Результат пошуку "fgh6" : 48
Вид перегляду :
Мінімальне замовлення: 81
Мінімальне замовлення: 450
Мінімальне замовлення: 23
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 24
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FGH60N60SFDTU Код товару: 71883 |
FAIR/ON |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,5 V Ic 25: 120 A Ic 100: 60 A Pd 25: 378 W |
у наявності: 38 шт
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FGH60N60SMD Код товару: 60291 |
FAIR/ON |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 1,9 V Ic 25: 120 A Ic 100: 60 A Pd 25: 300 W td(on)/td(off) 100-150 град: 18/115 |
у наявності: 110 шт
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FGH60N60SFTU | Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
на замовлення 9888 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SFTU | ONSEMI |
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 9888 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 284nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 420 шт: термін постачання 21-30 дні (днів) |
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FGH60N60SMD | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SMD | onsemi / Fairchild | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 |
на замовлення 8719 шт: термін постачання 21-30 дні (днів) |
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FGH60N60SMD | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SMD | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SMD | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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FGH60N60SMD | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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FGH60N60UFDTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 298W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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FGH60T65SHD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/87ns Switching Energy: 1.69mJ (on), 630µJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 102 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 349 W |
на замовлення 889 шт: термін постачання 21-31 дні (днів) |
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FGH60T65SHD-F155 | onsemi / Fairchild | IGBT Transistors 650 V, 60 A Field Stop Trench IGBT |
на замовлення 370 шт: термін постачання 126-135 дні (днів) |
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FGH60T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20.8ns/102ns Switching Energy: 227µJ (on), 100µJ (off) Test Condition: 400V, 15A, 4.7Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 333 W |
на замовлення 382 шт: термін постачання 21-31 дні (днів) |
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FGH60T65SQD-F155 | ONSEMI |
Description: ONSEMI - FGH60T65SQD-F155 - IGBT, 120 A, 1.6 V, 333 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 120A |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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FGH60T65SQD-F155 | onsemi | IGBT Transistors 650V 60A FS4 TRENCH |
на замовлення 961 шт: термін постачання 161-170 дні (днів) |
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FGH60N60SFDTU | FGH60N60SFDTU Транзисторы IGB-transistors |
на замовлення 108 шт: термін постачання 2-3 дні (днів) |
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FGH60N60SFTU | fairchild | 2011+ |
на замовлення 24 шт: термін постачання 14-28 дні (днів) |
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FGH60N60UFDTU | fairchild | 2011+ |
на замовлення 32 шт: термін постачання 14-28 дні (днів) |
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Транзистор IGBT FGH60N60SFD 60A 600V TO-247 |
на замовлення 3 шт: термін постачання 3 дні (днів) |
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Транзистор IGBT FGH60N60SMD 60A 600V TO-247 |
на замовлення 7 шт: термін постачання 3 дні (днів) |
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FGH60T65 Код товару: 130492 |
Транзистори > IGBT |
товар відсутній
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FGH60T65SQD-F155 Код товару: 166613 |
Транзистори > IGBT |
товар відсутній
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FGH60N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
товар відсутній |
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FGH60N60SFDTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N60SFDTU-F085 | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 26ns/134ns Switching Energy: 1.97mJ (on), 570µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 188 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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FGH60N60SFDTU-F085 | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N60SFTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N60SFTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
товар відсутній |
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FGH60N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 284nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 420 шт: термін постачання 7-14 дні (днів) |
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FGH60N60SMD | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 39 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/104ns Switching Energy: 1.26mJ (on), 450µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 189 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W |
товар відсутній |
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FGH60N60SMD-F085 | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N60SMD-F085 | onsemi |
Description: IGBT 600V 120A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/116ns Switching Energy: 1.59mJ (on), 390µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 280 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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FGH60N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/130ns Switching Energy: 1.81mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 188 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W |
товар відсутній |
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FGH60N60UFDTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N60UFDTU | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N60UFDTU-F085 | onsemi |
Description: IGBT 600V 120A 298W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 29ns/138ns Switching Energy: 2.47mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 192 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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FGH60N60UFDTU-F085 | ON Semiconductor | Trans IGBT Chip N-CH 600V 120A 298000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60N6S2 | onsemi |
Description: IGBT 600V 75A 625W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 18ns/70ns Switching Energy: 400µJ (on), 310µJ (off) Test Condition: 390V, 40A, 3Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 320 A Power - Max: 625 W |
товар відсутній |
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FGH60T65SHD-F155 | ON Semiconductor | Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60T65SHD-F155 | ON Semiconductor | Trans IGBT Chip N-CH 650V 120A 349W 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60T65SQD-F155 | ON Semiconductor | Trans IGBT Chip N-CH 650V 120A 333000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60T65SQD-F155 | ON Semiconductor | Trans IGBT Chip N-CH 650V 120A 333W 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH60T65SQD-F155 | ON Semiconductor | Trans IGBT Chip N-CH 650V 120A 333W 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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12BFGH6B100 | Bussmann / Eaton | Specialty Fuses 12KV 100Amp 3" AIR FUSE |
товар відсутній |
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12BFGH6B100 | Eaton - Bussmann Electrical Division |
Description: FUSE CARTRIDGE 100A 12KVAC Package / Case: Cartridge, Non-Standard Fuse Type: Cartridge Current Rating (Amps): 100A Mounting Type: Requires Holder Voltage Rating - AC: 12 kVAC |
товар відсутній |
FGH60N60SFDTU Код товару: 71883 |
Виробник: FAIR/ON
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W
у наявності: 38 шт
Кількість | Ціна без ПДВ |
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1+ | 228 грн |
10+ | 211 грн |
FGH60N60SMD Код товару: 60291 |
Виробник: FAIR/ON
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 1,9 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 300 W
td(on)/td(off) 100-150 град: 18/115
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 1,9 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 300 W
td(on)/td(off) 100-150 град: 18/115
у наявності: 110 шт
Кількість | Ціна без ПДВ |
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1+ | 255 грн |
10+ | 239 грн |
FGH60N60SFTU |
Виробник: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
на замовлення 9888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
81+ | 243.54 грн |
FGH60N60SFTU |
Виробник: ONSEMI
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 9888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
450+ | 270.56 грн |
FGH60N60SMD |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 478.46 грн |
3+ | 306 грн |
8+ | 289.58 грн |
FGH60N60SMD |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 508.35 грн |
28+ | 416.22 грн |
100+ | 344.24 грн |
250+ | 315.07 грн |
450+ | 271.45 грн |
900+ | 241.13 грн |
FGH60N60SMD |
Виробник: onsemi / Fairchild
IGBT Transistors 600V/60A Field Stop IGBT ver. 2
IGBT Transistors 600V/60A Field Stop IGBT ver. 2
на замовлення 8719 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 464.63 грн |
25+ | 363.53 грн |
100+ | 270.76 грн |
450+ | 240.53 грн |
900+ | 208.99 грн |
FGH60N60SMD |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 214.68 грн |
FGH60N60SMD |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 489.75 грн |
10+ | 474.4 грн |
25+ | 388.42 грн |
100+ | 321.25 грн |
250+ | 294.03 грн |
450+ | 253.32 грн |
900+ | 225.03 грн |
FGH60N60SMD |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
на замовлення 360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 458.9 грн |
10+ | 444.51 грн |
25+ | 363.96 грн |
100+ | 301.02 грн |
250+ | 275.51 грн |
FGH60N60SMD |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247 Tube
на замовлення 360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 494.2 грн |
FGH60N60UFDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298W 3-Pin(3+Tab) TO-247 Tube
на замовлення 37 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 361.26 грн |
10+ | 334.08 грн |
30+ | 316.17 грн |
FGH60T65SHD-F155 |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
на замовлення 889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 329.86 грн |
30+ | 251.9 грн |
120+ | 215.93 грн |
510+ | 180.12 грн |
FGH60T65SHD-F155 |
Виробник: onsemi / Fairchild
IGBT Transistors 650 V, 60 A Field Stop Trench IGBT
IGBT Transistors 650 V, 60 A Field Stop Trench IGBT
на замовлення 370 шт:
термін постачання 126-135 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 358.83 грн |
10+ | 327.25 грн |
25+ | 243.82 грн |
100+ | 208.33 грн |
250+ | 205.04 грн |
450+ | 185.33 грн |
900+ | 164.3 грн |
FGH60T65SQD-F155 |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
на замовлення 382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 355.45 грн |
30+ | 271.41 грн |
120+ | 232.64 грн |
FGH60T65SQD-F155 |
Виробник: ONSEMI
Description: ONSEMI - FGH60T65SQD-F155 - IGBT, 120 A, 1.6 V, 333 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 120A
Description: ONSEMI - FGH60T65SQD-F155 - IGBT, 120 A, 1.6 V, 333 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 120A
на замовлення 597 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 426.86 грн |
5+ | 367.14 грн |
10+ | 306.69 грн |
50+ | 276.57 грн |
100+ | 247.71 грн |
250+ | 240.13 грн |
FGH60T65SQD-F155 |
Виробник: onsemi
IGBT Transistors 650V 60A FS4 TRENCH
IGBT Transistors 650V 60A FS4 TRENCH
на замовлення 961 шт:
термін постачання 161-170 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 386.43 грн |
10+ | 327.25 грн |
25+ | 262.88 грн |
100+ | 224.1 грн |
250+ | 212.27 грн |
450+ | 199.79 грн |
900+ | 161.01 грн |
FGH60N60SFDTU |
FGH60N60SFDTU Транзисторы IGB-transistors
на замовлення 108 шт:
термін постачання 2-3 дні (днів)Транзистор IGBT FGH60N60SFD 60A 600V TO-247 |
на замовлення 3 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 285.48 грн |
Транзистор IGBT FGH60N60SMD 60A 600V TO-247 |
на замовлення 7 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 246.34 грн |
FGH60N60SFDTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
товар відсутній
FGH60N60SFDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N60SFDTU-F085 |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FGH60N60SFDTU-F085 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N60SFTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N60SFTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
товар відсутній
FGH60N60SMD |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 420 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 574.16 грн |
3+ | 381.33 грн |
8+ | 347.49 грн |
FGH60N60SMD |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.26mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.26mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
товар відсутній
FGH60N60SMD-F085 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N60SMD-F085 |
Виробник: onsemi
Description: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/116ns
Switching Energy: 1.59mJ (on), 390µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 280 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/116ns
Switching Energy: 1.59mJ (on), 390µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 280 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FGH60N60UFDTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
товар відсутній
FGH60N60UFDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N60UFDTU |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N60UFDTU-F085 |
Виробник: onsemi
Description: IGBT 600V 120A 298W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/138ns
Switching Energy: 2.47mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 600V 120A 298W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/138ns
Switching Energy: 2.47mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FGH60N60UFDTU-F085 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 120A 298000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60N6S2 |
Виробник: onsemi
Description: IGBT 600V 75A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 18ns/70ns
Switching Energy: 400µJ (on), 310µJ (off)
Test Condition: 390V, 40A, 3Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 625 W
Description: IGBT 600V 75A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 18ns/70ns
Switching Energy: 400µJ (on), 310µJ (off)
Test Condition: 390V, 40A, 3Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 625 W
товар відсутній
FGH60T65SHD-F155 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60T65SHD-F155 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 349W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 349W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60T65SQD-F155 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 333000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 333000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60T65SQD-F155 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 333W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 333W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
FGH60T65SQD-F155 |
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 333W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 333W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
12BFGH6B100 |
Виробник: Eaton - Bussmann Electrical Division
Description: FUSE CARTRIDGE 100A 12KVAC
Package / Case: Cartridge, Non-Standard
Fuse Type: Cartridge
Current Rating (Amps): 100A
Mounting Type: Requires Holder
Voltage Rating - AC: 12 kVAC
Description: FUSE CARTRIDGE 100A 12KVAC
Package / Case: Cartridge, Non-Standard
Fuse Type: Cartridge
Current Rating (Amps): 100A
Mounting Type: Requires Holder
Voltage Rating - AC: 12 kVAC
товар відсутній