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PMCM6501VPEZ NEXPERIA PMCM6501VPE.pdf PMCM6501VPEZ SMD P channel transistors
товар відсутній
PMCM650CUNEZ NEXPERIA PMCM650CUNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 4500 шт
товар відсутній
PMCPB5530X,115 NEXPERIA PMCPB5530X.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMCXB1000UEZ NEXPERIA PMCXB1000UE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMCXB900UELZ NEXPERIA PMCXB900UEL.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMCXB900UEZ NEXPERIA PMCXB900UE.pdf NEXP-S-A0003513061-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMD2001D,115 PMD2001D,115 NEXPERIA PMD2001D.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
PMD3001D,115 PMD3001D,115 NEXPERIA PMD3001D.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Collector current: 1A
Collector-emitter voltage: 40V
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
PMDPB30XN,115 NEXPERIA PMDPB30XN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB30XNZ NEXPERIA PMDPB30XN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB55XP,115 NEXPERIA PMDPB55XP.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB56XNEAX NEXPERIA PMDPB56XNEA.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDPB58UPE,115 NEXPERIA PMDPB58UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDPB70XP,115 NEXPERIA PMDPB70XP.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB70XPE,115 NEXPERIA PMDPB70XPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB80XP,115 NEXPERIA PMDPB80XP.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB85UPE,115 NEXPERIA PMDPB85UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB95XNE2X NEXPERIA PMDPB95XNE2.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDT290UCE,115 NEXPERIA PMDT290UCE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDT290UCEH NEXPERIA PMDT290UCE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDT290UNE,115 NEXPERIA PMDT290UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDXB1200UPEZ NEXPERIA PMDXB1200UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.26A
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB550UNEZ NEXPERIA PMDXB550UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB600UNELZ NEXPERIA PMDXB600UNEL.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB600UNEZ NEXPERIA PMDXB600UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB950UPEZ NEXPERIA PMDXB950UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
PMEG030V030EPDZ NEXPERIA PMEG030V030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 495pF
Max. forward voltage: 0.45V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG030V050EPDZ NEXPERIA PMEG030V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG040V030EPDZ NEXPERIA PMEG040V030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.34V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 18mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
PMEG040V050EPDZ NEXPERIA PMEG040V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T030EPDZ PMEG045T030EPDZ NEXPERIA PMEG045T030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 4.2A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.325V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
на замовлення 1496 шт:
термін постачання 7-14 дні (днів)
5+62.16 грн
10+ 27.83 грн
25+ 24.16 грн
53+ 18.3 грн
144+ 17.31 грн
Мінімальне замовлення: 5
PMEG045T050EPDZ NEXPERIA PMEG045T050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 7A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.39V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
товар відсутній
PMEG045T100EPDAZ NEXPERIA PMEG045T100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T100EPDZ NEXPERIA PMEG045T100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T100EPEZ NEXPERIA PMEG045T100EPE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 1.4nF
Max. forward voltage: 0.545V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T150EIPDZ NEXPERIA PMEG045T150EIPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 720pF
Max. forward voltage: 0.57V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T150EPDAZ NEXPERIA PMEG045T150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T150EPDZ NEXPERIA PMEG045T150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V050EPDAZ NEXPERIA PMEG045V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG045V050EPDZ NEXPERIA PMEG045V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V100EPDAZ NEXPERIA PMEG045V100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG045V100EPDZ NEXPERIA PMEG045V100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 14A; 17ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 14A
Reverse recovery time: 17ns
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.33V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
товар відсутній
PMEG045V150EPDAZ NEXPERIA PMEG045V150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V150EPDZ NEXPERIA PMEG045V150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG050T150EPDZ NEXPERIA PMEG050T150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG050V030EPDZ NEXPERIA PMEG050V030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG050V150EPDAZ NEXPERIA PMEG050V150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG050V150EPDZ NEXPERIA PMEG050V150EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 21A; 20ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 21A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 570pF
Max. forward voltage: 0.38V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 240A
кількість в упаковці: 1 шт
товар відсутній
PMEG060T050ELPE-QZ NEXPERIA PMEG060T050ELPE-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
PMEG060T050ELPEZ NEXPERIA PMEG060T050ELPE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
кількість в упаковці: 5000 шт
товар відсутній
PMEG060T100CLPEZ NEXPERIA PMEG060T100CLPE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.74V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 150A
кількість в упаковці: 5000 шт
товар відсутній
PMEG060V030EPDZ NEXPERIA PMEG060V030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 120pF
Max. forward voltage: 0.4V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 34mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V050EPDAZ NEXPERIA PMEG060V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG060V050EPDZ NEXPERIA PMEG060V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 7A; 12ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Reverse recovery time: 12ns
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 8mA
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V100EPDAZ NEXPERIA PMEG060V100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V100EPDZ
+1
PMEG060V100EPDZ NEXPERIA PMEG060V100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
на замовлення 2634 шт:
термін постачання 7-14 дні (днів)
4+68.02 грн
7+ 41.36 грн
25+ 35.87 грн
35+ 28.03 грн
94+ 26.38 грн
Мінімальне замовлення: 4
PMEG10010ELR-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.15µA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
PMEG10010ELRX PMEG10010ELRX NEXPERIA PMEG10010ELR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.68V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.5mA
Max. forward impulse current: 50A
кількість в упаковці: 1 шт
на замовлення 1879 шт:
термін постачання 7-14 дні (днів)
9+31.08 грн
16+ 16.95 грн
25+ 13.03 грн
100+ 9.07 грн
139+ 6.93 грн
382+ 6.51 грн
1000+ 6.35 грн
Мінімальне замовлення: 9
PMEG10020AELPX NEXPERIA PMEG10020AELP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
товар відсутній
PMEG10020AELR-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; 5ns; CFP3,SOD123W; 2.14W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
PMCM6501VPEZ PMCM6501VPE.pdf
Виробник: NEXPERIA
PMCM6501VPEZ SMD P channel transistors
товар відсутній
PMCM650CUNEZ PMCM650CUNE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 4500 шт
товар відсутній
PMCPB5530X,115 PMCPB5530X.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMCXB1000UEZ PMCXB1000UE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMCXB900UELZ PMCXB900UEL.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMCXB900UEZ PMCXB900UE.pdf NEXP-S-A0003513061-1.pdf?t.download=true&u=5oefqw
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMD2001D,115 PMD2001D.pdf
PMD2001D,115
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
PMD3001D,115 PMD3001D.pdf
PMD3001D,115
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Collector current: 1A
Collector-emitter voltage: 40V
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
PMDPB30XN,115 PMDPB30XN.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB30XNZ PMDPB30XN.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB55XP,115 PMDPB55XP.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB56XNEAX PMDPB56XNEA.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDPB58UPE,115 PMDPB58UPE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDPB70XP,115 PMDPB70XP.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB70XPE,115 PMDPB70XPE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB80XP,115 PMDPB80XP.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB85UPE,115 PMDPB85UPE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMDPB95XNE2X PMDPB95XNE2.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMDT290UCE,115 PMDT290UCE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDT290UCEH PMDT290UCE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDT290UNE,115 PMDT290UNE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
PMDXB1200UPEZ PMDXB1200UPE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.26A
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB550UNEZ PMDXB550UNE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB600UNELZ PMDXB600UNEL.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB600UNEZ PMDXB600UNE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
PMDXB950UPEZ PMDXB950UPE.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
PMEG030V030EPDZ PMEG030V030EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 495pF
Max. forward voltage: 0.45V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG030V050EPDZ PMEG030V050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG040V030EPDZ PMEG040V030EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.34V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 18mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
PMEG040V050EPDZ PMEG040V050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T030EPDZ PMEG045T030EPD.pdf
PMEG045T030EPDZ
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 4.2A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.325V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
на замовлення 1496 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
5+62.16 грн
10+ 27.83 грн
25+ 24.16 грн
53+ 18.3 грн
144+ 17.31 грн
Мінімальне замовлення: 5
PMEG045T050EPDZ PMEG045T050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 7A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.39V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 9mA
Max. forward impulse current: 45A
кількість в упаковці: 1 шт
товар відсутній
PMEG045T100EPDAZ PMEG045T100EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T100EPDZ PMEG045T100EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.545V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T100EPEZ PMEG045T100EPE.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 1.4nF
Max. forward voltage: 0.545V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T150EIPDZ PMEG045T150EIPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 720pF
Max. forward voltage: 0.57V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 130A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045T150EPDAZ PMEG045T150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 5000 шт
товар відсутній
PMEG045T150EPDZ PMEG045T150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 210A
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V050EPDAZ PMEG045V050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG045V050EPDZ PMEG045V050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V100EPDAZ PMEG045V100EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG045V100EPDZ PMEG045V100EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 14A; 17ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 14A
Reverse recovery time: 17ns
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.33V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.6mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
товар відсутній
PMEG045V150EPDAZ PMEG045V150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG045V150EPDZ PMEG045V150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG050T150EPDZ PMEG050T150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.55V
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG050V030EPDZ PMEG050V030EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
PMEG050V150EPDAZ PMEG050V150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 15A; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG050V150EPDZ PMEG050V150EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 21A; 20ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 21A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 570pF
Max. forward voltage: 0.38V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 240A
кількість в упаковці: 1 шт
товар відсутній
PMEG060T050ELPE-QZ PMEG060T050ELPE-Q.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
PMEG060T050ELPEZ PMEG060T050ELPE.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 80A
кількість в упаковці: 5000 шт
товар відсутній
PMEG060T100CLPEZ PMEG060T100CLPE.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; CFP15B,SOT1289B
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.74V
Case: CFP15B; SOT1289B
Kind of package: reel; tape
Max. forward impulse current: 150A
кількість в упаковці: 5000 шт
товар відсутній
PMEG060V030EPDZ PMEG060V030EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 120pF
Max. forward voltage: 0.4V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 34mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V050EPDAZ PMEG060V050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: CFP15; SOT1289
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товар відсутній
PMEG060V050EPDZ PMEG060V050EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 7A; 12ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Reverse recovery time: 12ns
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 8mA
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V100EPDAZ PMEG060V100EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
товар відсутній
PMEG060V100EPDZ PMEG060V100EPD.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 14A; 16ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Reverse recovery time: 16ns
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.435V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 0.7mA
Max. forward impulse current: 210A
кількість в упаковці: 1 шт
на замовлення 2634 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+68.02 грн
7+ 41.36 грн
25+ 35.87 грн
35+ 28.03 грн
94+ 26.38 грн
Мінімальне замовлення: 4
PMEG10010ELR-QX
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.15µA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
PMEG10010ELRX PMEG10010ELR.pdf
PMEG10010ELRX
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1.4A; 3.7ns; CFP3,SOD123W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.4A
Reverse recovery time: 3.7ns
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.68V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 0.5mA
Max. forward impulse current: 50A
кількість в упаковці: 1 шт
на замовлення 1879 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
9+31.08 грн
16+ 16.95 грн
25+ 13.03 грн
100+ 9.07 грн
139+ 6.93 грн
382+ 6.51 грн
1000+ 6.35 грн
Мінімальне замовлення: 9
PMEG10020AELPX PMEG10020AELP.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 50A
кількість в упаковці: 3000 шт
товар відсутній
PMEG10020AELR-QX
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; 5ns; CFP3,SOD123W; 2.14W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 135pF
Max. forward voltage: 0.77V
Case: CFP3; SOD123W
Kind of package: reel; tape
Leakage current: 1mA
Max. forward impulse current: 50A
Power dissipation: 2.14W
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
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