Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PSMN4R5-40PS,127 | NEXPERIA | PSMN4R5-40PS.127 THT N channel transistors |
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PSMN4R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 70.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 797 шт: термін постачання 7-14 дні (днів) |
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PSMN4R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.05mΩ Mounting: THT Gate charge: 70.8nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN4R8-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 405W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 278nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN4R8-100PSEQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 693A Pulsed drain current: 693A Power dissipation: 405W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN4R8-100YSEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 115A Pulsed drain current: 653A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN5R0-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 622A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN5R0-40MLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Pulsed drain current: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN5R0-40MSHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Technology: NextPowerS3 Drain-source voltage: 40V Drain current: 62A On-state resistance: 10.9mΩ Gate charge: 29nC Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 349A Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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PSMN5R0-80BS,118 | NEXPERIA | PSMN5R0-80BS.118 SMD N channel transistors |
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PSMN5R0-80PS,127 | NEXPERIA | PSMN5R0-80PS.127 THT N channel transistors |
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PSMN5R2-60YLX | NEXPERIA | PSMN5R2-60YLX SMD N channel transistors |
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PSMN5R3-25MLDX | NEXPERIA | PSMN5R3-25MLDX SMD N channel transistors |
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PSMN5R4-25YLDX | NEXPERIA | PSMN5R4-25YLDX SMD N channel transistors |
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PSMN5R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 74A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2835 шт: термін постачання 7-14 дні (днів) |
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PSMN5R6-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 539A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.22mΩ Mounting: SMD Gate charge: 141nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN5R6-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 539A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN5R6-60YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W Polarisation: unipolar Mounting: SMD Pulsed drain current: 405A Power dissipation: 167W Gate charge: 66.8nC Features of semiconductor devices: logic level Drain current: 72A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 16.3mΩ кількість в упаковці: 1 шт |
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PSMN5R8-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Pulsed drain current: 360A Power dissipation: 89W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 28.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN6R0-25YLB,115 | NEXPERIA | PSMN6R0-25YLB.115 SMD N channel transistors |
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PSMN6R0-25YLDX | NEXPERIA | PSMN6R0-25YLDX SMD N channel transistors |
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PSMN6R0-30YL,115 | NEXPERIA | PSMN6R0-30YL.115 SMD N channel transistors |
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PSMN6R0-30YLDX | NEXPERIA | PSMN6R0-30YLDX SMD N channel transistors |
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PSMN6R1-25MLDX | NEXPERIA | PSMN6R1-25MLDX SMD N channel transistors |
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PSMN6R1-30YLDX | NEXPERIA | PSMN6R1-30YLDX SMD N channel transistors |
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PSMN6R3-120PS | NEXPERIA | PSMN6R3-120PS THT N channel transistors |
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PSMN6R4-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 47A Pulsed drain current: 264A Power dissipation: 51W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN6R5-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN6R5-80BS,118 | NEXPERIA | PSMN6R5-80BS.118 SMD N channel transistors |
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PSMN6R5-80PS,127 | NEXPERIA | PSMN6R5-80PS.127 THT N channel transistors |
на замовлення 70 шт: термін постачання 7-14 дні (днів) |
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PSMN6R7-40MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 282A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 40V Drain current: 50A On-state resistance: 16.7mΩ кількість в упаковці: 1 шт |
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PSMN6R7-40MSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 282A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 40V Drain current: 50A On-state resistance: 13mΩ кількість в упаковці: 1 шт |
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PSMN6R9-100YSFX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 88A Pulsed drain current: 360A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 50.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R0-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R0-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R0-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 270A Power dissipation: 57W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 76A Pulsed drain current: 260A Power dissipation: 51W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.97mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1490 шт: термін постачання 7-14 дні (днів) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 14.7mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1465 шт: термін постачання 7-14 дні (днів) |
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PSMN7R5-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 230A Power dissipation: 45W Case: LFPAK33; SOT1210 On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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PSMN7R5-60YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Pulsed drain current: 346A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 19.7mΩ Mounting: SMD Gate charge: 60.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 1488 шт: термін постачання 7-14 дні (днів) |
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PSMN7R6-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 481A Power dissipation: 296W Case: D2PAK; SOT404 On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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PSMN7R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 389A Power dissipation: 149W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 38.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 92A Pulsed drain current: 389A Power dissipation: 149W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R8-100PSEQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 473A Power dissipation: 294W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R0-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R0-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 92 шт: термін постачання 7-14 дні (днів) |
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PSMN8R0-80YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Pulsed drain current: 423A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R2-80YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 326A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1490 шт: термін постачання 7-14 дні (днів) |
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PSMN8R3-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 274A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R5-100PSQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 429A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R5-40MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R5-40MSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 76A Pulsed drain current: 303A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1490 шт: термін постачання 7-14 дні (днів) |
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PSMN8R7-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN8R7-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 77 шт: термін постачання 7-14 дні (днів) |
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PSMN8R9-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN9R0-25MLC,115 | NEXPERIA | PSMN9R0-25MLC.115 SMD N channel transistors |
товар відсутній |
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PSMN9R1-30YL,115 | NEXPERIA | PSMN9R1-30YL.115 SMD N channel transistors |
товар відсутній |
PSMN4R6-60BS,118 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 797 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 142.43 грн |
5+ | 123.7 грн |
11+ | 91.19 грн |
29+ | 86.26 грн |
PSMN4R6-60PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN4R8-100BSEJ |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN4R8-100PSEQ |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN4R8-100YSEX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN5R0-100PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN5R0-40MLHX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN5R0-40MSHX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
PSMN5R5-60YS,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2835 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 128.28 грн |
5+ | 114.31 грн |
11+ | 90.36 грн |
29+ | 85.43 грн |
500+ | 82.15 грн |
PSMN5R6-100BS,118 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN5R6-100PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN5R6-60YLX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN5R8-40YS,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN6R4-30MLDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN6R5-25YLC,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN6R5-80PS,127 |
Виробник: NEXPERIA
PSMN6R5-80PS.127 THT N channel transistors
PSMN6R5-80PS.127 THT N channel transistors
на замовлення 70 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 176.05 грн |
9+ | 113.94 грн |
24+ | 107.7 грн |
PSMN6R7-40MLDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN6R7-40MSDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13mΩ
кількість в упаковці: 1 шт
товар відсутній
PSMN6R9-100YSFX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R0-100BS,118 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R0-100PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R0-30MLC,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R0-30YL,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R0-30YLC,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1490 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.07 грн |
6+ | 47.35 грн |
25+ | 41.07 грн |
31+ | 30.72 грн |
86+ | 29 грн |
PSMN7R0-60YS,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1465 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.62 грн |
5+ | 105.78 грн |
14+ | 71.47 грн |
37+ | 67.36 грн |
PSMN7R5-30MLDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN7R5-30YLDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
PSMN7R5-60YLX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1488 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.59 грн |
5+ | 76.78 грн |
19+ | 51.75 грн |
51+ | 48.47 грн |
PSMN7R6-100BSEJ |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
PSMN7R6-60BS,118 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R6-60PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN7R8-100PSEQ |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R0-40BS,118 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R0-40PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 92 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 92.13 грн |
10+ | 78.86 грн |
15+ | 67.36 грн |
39+ | 64.08 грн |
PSMN8R0-80YLX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R2-80YS,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1490 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.43 грн |
5+ | 104.08 грн |
13+ | 74.59 грн |
35+ | 70.57 грн |
500+ | 70.48 грн |
PSMN8R3-40YS,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 274A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 274A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R5-100PSQ |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 429A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 429A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R5-40MLDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R5-40MSDX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R5-60YS,115 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1490 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 94.66 грн |
5+ | 81.9 грн |
16+ | 59.89 грн |
44+ | 56.6 грн |
PSMN8R7-80BS,118 |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
PSMN8R7-80PS,127 |
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 153.05 грн |
3+ | 133.08 грн |
10+ | 95.95 грн |
28+ | 90.77 грн |
PSMN8R9-100BSEJ |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 419A
Power dissipation: 296W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 419A
Power dissipation: 296W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній