Результат пошуку "W20NB50" : 5
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| W20NB50 | ST |
на замовлення 4200 шт: термін постачання 14-28 дні (днів) |
|||||||||
|
|
NTE2970 | NTE Electronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13.4A; Idm: 88A; 278W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.4A Pulsed drain current: 88A Power dissipation: 278W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of channel: enhanced |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
|
||||||
|
W20NB50 Код товару: 104381 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||||||||
 |
STW20NB50 Код товару: 103431 |
Транзистори > Польові N-канальні |
товар відсутній
|
||||||||
|
|
STW20NB50 | STMicroelectronics |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
товар відсутній |
| NTE2970 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.4A; Idm: 88A; 278W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.4A
Pulsed drain current: 88A
Power dissipation: 278W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.4A; Idm: 88A; 278W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.4A
Pulsed drain current: 88A
Power dissipation: 278W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1106.43 грн |
| 2+ | 744.64 грн |
| 3+ | 703.46 грн |
| STW20NB50 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній