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PSMN030-60YS,115 PSMN030-60YS,115 NEXPERIA PSMN030-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Mounting: SMD
Pulsed drain current: 116A
Power dissipation: 56W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 49.6mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN034-100BS,118 NEXPERIA PSMN034-100BS.pdf PSMN034-100BS.118 SMD N channel transistors
товар відсутній
PSMN034-100PS,127 NEXPERIA PSMN034-100PS.pdf PSMN034-100PS.127 THT N channel transistors
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
3+102.88 грн
15+ 66.96 грн
40+ 63.33 грн
Мінімальне замовлення: 3
PSMN038-100YLX PSMN038-100YLX NEXPERIA PSMN038-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1422 шт:
термін постачання 7-14 дні (днів)
4+71.04 грн
6+ 47.98 грн
25+ 41.59 грн
30+ 32.31 грн
81+ 30.55 грн
Мінімальне замовлення: 4
PSMN039-100YS,115 NEXPERIA PSMN039-100YS.pdf PSMN039-100YS.115 SMD N channel transistors
товар відсутній
PSMN040-100MSEX NEXPERIA PSMN040-100MSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 121A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 29.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN041-80YLX NEXPERIA PSMN041-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 100A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 21.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN045-80YS,115 NEXPERIA PSMN045-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 24A; Idm: 86A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 24A
Pulsed drain current: 86A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN057-200B,118 NEXPERIA PSMN057-200B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.5A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 250W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN057-200P,127 PSMN057-200P,127 NEXPERIA PSMN057-200P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 729 шт:
термін постачання 7-14 дні (днів)
2+235.03 грн
3+ 203.55 грн
7+ 151.62 грн
18+ 143.38 грн
Мінімальне замовлення: 2
PSMN059-150Y,115 NEXPERIA PSMN059-150Y.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; Idm: 129A; 113W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Pulsed drain current: 129A
Power dissipation: 113W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 27.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN069-100YS,115 NEXPERIA PSMN069-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN075-100MSEX NEXPERIA PSMN075-100MSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 74A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 74A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 57mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN0R7-25YLDX PSMN0R7-25YLDX NEXPERIA PSMN0R7-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 235A
Power dissipation: 158W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.47mΩ
Mounting: SMD
Gate charge: 110.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 NEXPERIA PSMN0R9-25YLC.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1434 шт:
термін постачання 7-14 дні (днів)
2+140.13 грн
5+ 121.44 грн
11+ 88.43 грн
30+ 83.6 грн
Мінімальне замовлення: 2
PSMN0R9-25YLDX NEXPERIA PSMN0R9-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 285A; Idm: 1614A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 285A
Pulsed drain current: 1614A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.04mΩ
Mounting: SMD
Gate charge: 89.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN0R9-30ULDX NEXPERIA PSMN0R9-30ULD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 284A; Idm: 1592A
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1592A
Case: SOT1023A
Drain-source voltage: 30V
Drain current: 284A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 109nC
Technology: NextPowerS3
кількість в упаковці: 1 шт
товар відсутній
PSMN0R9-30YLDX PSMN0R9-30YLDX NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1448 шт:
термін постачання 7-14 дні (днів)
2+233.26 грн
5+ 203.55 грн
7+ 148.24 грн
18+ 140.01 грн
Мінімальне замовлення: 2
PSMN102-200Y,115 NEXPERIA PSMN102-200Y.pdf PSMN102-200Y.115 SMD N channel transistors
товар відсутній
PSMN1R0-25YLDX NEXPERIA PSMN1R0-25YLD.pdf PSMN1R0-25YLDX SMD N channel transistors
товар відсутній
PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 NEXPERIA PSMN1R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Polarisation: unipolar
Drain current: 100A
On-state resistance: 1.15mΩ
Type of transistor: N-MOSFET
Power dissipation: 272W
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 1235 шт:
термін постачання 7-14 дні (днів)
2+149 грн
5+ 129.14 грн
10+ 98.83 грн
27+ 93.89 грн
500+ 91.42 грн
Мінімальне замовлення: 2
PSMN1R0-30YLDX PSMN1R0-30YLDX NEXPERIA PSMN1R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 255A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.15mΩ
Mounting: SMD
Gate charge: 121.35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 949 шт:
термін постачання 7-14 дні (днів)
2+142.79 грн
5+ 124.01 грн
11+ 90.59 грн
29+ 85.65 грн
Мінімальне замовлення: 2
PSMN1R0-40SSHJ NEXPERIA PSMN1R0-40SSH.pdf PSMN1R0-40SSHJ SMD N channel transistors
товар відсутній
PSMN1R0-40ULDX NEXPERIA PSMN1R0-40ULD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN1R0-40YLDX NEXPERIA PSMN1R0-40YLD.pdf PSMN1R0-40YLDX SMD N channel transistors
товар відсутній
PSMN1R0-40YSHX NEXPERIA PSMN1R0-40YSH.pdf PSMN1R0-40YSHX SMD N channel transistors
товар відсутній
PSMN1R1-25YLC,115 NEXPERIA PSMN1R1-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
1+353.88 грн
3+ 307.03 грн
5+ 224.83 грн
12+ 212.48 грн
PSMN1R1-40BS,118 NEXPERIA PSMN1R1-40BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-25YL,115 NEXPERIA PSMN1R2-25YL.pdf PSMN1R2-25YL.115 SMD N channel transistors
товар відсутній
PSMN1R2-25YLC,115 NEXPERIA PSMN1R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN1R2-25YLDX NEXPERIA PSMN1R2-25YLD.pdf PSMN1R2-25YLDX SMD N channel transistors
товар відсутній
PSMN1R2-30YLC,115 NEXPERIA PSMN1R2-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1237A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-30YLDX NEXPERIA PSMN1R2-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-55SLHAX NEXPERIA PSMN1R2-55SLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 284A
Pulsed drain current: 1588A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 395nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R3-30YL,115 PSMN1R3-30YL,115 NEXPERIA PSMN1R3-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1500 шт
товар відсутній
PSMN1R4-30YLDX NEXPERIA PSMN1R4-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1019A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R4-40YLDX NEXPERIA PSMN1R4-40YLD.pdf PSMN1R4-40YLDX SMD N channel transistors
товар відсутній
PSMN1R5-30BLEJ NEXPERIA PSMN1R5-30BLE.pdf PSMN1R5-30BLEJ SMD N channel transistors
товар відсутній
PSMN1R5-30YL,115 NEXPERIA PSMN1R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-30YLC,115 NEXPERIA PSMN1R5-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 1016A; 179W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 1.65mΩ
Kind of package: reel; tape
Power dissipation: 179W
Drain current: 200A
Gate charge: 65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 1016A
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-40PS,127 NEXPERIA PSMN1R5-40PS.pdf PSMN1R5-40PS.127 THT N channel transistors
товар відсутній
PSMN1R5-40YSDX NEXPERIA PSMN1R5-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Kind of channel: enhanced
Pulsed drain current: 1145A
Drain-source voltage: 40V
Drain current: 202A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Gate charge: 99nC
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30BL,118 NEXPERIA PSMN1R6-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1268A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.21mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30MLHX NEXPERIA PSMN1R6-30MLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-25YLDX NEXPERIA PSMN1R7-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-40YLDX NEXPERIA PSMN1R7-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 167A
Pulsed drain current: 944A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-60BS,118 PSMN1R7-60BS,118 NEXPERIA PSMN1R7-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 795 шт:
термін постачання 7-14 дні (днів)
1+307.76 грн
5+ 201.84 грн
14+ 183.65 грн
PSMN1R8-30MLHX NEXPERIA PSMN1R8-30MLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 624A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-30PL,127 PSMN1R8-30PL,127 NEXPERIA PSMN1R8-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-40YLC,115 PSMN1R8-40YLC,115 NEXPERIA PSMN1R8-40YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 15.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-80SSFJ NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 205A
Pulsed drain current: 1158A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40PLQ NEXPERIA PSMN1R9-40PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1332A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.15mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40YSDX NEXPERIA PSMN1R9-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-80SSEJ NEXPERIA PSMN1R9-80SSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 202A
Pulsed drain current: 1142A
Power dissipation: 340W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 232nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-100SSFJ NEXPERIA PSMN2R0-100SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25MLDX NEXPERIA PSMN2R0-25MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25YLDX NEXPERIA PSMN2R0-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30PL,127 PSMN2R0-30PL,127 NEXPERIA PSMN2R0-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YL,115 NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Mounting: SMD
Pulsed drain current: 116A
Power dissipation: 56W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 49.6mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN034-100BS,118 PSMN034-100BS.pdf
Виробник: NEXPERIA
PSMN034-100BS.118 SMD N channel transistors
товар відсутній
PSMN034-100PS,127 PSMN034-100PS.pdf
Виробник: NEXPERIA
PSMN034-100PS.127 THT N channel transistors
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
3+102.88 грн
15+ 66.96 грн
40+ 63.33 грн
Мінімальне замовлення: 3
PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1422 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
4+71.04 грн
6+ 47.98 грн
25+ 41.59 грн
30+ 32.31 грн
81+ 30.55 грн
Мінімальне замовлення: 4
PSMN039-100YS,115 PSMN039-100YS.pdf
Виробник: NEXPERIA
PSMN039-100YS.115 SMD N channel transistors
товар відсутній
PSMN040-100MSEX PSMN040-100MSE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 121A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 29.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN041-80YLX PSMN041-80YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 100A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 21.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN045-80YS,115 PSMN045-80YS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 24A; Idm: 86A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 24A
Pulsed drain current: 86A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN057-200B,118 PSMN057-200B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.5A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 250W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN057-200P,127 PSMN057-200P.pdf
PSMN057-200P,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 729 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+235.03 грн
3+ 203.55 грн
7+ 151.62 грн
18+ 143.38 грн
Мінімальне замовлення: 2
PSMN059-150Y,115 PSMN059-150Y.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; Idm: 129A; 113W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Pulsed drain current: 129A
Power dissipation: 113W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 27.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN069-100YS,115 PSMN069-100YS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN075-100MSEX PSMN075-100MSE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 74A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 74A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 57mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN0R7-25YLDX PSMN0R7-25YLD.pdf
PSMN0R7-25YLDX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 235A
Power dissipation: 158W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.47mΩ
Mounting: SMD
Gate charge: 110.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN0R9-25YLC,115 PSMN0R9-25YLC.115.pdf
PSMN0R9-25YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1434 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+140.13 грн
5+ 121.44 грн
11+ 88.43 грн
30+ 83.6 грн
Мінімальне замовлення: 2
PSMN0R9-25YLDX PSMN0R9-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 285A; Idm: 1614A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 285A
Pulsed drain current: 1614A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.04mΩ
Mounting: SMD
Gate charge: 89.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN0R9-30ULDX PSMN0R9-30ULD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 284A; Idm: 1592A
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1592A
Case: SOT1023A
Drain-source voltage: 30V
Drain current: 284A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 109nC
Technology: NextPowerS3
кількість в упаковці: 1 шт
товар відсутній
PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1448 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+233.26 грн
5+ 203.55 грн
7+ 148.24 грн
18+ 140.01 грн
Мінімальне замовлення: 2
PSMN102-200Y,115 PSMN102-200Y.pdf
Виробник: NEXPERIA
PSMN102-200Y.115 SMD N channel transistors
товар відсутній
PSMN1R0-25YLDX PSMN1R0-25YLD.pdf
Виробник: NEXPERIA
PSMN1R0-25YLDX SMD N channel transistors
товар відсутній
PSMN1R0-30YLC,115 PSMN1R0-30YLD.pdf
PSMN1R0-30YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Polarisation: unipolar
Drain current: 100A
On-state resistance: 1.15mΩ
Type of transistor: N-MOSFET
Power dissipation: 272W
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 1235 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+149 грн
5+ 129.14 грн
10+ 98.83 грн
27+ 93.89 грн
500+ 91.42 грн
Мінімальне замовлення: 2
PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 255A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.15mΩ
Mounting: SMD
Gate charge: 121.35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 949 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+142.79 грн
5+ 124.01 грн
11+ 90.59 грн
29+ 85.65 грн
Мінімальне замовлення: 2
PSMN1R0-40SSHJ PSMN1R0-40SSH.pdf
Виробник: NEXPERIA
PSMN1R0-40SSHJ SMD N channel transistors
товар відсутній
PSMN1R0-40ULDX PSMN1R0-40ULD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
Виробник: NEXPERIA
PSMN1R0-40YLDX SMD N channel transistors
товар відсутній
PSMN1R0-40YSHX PSMN1R0-40YSH.pdf
Виробник: NEXPERIA
PSMN1R0-40YSHX SMD N channel transistors
товар відсутній
PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+353.88 грн
3+ 307.03 грн
5+ 224.83 грн
12+ 212.48 грн
PSMN1R1-40BS,118 PSMN1R1-40BS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 1320A
Power dissipation: 306W
Gate charge: 136nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-25YL,115 PSMN1R2-25YL.pdf
Виробник: NEXPERIA
PSMN1R2-25YL.115 SMD N channel transistors
товар відсутній
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN1R2-25YLDX PSMN1R2-25YLD.pdf
Виробник: NEXPERIA
PSMN1R2-25YLDX SMD N channel transistors
товар відсутній
PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1237A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-30YLDX PSMN1R2-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN1R2-55SLHAX PSMN1R2-55SLH.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 284A
Pulsed drain current: 1588A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 395nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R3-30YL,115 PSMN1R3-30YL.pdf
PSMN1R3-30YL,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1500 шт
товар відсутній
PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1019A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
Виробник: NEXPERIA
PSMN1R4-40YLDX SMD N channel transistors
товар відсутній
PSMN1R5-30BLEJ PSMN1R5-30BLE.pdf
Виробник: NEXPERIA
PSMN1R5-30BLEJ SMD N channel transistors
товар відсутній
PSMN1R5-30YL,115 PSMN1R5-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-30YLC,115 PSMN1R5-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 1016A; 179W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 1.65mΩ
Kind of package: reel; tape
Power dissipation: 179W
Drain current: 200A
Gate charge: 65nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 1016A
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
PSMN1R5-40PS,127 PSMN1R5-40PS.pdf
Виробник: NEXPERIA
PSMN1R5-40PS.127 THT N channel transistors
товар відсутній
PSMN1R5-40YSDX PSMN1R5-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Kind of channel: enhanced
Pulsed drain current: 1145A
Drain-source voltage: 40V
Drain current: 202A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Gate charge: 99nC
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30BL,118 PSMN1R6-30BL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1268A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1268A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.21mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R6-30MLHX PSMN1R6-30MLH.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-25YLDX PSMN1R7-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-40YLDX PSMN1R7-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 167A
Pulsed drain current: 944A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 795 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+307.76 грн
5+ 201.84 грн
14+ 183.65 грн
PSMN1R8-30MLHX PSMN1R8-30MLH.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 624A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-30PL,127 PSMN1R8-30PL.pdf
PSMN1R8-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-40YLC,115 PSMN1R8-40YLC.pdf
PSMN1R8-40YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 15.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R8-80SSFJ PSMN1R8-80SSF.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 205A
Pulsed drain current: 1158A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40PLQ PSMN1R9-40PL.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 150A; Idm: 1332A; 349W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1332A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.15mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-40YSDX PSMN1R9-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN1R9-80SSEJ PSMN1R9-80SSE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 202A
Pulsed drain current: 1142A
Power dissipation: 340W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 232nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-100SSFJ PSMN2R0-100SSF.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25MLDX PSMN2R0-25MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-25YLDX PSMN2R0-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN2R0-30YL,115 PSMN2R0-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
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