Результат пошуку "fqb25n33" : 14
Вид перегляду :
Мінімальне замовлення: 201
Мінімальне замовлення: 800
Мінімальне замовлення: 159
Мінімальне замовлення: 159
Мінімальне замовлення: 191
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQB25N33TM | Fairchild Semiconductor |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V |
на замовлення 19100 шт: термін постачання 21-31 дні (днів) |
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FQB25N33TM-F085 | ONSEMI |
Description: ONSEMI - FQB25N33TM-F085 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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FQB25N33TM-F085 | Fairchild Semiconductor |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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FQB25N33TM-F085OSCT | onsemi |
Description: Power Field-Effect Transistor, 2 Packaging: Bulk |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
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FQB25N33TM-F085OSCT | ONSEMI |
Description: ONSEMI - FQB25N33TM-F085OSCT - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
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FQB25N33 | fairchild | to-263/d2-pak |
на замовлення 60000 шт: термін постачання 14-28 дні (днів) |
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FQB25N33 | FAIRCHILD | 07+ SOT-263 |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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FQB25N33 | FAIRCHILD | SOT-263 |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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FQB25N33 | onsemi / Fairchild | MOSFET 330V, NCH, MOSFET |
товар відсутній |
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FQB25N33TM | onsemi |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V |
товар відсутній |
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FQB25N33TM | ON Semiconductor | Trans MOSFET N-CH 330V 25A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FQB25N33TM-F085 | ON Semiconductor | Trans MOSFET N-CH 330V 25A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FQB25N33TM-F085 | onsemi |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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FQB25N33TM-F085 | onsemi |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
FQB25N33TM |
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
на замовлення 19100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
201+ | 98.47 грн |
FQB25N33TM-F085 |
Виробник: ONSEMI
Description: ONSEMI - FQB25N33TM-F085 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: ONSEMI - FQB25N33TM-F085 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 136.39 грн |
FQB25N33TM-F085 |
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
159+ | 124.07 грн |
FQB25N33TM-F085OSCT |
на замовлення 336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
159+ | 124.07 грн |
FQB25N33TM-F085OSCT |
Виробник: ONSEMI
Description: ONSEMI - FQB25N33TM-F085OSCT - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Description: ONSEMI - FQB25N33TM-F085OSCT - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
на замовлення 336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
191+ | 136.39 грн |
FQB25N33TM |
Виробник: onsemi
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
товар відсутній
FQB25N33TM |
Виробник: ON Semiconductor
Trans MOSFET N-CH 330V 25A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 330V 25A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
FQB25N33TM-F085 |
Виробник: ON Semiconductor
Trans MOSFET N-CH 330V 25A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 330V 25A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
товар відсутній
FQB25N33TM-F085 |
Виробник: onsemi
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FQB25N33TM-F085 |
Виробник: onsemi
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 330V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
товар відсутній