Результат пошуку "EPC2034" : 8
Вид перегляду :
Мінімальне замовлення: 500
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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EPC2034C | EPC |
Description: GANFET N-CH 200V 48A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 23500 шт: термін постачання 21-31 дні (днів) |
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EPC2034C | EPC |
Description: GANFET N-CH 200V 48A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 24393 шт: термін постачання 21-31 дні (днів) |
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EPC9048C | EPC |
Description: DEV BRD EPC2034C 200V EGAN FET Packaging: Bulk Type: Power Management Utilized IC / Part: EPC2034C Supplied Contents: Board(s) |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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EPC9150 | EPC |
Description: DEMO LIDAR 200V PULSE EPC2034C Packaging: Box Type: Power Management Utilized IC / Part: EPC2034C Supplied Contents: Board(s) Part Status: Active |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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EPC2034 | EPC |
Description: GANFET N-CH 200V 48A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товар відсутній |
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EPC2034 | EPC |
Description: GANFET N-CH 200V 48A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товар відсутній |
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ZPEP-C20-342PN | Amphenol Energy Technologies | Circular MIL Spec Connector |
товар відсутній |
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EPC9048 | EPC |
Description: BOARD DEV FOR EPC2034 Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Utilized IC / Part: EPC2034 Supplied Contents: Board(s) Primary Attributes: 160V, 12A Max Output GaNFET Capability Embedded: No |
товар відсутній |
EPC2034C |
Виробник: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 23500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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500+ | 392.42 грн |
1000+ | 340.09 грн |
EPC2034C |
Виробник: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 24393 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 622.26 грн |
10+ | 513.97 грн |
100+ | 428.26 грн |
EPC9048C |
Виробник: EPC
Description: DEV BRD EPC2034C 200V EGAN FET
Packaging: Bulk
Type: Power Management
Utilized IC / Part: EPC2034C
Supplied Contents: Board(s)
Description: DEV BRD EPC2034C 200V EGAN FET
Packaging: Bulk
Type: Power Management
Utilized IC / Part: EPC2034C
Supplied Contents: Board(s)
на замовлення 48 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 13455.54 грн |
EPC9150 |
Виробник: EPC
Description: DEMO LIDAR 200V PULSE EPC2034C
Packaging: Box
Type: Power Management
Utilized IC / Part: EPC2034C
Supplied Contents: Board(s)
Part Status: Active
Description: DEMO LIDAR 200V PULSE EPC2034C
Packaging: Box
Type: Power Management
Utilized IC / Part: EPC2034C
Supplied Contents: Board(s)
Part Status: Active
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 30275.32 грн |
EPC2034 |
Виробник: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
EPC2034 |
Виробник: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній