Фото | Назва | Виробник | Інформація |
Доступність |
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PMCM6501VPEZ | NEXPERIA | PMCM6501VPEZ SMD P channel transistors |
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PMCM650CUNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 16A Case: WLCSP6 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 4500 шт |
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PMCPB5530X,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 5.3/-4.5A Pulsed drain current: -14...12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12/±12V On-state resistance: 34/70mΩ Mounting: SMD Gate charge: 21.7/12.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMCXB1000UEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 590/-410mA Pulsed drain current: -1.7...2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 670mΩ/1.4Ω Mounting: SMD Gate charge: 1.05/1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMCXB900UELZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMCXB900UEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMD2001D,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.54W Collector-emitter voltage: 40V Collector current: 0.6A Semiconductor structure: common base; common emitter Current gain: 50...300 Type of transistor: NPN / PNP Polarisation: bipolar кількість в упаковці: 5 шт |
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PMD3001D,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6 Semiconductor structure: common base; common emitter Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Pulsed collector current: 2A Type of transistor: NPN / PNP Collector current: 1A Collector-emitter voltage: 40V Polarisation: bipolar кількість в упаковці: 5 шт |
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PMDPB30XN,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB30XNZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB55XP,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 99mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB56XNEAX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 12A Case: DFN2020D-6; SOT1118D Gate-source voltage: ±12V On-state resistance: 121mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMDPB58UPE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -14.4A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMDPB70XP,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.9A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 137mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB70XPE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.1A Pulsed drain current: -12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 112mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB80XP,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.7A Pulsed drain current: -11A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 148mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB85UPE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 144mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB95XNE2X | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Pulsed drain current: 11A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMDT290UCE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
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PMDT290UCEH | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
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PMDT290UNE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 610mΩ Mounting: SMD Gate charge: 0.68nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
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PMDXB1200UPEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.26A Pulsed drain current: -1.7A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMDXB550UNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.37A Pulsed drain current: 2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1.17Ω Mounting: SMD Gate charge: 1.05nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMDXB600UNELZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMDXB600UNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMDXB950UPEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -300mA Pulsed drain current: -2A Case: DFN1010B-6; SOT1216 On-state resistance: 2.1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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PMEG030V030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Capacitance: 495pF Max. forward voltage: 0.45V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1500 шт |
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PMEG030V050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1500 шт |
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PMEG040V030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 4.2A Reverse recovery time: 11ns Semiconductor structure: single diode Capacitance: 130pF Max. forward voltage: 0.34V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 18mA Max. forward impulse current: 120A кількість в упаковці: 1 шт |
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PMEG040V050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1500 шт |
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PMEG045T030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 4.2A; 16ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 4.2A Reverse recovery time: 16ns Semiconductor structure: single diode Capacitance: 350pF Max. forward voltage: 0.325V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 9mA Max. forward impulse current: 45A кількість в упаковці: 1 шт |
на замовлення 1496 шт: термін постачання 7-14 дні (днів) |
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PMEG045T050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 7A; 16ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 7A Reverse recovery time: 16ns Semiconductor structure: single diode Capacitance: 350pF Max. forward voltage: 0.39V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 9mA Max. forward impulse current: 45A кількість в упаковці: 1 шт |
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PMEG045T100EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.545V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 130A кількість в упаковці: 5000 шт |
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PMEG045T100EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.545V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 130A кількість в упаковці: 1500 шт |
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PMEG045T100EPEZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15B,SOT1289B Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 1.4nF Max. forward voltage: 0.545V Case: CFP15B; SOT1289B Kind of package: reel; tape Max. forward impulse current: 130A кількість в упаковці: 5000 шт |
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PMEG045T150EIPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Capacitance: 720pF Max. forward voltage: 0.57V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 130A кількість в упаковці: 1500 шт |
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PMEG045T150EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Capacitance: 800pF Max. forward voltage: 0.55V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 210A кількість в упаковці: 5000 шт |
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PMEG045T150EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Capacitance: 2.2nF Max. forward voltage: 0.55V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 210A кількість в упаковці: 1500 шт |
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PMEG045V050EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 5A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 5000 шт |
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PMEG045V050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 5A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 1500 шт |
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PMEG045V100EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 5000 шт |
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PMEG045V100EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 14A; 17ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 14A Reverse recovery time: 17ns Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.33V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 0.6mA Max. forward impulse current: 210A кількість в упаковці: 1 шт |
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PMEG045V150EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 1500 шт |
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PMEG045V150EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 5000 шт |
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PMEG050T150EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Capacitance: 2.2nF Max. forward voltage: 0.55V Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 1500 шт |
товар відсутній |
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PMEG050V030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 1500 шт |
товар відсутній |
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PMEG050V150EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 5000 шт |
товар відсутній |
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PMEG050V150EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 21A; 20ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 21A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 570pF Max. forward voltage: 0.38V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 1mA Max. forward impulse current: 240A кількість в упаковці: 1 шт |
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PMEG060T050ELPE-QZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Case: CFP15B; SOT1289B Kind of package: reel; tape Max. forward impulse current: 80A Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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PMEG060T050ELPEZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Case: CFP15B; SOT1289B Kind of package: reel; tape Max. forward impulse current: 80A кількість в упаковці: 5000 шт |
товар відсутній |
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PMEG060T100CLPEZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 10A; CFP15B,SOT1289B Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common cathode; double Capacitance: 560pF Max. forward voltage: 0.74V Case: CFP15B; SOT1289B Kind of package: reel; tape Max. forward impulse current: 150A кількість в упаковці: 5000 шт |
товар відсутній |
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PMEG060V030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 4.2A; 11ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 4.2A Reverse recovery time: 11ns Semiconductor structure: single diode Capacitance: 120pF Max. forward voltage: 0.4V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 34mA Max. forward impulse current: 120A кількість в упаковці: 1 шт |
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PMEG060V050EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Case: CFP15; SOT1289 Kind of package: reel; tape кількість в упаковці: 5000 шт |
товар відсутній |
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PMEG060V050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 7A; 12ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 7A Reverse recovery time: 12ns Semiconductor structure: single diode Capacitance: 175pF Max. forward voltage: 0.435V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 8mA Max. forward impulse current: 160A кількість в упаковці: 1 шт |
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PMEG060V100EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 14A Reverse recovery time: 16ns Semiconductor structure: single diode Capacitance: 350pF Max. forward voltage: 0.435V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 0.7mA Max. forward impulse current: 210A кількість в упаковці: 1 шт |
товар відсутній |
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+1 |
PMEG060V100EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 14A Reverse recovery time: 16ns Semiconductor structure: single diode Capacitance: 350pF Max. forward voltage: 0.435V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 0.7mA Max. forward impulse current: 210A кількість в упаковці: 1 шт |
на замовлення 2634 шт: термін постачання 7-14 дні (днів) |
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PMEG10010ELR-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1.4A Reverse recovery time: 3.7ns Semiconductor structure: single diode Capacitance: 70pF Max. forward voltage: 0.77V Case: CFP3; SOD123W Kind of package: reel; tape Leakage current: 0.15µA Max. forward impulse current: 50A Power dissipation: 2.14W Application: automotive industry кількість в упаковці: 5 шт |
товар відсутній |
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PMEG10010ELRX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1.4A Reverse recovery time: 3.7ns Semiconductor structure: single diode Capacitance: 28pF Max. forward voltage: 0.68V Case: CFP3; SOD123W Kind of package: reel; tape Leakage current: 0.5mA Max. forward impulse current: 50A кількість в упаковці: 1 шт |
на замовлення 1879 шт: термін постачання 7-14 дні (днів) |
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PMEG10020AELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Capacitance: 135pF Max. forward voltage: 0.77V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 50A кількість в упаковці: 3000 шт |
товар відсутній |
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PMEG10020AELR-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; 5ns; CFP3,SOD123W; 2.14W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Reverse recovery time: 5ns Semiconductor structure: single diode Capacitance: 135pF Max. forward voltage: 0.77V Case: CFP3; SOD123W Kind of package: reel; tape Leakage current: 1mA Max. forward impulse current: 50A Power dissipation: 2.14W Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
PMCM650CUNEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 4500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 4500 шт
товар відсутній
PMCPB5530X,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMCXB1000UEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMCXB900UELZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMCXB900UEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMD2001D,115 |
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
PMD3001D,115 |
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Collector current: 1A
Collector-emitter voltage: 40V
Polarisation: bipolar
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Collector current: 1A
Collector-emitter voltage: 40V
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
PMDPB30XN,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB30XNZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB55XP,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB56XNEAX |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDPB58UPE,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDPB70XP,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB70XPE,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB80XP,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB85UPE,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB95XNE2X |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDT290UCE,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDT290UCEH |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDT290UNE,115 |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDXB1200UPEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.26A
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.26A
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB550UNEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB600UNELZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB600UNEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB950UPEZ |
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
PMEG030V030EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 495pF
Max. forward voltage: 0.45V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 495pF
Max. forward voltage: 0.45V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG030V050EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG040V030EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.34V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 18mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.34V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 18mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
PMEG040V050EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T030EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 4.2A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.325V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 4.2A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.325V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
на замовлення 1496 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.16 грн |
10+ | 27.83 грн |
25+ | 24.16 грн |
53+ | 18.3 грн |
144+ | 17.31 грн |
PMEG045T050EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 7A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.39V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 7A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.39V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
товар відсутній
PMEG045T100EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T100EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T100EPEZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 1.4nF
Max. forward voltage: 0.545V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 1.4nF
Max. forward voltage: 0.545V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T150EIPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 720pF
Max. forward voltage: 0.57V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 720pF
Max. forward voltage: 0.57V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T150EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T150EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V050EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG045V050EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V100EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG045V100EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 14A; 17ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 14A
Reverse recovery time: 17ns
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.33V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 14A; 17ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 14A
Reverse recovery time: 17ns
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.33V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
товар відсутній
PMEG045V150EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V150EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG050T150EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG050V030EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG050V150EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG050V150EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 21A; 20ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 21A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 570pF
Max. forward voltage: 0.38V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 240A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 21A; 20ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 21A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 570pF
Max. forward voltage: 0.38V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 240A
кількість в упаковці: 1 шт
товар відсутній
PMEG060T050ELPE-QZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
PMEG060T050ELPEZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
кількість в упаковці: 5000 шт
товар відсутній
PMEG060T100CLPEZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.74V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 150A
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.74V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 150A
кількість в упаковці: 5000 шт
товар відсутній
PMEG060V030EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 120pF
Max. forward voltage: 0.4V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 34mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 120pF
Max. forward voltage: 0.4V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 34mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V050EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG060V050EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 7A; 12ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Reverse recovery time: 12ns
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 8mA
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 7A; 12ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Reverse recovery time: 12ns
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 8mA
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V100EPDAZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V100EPDZ |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
на замовлення 2634 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 68.02 грн |
7+ | 41.36 грн |
25+ | 35.87 грн |
35+ | 28.03 грн |
94+ | 26.38 грн |
PMEG10010ELR-QX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.15µA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.15µA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
PMEG10010ELRX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.68V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.5mA
Max. forward impulse current: 50A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.68V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.5mA
Max. forward impulse current: 50A
кількість в упаковці: 1 шт
на замовлення 1879 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 31.08 грн |
16+ | 16.95 грн |
25+ | 13.03 грн |
100+ | 9.07 грн |
139+ | 6.93 грн |
382+ | 6.51 грн |
1000+ | 6.35 грн |
PMEG10020AELPX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
товар відсутній
PMEG10020AELR-QX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; 5ns; CFP3,SOD123W; 2.14W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; 5ns; CFP3,SOD123W; 2.14W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній