Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 12.5W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 12.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced

Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 12.5W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 12.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V

Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 13A 8-Pin DFN EP T/R

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V

Виробник: ALPHA&OMEGA
Transistor N-Channel MOSFET; 30V; 20V; 11,4mOhm; 30A; 31W; -55°C ~ 150°C; AON6414A TAON6414a
кількість в упаковці: 50 шт

Виробник: EPCOS - TDK Electronics
Description: COVER PLATE EFD 15 X 8 X 5
Packaging: Box
Accessory Type: Cover Plate
Part Status: Active

Виробник: onsemi
Description: MOSFET N-CH 100V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: AOS
0911+ DFN8

Виробник: ST
642+

Виробник: ST

Виробник: ST
09+

Виробник: Cornell Dubilier Electronics (CDE)
Description: CAP ALUM 220UF 20% 100V SMD
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: Radial, Can - SMD
Size / Dimension: 0.709" Dia (18.00mm)
Polarization: Polar
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 105°C
Applications: Automotive, Bypass, Decoupling
Ratings: AEC-Q200
ESR (Equivalent Series Resistance): 150mOhm @ 100kHz
Lifetime @ Temp.: 5000 Hrs @ 105°C
Surface Mount Land Size: 0.748" L x 0.827" W (19.00mm x 21.00mm)
Height - Seated (Max): 0.669" (17.00mm)
Part Status: Active
Capacitance: 220 µF
Voltage - Rated: 100 V
Impedance: 150 mOhms
Ripple Current @ Low Frequency: 687.8 mA @ 120 Hz
Ripple Current @ High Frequency: 917 mA @ 100 kHz

Виробник: Cornell Dubilier Electronics (CDE)
Description: CAP ALUM 220UF 20% 100V SMD
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: Radial, Can - SMD
Size / Dimension: 0.709" Dia (18.00mm)
Polarization: Polar
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 105°C
Applications: Automotive, Bypass, Decoupling
Ratings: AEC-Q200
ESR (Equivalent Series Resistance): 150mOhm @ 100kHz
Lifetime @ Temp.: 5000 Hrs @ 105°C
Surface Mount Land Size: 0.748" L x 0.827" W (19.00mm x 21.00mm)
Height - Seated (Max): 0.669" (17.00mm)
Part Status: Active
Capacitance: 220 µF
Voltage - Rated: 100 V
Impedance: 150 mOhms
Ripple Current @ Low Frequency: 687.8 mA @ 120 Hz
Ripple Current @ High Frequency: 917 mA @ 100 kHz

Виробник: EPCOS - TDK Electronics
Description: CAP FILM 2.2UF 20% 630VDC RADIAL
Packaging: Bulk
Tolerance: ±20%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 110°C
Applications: EMI, RFI Suppression
Lead Spacing: 0.886" (22.50mm)
Termination: PC Pins
Ratings: X2
Dielectric Material: Polypropylene (PP)
Voltage Rating - AC: 305V
Voltage Rating - DC: 630V
Height - Seated (Max): 1.161" (29.50mm)
Part Status: Active
Capacitance: 2.2 µF
Size / Dimension: 1.043" L x 0.571" W (26.50mm x 14.50mm)

Транзистори > Польові N-канальні

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V

Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 50A 8-Pin DFN EP

Виробник: TDK ELECTRONICS
Ferrite Accessories Cover Plate

Виробник: GCT
Description: 14W, 1.27MM PITCH SOCKET, DIL, S
Packaging: Tube
Connector Type: Receptacle
Voltage Rating: 30VAC/DC
Current Rating (Amps): 1A per Contact
Mounting Type: Surface Mount
Number of Positions: 14
Style: Board to Board
Operating Temperature: -40°C ~ 105°C
Contact Type: Female Socket
Fastening Type: Push-Pull
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Insulation Color: Black
Pitch - Mating: 0.050" (1.27mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: FLASH
Contact Finish - Post: Gold
Insulation Height: 0.181" (4.60mm)
Row Spacing - Mating: 0.050" (1.27mm)
Number of Rows: 2

Виробник: RAF Electronic Hardware
Description: METRIC ROUND SPACERPLAIN ALUMINU
Packaging: Bulk
Gender: Female, Female
Material: Aluminum
Type: Round Spacer
Length - Overall: 1.378" (35.00mm)
Between Board Height: 0.594" (15.08mm)
Diameter - Outside: 0.748" (19.00mm)
Diameter - Inside: 0.591" (15.00mm)
Threaded/Unthreaded: Unthreaded
Screw, Thread Size: M14

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) IPAK Tube

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) IPAK Tube

Виробник: onsemi
Description: MOSFET N-CH 100V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced

Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 32A 3-Pin(2+Tab) DPAK T/R

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 32A Automotive 3-Pin(2+Tab) DPAK T/R

Виробник: onsemi
Description: MOSFET N-CH 100V 34A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Виробник: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R

Виробник: STMicroelectronics
Audio/Video Switch 64-Pin LQFP Tray

Виробник: Panasonic Electronic Components
Description: RES SMD 39K OHM 0.1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±0.1%
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Metal Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.024" (0.60mm)
Resistance: 39 kOhms

Виробник: Panasonic Electronic Components
Description: RES SMD 39K OHM 0.1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±0.1%
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Metal Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.024" (0.60mm)
Resistance: 39 kOhms