Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMH400UNEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A Mounting: SMD Case: DFN0606-3; SOT8001 Kind of package: reel; tape Pulsed drain current: 3A Gate charge: 930pC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 570mA Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 825mΩ кількість в упаковці: 10000 шт |
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PMH600UNEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Technology: Trench Pulsed drain current: 3.2A Gate-source voltage: ±8V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 500mA On-state resistance: 1Ω Gate charge: 310pC Case: DFN0606-3; SOT8001 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate |
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PMH950UPEH | NEXPERIA | PMH950UPEH SMD P channel transistors |
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PMLL4148L,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Features of semiconductor devices: fast switching Mounting: SMD Case: SOD80C Capacitance: 4pF Max. off-state voltage: 100V Max. load current: 0.45A Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching кількість в упаковці: 10 шт |
на замовлення 8580 шт: термін постачання 7-14 дні (днів) |
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PMLL4148L,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Features of semiconductor devices: fast switching Mounting: SMD Case: SOD80C Capacitance: 4pF Max. off-state voltage: 100V Max. load current: 0.45A Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching кількість в упаковці: 10000 шт |
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PMLL4153,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A Features of semiconductor devices: fast switching Mounting: SMD Case: SOD80C Capacitance: 4pF Max. off-state voltage: 75V Max. load current: 0.45A Max. forward voltage: 0.88V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching кількість в упаковці: 5 шт |
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PMLL4448,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4075 шт: термін постачання 7-14 дні (днів) |
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PMLL4448,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 10000 шт |
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PMMT491A,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 2A Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry кількість в упаковці: 5 шт |
на замовлення 3555 шт: термін постачання 7-14 дні (днів) |
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PMMT591A,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 2A Current gain: 300...800 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz кількість в упаковці: 5 шт |
на замовлення 2650 шт: термін постачання 7-14 дні (днів) |
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PMN100EPAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Pulsed drain current: -10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMN120ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMN16XNEX | NEXPERIA | PMN16XNEX SMD N channel transistors |
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PMN20ENAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A Mounting: SMD Pulsed drain current: 25A Gate charge: 17nC Polarisation: unipolar Technology: Trench Drain current: 4.4A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC74; SOT457; TSOP6 On-state resistance: 44mΩ кількість в упаковці: 3000 шт |
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PMN230ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A Mounting: SMD Kind of package: reel; tape Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 7.1A Gate charge: 3.8nC Case: SC74; SOT457; TSOP6 Drain-source voltage: 60V Drain current: 1.1A On-state resistance: 482mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
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PMN25ENEAX | NEXPERIA | PMN25ENEAX SMD N channel transistors |
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PMN25ENEH | NEXPERIA | PMN25ENEH SMD N channel transistors |
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PMN25ENEX | NEXPERIA | PMN25ENEX SMD N channel transistors |
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PMN30ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.8A Pulsed drain current: 22A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMN30UNX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.9A Pulsed drain current: 18A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 61mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMN30XPAX | NEXPERIA | PMN30XPAX SMD P channel transistors |
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PMN30XPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
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PMN30XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -21A Power dissipation: 0.55W Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PMN40ENAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 93mΩ Pulsed drain current: 17A Gate charge: 15nC Polarisation: unipolar кількість в упаковці: 3000 шт |
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PMN40SNAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 76mΩ Pulsed drain current: 19A Gate charge: 14nC Polarisation: unipolar кількість в упаковці: 3000 шт |
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PMN42XPEAH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMN42XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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PMN48XP,115 | NEXPERIA | PMN48XP.115 SMD P channel transistors |
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PMN48XP,125 | NEXPERIA | PMN48XP.125 SMD P channel transistors |
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PMN48XPAX | NEXPERIA | PMN48XPAX SMD P channel transistors |
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PMN50EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
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PMN52XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -15A Case: SC74; SOT457; TSOP6 On-state resistance: 91mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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PMN55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Pulsed drain current: 14A Gate charge: 13.2nC Polarisation: unipolar Technology: Trench Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC74; SOT457; TSOP6 On-state resistance: 0.13Ω Mounting: SMD кількість в упаковці: 3000 шт |
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PMN55ENEH | NEXPERIA | PMN55ENEH SMD N channel transistors |
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PMN55ENEX | NEXPERIA | PMN55ENEX SMD N channel transistors |
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PMN70XPX | NEXPERIA | PMN70XPX SMD P channel transistors |
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PMP4201V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz кількість в упаковці: 4000 шт |
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PMP4501V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry кількість в упаковці: 4000 шт |
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PMP5201V,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT666 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 1 шт |
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PMP5201Y,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 1 шт |
на замовлення 1645 шт: термін постачання 7-14 дні (днів) |
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PMP5201Y,135 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 10000 шт |
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PMP5501V,115 | NEXPERIA | PMP5501V.115 PNP SMD transistors |
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PMP5501Y,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 1 шт |
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PMPB100XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -13A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: -20V Drain current: -2A On-state resistance: 191mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
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PMPB10XNE,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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PMPB10XNEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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PMPB10XNX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 30nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 38A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 30V Drain current: 6A On-state resistance: 22mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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PMPB11EN,115 | NEXPERIA | PMPB11EN.115 SMD N channel transistors |
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PMPB12UNEAX | NEXPERIA | PMPB12UNEAX SMD N channel transistors |
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PMPB12UNEX | NEXPERIA | PMPB12UNEX SMD N channel transistors |
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PMPB13XNE,115 | NEXPERIA | PMPB13XNE.115 SMD N channel transistors |
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PMPB13XNEAX | NEXPERIA | PMPB13XNEAX SMD N channel transistors |
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PMPB14XNX | NEXPERIA | PMPB14XNX SMD N channel transistors |
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PMPB14XPX | NEXPERIA | PMPB14XPX SMD P channel transistors |
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PMPB15XN,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.6A Pulsed drain current: 24A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 20.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMPB15XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PMPB15XPAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMPB15XPH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
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PMPB16EPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.7A Pulsed drain current: -30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±25V On-state resistance: 34mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
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PMPB19XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Pulsed drain current: -30A Gate charge: 43.2nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 On-state resistance: 33mΩ Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
PMH400UNEH |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Mounting: SMD
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Pulsed drain current: 3A
Gate charge: 930pC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 570mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 825mΩ
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Mounting: SMD
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Pulsed drain current: 3A
Gate charge: 930pC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 570mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 825mΩ
кількість в упаковці: 10000 шт
товар відсутній
PMH600UNEH |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
товар відсутній
PMLL4148L,115 |
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10 шт
на замовлення 8580 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
60+ | 5.19 грн |
130+ | 2.11 грн |
500+ | 1.81 грн |
700+ | 1.38 грн |
1910+ | 1.3 грн |
PMLL4148L,135 |
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10000 шт
товар відсутній
PMLL4153,115 |
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 5 шт
товар відсутній
PMLL4448,115 |
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4075 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 10.66 грн |
34+ | 7.71 грн |
43+ | 5.77 грн |
100+ | 3.3 грн |
250+ | 2.08 грн |
500+ | 1.87 грн |
675+ | 1.42 грн |
PMLL4448,135 |
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
PMMT491A,215 |
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3555 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.5 грн |
40+ | 7.02 грн |
100+ | 6.1 грн |
210+ | 4.58 грн |
575+ | 4.33 грн |
PMMT591A,215 |
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 5 шт
на замовлення 2650 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.23 грн |
40+ | 6.89 грн |
100+ | 5.97 грн |
205+ | 4.78 грн |
555+ | 4.52 грн |
PMN100EPAX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN120ENEX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN20ENAX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Mounting: SMD
Pulsed drain current: 25A
Gate charge: 17nC
Polarisation: unipolar
Technology: Trench
Drain current: 4.4A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 44mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Mounting: SMD
Pulsed drain current: 25A
Gate charge: 17nC
Polarisation: unipolar
Technology: Trench
Drain current: 4.4A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 44mΩ
кількість в упаковці: 3000 шт
товар відсутній
PMN230ENEAX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN30ENEAX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN30UNX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN30XPEX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN30XPX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PMN40ENAX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Pulsed drain current: 17A
Gate charge: 15nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Pulsed drain current: 17A
Gate charge: 15nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN40SNAX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN42XPEAH |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN42XPEAX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
PMN50EPEX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN52XPX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
PMN55ENEAX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13.2nC
Polarisation: unipolar
Technology: Trench
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 0.13Ω
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13.2nC
Polarisation: unipolar
Technology: Trench
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 0.13Ω
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
PMP4201V,115 |
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 4000 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 4000 шт
товар відсутній
PMP4501V,115 |
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 4000 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 4000 шт
товар відсутній
PMP5201V,115 |
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
PMP5201Y,115 |
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
на замовлення 1645 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 23.97 грн |
25+ | 17.47 грн |
72+ | 13.14 грн |
198+ | 12.42 грн |
PMP5201Y,135 |
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 10000 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 10000 шт
товар відсутній
PMP5501Y,115 |
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
PMPB100XPEAX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNE,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNEZ |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XN,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 24A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 24A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XP,115 |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PMPB15XPAX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XPH |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB16EPX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB19XP,115 |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній