Результат пошуку "DE475" : 11
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
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IXFZ520N075T2 | IXYS |
 MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET |
на замовлення 300 шт: термін постачання 336-345 дні (днів) |
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DE475-102N21A Код товару: 163384 |
Транзистори > Польові N-канальні |
товар відсутній
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| DE475-102N20A | Littelfuse |
RF Power MOSFET |
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DE475-102N21A | Littelfuse |
Trans RF FET N-CH 1000V 24A 6-Pin |
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DE475-501N44A | Littelfuse |
Trans MOSFET N-CH 500V 48A 6-Pin |
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DVRFD631-150/275 | Littelfuse |
DE375/DE475 MOSFET Development Board |
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| IXFZ140N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 445W Case: DE475 On-state resistance: 17mΩ Mounting: SMD Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFZ140N25T | IXYS |
MOSFET DiscMSFT NChTrenchGate-Gen1 DE475 |
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| IXFZ520N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 420A Power dissipation: 600W Case: DE475 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 545nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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| IXTZ550N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 600W Case: DE475 On-state resistance: 1mΩ Mounting: SMD Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
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IXTZ550N055T2 | IXYS |
MOSFET 550Amps 55V |
товар відсутній |
| IXFZ520N075T2 |
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Виробник: IXYS
MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET
MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET
на замовлення 300 шт:
термін постачання 336-345 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3156.88 грн |
| 10+ | 2902.67 грн |
| IXFZ140N25T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFZ520N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXTZ550N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній