Результат пошуку "BS107A" : 15
Вид перегляду :
Мінімальне замовлення: 10
Мінімальне замовлення: 30
,TO-226_straightlead.jpg "BS107AG")
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| BS107A; 250mA; 200V; 350mW; N-MOSFET; Корпус: TO-92; ON Semi. |
на замовлення 1 шт: термін постачання 2-3 дні (днів) |
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| BS107ARL1G | ON Semiconductor |
  N-канальний ПТ; Udss, В = 200; Id = 250 мА; Ciss, пФ @ Uds, В = 60 @ 25; Rds = 6,4 Ом @ 250 мA, 10 В; Ugs(th) = 3 В @ 1 мА; Р, Вт = 0,35 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-92-3 |
на замовлення 542 шт: термін постачання 2-3 дні (днів) |
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| BS107AG | ON |
05+06+ |
на замовлення 22000 шт: термін постачання 14-28 дні (днів) |
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| BS107AR21 | ON | 418 |
на замовлення 3040 шт: термін постачання 14-28 дні (днів) |
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| BS107P | DIODES/ZETEX |
N-MOSFET 250mA 200V 350mW *obsolete; LTB:08.05.2015 ; LTS:31.12.2015 ;BS107AG, BS107ARL1G ; BS107P BS107P TBS107 кількість в упаковці: 10 шт |
на замовлення 390 шт: термін постачання 28-31 дні (днів) |
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BS107A Код товару: 22482 |
Транзистори > Польові N-канальні |
товар відсутній
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BS107A | onsemi |
MOSFET 200V 250mA |
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BS107AG | onsemi |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
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BS107AG | onsemi |
MOSFET 200V 250mA N-Channel |
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BS107AG | ON Semiconductor |
Trans MOSFET N-CH 200V 0.25A 3-Pin TO-92 Box |
товар відсутній |
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BS107ARL1 | ON Semiconductor |
Trans MOSFET N-CH 200V 0.25A 3-Pin TO-92 T/R |
товар відсутній |
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BS107ARL1 | onsemi |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
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BS107ARL1G | ON Semiconductor |
Trans MOSFET N-CH 200V 0.25A 3-Pin TO-92 T/R |
товар відсутній |
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BS107ARL1G | onsemi |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
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BS107ARL1G | onsemi |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
| BS107A; 250mA; 200V; 350mW; N-MOSFET; Корпус: TO-92; ON Semi. |
на замовлення 1 шт:
термін постачання 2-3 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 663.6 грн |
| BS107ARL1G | |
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Виробник: ON Semiconductor
N-канальний ПТ; Udss, В = 200; Id = 250 мА; Ciss, пФ @ Uds, В = 60 @ 25; Rds = 6,4 Ом @ 250 мA, 10 В; Ugs(th) = 3 В @ 1 мА; Р, Вт = 0,35 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-92-3
N-канальний ПТ; Udss, В = 200; Id = 250 мА; Ciss, пФ @ Uds, В = 60 @ 25; Rds = 6,4 Ом @ 250 мA, 10 В; Ugs(th) = 3 В @ 1 мА; Р, Вт = 0,35 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-92-3
на замовлення 542 шт:
термін постачання 2-3 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 63.49 грн |
| 11+ | 59.26 грн |
| 100+ | 55.04 грн |
| BS107P |
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Виробник: DIODES/ZETEX
N-MOSFET 250mA 200V 350mW *obsolete; LTB:08.05.2015 ; LTS:31.12.2015 ;BS107AG, BS107ARL1G ; BS107P BS107P TBS107
кількість в упаковці: 10 шт
N-MOSFET 250mA 200V 350mW *obsolete; LTB:08.05.2015 ; LTS:31.12.2015 ;BS107AG, BS107ARL1G ; BS107P BS107P TBS107
кількість в упаковці: 10 шт
на замовлення 390 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 23.99 грн |
| BS107AG |
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Виробник: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
| BS107ARL1 |
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Виробник: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
| BS107ARL1G | |
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Виробник: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
| BS107ARL1G | |
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Виробник: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній