Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (27438) > Сторінка 120 з 458
Фото | Назва | Виробник | Інформація |
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BUK9609-75A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 75 V Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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BUK9620-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 54A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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BUK9624-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 46A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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BUK9628-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 42A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V Qualification: AEC-Q101 |
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BUK9635-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 34A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4786 шт: термін постачання 21-31 дні (днів) |
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BUK9660-100A,118 | Nexperia USA Inc. | Description: MOSFET N-CH 100V 26A D2PAK |
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BUK9675-100A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 23A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14139 шт: термін постачання 21-31 дні (днів) |
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PHB20NQ20T,118 | Nexperia USA Inc. | Description: MOSFET N-CH 200V 20A D2PAK |
товар відсутній |
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PMK35EP,518 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 14.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V Power Dissipation (Max): 6.9W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
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PML260SN,118 | Nexperia USA Inc. | Description: MOSFET N-CH 200V 8.8A DFN3333-8 |
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PSMN012-80BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 74A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V |
на замовлення 5020 шт: термін постачання 21-31 дні (днів) |
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PSMN015-60BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 50A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V |
на замовлення 12483 шт: термін постачання 21-31 дні (днів) |
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PSMN017-80BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 50A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V |
на замовлення 5993 шт: термін постачання 21-31 дні (днів) |
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PSMN027-100BS,118 | Nexperia USA Inc. | Description: MOSFET N-CH 100V 37A D2PAK |
на замовлення 3803 шт: термін постачання 21-31 дні (днів) |
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PSMN034-100BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 32A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V |
на замовлення 10152 шт: термін постачання 21-31 дні (днів) |
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PSMN6R5-80BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V |
на замовлення 4297 шт: термін постачання 21-31 дні (днів) |
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PSMN7R0-100BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V Power Dissipation (Max): 269W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V |
на замовлення 3032 шт: термін постачання 21-31 дні (днів) |
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PSMN7R6-60BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 92A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V |
на замовлення 7931 шт: термін постачання 21-31 дні (днів) |
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PSMN8R7-80BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V |
на замовлення 5392 шт: термін постачання 21-31 дні (днів) |
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PSMN1R8-40YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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BUK7E2R6-60E,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 25 V Qualification: AEC-Q101 |
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BUK7613-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 58A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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BUK762R9-40E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V Qualification: AEC-Q101 |
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BUK763R1-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BUK764R0-40E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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BUK764R4-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BUK768R1-40E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BUK768R3-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BUK9614-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 56A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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BUK964R1-40E,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 75A D2PAK |
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BUK964R8-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BUK965R4-40E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V Qualification: AEC-Q101 |
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BUK966R5-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
на замовлення 4794 шт: термін постачання 21-31 дні (днів) |
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BUK969R0-60E,118 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 75A D2PAK |
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BUK7K25-40E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 27A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK7K5R1-30E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK7K5R6-30E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK7K6R8-40E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BUK9K18-40E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 30A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK9K29-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 30A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK9K45-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK9K52-60E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 16A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BUK9K6R2-40E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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BUK9K89-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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BUK7613-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 58A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3800 шт: термін постачання 21-31 дні (днів) |
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BUK763R1-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8935 шт: термін постачання 21-31 дні (днів) |
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BUK768R3-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5421 шт: термін постачання 21-31 дні (днів) |
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BUK9614-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 56A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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BUK964R1-40E,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 75A D2PAK |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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BUK964R8-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5243 шт: термін постачання 21-31 дні (днів) |
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BUK966R5-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
на замовлення 4794 шт: термін постачання 21-31 дні (днів) |
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BUK969R0-60E,118 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 75A D2PAK |
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BUK7K5R1-30E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1563 шт: термін постачання 21-31 дні (днів) |
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BUK9K29-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 30A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3246 шт: термін постачання 21-31 дні (днів) |
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BUK9K45-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK9K52-60E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 16A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13265 шт: термін постачання 21-31 дні (днів) |
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BUK9K89-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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74AHC126BQ-Q100,11 | Nexperia USA Inc. | Description: IC BUF NON-INVERT 5.5V 14DHVQFN |
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74AHC126D-Q100,118 | Nexperia USA Inc. | Description: IC BUFFER NON-INVERT 5.5V 14SO |
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74AHC14PW-Q100,118 | Nexperia USA Inc. |
Description: IC INVERTER 6CH 1-INP 14TSSOP Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
|
BUK9609-75A,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 201.19 грн |
10+ | 162.18 грн |
BUK9620-55A,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 54A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK9624-55A,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Description: MOSFET N-CH 55V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.77 грн |
10+ | 87.21 грн |
100+ | 69.41 грн |
BUK9628-55A,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK9635-55A,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.18 грн |
10+ | 65.45 грн |
100+ | 50.89 грн |
BUK9675-100A,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14139 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.24 грн |
10+ | 79.27 грн |
100+ | 61.65 грн |
PMK35EP,518 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
товар відсутній
PML260SN,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 200V 8.8A DFN3333-8
Description: MOSFET N-CH 200V 8.8A DFN3333-8
товар відсутній
PSMN012-80BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
на замовлення 5020 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.35 грн |
10+ | 85.85 грн |
100+ | 68.31 грн |
PSMN015-60BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
на замовлення 12483 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.55 грн |
10+ | 74.34 грн |
100+ | 57.83 грн |
PSMN017-80BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
на замовлення 5993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.24 грн |
10+ | 79 грн |
100+ | 61.46 грн |
PSMN027-100BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 37A D2PAK
Description: MOSFET N-CH 100V 37A D2PAK
на замовлення 3803 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.66 грн |
10+ | 87.08 грн |
100+ | 67.89 грн |
PSMN034-100BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 32A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
Description: MOSFET N-CH 100V 32A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
на замовлення 10152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.55 грн |
10+ | 74.34 грн |
100+ | 57.83 грн |
PSMN6R5-80BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
на замовлення 4297 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 150.71 грн |
10+ | 120.76 грн |
100+ | 96.11 грн |
PSMN7R0-100BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 269W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 269W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
на замовлення 3032 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.68 грн |
10+ | 150.26 грн |
100+ | 119.61 грн |
PSMN7R6-60BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Description: MOSFET N-CH 60V 92A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
на замовлення 7931 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.92 грн |
10+ | 84.34 грн |
100+ | 67.14 грн |
PSMN8R7-80BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
на замовлення 5392 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.74 грн |
10+ | 90.84 грн |
100+ | 72.33 грн |
PSMN1R8-40YLC,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 56.56 грн |
3000+ | 51.74 грн |
7500+ | 49.79 грн |
10500+ | 45.18 грн |
BUK7E2R6-60E,127 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK7613-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 57.18 грн |
1600+ | 46.72 грн |
2400+ | 44.39 грн |
BUK762R9-40E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK763R1-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 117.31 грн |
1600+ | 96.73 грн |
2400+ | 91.08 грн |
5600+ | 82 грн |
BUK764R0-40E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 80.71 грн |
1600+ | 65.95 грн |
2400+ | 62.65 грн |
BUK764R4-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 98.92 грн |
1600+ | 80.82 грн |
2400+ | 76.78 грн |
BUK768R1-40E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 54.99 грн |
1600+ | 44.93 грн |
2400+ | 42.69 грн |
BUK768R3-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 67.17 грн |
1600+ | 54.88 грн |
2400+ | 52.14 грн |
BUK9614-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK964R8-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 98.92 грн |
1600+ | 80.82 грн |
2400+ | 76.78 грн |
BUK965R4-40E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK966R5-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 4794 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 96.38 грн |
1600+ | 76.9 грн |
2400+ | 71.59 грн |
BUK7K25-40E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 27A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 27A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.46 грн |
BUK7K5R1-30E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 51.06 грн |
BUK7K5R6-30E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 48.74 грн |
BUK7K6R8-40E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 51.81 грн |
3000+ | 47.4 грн |
7500+ | 45.62 грн |
BUK9K18-40E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 29.94 грн |
3000+ | 27.14 грн |
BUK9K29-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 57.59 грн |
3000+ | 52.68 грн |
BUK9K45-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 48.16 грн |
BUK9K52-60E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 16A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 16A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.46 грн |
3000+ | 25.8 грн |
7500+ | 24.57 грн |
10500+ | 21.99 грн |
BUK9K6R2-40E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK9K89-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BUK7613-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.37 грн |
10+ | 81.74 грн |
100+ | 65.08 грн |
BUK763R1-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.08 грн |
10+ | 157.11 грн |
100+ | 127.08 грн |
BUK768R3-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 120.14 грн |
10+ | 96.05 грн |
100+ | 76.45 грн |
BUK9614-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.8 грн |
10+ | 56.48 грн |
BUK964R1-40E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Description: MOSFET N-CH 40V 75A D2PAK
на замовлення 444 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 153.56 грн |
10+ | 133.36 грн |
100+ | 107.17 грн |
BUK964R8-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5243 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 176.3 грн |
10+ | 141.43 грн |
100+ | 112.57 грн |
BUK966R5-60E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 4794 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 162.8 грн |
10+ | 140.54 грн |
100+ | 112.96 грн |
BUK7K5R1-30E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1563 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.35 грн |
10+ | 86.05 грн |
100+ | 68.49 грн |
500+ | 54.39 грн |
BUK9K29-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3246 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.56 грн |
10+ | 97 грн |
100+ | 77.24 грн |
500+ | 61.34 грн |
BUK9K45-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.92 грн |
10+ | 91.19 грн |
100+ | 71.11 грн |
500+ | 55.13 грн |
BUK9K52-60E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 16A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 16A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13265 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.69 грн |
10+ | 51 грн |
100+ | 39.68 грн |
500+ | 31.57 грн |
BUK9K89-100E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.8 грн |
10+ | 56.55 грн |
100+ | 43.98 грн |
500+ | 34.98 грн |
74AHC126BQ-Q100,11 |
Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 5.5V 14DHVQFN
Description: IC BUF NON-INVERT 5.5V 14DHVQFN
товар відсутній
74AHC126D-Q100,118 |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 14SO
Description: IC BUFFER NON-INVERT 5.5V 14SO
товар відсутній
74AHC14PW-Q100,118 |
Виробник: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 8.04 грн |
5000+ | 7.27 грн |
12500+ | 6.8 грн |