Виробник: EIC Semiconductor
Rectifier Bridge Diode Single 600V 50A 4-Pin BR-50

Виробник: EIC Semiconductor
Rectifier Bridge Diode Single 600V 50A 4-Pin BR-50

Виробник: EIC Semiconductor
SILICON BRIDGE RECTIFIERS 4BR50W

Виробник: Ohmite
Wirewound Resistors - Chassis Mount Metal Clad Braking Resistor 500W 5 68Ohms

Виробник: Ohmite
Description: METAL CLAD BRAKING RESISTOR 500W
Power (Watts): 500W
Tolerance: ±5%
Packaging: Box
Temperature Coefficient: ±200ppm/°C
Mounting Type: Screw Mount
Composition: Wirewound
Type: Bleeder, Capacitor
Operating Temperature: -25°C ~ 250°C
Resistance: 68 Ohms

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V

Виробник: NTE Electronics
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 50A; Ifsm: 450A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 50A
Max. forward impulse current: 0.45kA
Version: square
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk