Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.7A; 178W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.7A
Power dissipation: 178W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 13.1nC
Kind of channel: enhanced

Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.7A; 178W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.7A
Power dissipation: 178W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 13.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V

Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V

Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhanced

Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: TTM Technologies, Inc.
Description: BALUN 2.2GHZ-3.9GHZ 50/50 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 2.2GHz ~ 3.9GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Return Loss (Min): 8dB
Phase Difference: 3.4°
Part Status: Active

Виробник: Anaren
Signal Conditioning

Виробник: TTM Technologies, Inc.
Description: BALUN 4.8GHZ-5.9GHZ 50/100 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 4.8GHz ~ 5.9GHz
Impedance - Unbalanced/Balanced: 50 / 100Ohm
Insertion Loss (Max): 0.6dB
Return Loss (Min): 15dB
Phase Difference: 3°
Part Status: Active

Виробник: Anaren
Signal Conditioning 4.8-5.9GHz 50/100 Ohm IL=.6dB

Виробник: TTM Technologies, Inc.
Description: BALUN 4.8GHZ-5.9GHZ 50/100 0404
Packaging: Tape & Reel (TR)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 4.8GHz ~ 5.9GHz
Impedance - Unbalanced/Balanced: 50 / 100Ohm
Insertion Loss (Max): 0.6dB
Return Loss (Min): 15dB
Phase Difference: 3°
Part Status: Active

Виробник: TTM Technologies, Inc.
Description: BALUN 4.8GHZ-5.9GHZ 50/150 0404
Packaging: Tape & Reel (TR)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 4.8GHz ~ 5.9GHz
Impedance - Unbalanced/Balanced: 50 / 150Ohm
Insertion Loss (Max): 0.4dB
Return Loss (Min): 17dB
Phase Difference: 4°
Part Status: Active

Виробник: TTM Technologies, Inc.
Description: BALUN 4.8GHZ-5.9GHZ 50/150 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 4.8GHz ~ 5.9GHz
Impedance - Unbalanced/Balanced: 50 / 150Ohm
Insertion Loss (Max): 0.4dB
Return Loss (Min): 17dB
Phase Difference: 4°
Part Status: Active

Виробник: TTM Technologies, Inc.
Description: BALUN 4.8GHZ-5.9GHZ 50/50 0404
Packaging: Tape & Reel (TR)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 4.8GHz ~ 5.9GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.7dB
Return Loss (Min): 16dB
Phase Difference: 3°
Part Status: Active

Виробник: TTM Technologies, Inc.
Description: BALUN 4.8GHZ-5.9GHZ 50/50 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 4.8GHz ~ 5.9GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.7dB
Return Loss (Min): 16dB
Phase Difference: 3°
Part Status: Active

Виробник: Anaren
Signal Conditioning 4.8+5.9GHz 50 Ohm IL=.7dB

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V
Packaging: Bulk
Part Status: Active

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 3.6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V

Виробник: ON-Semicoductor
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220AB FQPF9N50CF TFQPF9n50cf
кількість в упаковці: 10 шт

Виробник: ON-Semicoductor
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220AB FQPF9N50CF TFQPF9n50cf
кількість в упаковці: 10 шт

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 500V 5.3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V

Виробник: Omnetics
Description: CABLE ASSY D - MIC D 9P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 9
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active

Виробник: Mallory Sonalert Products Inc.
Description: 2.5-505DC 77-84DB 5000HZ CONT 10
Packaging: Bulk
Size / Dimension: 0.413" Dia (10.50mm)
Mounting Type: Through Hole
Frequency: 5kHz
Operating Temperature: -20°C ~ 100°C
Sound Pressure Level (SPL): 80dB @ 5V, 10cm
Current - Supply: 3mA
Input Type: DC
Operating Mode: Single Tone
Voltage Range: 2.5 ~ 5.5V
Technology: Piezo
Termination: PC Pins
Port Location: Top
Driver Circuitry: Indicator, Internally Driven
Height - Seated (Max): 0.224" (5.70mm)
Voltage - Rated: 5 V

Виробник: Mallory Sonalert
Piezo Buzzers & Audio Indicators 2.5-505DC 77-84DB 5000HZ CONT 10X5

Виробник: Diodes Incorporated
Description: TRANS 2NPN 50V 1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26

Виробник: Diodes Incorporated
Bipolar Transistors - BJT 50V Dual NPN Low Sat 1A 7V Vebo

Виробник: Diodes Incorporated
Description: TRANS 2NPN 50V 1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26

Виробник: Diodes Incorporated
Bipolar Transistors - BJT Dual 50V NPN

Виробник: Diodes Incorporated
Description: TRANS 2NPN 50V 1A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active

Виробник: Diodes Incorporated
Description: TRANS 2NPN 50V 1A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Part Status: Active

Виробник: FSC

Виробник: fairchild
to-263/d2-pak

Виробник: FAIRCHILD
07+ SOT-263

Виробник: FAIRCHILD
SOT-263

Виробник: FAIRCHILD
TO-263

Виробник: Fairchild

Виробник: fairchild
to-263/d2-pak

Виробник: FAIRCHILD
07+ SOT-263

Виробник: FARICHILD

Виробник: FAIRCHILD
SOT-263

Виробник: FAIRCHILD
TO-263

Виробник: fairchild
to-263/d2-pak

Виробник: fairchild
07+ to-263/d2-pak

Виробник: FAIRCHIL..

Виробник: FAIRCHILD

Виробник: ON Semiconductor

Виробник: Fairchild

Виробник: FAIRCHILD
2004 TO-220

Виробник: FSC
08+;