| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMV45EN2R | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1115mW Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 7892 шт: термін постачання 7-14 дні (днів) |
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PMV45EN2VL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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PMV48XP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 3120 шт: термін постачання 7-14 дні (днів) |
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PMV48XPA2R | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 78mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMV48XPAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: SOT23; TO236AB On-state resistance: 80mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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PMV48XPVL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
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PMV50ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A Pulsed drain current: 5.5A Gate charge: 10nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 69mΩ Mounting: SMD кількість в упаковці: 3000 шт |
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PMV50UPE,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -12.8A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 96mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMV50XNEAR | NEXPERIA |
PMV50XNEAR SMD N channel transistors |
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PMV50XPR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -14.5A Case: SOT23; TO236AB On-state resistance: 86mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2094 шт: термін постачання 7-14 дні (днів) |
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| PMV52ENEAR | NEXPERIA |
PMV52ENEAR SMD N channel transistors |
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| PMV55ENEAR | NEXPERIA |
PMV55ENEAR SMD N channel transistors |
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| PMV60ENEAR | NEXPERIA |
PMV60ENEAR SMD N channel transistors |
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PMV65ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 1.7A Pulsed drain current: 11A Case: SOT23; TO236AB On-state resistance: 136mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level кількість в упаковці: 1 шт |
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| PMV65UNEAR | NEXPERIA |
PMV65UNEAR SMD N channel transistors |
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PMV65UNER | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.8A Pulsed drain current: 11A Case: SOT23; TO236AB On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 13735 шт: термін постачання 7-14 дні (днів) |
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PMV65XP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Power dissipation: 833mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 135mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 32189 шт: термін постачання 7-14 дні (днів) |
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PMV65XPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -120mA Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2067 шт: термін постачання 7-14 дні (днів) |
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PMV65XPER | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -12A Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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PMV65XPVL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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PMV75UP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -10A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 146mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMV88ENEAR | NEXPERIA |
PMV88ENEAR SMD N channel transistors |
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PMV90ENER | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.9A Pulsed drain current: 12A Case: SOT23; TO236AB On-state resistance: 0.118Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level кількість в упаковці: 1 шт |
на замовлення 1159 шт: термін постачання 7-14 дні (днів) |
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| PMXB120EPEZ | NEXPERIA |
PMXB120EPEZ SMD P channel transistors |
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| PMXB350UPEZ | NEXPERIA |
PMXB350UPEZ SMD P channel transistors |
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| PMXB360ENEAZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A Polarisation: unipolar Drain-source voltage: 80V Drain current: 0.7A On-state resistance: 887mΩ Type of transistor: N-MOSFET Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4.4A Mounting: SMD Case: DFN1010D-3; SOT1215 кількість в упаковці: 5000 шт |
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| PMXB40UNEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 12V Drain current: 2.5A Pulsed drain current: 15A Case: DFN1010D-3; SOT1215 Gate-source voltage: ±8V On-state resistance: 67mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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| PMXB43UNEZ | NEXPERIA |
PMXB43UNEZ SMD N channel transistors |
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| PMXB56ENZ | NEXPERIA |
PMXB56ENZ SMD N channel transistors |
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| PMXB65ENEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12.8A Case: DFN1010D-3; SOT1215 Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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| PMXB65UPEZ | NEXPERIA |
PMXB65UPEZ SMD P channel transistors |
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| PMXB75UPEZ | NEXPERIA |
PMXB75UPEZ SMD P channel transistors |
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| PMZ1000UN,315 | NEXPERIA |
PMZ1000UN.315 SMD N channel transistors |
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| PMZ1200UPEYL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A Drain-source voltage: -30V Drain current: -260mA On-state resistance: 2.4Ω Gate charge: 1.2nC Case: DFN1006-3; SOT883 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced Technology: Trench Pulsed drain current: -1.7A Gate-source voltage: ±8V Type of transistor: P-MOSFET |
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| PMZ130UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.6nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A Mounting: SMD Case: DFN1006-3; SOT883 Drain-source voltage: 20V Drain current: 1.2A On-state resistance: 0.22Ω Type of transistor: N-MOSFET кількість в упаковці: 10000 шт |
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| PMZ200UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 5A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 410mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 10000 шт |
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| PMZ290UNE2YL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 800mA Pulsed drain current: 4A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 475mΩ Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 10000 шт |
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| PMZ320UPEYL | NEXPERIA |
PMZ320UPEYL SMD P channel transistors |
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| PMZ350UPEYL | NEXPERIA |
PMZ350UPEYL SMD P channel transistors |
на замовлення 9840 шт: термін постачання 7-14 дні (днів) |
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| PMZ370UNEYL | NEXPERIA |
PMZ370UNEYL SMD N channel transistors |
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| PMZ390UN,315 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.3nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Mounting: SMD Case: DFN1006-3; SOT883 Drain-source voltage: 30V Drain current: 0.6A On-state resistance: 0.79Ω кількість в упаковці: 10000 шт |
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| PMZ550UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.37A Pulsed drain current: 2.3A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 1.17Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 10000 шт |
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| PMZ600UNELYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD кількість в упаковці: 10000 шт |
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| PMZ600UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD кількість в упаковці: 10000 шт |
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| PMZ600UNEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006-3; SOT883 On-state resistance: 1Ω Mounting: SMD кількість в упаковці: 10000 шт |
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| PMZ950UPELYL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET Mounting: SMD Case: DFN1006-3; SOT883 On-state resistance: 2.1Ω Kind of package: reel; tape Technology: Trench Drain-source voltage: -20V Drain current: -300mA Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2A кількість в упаковці: 10000 шт |
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| PMZ950UPEYL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET Mounting: SMD Case: DFN1006-3; SOT883 On-state resistance: 2.1Ω Kind of package: reel; tape Technology: Trench Drain-source voltage: -20V Drain current: -300mA Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2A кількість в упаковці: 10000 шт |
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| PMZB1200UPEYL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A Drain-source voltage: -30V Drain current: -260mA On-state resistance: 2.4Ω Gate charge: 1.2nC Case: DFN1006B-3; SOT883B Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Technology: Trench Pulsed drain current: -1.7A Gate-source voltage: ±8V Type of transistor: P-MOSFET |
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| PMZB150UNEYL | NEXPERIA |
PMZB150UNEYL SMD N channel transistors |
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| PMZB200UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 5A Case: DFN1006B-3; SOT883B Gate-source voltage: ±8V On-state resistance: 410mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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| PMZB290UNE2YL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW Technology: Trench Mounting: SMD Power dissipation: 0.35W Case: DFN1006B-3; SOT883B Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Drain-source voltage: 20V Drain current: 0.8A On-state resistance: 1.19Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 7290 шт: термін постачання 7-14 дні (днів) |
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| PMZB320UPEYL | NEXPERIA |
PMZB320UPEYL SMD P channel transistors |
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| PMZB350UPE,315 | NEXPERIA |
PMZB350UPE.315 SMD P channel transistors |
товар відсутній |
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| PMZB390UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 4A Case: DFN1006B-3; SOT883B Gate-source voltage: ±8V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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| PMZB550UNEYL | NEXPERIA |
PMZB550UNEYL SMD N channel transistors |
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| PMZB600UNELYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006B-3; SOT883B On-state resistance: 1Ω Mounting: SMD кількість в упаковці: 10000 шт |
товар відсутній |
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| PMZB670UPE,315 | NEXPERIA |
PMZB670UPE.315 SMD P channel transistors |
товар відсутній |
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| PMZB950UPEYL | NEXPERIA |
PMZB950UPEYL SMD P channel transistors |
товар відсутній |
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| PNE20010ERX | NEXPERIA |
PNE20010ERX SMD universal diodes |
товар відсутній |
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 |
PNS40010ER,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V Max. off-state voltage: 0.4kV Load current: 1.4A Max. forward impulse current: 32A Case: SOD123W Kind of package: reel; tape Max. forward voltage: 0.93V Features of semiconductor devices: ultrafast switching Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 1.8µs Leakage current: 0.5mA Power dissipation: 2.3W Type of diode: rectifying кількість в упаковці: 5 шт |
на замовлення 3830 шт: термін постачання 7-14 дні (днів) |
|
| PMV45EN2R |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7892 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 16.42 грн |
| 28+ | 9.35 грн |
| 100+ | 8.19 грн |
| 145+ | 6.48 грн |
| 398+ | 6.12 грн |
| PMV45EN2VL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMV48XP,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 3120 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.01 грн |
| 25+ | 19.12 грн |
| 75+ | 13.36 грн |
| 195+ | 12.63 грн |
| PMV48XPA2R |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMV48XPAR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| PMV48XPVL |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMV50ENEAR |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A
Pulsed drain current: 5.5A
Gate charge: 10nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 69mΩ
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A
Pulsed drain current: 5.5A
Gate charge: 10nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 69mΩ
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
| PMV50UPE,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMV50XPR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2094 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 25.68 грн |
| 25+ | 15.33 грн |
| 94+ | 9.97 грн |
| 258+ | 9.43 грн |
| PMV65ENEAR |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
кількість в упаковці: 1 шт
товар відсутній
| PMV65UNER |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 13735 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.85 грн |
| 25+ | 10.11 грн |
| 100+ | 8.76 грн |
| 135+ | 7.16 грн |
| 360+ | 6.77 грн |
| PMV65XP,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 833mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 833mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 32189 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 14.5 грн |
| 32+ | 8 грн |
| 100+ | 6.89 грн |
| 168+ | 5.56 грн |
| 461+ | 5.26 грн |
| PMV65XPEAR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2067 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 23.93 грн |
| 25+ | 16.34 грн |
| 85+ | 11.16 грн |
| 232+ | 10.55 грн |
| PMV65XPER |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| PMV65XPVL |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMV75UP,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMV90ENER |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
кількість в упаковці: 1 шт
на замовлення 1159 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 15.46 грн |
| 30+ | 8.51 грн |
| 100+ | 7.38 грн |
| 158+ | 5.87 грн |
| 434+ | 5.55 грн |
| PMXB360ENEAZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Mounting: SMD
Case: DFN1010D-3; SOT1215
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Mounting: SMD
Case: DFN1010D-3; SOT1215
кількість в упаковці: 5000 шт
товар відсутній
| PMXB40UNEZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMXB65ENEZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMZ1200UPEYL |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
товар відсутній
| PMZ130UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.6nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.6nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
товар відсутній
| PMZ200UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
товар відсутній
| PMZ290UNE2YL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 800mA
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 800mA
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
товар відсутній
| PMZ350UPEYL |
|
Виробник: NEXPERIA
PMZ350UPEYL SMD P channel transistors
PMZ350UPEYL SMD P channel transistors
на замовлення 9840 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 12.49 грн |
| 247+ | 3.83 грн |
| 680+ | 3.62 грн |
| PMZ390UN,315 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.3nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 30V
Drain current: 0.6A
On-state resistance: 0.79Ω
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.3nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 30V
Drain current: 0.6A
On-state resistance: 0.79Ω
кількість в упаковці: 10000 шт
товар відсутній
| PMZ550UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
товар відсутній
| PMZ600UNELYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
| PMZ600UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
| PMZ600UNEZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
| PMZ950UPELYL |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN1006-3; SOT883
On-state resistance: 2.1Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -300mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN1006-3; SOT883
On-state resistance: 2.1Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -300mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
кількість в упаковці: 10000 шт
товар відсутній
| PMZ950UPEYL |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN1006-3; SOT883
On-state resistance: 2.1Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -300mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN1006-3; SOT883
On-state resistance: 2.1Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -300mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
кількість в упаковці: 10000 шт
товар відсутній
| PMZB1200UPEYL |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
товар відсутній
| PMZB200UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMZB290UNE2YL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 7290 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.5 грн |
| 55+ | 4.94 грн |
| 250+ | 3.77 грн |
| 690+ | 3.56 грн |
| 5000+ | 3.52 грн |
| PMZB390UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMZB600UNELYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
| PNS40010ER,115 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
кількість в упаковці: 5 шт
на замовлення 3830 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.98 грн |
| 35+ | 7.24 грн |
| 100+ | 6.25 грн |
| 200+ | 4.81 грн |
| 545+ | 4.54 грн |