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PMH400UNEH NEXPERIA PMH400UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Mounting: SMD
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Pulsed drain current: 3A
Gate charge: 930pC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 570mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 825mΩ
кількість в упаковці: 10000 шт
товар відсутній
PMH600UNEH NEXPERIA PMH600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance:
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
товар відсутній
PMH950UPEH NEXPERIA PMH950UPE.pdf PMH950UPEH SMD P channel transistors
товар відсутній
PMLL4148L,115 PMLL4148L,115 NEXPERIA PMLL4148L_PMLL4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10 шт
на замовлення 8580 шт:
термін постачання 7-14 дні (днів)
60+5.19 грн
130+ 2.11 грн
500+ 1.81 грн
700+ 1.38 грн
1910+ 1.3 грн
Мінімальне замовлення: 60
PMLL4148L,135 PMLL4148L,135 NEXPERIA PMLL4148L_PMLL4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10000 шт
товар відсутній
PMLL4153,115 PMLL4153,115 NEXPERIA PMLL4153.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 5 шт
товар відсутній
PMLL4448,115 PMLL4448,115 NEXPERIA PMLL4148L_PMLL4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4075 шт:
термін постачання 7-14 дні (днів)
25+10.66 грн
34+ 7.71 грн
43+ 5.77 грн
100+ 3.3 грн
250+ 2.08 грн
500+ 1.87 грн
675+ 1.42 грн
Мінімальне замовлення: 25
PMLL4448,135 PMLL4448,135 NEXPERIA PMLL4148L_PMLL4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
PMMT491A,215 PMMT491A,215 NEXPERIA PMMT491A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3555 шт:
термін постачання 7-14 дні (днів)
20+13.5 грн
40+ 7.02 грн
100+ 6.1 грн
210+ 4.58 грн
575+ 4.33 грн
Мінімальне замовлення: 20
PMMT591A,215 PMMT591A,215 NEXPERIA PMMT591A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 5 шт
на замовлення 2650 шт:
термін постачання 7-14 дні (днів)
25+13.23 грн
40+ 6.89 грн
100+ 5.97 грн
205+ 4.78 грн
555+ 4.52 грн
Мінімальне замовлення: 25
PMN100EPAX PMN100EPAX NEXPERIA PMN100EPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN120ENEX PMN120ENEX NEXPERIA PMN120ENE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN16XNEX NEXPERIA PMN16XNE.pdf PMN16XNEX SMD N channel transistors
товар відсутній
PMN20ENAX PMN20ENAX NEXPERIA PMN20ENA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Mounting: SMD
Pulsed drain current: 25A
Gate charge: 17nC
Polarisation: unipolar
Technology: Trench
Drain current: 4.4A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 44mΩ
кількість в упаковці: 3000 шт
товар відсутній
PMN230ENEAX PMN230ENEAX NEXPERIA PMN230ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN25ENEAX NEXPERIA PMN25ENEA.pdf PMN25ENEAX SMD N channel transistors
товар відсутній
PMN25ENEH NEXPERIA PMN25ENE.pdf PMN25ENEH SMD N channel transistors
товар відсутній
PMN25ENEX NEXPERIA PMN25ENE.pdf PMN25ENEX SMD N channel transistors
товар відсутній
PMN30ENEAX PMN30ENEAX NEXPERIA PMN30ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN30UNX PMN30UNX NEXPERIA PMN30UN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN30XPAX NEXPERIA PMN30XPA.pdf PMN30XPAX SMD P channel transistors
товар відсутній
PMN30XPEX PMN30XPEX NEXPERIA PMN30XPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN30XPX PMN30XPX NEXPERIA PMN30XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PMN40ENAX PMN40ENAX NEXPERIA PMN40ENA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Pulsed drain current: 17A
Gate charge: 15nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN40SNAX PMN40SNAX NEXPERIA PMN40SNA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN42XPEAH PMN42XPEAH NEXPERIA PMN42XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN42XPEAX PMN42XPEAX NEXPERIA PMN42XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
PMN48XP,115 NEXPERIA PMN48XP.pdf PMN48XP.115 SMD P channel transistors
товар відсутній
PMN48XP,125 NEXPERIA PMN48XP.pdf PMN48XP.125 SMD P channel transistors
товар відсутній
PMN48XPAX NEXPERIA PMN48XP.pdf PMN48XPA.pdf PMN48XPAX SMD P channel transistors
товар відсутній
PMN50EPEX PMN50EPEX NEXPERIA PMN50EPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN52XPX PMN52XPX NEXPERIA PMN52XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
PMN55ENEAX PMN55ENEAX NEXPERIA PMN55ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13.2nC
Polarisation: unipolar
Technology: Trench
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 0.13Ω
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
PMN55ENEH NEXPERIA PMN55ENE.pdf PMN55ENEH SMD N channel transistors
товар відсутній
PMN55ENEX NEXPERIA PMN55ENE.pdf PMN55ENEX SMD N channel transistors
товар відсутній
PMN70XPX NEXPERIA PMN70XP.pdf PMN70XPX SMD P channel transistors
товар відсутній
PMP4201V,115 NEXPERIA PMP4201V_G_Y.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 4000 шт
товар відсутній
PMP4501V,115 NEXPERIA PMP4501V_G_Y.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 4000 шт
товар відсутній
PMP5201V,115 NEXPERIA PMP5201V.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
PMP5201Y,115 PMP5201Y,115 NEXPERIA PMP5201Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
на замовлення 1645 шт:
термін постачання 7-14 дні (днів)
12+23.97 грн
25+ 17.47 грн
72+ 13.14 грн
198+ 12.42 грн
Мінімальне замовлення: 12
PMP5201Y,135 PMP5201Y,135 NEXPERIA PMP5201Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 10000 шт
товар відсутній
PMP5501V,115 NEXPERIA PMP5501V_G_Y.pdf PMP5501V.115 PNP SMD transistors
товар відсутній
PMP5501Y,115 PMP5501Y,115 NEXPERIA PMP5501Y.pdf PHGLS19178-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
PMPB100XPEAX NEXPERIA Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNE,115 NEXPERIA PMPB10XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNEZ NEXPERIA PMPB10XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNX NEXPERIA PMPB10XN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB11EN,115 NEXPERIA PMPB11EN.pdf PMPB11EN.115 SMD N channel transistors
товар відсутній
PMPB12UNEAX NEXPERIA PMPB12UNEA.pdf PMPB12UNEAX SMD N channel transistors
товар відсутній
PMPB12UNEX NEXPERIA PMPB12UNE.pdf PMPB12UNEX SMD N channel transistors
товар відсутній
PMPB13XNE,115 NEXPERIA PMPB13XNE.pdf PMPB13XNE.115 SMD N channel transistors
товар відсутній
PMPB13XNEAX NEXPERIA PMPB13XNEAX SMD N channel transistors
товар відсутній
PMPB14XNX NEXPERIA PMPB14XN.pdf PMPB14XNX SMD N channel transistors
товар відсутній
PMPB14XPX NEXPERIA PMPB14XP.pdf PMPB14XPX SMD P channel transistors
товар відсутній
PMPB15XN,115 NEXPERIA Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 24A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XP,115 NEXPERIA PMPB15XP.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PMPB15XPAX NEXPERIA PMPB15XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XPH NEXPERIA PMPB15XP.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB16EPX NEXPERIA PMPB16EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB19XP,115 NEXPERIA PMPB19XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
PMH400UNEH PMH400UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Mounting: SMD
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Pulsed drain current: 3A
Gate charge: 930pC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 570mA
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 825mΩ
кількість в упаковці: 10000 шт
товар відсутній
PMH600UNEH PMH600UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance:
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
товар відсутній
PMH950UPEH PMH950UPE.pdf
Виробник: NEXPERIA
PMH950UPEH SMD P channel transistors
товар відсутній
PMLL4148L,115 PMLL4148L_PMLL4448.pdf
PMLL4148L,115
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10 шт
на замовлення 8580 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
60+5.19 грн
130+ 2.11 грн
500+ 1.81 грн
700+ 1.38 грн
1910+ 1.3 грн
Мінімальне замовлення: 60
PMLL4148L,135 PMLL4148L_PMLL4448.pdf
PMLL4148L,135
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 100V
Max. load current: 0.45A
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 10000 шт
товар відсутній
PMLL4153,115 PMLL4153.pdf
PMLL4153,115
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 5 шт
товар відсутній
PMLL4448,115 PMLL4148L_PMLL4448.pdf
PMLL4448,115
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4075 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+10.66 грн
34+ 7.71 грн
43+ 5.77 грн
100+ 3.3 грн
250+ 2.08 грн
500+ 1.87 грн
675+ 1.42 грн
Мінімальне замовлення: 25
PMLL4448,135 PMLL4148L_PMLL4448.pdf
PMLL4448,135
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
PMMT491A,215 PMMT491A.pdf
PMMT491A,215
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3555 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
20+13.5 грн
40+ 7.02 грн
100+ 6.1 грн
210+ 4.58 грн
575+ 4.33 грн
Мінімальне замовлення: 20
PMMT591A,215 PMMT591A.pdf
PMMT591A,215
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 5 шт
на замовлення 2650 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+13.23 грн
40+ 6.89 грн
100+ 5.97 грн
205+ 4.78 грн
555+ 4.52 грн
Мінімальне замовлення: 25
PMN100EPAX PMN100EPA.pdf
PMN100EPAX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN120ENEX PMN120ENE.pdf
PMN120ENEX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN16XNEX PMN16XNE.pdf
Виробник: NEXPERIA
PMN16XNEX SMD N channel transistors
товар відсутній
PMN20ENAX PMN20ENA.pdf
PMN20ENAX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Mounting: SMD
Pulsed drain current: 25A
Gate charge: 17nC
Polarisation: unipolar
Technology: Trench
Drain current: 4.4A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 44mΩ
кількість в упаковці: 3000 шт
товар відсутній
PMN230ENEAX PMN230ENEA.pdf
PMN230ENEAX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN25ENEAX PMN25ENEA.pdf
Виробник: NEXPERIA
PMN25ENEAX SMD N channel transistors
товар відсутній
PMN25ENEH PMN25ENE.pdf
Виробник: NEXPERIA
PMN25ENEH SMD N channel transistors
товар відсутній
PMN25ENEX PMN25ENE.pdf
Виробник: NEXPERIA
PMN25ENEX SMD N channel transistors
товар відсутній
PMN30ENEAX PMN30ENEA.pdf
PMN30ENEAX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN30UNX PMN30UN.pdf
PMN30UNX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN30XPAX PMN30XPA.pdf
Виробник: NEXPERIA
PMN30XPAX SMD P channel transistors
товар відсутній
PMN30XPEX PMN30XPE.pdf
PMN30XPEX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN30XPX PMN30XP.pdf
PMN30XPX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PMN40ENAX PMN40ENA.pdf
PMN40ENAX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Pulsed drain current: 17A
Gate charge: 15nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN40SNAX PMN40SNA.pdf
PMN40SNAX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN42XPEAH PMN42XPEA.pdf
PMN42XPEAH
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
PMN42XPEAX PMN42XPEA.pdf
PMN42XPEAX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
PMN48XP,115 PMN48XP.pdf
Виробник: NEXPERIA
PMN48XP.115 SMD P channel transistors
товар відсутній
PMN48XP,125 PMN48XP.pdf
Виробник: NEXPERIA
PMN48XP.125 SMD P channel transistors
товар відсутній
PMN48XPAX PMN48XP.pdf PMN48XPA.pdf
Виробник: NEXPERIA
PMN48XPAX SMD P channel transistors
товар відсутній
PMN50EPEX PMN50EPE.pdf
PMN50EPEX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
PMN52XPX PMN52XP.pdf
PMN52XPX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
PMN55ENEAX PMN55ENEA.pdf
PMN55ENEAX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13.2nC
Polarisation: unipolar
Technology: Trench
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 0.13Ω
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
PMN55ENEH PMN55ENE.pdf
Виробник: NEXPERIA
PMN55ENEH SMD N channel transistors
товар відсутній
PMN55ENEX PMN55ENE.pdf
Виробник: NEXPERIA
PMN55ENEX SMD N channel transistors
товар відсутній
PMN70XPX PMN70XP.pdf
Виробник: NEXPERIA
PMN70XPX SMD P channel transistors
товар відсутній
PMP4201V,115 PMP4201V_G_Y.pdf
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 4000 шт
товар відсутній
PMP4501V,115 PMP4501V_G_Y.pdf
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 4000 шт
товар відсутній
PMP5201V,115 PMP5201V.pdf
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
PMP5201Y,115 PMP5201Y.pdf
PMP5201Y,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
на замовлення 1645 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
12+23.97 грн
25+ 17.47 грн
72+ 13.14 грн
198+ 12.42 грн
Мінімальне замовлення: 12
PMP5201Y,135 PMP5201Y.pdf
PMP5201Y,135
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 10000 шт
товар відсутній
PMP5501V,115 PMP5501V_G_Y.pdf
Виробник: NEXPERIA
PMP5501V.115 PNP SMD transistors
товар відсутній
PMP5501Y,115 PMP5501Y.pdf PHGLS19178-1.pdf?t.download=true&u=5oefqw
PMP5501Y,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
PMPB100XPEAX
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNE,115 PMPB10XNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNEZ PMPB10XNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB10XNX PMPB10XN.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
PMPB11EN,115 PMPB11EN.pdf
Виробник: NEXPERIA
PMPB11EN.115 SMD N channel transistors
товар відсутній
PMPB12UNEAX PMPB12UNEA.pdf
Виробник: NEXPERIA
PMPB12UNEAX SMD N channel transistors
товар відсутній
PMPB12UNEX PMPB12UNE.pdf
Виробник: NEXPERIA
PMPB12UNEX SMD N channel transistors
товар відсутній
PMPB13XNE,115 PMPB13XNE.pdf
Виробник: NEXPERIA
PMPB13XNE.115 SMD N channel transistors
товар відсутній
PMPB13XNEAX
Виробник: NEXPERIA
PMPB13XNEAX SMD N channel transistors
товар відсутній
PMPB14XNX PMPB14XN.pdf
Виробник: NEXPERIA
PMPB14XNX SMD N channel transistors
товар відсутній
PMPB14XPX PMPB14XP.pdf
Виробник: NEXPERIA
PMPB14XPX SMD P channel transistors
товар відсутній
PMPB15XN,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 24A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XP,115 PMPB15XP.PDF
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PMPB15XPAX PMPB15XPA.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB15XPH PMPB15XP.PDF
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB16EPX PMPB16EP.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
PMPB19XP,115 PMPB19XP.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
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