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FQI11P06TU FQI11P06TU onsemi FQB_I11P06_Rev_March2013.pdf Description: MOSFET P-CH 60V 11.4A I2PAK
товар відсутній
KA2803BD KA2803BD onsemi Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 12V ~ 20V
Applications: Earth Leakage Detector
Current - Supply: 400µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товар відсутній
KA2807DTF KA2807DTF onsemi ka2807-d.pdf Description: IC GROUND FAULT INTERRUPTER 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 70°C
Applications: Earth Leakage Detector
Current - Supply: 19mA
Supplier Device Package: 8-SOIC
товар відсутній
KA2803B KA2803B onsemi FAIRS46708-1.pdf?t.download=true&u=5oefqw Description: IC EARTH LEAKAGE DETECTOR 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 12V ~ 20V
Applications: Earth Leakage Detector
Current - Supply: 400µA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
товар відсутній
KA2807D KA2807D onsemi ka2807-d.pdf Description: IC GROUND FAULT INTERRUPTER 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 70°C
Applications: Earth Leakage Detector
Current - Supply: 19mA
Supplier Device Package: 8-SOIC
товар відсутній
KA2807 KA2807 onsemi ka2807-d.pdf Description: IC GROUND FAULT INTERRUPTER 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 70°C
Applications: Earth Leakage Detector
Current - Supply: 19mA
Supplier Device Package: 8-DIP
товар відсутній
KA2803BDTF KA2803BDTF onsemi Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 12V ~ 20V
Applications: Earth Leakage Detector
Current - Supply: 400µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
товар відсутній
KA34063A KA34063A onsemi ka34063-d.pdf Description: IC REG BUCK BST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 3V
Part Status: Last Time Buy
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
5+64.22 грн
10+ 55.65 грн
50+ 52.82 грн
100+ 38.06 грн
250+ 33.64 грн
Мінімальне замовлення: 5
KSB1022TU KSB1022TU onsemi KSB1022.PDF Description: TRANS PNP DARL 60V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
FQP9N25CTSTU FQP9N25CTSTU onsemi FQP9N25C, FQPF9N25C.pdf Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
QSB34 onsemi ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw Description: SENSOR PHOTODIODE 940NM AXIAL
Packaging: Bulk
Package / Case: Axial
Wavelength: 940nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
товар відсутній
FQD20N06LTF FQD20N06LTF onsemi Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
HUFA76407D3ST HUFA76407D3ST onsemi HUFA76407D3,D3S.pdf Description: MOSFET N-CH 60V 12A TO252AA
товар відсутній
HUFA75307D3ST HUFA75307D3ST onsemi HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf Description: MOSFET N-CH 55V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товар відсутній
FQPF17N08L FQPF17N08L onsemi FQPF17N08L.pdf Description: MOSFET N-CH 80V 11.2A TO220F
товар відсутній
KSA1010OTU KSA1010OTU onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
товар відсутній
KSA1010RTU KSA1010RTU onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
товар відсутній
KSA1010Y KSA1010Y onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
товар відсутній
FQB7N10LTM FQB7N10LTM onsemi FQB7N10L,%20FQI7N10L.pdf Description: MOSFET N-CH 100V 7.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
товар відсутній
FQB20N06LTM FQB20N06LTM onsemi FQB20N06L,%20FQI20N06L.pdf Description: MOSFET N-CH 60V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
FQD5N30TM FQD5N30TM onsemi FQD5N30.pdf Description: MOSFET N-CH 300V 4.4A DPAK
товар відсутній
FQD5N30TF FQD5N30TF onsemi FQD5N30.pdf Description: MOSFET N-CH 300V 4.4A DPAK
товар відсутній
FFPF10F150STU FFPF10F150STU onsemi ffpf10f150s-d.pdf Description: DIODE GEN PURP 1.5KV 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
KSC5338D KSC5338D onsemi ksc5338d-d.pdf Description: TRANS NPN 450V 5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
4+74.92 грн
10+ 59.16 грн
100+ 45.98 грн
500+ 36.58 грн
1000+ 29.79 грн
Мінімальне замовлення: 4
IRLS630A IRLS630A onsemi IRLS630A.pdf Description: MOSFET N-CH 200V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
товар відсутній
KSC5338DTU KSC5338DTU onsemi ksc5338d-d.pdf Description: TRANS NPN 450V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
3+99.18 грн
10+ 79.7 грн
100+ 63.44 грн
500+ 50.38 грн
Мінімальне замовлення: 3
QSB34CGR QSB34CGR onsemi ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
на замовлення 640932 шт:
термін постачання 21-31 дні (днів)
4+77.06 грн
10+ 47 грн
100+ 34.79 грн
500+ 30.01 грн
Мінімальне замовлення: 4
FJP5027RTU FJP5027RTU onsemi fjp5027-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
4+72.07 грн
10+ 57.03 грн
Мінімальне замовлення: 4
FDW2501N FDW2501N onsemi FDW2501N.pdf Description: MOSFET 2N-CH 20V 6A 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
товар відсутній
FJP5027OTU FJP5027OTU onsemi fjp5027-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
4+81.34 грн
10+ 64.11 грн
100+ 49.89 грн
500+ 39.68 грн
1000+ 32.33 грн
2000+ 30.43 грн
Мінімальне замовлення: 4
MM74HC589MX MM74HC589MX onsemi MM74HC589.pdf Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
MM74HC589SJ MM74HC589SJ onsemi MM74HC589.pdf Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
IRLR230ATM IRLR230ATM onsemi IRLR,U230A.pdf Description: MOSFET N-CH 200V 7.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
товар відсутній
NC7WB3306K8X NC7WB3306K8X onsemi NC7WB3306.pdf Description: IC BUS SWITCH 1 X 1:1 US8
товар відсутній
FJPF5027OTU FJPF5027OTU onsemi fjpf5027-d.pdf Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
4+82.05 грн
50+ 63.82 грн
100+ 50.57 грн
Мінімальне замовлення: 4
FJPF5027RTU FJPF5027RTU onsemi fjpf5027-d.pdf Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товар відсутній
FQD5N40TF FQD5N40TF onsemi Description: MOSFET N-CH 400V 3.4A DPAK
товар відсутній
FJP5027TU FJP5027TU onsemi fjp5027-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
товар відсутній
KA3845B KA3845B onsemi KA3842B-45B.pdf Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
товар відсутній
FJPF5027TU FJPF5027TU onsemi fjpf5027-d.pdf Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товар відсутній
FJPF5021OTU FJPF5021OTU onsemi fjpf5021-d.pdf Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
3+95.61 грн
50+ 73.81 грн
100+ 58.5 грн
Мінімальне замовлення: 3
MM74HC589SJX MM74HC589SJX onsemi MM74HC589.pdf Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
MM74HC589M MM74HC589M onsemi MM74HC589.pdf Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
FJPF5021RTU FJPF5021RTU onsemi fjpf5021-d.pdf Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
товар відсутній
FQPF2P40 FQPF2P40 onsemi FQPF2P40.pdf Description: MOSFET P-CH 400V 1.34A TO220F
товар відсутній
FQU30N06LTU FQU30N06LTU onsemi FQD30N06L.pdf Description: MOSFET N-CH 60V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
HUF76609D3ST HUF76609D3ST onsemi ONSM-S-A0003590912-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
товар відсутній
FQD19N10TF FQD19N10TF onsemi Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товар відсутній
FQD19N10TM FQD19N10TM onsemi fqd19n10-d.pdf Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товар відсутній
FQD17P06TM FQD17P06TM onsemi ONSM-S-A0003587829-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+27.64 грн
5000+ 25.35 грн
12500+ 24.18 грн
Мінімальне замовлення: 2500
KSC5039H2 KSC5039H2 onsemi KSC5039.pdf Description: TRANS NPN 400V 5A TO220F-3
товар відсутній
NZT45H8 NZT45H8 onsemi nzt45h8-d.pdf Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQD30N06LTM FQD30N06LTM onsemi FQD30N06L.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
FQB13N10LTM FQB13N10LTM onsemi FQB13N10L, FQI13N10L.pdf Description: MOSFET N-CH 100V 12.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
товар відсутній
FQD14N15TM FQD14N15TM onsemi FQD14N15%2C%20FQU14N15.pdf Description: MOSFET N-CH 150V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
товар відсутній
FQD6N40CTM FQD6N40CTM onsemi fqd6n40c-d.pdf Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
NZT44H8 NZT44H8 onsemi D44H8_NZT44H8.pdf Description: TRANS NPN 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQB1P50TM FQB1P50TM onsemi fqb1p50-d.pdf Description: MOSFET P-CH 500V 1.5A D2PAK
товар відсутній
FQB13N06LTM FQB13N06LTM onsemi FQB13N06L%2C%20FQI13N06L.pdf Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
FYP2004DNTU FYP2004DNTU onsemi FYP2004DN.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товар відсутній
FQI11P06TU FQB_I11P06_Rev_March2013.pdf
FQI11P06TU
Виробник: onsemi
Description: MOSFET P-CH 60V 11.4A I2PAK
товар відсутній
KA2803BD
KA2803BD
Виробник: onsemi
Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 12V ~ 20V
Applications: Earth Leakage Detector
Current - Supply: 400µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товар відсутній
KA2807DTF ka2807-d.pdf
KA2807DTF
Виробник: onsemi
Description: IC GROUND FAULT INTERRUPTER 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 70°C
Applications: Earth Leakage Detector
Current - Supply: 19mA
Supplier Device Package: 8-SOIC
товар відсутній
KA2803B FAIRS46708-1.pdf?t.download=true&u=5oefqw
KA2803B
Виробник: onsemi
Description: IC EARTH LEAKAGE DETECTOR 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 12V ~ 20V
Applications: Earth Leakage Detector
Current - Supply: 400µA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
товар відсутній
KA2807D ka2807-d.pdf
KA2807D
Виробник: onsemi
Description: IC GROUND FAULT INTERRUPTER 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 70°C
Applications: Earth Leakage Detector
Current - Supply: 19mA
Supplier Device Package: 8-SOIC
товар відсутній
KA2807 ka2807-d.pdf
KA2807
Виробник: onsemi
Description: IC GROUND FAULT INTERRUPTER 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 70°C
Applications: Earth Leakage Detector
Current - Supply: 19mA
Supplier Device Package: 8-DIP
товар відсутній
KA2803BDTF
KA2803BDTF
Виробник: onsemi
Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 12V ~ 20V
Applications: Earth Leakage Detector
Current - Supply: 400µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
товар відсутній
KA34063A ka34063-d.pdf
KA34063A
Виробник: onsemi
Description: IC REG BUCK BST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 3V
Part Status: Last Time Buy
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.22 грн
10+ 55.65 грн
50+ 52.82 грн
100+ 38.06 грн
250+ 33.64 грн
Мінімальне замовлення: 5
KSB1022TU KSB1022.PDF
KSB1022TU
Виробник: onsemi
Description: TRANS PNP DARL 60V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
FQP9N25CTSTU FQP9N25C, FQPF9N25C.pdf
FQP9N25CTSTU
Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
QSB34 ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM AXIAL
Packaging: Bulk
Package / Case: Axial
Wavelength: 940nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
товар відсутній
FQD20N06LTF
FQD20N06LTF
Виробник: onsemi
Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
HUFA76407D3ST HUFA76407D3,D3S.pdf
HUFA76407D3ST
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252AA
товар відсутній
HUFA75307D3ST HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf
HUFA75307D3ST
Виробник: onsemi
Description: MOSFET N-CH 55V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товар відсутній
FQPF17N08L FQPF17N08L.pdf
FQPF17N08L
Виробник: onsemi
Description: MOSFET N-CH 80V 11.2A TO220F
товар відсутній
KSA1010OTU ksa1010-d.pdf
KSA1010OTU
Виробник: onsemi
Description: TRANS PNP 100V 7A TO220-3
товар відсутній
KSA1010RTU ksa1010-d.pdf
KSA1010RTU
Виробник: onsemi
Description: TRANS PNP 100V 7A TO220-3
товар відсутній
KSA1010Y ksa1010-d.pdf
KSA1010Y
Виробник: onsemi
Description: TRANS PNP 100V 7A TO220-3
товар відсутній
FQB7N10LTM FQB7N10L,%20FQI7N10L.pdf
FQB7N10LTM
Виробник: onsemi
Description: MOSFET N-CH 100V 7.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
товар відсутній
FQB20N06LTM FQB20N06L,%20FQI20N06L.pdf
FQB20N06LTM
Виробник: onsemi
Description: MOSFET N-CH 60V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
FQD5N30TM FQD5N30.pdf
FQD5N30TM
Виробник: onsemi
Description: MOSFET N-CH 300V 4.4A DPAK
товар відсутній
FQD5N30TF FQD5N30.pdf
FQD5N30TF
Виробник: onsemi
Description: MOSFET N-CH 300V 4.4A DPAK
товар відсутній
FFPF10F150STU ffpf10f150s-d.pdf
FFPF10F150STU
Виробник: onsemi
Description: DIODE GEN PURP 1.5KV 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
KSC5338D ksc5338d-d.pdf
KSC5338D
Виробник: onsemi
Description: TRANS NPN 450V 5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+74.92 грн
10+ 59.16 грн
100+ 45.98 грн
500+ 36.58 грн
1000+ 29.79 грн
Мінімальне замовлення: 4
IRLS630A IRLS630A.pdf
IRLS630A
Виробник: onsemi
Description: MOSFET N-CH 200V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
товар відсутній
KSC5338DTU ksc5338d-d.pdf
KSC5338DTU
Виробник: onsemi
Description: TRANS NPN 450V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+99.18 грн
10+ 79.7 грн
100+ 63.44 грн
500+ 50.38 грн
Мінімальне замовлення: 3
QSB34CGR ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw
QSB34CGR
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
на замовлення 640932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+77.06 грн
10+ 47 грн
100+ 34.79 грн
500+ 30.01 грн
Мінімальне замовлення: 4
FJP5027RTU fjp5027-d.pdf
FJP5027RTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+72.07 грн
10+ 57.03 грн
Мінімальне замовлення: 4
FDW2501N FDW2501N.pdf
FDW2501N
Виробник: onsemi
Description: MOSFET 2N-CH 20V 6A 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
товар відсутній
FJP5027OTU fjp5027-d.pdf
FJP5027OTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+81.34 грн
10+ 64.11 грн
100+ 49.89 грн
500+ 39.68 грн
1000+ 32.33 грн
2000+ 30.43 грн
Мінімальне замовлення: 4
MM74HC589MX MM74HC589.pdf
MM74HC589MX
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
MM74HC589SJ MM74HC589.pdf
MM74HC589SJ
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
IRLR230ATM IRLR,U230A.pdf
IRLR230ATM
Виробник: onsemi
Description: MOSFET N-CH 200V 7.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
товар відсутній
NC7WB3306K8X NC7WB3306.pdf
NC7WB3306K8X
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
товар відсутній
FJPF5027OTU fjpf5027-d.pdf
FJPF5027OTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+82.05 грн
50+ 63.82 грн
100+ 50.57 грн
Мінімальне замовлення: 4
FJPF5027RTU fjpf5027-d.pdf
FJPF5027RTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товар відсутній
FQD5N40TF
FQD5N40TF
Виробник: onsemi
Description: MOSFET N-CH 400V 3.4A DPAK
товар відсутній
FJP5027TU fjp5027-d.pdf
FJP5027TU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
товар відсутній
KA3845B KA3842B-45B.pdf
KA3845B
Виробник: onsemi
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
товар відсутній
FJPF5027TU fjpf5027-d.pdf
FJPF5027TU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товар відсутній
FJPF5021OTU fjpf5021-d.pdf
FJPF5021OTU
Виробник: onsemi
Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+95.61 грн
50+ 73.81 грн
100+ 58.5 грн
Мінімальне замовлення: 3
MM74HC589SJX MM74HC589.pdf
MM74HC589SJX
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
MM74HC589M MM74HC589.pdf
MM74HC589M
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
FJPF5021RTU fjpf5021-d.pdf
FJPF5021RTU
Виробник: onsemi
Description: TRANS NPN 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 40 W
товар відсутній
FQPF2P40 FQPF2P40.pdf
FQPF2P40
Виробник: onsemi
Description: MOSFET P-CH 400V 1.34A TO220F
товар відсутній
FQU30N06LTU FQD30N06L.pdf
FQU30N06LTU
Виробник: onsemi
Description: MOSFET N-CH 60V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
HUF76609D3ST ONSM-S-A0003590912-1.pdf?t.download=true&u=5oefqw
HUF76609D3ST
Виробник: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
товар відсутній
FQD19N10TF
FQD19N10TF
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товар відсутній
FQD19N10TM fqd19n10-d.pdf
FQD19N10TM
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товар відсутній
FQD17P06TM ONSM-S-A0003587829-1.pdf?t.download=true&u=5oefqw
FQD17P06TM
Виробник: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+27.64 грн
5000+ 25.35 грн
12500+ 24.18 грн
Мінімальне замовлення: 2500
KSC5039H2 KSC5039.pdf
KSC5039H2
Виробник: onsemi
Description: TRANS NPN 400V 5A TO220F-3
товар відсутній
NZT45H8 nzt45h8-d.pdf
NZT45H8
Виробник: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQD30N06LTM FQD30N06L.pdf
FQD30N06LTM
Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
FQB13N10LTM FQB13N10L, FQI13N10L.pdf
FQB13N10LTM
Виробник: onsemi
Description: MOSFET N-CH 100V 12.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
товар відсутній
FQD14N15TM FQD14N15%2C%20FQU14N15.pdf
FQD14N15TM
Виробник: onsemi
Description: MOSFET N-CH 150V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
товар відсутній
FQD6N40CTM fqd6n40c-d.pdf
FQD6N40CTM
Виробник: onsemi
Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
NZT44H8 D44H8_NZT44H8.pdf
NZT44H8
Виробник: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товар відсутній
FQB1P50TM fqb1p50-d.pdf
FQB1P50TM
Виробник: onsemi
Description: MOSFET P-CH 500V 1.5A D2PAK
товар відсутній
FQB13N06LTM FQB13N06L%2C%20FQI13N06L.pdf
FQB13N06LTM
Виробник: onsemi
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
FYP2004DNTU FYP2004DN.pdf
FYP2004DNTU
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товар відсутній
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