Результат пошуку "85EPF" : 8
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
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| 85EPF12 | IR | 04+ QFP |
на замовлення 20 шт: термін постачання 14-28 дні (днів) |
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VS-85EPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 85A POWIRTAB Packaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 375 шт: термін постачання 21-31 дні (днів) |
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VS-85EPF12 | Vishay Semiconductors | Rectifiers 160 Amp 1200 Volt 95 ns |
на замовлення 320 шт: термін постачання 21-30 дні (днів) |
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VS-85EPF12 Код товару: 38120 |
Діоди, діодні мости, стабілітрони > Діоди супершвидкі |
товар відсутній
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85EPF04 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 400V 85A POWIRTABPackaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товар відсутній |
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VS-85EPF12 | Vishay |
Rectifier Diode Switching 1.2KV 85A 480ns 2-Pin(1+Tab) Power Tab |
товар відсутній |
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VS-85EPF12-M4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 85A POWIRTAB Packaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowerTab® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
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VS-85EPF12HE4 | Vishay |
Description: NEW INPUT DIODES - POWIRTAB Packaging: Strip Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowerTab® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
| VS-85EPF12 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 735.08 грн |
| 25+ | 573.07 грн |
| 100+ | 539.37 грн |
| VS-85EPF12 |
Виробник: Vishay Semiconductors
Rectifiers 160 Amp 1200 Volt 95 ns
Rectifiers 160 Amp 1200 Volt 95 ns
на замовлення 320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 798.93 грн |
| 10+ | 724.03 грн |
| 25+ | 554.67 грн |
| 100+ | 521.81 грн |
| 250+ | 505.38 грн |
| 375+ | 472.52 грн |
| 1125+ | 433.09 грн |
| 85EPF04 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
| VS-85EPF12 |
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Виробник: Vishay
Rectifier Diode Switching 1.2KV 85A 480ns 2-Pin(1+Tab) Power Tab
Rectifier Diode Switching 1.2KV 85A 480ns 2-Pin(1+Tab) Power Tab
товар відсутній
| VS-85EPF12-M4 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| VS-85EPF12HE4 |
Виробник: Vishay
Description: NEW INPUT DIODES - POWIRTAB
Packaging: Strip
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: NEW INPUT DIODES - POWIRTAB
Packaging: Strip
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній