| Фото | Назва | Виробник | Інформація |
Доступність |
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PDZ9.1B-QX | NEXPERIA |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 0.9V Application: automotive industry кількість в упаковці: 25 шт |
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PDZ9.1B-QZ | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 0.9V Application: automotive industry кількість в упаковці: 25 шт |
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PDZ9.1B,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA Max. load current: 0.2A Max. forward voltage: 0.9V кількість в упаковці: 25 шт |
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| PEMB1,115 | NEXPERIA |
PEMB1.115 PNP SMD transistors |
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| PEMB10,115 | NEXPERIA |
PEMB10.115 PNP SMD transistors |
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| PEMB11,115 | NEXPERIA |
PEMB11.115 PNP SMD transistors |
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PEMB13,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 300mW Case: SOT666 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
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| PEMB2,115 | NEXPERIA |
PEMB2.115 PNP SMD transistors |
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PEMB20,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ Mounting: SMD Application: automotive industry Collector current: 0.1A Power dissipation: 0.3W Polarisation: bipolar Current gain: 30 Collector-emitter voltage: 50V Kind of package: reel; tape Frequency: 180MHz Case: SOT666 Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Type of transistor: PNP x2 кількість в упаковці: 5 шт |
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PEMB3,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 300mW Case: SOT666 Current gain: 200 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Base resistor: 4.7kΩ Application: automotive industry |
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| PEMB9,115 | NEXPERIA |
PEMB9.115 PNP SMD transistors |
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| PEMB9,315 | NEXPERIA |
PEMB9.315 PNP SMD transistors |
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| PEMD12,115 | NEXPERIA |
PEMD12.115 Complementary transistors |
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PEMD13,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT666 Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 180...230MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN / PNP Kind of package: reel; tape |
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| PEMD14,115 | NEXPERIA |
PEMD14.115 Complementary transistors |
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PEMD15,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT666 Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 180...230MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN / PNP Kind of package: reel; tape |
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| PEMD16,115 | NEXPERIA |
PEMD16.115 Complementary transistors |
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PEMD2,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Case: SOT666 Mounting: SMD Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 180...230MHz Kind of package: reel; tape Type of transistor: NPN / PNP Collector-emitter voltage: 50V Collector current: 0.1A Polarisation: bipolar |
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PEMD20,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Case: SOT666 Mounting: SMD Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Frequency: 180...230MHz Kind of package: reel; tape Type of transistor: NPN / PNP Collector-emitter voltage: 50V Collector current: 0.1A Polarisation: bipolar |
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PEMD3,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 5 шт |
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PEMD30,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 2.2kΩ кількість в упаковці: 5 шт |
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PEMD4,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 10kΩ кількість в упаковці: 5 шт |
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| PEMD48,115 | NEXPERIA |
PEMD48.115 Complementary transistors |
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PEMD6,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT666 Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Frequency: 180...230MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN / PNP Kind of package: reel; tape |
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| PEMD9,115 | NEXPERIA |
PEMD9.115 Complementary transistors |
на замовлення 2465 шт: термін постачання 7-14 дні (днів) |
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| PEMH10,115 | NEXPERIA |
PEMH10.115 NPN SMD transistors |
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PEMH11,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ кількість в упаковці: 5 шт |
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PEMH11,315 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ кількість в упаковці: 8000 шт |
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PEMH13,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
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PEMH13,315 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ кількість в упаковці: 5 шт |
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| PEMH14,115 | NEXPERIA |
PEMH14.115 NPN SMD transistors |
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PEMH15,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 300mW Case: SOT666 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Application: automotive industry |
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PEMH18,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 10kΩ кількість в упаковці: 5 шт |
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| PEMH19,115 | NEXPERIA |
PEMH19.115 NPN SMD transistors |
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| PEMH2,115 | NEXPERIA |
PEMH2.115 NPN SMD transistors |
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| PEMH2,315 | NEXPERIA |
PEMH2.315 NPN SMD transistors |
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PEMH20,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ Case: SOT666 Mounting: SMD Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 30 Kind of package: reel; tape Base-emitter resistor: 2.2kΩ Frequency: 230MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.3W кількість в упаковці: 5 шт |
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| PEMH4,115 | NEXPERIA |
PEMH4.115 NPN SMD transistors |
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| PEMH9,115 | NEXPERIA |
PEMH9.115 NPN SMD transistors |
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| PEMH9,315 | NEXPERIA |
PEMH9.315 NPN SMD transistors |
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| PEMT1,115 | NEXPERIA |
PEMT1.115 PNP SMD transistors |
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| PEMT1,315 | NEXPERIA |
PEMT1.315 PNP SMD transistors |
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PEMX1,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.1A; 200mW; SOT666 Mounting: SMD Collector-emitter voltage: 40V Power dissipation: 200mW Polarisation: bipolar Application: automotive industry Type of transistor: NPN x2 Current gain: 120 Kind of package: reel; tape Case: SOT666 Frequency: 100MHz Collector current: 0.1A кількість в упаковці: 5 шт |
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| PEMX1,315 | NEXPERIA |
PEMX1.315 NPN SMD transistors |
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PEMZ1,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.1A Power dissipation: 0.2W Case: SOT666 Current gain: 120 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz кількість в упаковці: 5 шт |
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PEMZ7,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.3W Case: SOT666 Current gain: 200 Mounting: SMD Kind of package: reel; tape Frequency: 280MHz; 420MHz кількість в упаковці: 5 шт |
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PEMZ7,315 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.3W Case: SOT666 Current gain: 200 Mounting: SMD Kind of package: reel; tape Frequency: 280MHz; 420MHz кількість в упаковці: 8000 шт |
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PESD12VL1BA,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 200W; 15.9V; 5A; bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 15.9V Max. forward impulse current: 5A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 4785 шт: термін постачання 7-14 дні (днів) |
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PESD12VL2BT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 15.8V; 5A; 200W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 15.8V Max. forward impulse current: 5A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 8483 шт: термін постачання 7-14 дні (днів) |
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PESD12VS1UA,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 14.5V; unidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14.5V Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 5 шт |
на замовлення 900 шт: термін постачання 7-14 дні (днів) |
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PESD12VS1UB,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 15V; 5A; unidirectional; SOD523; 75pF Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 15V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection Capacitance: 75pF кількість в упаковці: 5 шт |
на замовлення 2975 шт: термін постачання 7-14 дні (днів) |
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PESD12VS1UJ,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 14.5V; unidirectional; SOD323F; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14.5V Semiconductor structure: unidirectional Case: SOD323F Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 5 шт |
на замовлення 1780 шт: термін постачання 7-14 дні (днів) |
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PESD12VS1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 14.5V; unidirectional; DFN1006-2,SOD882; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14.5V Semiconductor structure: unidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 10000 шт |
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PESD12VS2UT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 14.7÷15.3V; 5A; 180W; SOT23 Type of diode: TVS array Breakdown voltage: 14.7...15.3V Max. forward impulse current: 5A Peak pulse power dissipation: 180W Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 1µA кількість в упаковці: 5 шт |
на замовлення 3225 шт: термін постачання 7-14 дні (днів) |
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| PESD12VV1BLSYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 14.6÷16.8V; bidirectional; SOD882BD Type of diode: TVS Breakdown voltage: 14.6...16.8V Semiconductor structure: bidirectional Mounting: SMD Case: SOD882BD Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 10nA кількість в упаковці: 5 шт |
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PESD15VL1BA,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 200W; 18.9V; 5A; bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 18.9V Max. forward impulse current: 5A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Features of semiconductor devices: ESD protection Leakage current: 50nA Capacitance: 16pF кількість в упаковці: 5 шт |
на замовлення 35 шт: термін постачання 7-14 дні (днів) |
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PESD15VL2BT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 18.8V; 5A; 200W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 18.8V Max. forward impulse current: 5A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 15V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 6420 шт: термін постачання 7-14 дні (днів) |
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PESD15VS1UB,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 160W; 18V; 5A; unidirectional; SOD523; max.150°C Type of diode: TVS Breakdown voltage: 18V Max. forward impulse current: 5A Peak pulse power dissipation: 160W Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 15V Features of semiconductor devices: ESD protection Leakage current: 50nA Operating temperature: max. 150°C кількість в упаковці: 5 шт |
на замовлення 1690 шт: термін постачання 7-14 дні (днів) |
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PESD15VS1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 150W; 17.6÷18.4V; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Breakdown voltage: 17.6...18.4V Peak pulse power dissipation: 0.15kW Semiconductor structure: unidirectional Mounting: SMD Case: DFN1006-2; SOD882 Max. off-state voltage: 15V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
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| PESD15VS2UAT-QR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 17.6÷18.4V; 5A; 160W; double,common cathode Type of diode: TVS array Breakdown voltage: 17.6...18.4V Max. forward impulse current: 5A Peak pulse power dissipation: 160W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 15V Features of semiconductor devices: ESD protection Leakage current: 50nA Capacitance: 70pF Application: automotive industry кількість в упаковці: 5 шт |
товар відсутній |
| PDZ9.1B-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Application: automotive industry
кількість в упаковці: 25 шт
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Application: automotive industry
кількість в упаковці: 25 шт
товар відсутній
| PDZ9.1B-QZ |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Application: automotive industry
кількість в упаковці: 25 шт
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Application: automotive industry
кількість в упаковці: 25 шт
товар відсутній
| PDZ9.1B,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Max. load current: 0.2A
Max. forward voltage: 0.9V
кількість в упаковці: 25 шт
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 9.1V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Max. load current: 0.2A
Max. forward voltage: 0.9V
кількість в упаковці: 25 шт
товар відсутній
| PEMB13,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
товар відсутній
| PEMB20,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Collector current: 0.1A
Power dissipation: 0.3W
Polarisation: bipolar
Current gain: 30
Collector-emitter voltage: 50V
Kind of package: reel; tape
Frequency: 180MHz
Case: SOT666
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Type of transistor: PNP x2
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Collector current: 0.1A
Power dissipation: 0.3W
Polarisation: bipolar
Current gain: 30
Collector-emitter voltage: 50V
Kind of package: reel; tape
Frequency: 180MHz
Case: SOT666
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Type of transistor: PNP x2
кількість в упаковці: 5 шт
товар відсутній
| PEMB3,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Application: automotive industry
товар відсутній
| PEMD13,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT666
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 180...230MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT666
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 180...230MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| PEMD15,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT666
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 180...230MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT666
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 180...230MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| PEMD2,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT666
Mounting: SMD
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 180...230MHz
Kind of package: reel; tape
Type of transistor: NPN / PNP
Collector-emitter voltage: 50V
Collector current: 0.1A
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT666
Mounting: SMD
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 180...230MHz
Kind of package: reel; tape
Type of transistor: NPN / PNP
Collector-emitter voltage: 50V
Collector current: 0.1A
Polarisation: bipolar
товар відсутній
| PEMD20,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT666
Mounting: SMD
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 180...230MHz
Kind of package: reel; tape
Type of transistor: NPN / PNP
Collector-emitter voltage: 50V
Collector current: 0.1A
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SOT666
Mounting: SMD
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 180...230MHz
Kind of package: reel; tape
Type of transistor: NPN / PNP
Collector-emitter voltage: 50V
Collector current: 0.1A
Polarisation: bipolar
товар відсутній
| PEMD3,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMD30,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 2.2kΩ
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 2.2kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMD4,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 10kΩ
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 10kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMD6,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT666
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 180...230MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT666
Power dissipation: 300mW
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Frequency: 180...230MHz
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Kind of package: reel; tape
товар відсутній
| PEMD9,115 |
|
Виробник: NEXPERIA
PEMD9.115 Complementary transistors
PEMD9.115 Complementary transistors
на замовлення 2465 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.36 грн |
| 145+ | 6.64 грн |
| 400+ | 6.28 грн |
| PEMH11,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMH11,315 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 8000 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
кількість в упаковці: 8000 шт
товар відсутній
| PEMH13,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMH13,315 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMH15,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 300mW
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
товар відсутній
| PEMH18,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
кількість в упаковці: 5 шт
товар відсутній
| PEMH20,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ
Case: SOT666
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 30
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Frequency: 230MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.3W
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ
Case: SOT666
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 30
Kind of package: reel; tape
Base-emitter resistor: 2.2kΩ
Frequency: 230MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.3W
кількість в упаковці: 5 шт
товар відсутній
| PEMX1,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.1A; 200mW; SOT666
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 200mW
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 120
Kind of package: reel; tape
Case: SOT666
Frequency: 100MHz
Collector current: 0.1A
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.1A; 200mW; SOT666
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 200mW
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 120
Kind of package: reel; tape
Case: SOT666
Frequency: 100MHz
Collector current: 0.1A
кількість в упаковці: 5 шт
товар відсутній
| PEMZ1,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 120
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 120
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
кількість в упаковці: 5 шт
товар відсутній
| PEMZ7,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT666
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 280MHz; 420MHz
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT666
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 280MHz; 420MHz
кількість в упаковці: 5 шт
товар відсутній
| PEMZ7,315 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT666
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 280MHz; 420MHz
кількість в упаковці: 8000 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT666
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 280MHz; 420MHz
кількість в упаковці: 8000 шт
товар відсутній
| PESD12VL1BA,115 |
|
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 15.9V; 5A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 15.9V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 15.9V; 5A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 15.9V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 4785 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.13 грн |
| 35+ | 8.1 грн |
| 100+ | 6.98 грн |
| 185+ | 5.3 грн |
| 500+ | 5.01 грн |
| PESD12VL2BT,215 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 15.8V; 5A; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 15.8V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 15.8V; 5A; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 15.8V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 8483 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.3 грн |
| 25+ | 10.32 грн |
| 100+ | 9.04 грн |
| 145+ | 6.8 грн |
| 390+ | 6.43 грн |
| PESD12VS1UA,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.5V; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14.5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.5V; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14.5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 5 шт
на замовлення 900 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.62 грн |
| 30+ | 8.53 грн |
| 100+ | 7.15 грн |
| 155+ | 6.2 грн |
| 425+ | 5.86 грн |
| PESD12VS1UB,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15V; 5A; unidirectional; SOD523; 75pF
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Capacitance: 75pF
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 15V; 5A; unidirectional; SOD523; 75pF
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Capacitance: 75pF
кількість в упаковці: 5 шт
на замовлення 2975 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 11.68 грн |
| 45+ | 6.01 грн |
| 100+ | 5.18 грн |
| 240+ | 3.97 грн |
| 660+ | 3.75 грн |
| PESD12VS1UJ,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.5V; unidirectional; SOD323F; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14.5V
Semiconductor structure: unidirectional
Case: SOD323F
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.5V; unidirectional; SOD323F; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14.5V
Semiconductor structure: unidirectional
Case: SOD323F
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 5 шт
на замовлення 1780 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.62 грн |
| 30+ | 8.53 грн |
| 100+ | 7.15 грн |
| 145+ | 6.74 грн |
| 390+ | 6.38 грн |
| 3000+ | 6.16 грн |
| PESD12VS1UL,315 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.5V; unidirectional; DFN1006-2,SOD882; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14.5V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10000 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14.5V; unidirectional; DFN1006-2,SOD882; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14.5V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10000 шт
товар відсутній
| PESD12VS2UT,215 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 14.7÷15.3V; 5A; 180W; SOT23
Type of diode: TVS array
Breakdown voltage: 14.7...15.3V
Max. forward impulse current: 5A
Peak pulse power dissipation: 180W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 14.7÷15.3V; 5A; 180W; SOT23
Type of diode: TVS array
Breakdown voltage: 14.7...15.3V
Max. forward impulse current: 5A
Peak pulse power dissipation: 180W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
кількість в упаковці: 5 шт
на замовлення 3225 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.62 грн |
| 35+ | 7.51 грн |
| 100+ | 6.57 грн |
| 195+ | 4.93 грн |
| 535+ | 4.68 грн |
| PESD12VV1BLSYL |
|
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 14.6÷16.8V; bidirectional; SOD882BD
Type of diode: TVS
Breakdown voltage: 14.6...16.8V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD882BD
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 14.6÷16.8V; bidirectional; SOD882BD
Type of diode: TVS
Breakdown voltage: 14.6...16.8V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD882BD
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
кількість в упаковці: 5 шт
товар відсутній
| PESD15VL1BA,115 |
|
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 18.9V; 5A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Capacitance: 16pF
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 18.9V; 5A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Capacitance: 16pF
кількість в упаковці: 5 шт
на замовлення 35 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.42 грн |
| 25+ | 11 грн |
| 100+ | 7.39 грн |
| 200+ | 4.86 грн |
| 545+ | 4.59 грн |
| PESD15VL2BT,215 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 18.8V; 5A; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 18.8V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 18.8V; 5A; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 18.8V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 6420 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.04 грн |
| 25+ | 10.24 грн |
| 100+ | 8.87 грн |
| 145+ | 6.7 грн |
| 395+ | 6.33 грн |
| PESD15VS1UB,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18V; 5A; unidirectional; SOD523; max.150°C
Type of diode: TVS
Breakdown voltage: 18V
Max. forward impulse current: 5A
Peak pulse power dissipation: 160W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Operating temperature: max. 150°C
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18V; 5A; unidirectional; SOD523; max.150°C
Type of diode: TVS
Breakdown voltage: 18V
Max. forward impulse current: 5A
Peak pulse power dissipation: 160W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Operating temperature: max. 150°C
кількість в упаковці: 5 шт
на замовлення 1690 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 11.68 грн |
| 45+ | 5.8 грн |
| 100+ | 5.02 грн |
| 245+ | 3.99 грн |
| 665+ | 3.78 грн |
| PESD15VS1UL,315 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 150W; 17.6÷18.4V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Breakdown voltage: 17.6...18.4V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2; SOD882
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 150W; 17.6÷18.4V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Breakdown voltage: 17.6...18.4V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2; SOD882
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
| PESD15VS2UAT-QR |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.6÷18.4V; 5A; 160W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 17.6...18.4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 160W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Capacitance: 70pF
Application: automotive industry
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.6÷18.4V; 5A; 160W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 17.6...18.4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 160W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Capacitance: 70pF
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній