Фото | Назва | Виробник | Інформація |
Доступність |
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FQD1N60CTF | onsemi |
Description: MOSFET N-CH 600V 1A DPAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
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FQD7N20LTM | onsemi |
Description: MOSFET N-CH 200V 5.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
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KSC5020O | onsemi |
Description: TRANS NPN 500V 3A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V Frequency - Transition: 18MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 40 W |
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FQPF11P06 | onsemi | Description: MOSFET P-CH 60V 8.6A TO220F |
на замовлення 417 шт: термін постачання 21-31 дні (днів) |
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FQD10N20CTF | onsemi |
Description: MOSFET N-CH 200V 7.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
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LP2951CMX | onsemi |
Description: IC REG LIN POS ADJ 100MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 140 µA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Max): 29.4V Voltage - Output (Min/Fixed): 1.26V (5V) Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 7 mA |
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FQU10N20CTU | onsemi |
Description: MOSFET N-CH 200V 7.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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FQPF2N40 | onsemi | Description: MOSFET N-CH 400V 1.1A TO220F |
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USB10H | onsemi |
Description: MOSFET 2P-CH 20V 1.9A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
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LMV358AMU8X | onsemi | Description: IC OPAMP VFB 2 CIRCUIT 8MSOP |
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RFD3055SM | onsemi |
Description: MOSFET N-CH 60V 12A TO252AA Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
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KSB834WYTM | onsemi |
Description: TRANS PNP 60V 3A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
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FQU11P06TU | onsemi |
Description: MOSFET P-CH 60V 9.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
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FQU4P25TU | onsemi |
Description: MOSFET P-CH 250V 3.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
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KSC5042FYDTU | onsemi |
Description: TRANS NPN 900V 0.1A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 4mA, 20mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: TO-220F-3 (Y-Forming) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 900 V Power - Max: 6 W |
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HUF75307D3 | onsemi | Description: MOSFET N-CH 55V 15A IPAK |
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KA78R05CTSTU | onsemi |
Description: IC REG LINEAR 5V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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KSD363Y | onsemi |
Description: TRANS NPN 120V 6A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 40 W |
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KA78R09CTSTU | onsemi |
Description: IC REG LINEAR 9V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L Voltage - Output (Min/Fixed): 9V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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MM74HC154MTCX | onsemi |
Description: IC DECODER 1 X 4:16 24TSSOP Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 4:16 Type: Decoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 24-TSSOP Part Status: Obsolete |
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KA317TU | onsemi |
Description: IC REG LIN POS ADJ 1.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 1.5A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): 37V Voltage - Output (Min/Fixed): 1.2V Part Status: Obsolete PSRR: 75dB ~ 60dB (120Hz) Protection Features: Over Temperature, Short Circuit |
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KA78R33CYDTU | onsemi |
Description: IC REG LINEAR 3.3V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L (Forming) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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KSD363O | onsemi |
Description: TRANS NPN 120V 6A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 40 W |
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FQP7N20 | onsemi |
Description: MOSFET N-CH 200V 6.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 3.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 852 шт: термін постачання 21-31 дні (днів) |
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KA78R08CTSTU | onsemi |
Description: IC REG LINEAR 8V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L Voltage - Output (Min/Fixed): 8V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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KA78R05CTU | onsemi |
Description: IC REG LINEAR 5V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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KA78R09CYDTU | onsemi |
Description: IC REG LINEAR 9V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L (Forming) Voltage - Output (Min/Fixed): 9V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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FQP11P06 | onsemi | Description: MOSFET P-CH 60V 11.4A TO220-3 |
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FQD4P25TM | onsemi |
Description: MOSFET P-CH 250V 3.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
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KA78R09CTU | onsemi |
Description: IC REG LINEAR 9V 1A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L Voltage - Output (Min/Fixed): 9V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
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MM74HC154MTC | onsemi |
Description: IC DECODER 1 X 4:16 24TSSOP Packaging: Tube Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 4:16 Type: Decoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 24-TSSOP Part Status: Obsolete |
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TIP102TSTU | onsemi |
Description: TRANS NPN DARL 100V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
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FQP4P25 | onsemi | Description: MOSFET P-CH 250V 4A TO220-3 |
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FQD10N20CTM | onsemi |
Description: MOSFET N-CH 200V 7.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
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FQD13N10TM | onsemi |
Description: MOSFET N-CH 100V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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FQD13N10TF | onsemi |
Description: MOSFET N-CH 100V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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FQP8P10 | onsemi |
Description: MOSFET P-CH 100V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
на замовлення 2467 шт: термін постачання 21-31 дні (днів) |
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FQP13N10L | onsemi |
Description: MOSFET N-CH 100V 12.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
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H11AA4SM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SOP Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.17V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 3004 шт: термін постачання 21-31 дні (днів) |
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FQU13N06LTU | onsemi |
Description: MOSFET N-CH 60V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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FQP13N10 | onsemi |
Description: MOSFET N-CH 100V 12.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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H11AA4M | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.17V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 114646 шт: термін постачання 21-31 дні (днів) |
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SI4532DY | onsemi |
Description: MOSFET N/P-CH 30V 3.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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FQD13N10LTM | onsemi |
Description: MOSFET N-CH 100V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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H11AA4SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.17V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FQD13N10LTF | onsemi |
Description: MOSFET N-CH 100V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
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H11AA4TM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.17V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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HUF75307D3ST | onsemi | Description: MOSFET N-CH 55V 15A TO252AA |
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FQD6N25TF | onsemi |
Description: MOSFET N-CH 250V 4.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
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KA555 | onsemi |
Description: IC OSC SINGLE TIMER 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: 555 Type, Timer/Oscillator (Single) Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 16V Supplier Device Package: 8-DIP Current - Supply: 7.5 mA |
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FQP630TSTU | onsemi |
Description: MOSFET N-CH 200V 9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
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SGM2N60UFTF | onsemi |
Description: IGBT 600V 2.4A 2.1W SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A Supplier Device Package: SOT-223-4 Td (on/off) @ 25°C: 15ns/80ns Switching Energy: 30µJ (on), 13µJ (off) Test Condition: 300V, 1.2A, 200Ohm, 15V Gate Charge: 9 nC Current - Collector (Ic) (Max): 2.4 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 10 A Power - Max: 2.1 W |
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FQD5P20TM | onsemi |
Description: MOSFET P-CH 200V 3.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
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FQD5P20TF | onsemi |
Description: MOSFET P-CH 200V 3.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
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QSB34GR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD GW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Gull Wing Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 730nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Voltage - DC Reverse (Vr) (Max): 32 V |
на замовлення 29000 шт: термін постачання 21-31 дні (днів) |
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FQD1N80TF | onsemi |
Description: MOSFET N-CH 800V 1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
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QSB34ZR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Z-Bend Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 730nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Voltage - DC Reverse (Vr) (Max): 32 V |
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FQD1N80TM | onsemi |
Description: MOSFET N-CH 800V 1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
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FJP5304DTU | onsemi |
Description: TRANS NPN 400V 4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 250mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 70 W |
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MBRP1545NTU | onsemi |
Description: DIODE ARR SCHOTT 45V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товар відсутній |
FQD1N60CTF |
Виробник: onsemi
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товар відсутній
FQD7N20LTM |
Виробник: onsemi
Description: MOSFET N-CH 200V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 200V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
KSC5020O |
Виробник: onsemi
Description: TRANS NPN 500V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
Frequency - Transition: 18MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
Description: TRANS NPN 500V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
Frequency - Transition: 18MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
товар відсутній
FQPF11P06 |
Виробник: onsemi
Description: MOSFET P-CH 60V 8.6A TO220F
Description: MOSFET P-CH 60V 8.6A TO220F
на замовлення 417 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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3+ | 102.75 грн |
10+ | 88.5 грн |
100+ | 68.98 грн |
FQD10N20CTF |
Виробник: onsemi
Description: MOSFET N-CH 200V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 200V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
LP2951CMX |
Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 140 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 29.4V
Voltage - Output (Min/Fixed): 1.26V (5V)
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Description: IC REG LIN POS ADJ 100MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 140 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 29.4V
Voltage - Output (Min/Fixed): 1.26V (5V)
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
товар відсутній
FQU10N20CTU |
Виробник: onsemi
Description: MOSFET N-CH 200V 7.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 200V 7.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.36 грн |
70+ | 49.03 грн |
140+ | 35.59 грн |
560+ | 27.9 грн |
USB10H |
Виробник: onsemi
Description: MOSFET 2P-CH 20V 1.9A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2P-CH 20V 1.9A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
товар відсутній
RFD3055SM |
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252AA
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252AA
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
товар відсутній
KSB834WYTM |
Виробник: onsemi
Description: TRANS PNP 60V 3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS PNP 60V 3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQU11P06TU |
Виробник: onsemi
Description: MOSFET P-CH 60V 9.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET P-CH 60V 9.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
товар відсутній
FQU4P25TU |
Виробник: onsemi
Description: MOSFET P-CH 250V 3.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET P-CH 250V 3.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
KSC5042FYDTU |
Виробник: onsemi
Description: TRANS NPN 900V 0.1A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 4mA, 20mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: TO-220F-3 (Y-Forming)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 6 W
Description: TRANS NPN 900V 0.1A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 4mA, 20mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: TO-220F-3 (Y-Forming)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 6 W
товар відсутній
KA78R05CTSTU |
Виробник: onsemi
Description: IC REG LINEAR 5V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
KSD363Y |
Виробник: onsemi
Description: TRANS NPN 120V 6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Description: TRANS NPN 120V 6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
товар відсутній
KA78R09CTSTU |
Виробник: onsemi
Description: IC REG LINEAR 9V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 9V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
MM74HC154MTCX |
Виробник: onsemi
Description: IC DECODER 1 X 4:16 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
Description: IC DECODER 1 X 4:16 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
товар відсутній
KA317TU |
Виробник: onsemi
Description: IC REG LIN POS ADJ 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB ~ 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LIN POS ADJ 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB ~ 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
товар відсутній
KA78R33CYDTU |
Виробник: onsemi
Description: IC REG LINEAR 3.3V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 3.3V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
KSD363O |
Виробник: onsemi
Description: TRANS NPN 120V 6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Description: TRANS NPN 120V 6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
товар відсутній
FQP7N20 |
Виробник: onsemi
Description: MOSFET N-CH 200V 6.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 3.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 200V 6.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 3.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.05 грн |
10+ | 74.96 грн |
100+ | 58.45 грн |
500+ | 45.31 грн |
KA78R08CTSTU |
Виробник: onsemi
Description: IC REG LINEAR 8V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 8V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
KA78R05CTU |
Виробник: onsemi
Description: IC REG LINEAR 5V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
KA78R09CYDTU |
Виробник: onsemi
Description: IC REG LINEAR 9V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 9V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
FQD4P25TM |
Виробник: onsemi
Description: MOSFET P-CH 250V 3.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET P-CH 250V 3.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
KA78R09CTU |
Виробник: onsemi
Description: IC REG LINEAR 9V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 9V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
товар відсутній
MM74HC154MTC |
Виробник: onsemi
Description: IC DECODER 1 X 4:16 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
Description: IC DECODER 1 X 4:16 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
товар відсутній
TIP102TSTU |
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товар відсутній
FQD10N20CTM |
Виробник: onsemi
Description: MOSFET N-CH 200V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 200V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
FQD13N10TM |
Виробник: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
FQD13N10TF |
Виробник: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
FQP8P10 |
Виробник: onsemi
Description: MOSFET P-CH 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET P-CH 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.63 грн |
10+ | 69.33 грн |
100+ | 54.07 грн |
500+ | 41.92 грн |
1000+ | 33.1 грн |
2000+ | 30.89 грн |
FQP13N10L |
Виробник: onsemi
Description: MOSFET N-CH 100V 12.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 100V 12.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
товар відсутній
H11AA4SM |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SOP
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SOP
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 3004 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.65 грн |
50+ | 38.08 грн |
100+ | 24.94 грн |
1000+ | 18.48 грн |
2000+ | 17.25 грн |
FQU13N06LTU |
Виробник: onsemi
Description: MOSFET N-CH 60V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)FQP13N10 |
Виробник: onsemi
Description: MOSFET N-CH 100V 12.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 100V 12.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
H11AA4M |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 114646 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.08 грн |
50+ | 35.59 грн |
100+ | 23.32 грн |
1000+ | 17.28 грн |
2000+ | 16.13 грн |
5000+ | 15.55 грн |
10000+ | 15.07 грн |
25000+ | 14.73 грн |
SI4532DY |
Виробник: onsemi
Description: MOSFET N/P-CH 30V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 34.26 грн |
5000+ | 31.42 грн |
12500+ | 29.97 грн |
FQD13N10LTM |
Виробник: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 17.66 грн |
H11AA4SR2VM |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 19.07 грн |
FQD13N10LTF |
Виробник: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
товар відсутній
H11AA4TM |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
FQD6N25TF |
Виробник: onsemi
Description: MOSFET N-CH 250V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 250V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
товар відсутній
KA555 |
Виробник: onsemi
Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
товар відсутній
FQP630TSTU |
Виробник: onsemi
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
товар відсутній
SGM2N60UFTF |
Виробник: onsemi
Description: IGBT 600V 2.4A 2.1W SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
Supplier Device Package: SOT-223-4
Td (on/off) @ 25°C: 15ns/80ns
Switching Energy: 30µJ (on), 13µJ (off)
Test Condition: 300V, 1.2A, 200Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 2.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 10 A
Power - Max: 2.1 W
Description: IGBT 600V 2.4A 2.1W SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
Supplier Device Package: SOT-223-4
Td (on/off) @ 25°C: 15ns/80ns
Switching Energy: 30µJ (on), 13µJ (off)
Test Condition: 300V, 1.2A, 200Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 2.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 10 A
Power - Max: 2.1 W
товар відсутній
FQD5P20TM |
Виробник: onsemi
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
товар відсутній
FQD5P20TF |
Виробник: onsemi
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
товар відсутній
QSB34GR |
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 27.56 грн |
2000+ | 25.21 грн |
5000+ | 24.64 грн |
10000+ | 22.59 грн |
25000+ | 22.24 грн |
FQD1N80TF |
Виробник: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
товар відсутній
QSB34ZR |
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
товар відсутній
FQD1N80TM |
Виробник: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
товар відсутній
FJP5304DTU |
Виробник: onsemi
Description: TRANS NPN 400V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
Description: TRANS NPN 400V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
товар відсутній
MBRP1545NTU |
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товар відсутній