| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| BUK7M12-40EX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 34A Pulsed drain current: 192A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 23.6mΩ Mounting: SMD Gate charge: 15.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 211A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M15-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.4A Pulsed drain current: 155A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 29.1mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M19-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25.3A Pulsed drain current: 143A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 42mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M20-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 125A Power dissipation: 38W Case: LFPAK33; SOT1210 On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M21-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M22-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W Case: LFPAK33; SOT1210 Polarisation: unipolar Application: automotive industry Power dissipation: 75W Kind of package: reel; tape Gate charge: 23.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 147A Mounting: SMD Drain-source voltage: 80V Drain current: 26A On-state resistance: 55mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| BUK7M27-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 21.3A Pulsed drain current: 121A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK7M33-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 98A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 74mΩ Mounting: SMD Gate charge: 10.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 6643 шт: термін постачання 7-14 дні (днів) |
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| BUK7M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 78A Power dissipation: 36W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M45-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 13A Pulsed drain current: 77A Power dissipation: 31W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 89mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M4R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M5R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61.7A Pulsed drain current: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 On-state resistance: 10.9mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK7M6R3-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56.4A Pulsed drain current: 319A Power dissipation: 79W Case: LFPAK33; SOT1210 On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1497 шт: термін постачання 7-14 дні (днів) |
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| BUK7M6R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 On-state resistance: 13mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M8R0-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48.8A Pulsed drain current: 276A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 15.8mΩ Mounting: SMD Gate charge: 23.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M9R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 38.5A Pulsed drain current: 218A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 18.4mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7M9R9-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 240A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7S0R7-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 425A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2000 шт |
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| BUK7S1R0-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 325A Pulsed drain current: 1659A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 137nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2000 шт |
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| BUK7S1R5-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 260A Pulsed drain current: 1088A Power dissipation: 242W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.27mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2000 шт |
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| BUK7V4R2-40HX | NEXPERIA |
BUK7V4R2-40HX Multi channel transistors |
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| BUK7Y08-40B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 58.85A Pulsed drain current: 332A Power dissipation: 105W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 36.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y102-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.6A Pulsed drain current: 60A Power dissipation: 60W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 265mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y113-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.5A Pulsed drain current: 48A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 313mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y12-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 210A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 210A Power dissipation: 65W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 23.6mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK7Y14-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 46A Pulsed drain current: 259A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 35.1mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1463 шт: термін постачання 7-14 дні (днів) |
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| BUK7Y15-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 274A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 41.5mΩ Mounting: SMD Gate charge: 54.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y153-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.7A Pulsed drain current: 37.5A Power dissipation: 37.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 424mΩ Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y19-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 225A Power dissipation: 169W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 52.6mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK33; SOT1210 On-state resistance: 3.05mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
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| BUK7Y1R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 294W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
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| BUK7Y21-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 132A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y22-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 196A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 61mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y25-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 136A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 16.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y25-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 27.5A Pulsed drain current: 156A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 62.75mΩ Mounting: SMD Gate charge: 25.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y28-75B,115 | NEXPERIA |
BUK7Y28-75B.115 SMD N channel transistors |
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| BUK7Y29-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 102A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 57.1mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y2R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 190W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 5.45mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
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| BUK7Y3R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 172W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y3R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 93A; Idm: 526A; 115W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 93A Pulsed drain current: 526A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y41-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 18A Pulsed drain current: 100A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 103mΩ Mounting: SMD Gate charge: 16.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7Y43-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15.5A; Idm: 87A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.5A Pulsed drain current: 87A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y4R4-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 92A; Idm: 521A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 92A Pulsed drain current: 521A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y4R8-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 595A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 595A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 73.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
товар відсутній |
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| BUK7Y53-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17.6A Pulsed drain current: 99A Power dissipation: 85W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y59-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 67A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Pulsed drain current: 67A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 132mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y65-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13.4A Pulsed drain current: 76A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 0.18Ω Mounting: SMD Gate charge: 17.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y6R0-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 85A Pulsed drain current: 482A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 45.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y72-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 11A Pulsed drain current: 63A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 181mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y7R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48A Pulsed drain current: 272A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y7R2-60EX | NEXPERIA |
BUK7Y7R2-60EX SMD N channel transistors |
товар відсутній |
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 |
BUK7Y7R6-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Power dissipation: 94.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 26.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y7R8-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 78A Pulsed drain current: 441A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 19.6mΩ Mounting: SMD Gate charge: 63.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
товар відсутній |
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| BUK7Y8R7-60EX | NEXPERIA |
BUK7Y8R7-60EX SMD N channel transistors |
на замовлення 862 шт: термін постачання 7-14 дні (днів) |
|
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| BUK7Y98-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.7A Pulsed drain current: 49A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y9R9-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 63A Pulsed drain current: 354A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 24.9mΩ Mounting: SMD Gate charge: 51.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK9214-30A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 45A Pulsed drain current: 253A Power dissipation: 107W Case: DPAK Gate-source voltage: ±15V On-state resistance: 26.6mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
товар відсутній |
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| BUK9217-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 45A; Idm: 256A; 167W; DPAK Application: automotive industry Mounting: SMD Drain-source voltage: 75V Drain current: 45A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 256A Case: DPAK кількість в упаковці: 2500 шт |
товар відсутній |
| BUK7M12-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 192A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 23.6mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 192A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 23.6mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M12-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M15-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 29.1mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 29.1mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M19-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25.3A
Pulsed drain current: 143A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25.3A
Pulsed drain current: 143A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M20-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M21-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M22-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| BUK7M27-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M33-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 98A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 98A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 6643 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 96.09 грн |
| 7+ | 38.91 грн |
| 25+ | 33.74 грн |
| 37+ | 25.51 грн |
| 102+ | 24.12 грн |
| BUK7M42-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M45-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13A
Pulsed drain current: 77A
Power dissipation: 31W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13A
Pulsed drain current: 77A
Power dissipation: 31W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M4R3-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M5R0-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M6R3-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56.4A
Pulsed drain current: 319A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56.4A
Pulsed drain current: 319A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1497 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 97.83 грн |
| 5+ | 59.13 грн |
| 23+ | 41.96 грн |
| 62+ | 39.68 грн |
| BUK7M6R7-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M8R0-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48.8A
Pulsed drain current: 276A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 23.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48.8A
Pulsed drain current: 276A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 23.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M8R5-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M9R5-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 38.5A
Pulsed drain current: 218A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 38.5A
Pulsed drain current: 218A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7M9R9-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7S0R7-40HJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 425A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 425A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2000 шт
товар відсутній
| BUK7S1R0-40HJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 325A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 325A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2000 шт
товар відсутній
| BUK7S1R5-40HJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 260A
Pulsed drain current: 1088A
Power dissipation: 242W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.27mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 260A
Pulsed drain current: 1088A
Power dissipation: 242W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.27mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2000 шт
товар відсутній
| BUK7Y08-40B,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58.85A
Pulsed drain current: 332A
Power dissipation: 105W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 36.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58.85A
Pulsed drain current: 332A
Power dissipation: 105W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 36.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y102-100B,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 60W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 60W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y113-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 313mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 313mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y12-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 210A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 210A
Power dissipation: 65W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 23.6mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 210A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 210A
Power dissipation: 65W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 23.6mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y14-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 46A
Pulsed drain current: 259A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.1mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 46A
Pulsed drain current: 259A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.1mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1463 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.24 грн |
| 5+ | 62.33 грн |
| 20+ | 47.86 грн |
| 54+ | 45.42 грн |
| 500+ | 44.29 грн |
| BUK7Y15-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 41.5mΩ
Mounting: SMD
Gate charge: 54.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 41.5mΩ
Mounting: SMD
Gate charge: 54.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y153-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.7A
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 424mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.7A
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 424mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y19-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 225A
Power dissipation: 169W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 52.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 225A
Power dissipation: 169W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 52.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y1R4-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7Y1R7-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7Y21-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y22-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 196A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 196A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y25-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y25-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 62.75mΩ
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 62.75mΩ
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y29-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 102A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 57.1mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 102A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 57.1mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y2R5-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 190W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 190W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7Y3R0-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y3R5-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 93A; Idm: 526A; 115W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 93A
Pulsed drain current: 526A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 93A; Idm: 526A; 115W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 93A
Pulsed drain current: 526A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y41-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 18A
Pulsed drain current: 100A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 18A
Pulsed drain current: 100A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y43-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.5A; Idm: 87A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.5A
Pulsed drain current: 87A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.5A; Idm: 87A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.5A
Pulsed drain current: 87A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y4R4-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 92A; Idm: 521A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 92A
Pulsed drain current: 521A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 92A; Idm: 521A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 92A
Pulsed drain current: 521A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y4R8-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 595A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 595A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 73.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 595A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 595A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 73.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7Y53-100B,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 85W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 85W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y59-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 67A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 67A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 67A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 67A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y65-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13.4A
Pulsed drain current: 76A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13.4A
Pulsed drain current: 76A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y6R0-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 482A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 45.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 482A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 45.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y72-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 11A
Pulsed drain current: 63A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 181mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 11A
Pulsed drain current: 63A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 181mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y7R0-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48A
Pulsed drain current: 272A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48A
Pulsed drain current: 272A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y7R6-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 94.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 26.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 94.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 26.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y7R8-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 78A
Pulsed drain current: 441A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 19.6mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 78A
Pulsed drain current: 441A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 19.6mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7Y8R7-60EX |
|
Виробник: NEXPERIA
BUK7Y8R7-60EX SMD N channel transistors
BUK7Y8R7-60EX SMD N channel transistors
на замовлення 862 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.18 грн |
| 13+ | 73.81 грн |
| 36+ | 69.76 грн |
| BUK7Y98-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.7A
Pulsed drain current: 49A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.7A
Pulsed drain current: 49A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7Y9R9-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63A
Pulsed drain current: 354A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 24.9mΩ
Mounting: SMD
Gate charge: 51.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63A
Pulsed drain current: 354A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 24.9mΩ
Mounting: SMD
Gate charge: 51.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK9214-30A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Pulsed drain current: 253A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 26.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Pulsed drain current: 253A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 26.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK9217-75B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; Idm: 256A; 167W; DPAK
Application: automotive industry
Mounting: SMD
Drain-source voltage: 75V
Drain current: 45A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 256A
Case: DPAK
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; Idm: 256A; 167W; DPAK
Application: automotive industry
Mounting: SMD
Drain-source voltage: 75V
Drain current: 45A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 256A
Case: DPAK
кількість в упаковці: 2500 шт
товар відсутній