Status: Active
товар відсутній
DAMH560N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
товар відсутній
DAMH560N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMI160N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
товар відсутній
DAMI160N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMI560N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.1mΩ
Pulsed drain current: 1.6kA
Power dissipation: 890W
Gate-source voltage: -20...20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.1mΩ
Pulsed drain current: 1.6kA
Power dissipation: 890W
Gate-source voltage: -20...20V
Mechanical mounting: screw
товар відсутній
DAMI560N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.1mΩ
Pulsed drain current: 1.6kA
Power dissipation: 890W
Gate-source voltage: -20...20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.1mΩ
Pulsed drain current: 1.6kA
Power dissipation: 890W
Gate-source voltage: -20...20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMIA960N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
товар відсутній
DAMIA960N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
FDB0260N1007L |
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 200A 7-Pin(6+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 200A 7-Pin(6+Tab) D2PAK T/R
товар відсутній
FDBL0260N100 |
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 200A 9-Pin(8+Tab) TO-LL T/R
Trans MOSFET N-CH 100V 200A 9-Pin(8+Tab) TO-LL T/R
товар відсутній
FDBL0260N100 |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
товар відсутній
FGL60N100BNTD |
Виробник: onsemi
Description: IGBT 1000V 60A 180W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT 1000V 60A 180W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
FGL60N100BNTD |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
товар відсутній
FGL60N100BNTDTU |
Виробник: onsemi
Description: IGBT 1000V 60A 180W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT 1000V 60A 180W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
FGL60N100BNTDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
товар відсутній
FGL60N100DTU |
Виробник: onsemi
Description: IGBT 1000V 60A 176W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
Description: IGBT 1000V 60A 176W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
товар відсутній
IB054Q120T60N1-CB |
товар відсутній