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TIP141T TIP141T onsemi TIP140-42F.pdf Description: TRANS NPN DARL 80V 10A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
товар відсутній
FQD7N30TF FQD7N30TF onsemi fqd7n30-d.pdf Description: MOSFET N-CH 300V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
товар відсутній
TIP142TTU TIP142TTU onsemi TIP142T.pdf Description: TRANS NPN DARL 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
товар відсутній
H11L3SR2M H11L3SR2M onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
1000+30.34 грн
2000+ 27.75 грн
5000+ 27.13 грн
10000+ 24.87 грн
Мінімальне замовлення: 1000
H11L3SVM H11L3SVM onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
FYPF2010DNTU FYPF2010DNTU onsemi FYPF2010DN_RevA_Sep2002.pdf Description: DIODE ARR SCHOTT 100V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
H11L3TM H11L3TM onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
H11L3TVM H11L3TVM onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
TIP147TTU TIP147TTU onsemi tip147t-d.pdf Description: TRANS PNP DARL 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
товар відсутній
MOC3031SDM MOC3031SDM onsemi FAIR-S-A0002364056-1.pdf?t.download=true&u=5oefqw Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Obsolete
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
товар відсутній
MBR760 MBR760 onsemi mbr760-d.pdf Description: DIODE SCHOTTKY 60V 7.5A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 1266 шт:
термін постачання 21-31 дні (днів)
3+95.46 грн
10+ 76.58 грн
100+ 60.95 грн
500+ 48.4 грн
1000+ 41.07 грн
Мінімальне замовлення: 3
HUF75321D3ST HUF75321D3ST onsemi ONSM-S-A0003591046-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+25.79 грн
5000+ 23.6 грн
12500+ 22.71 грн
Мінімальне замовлення: 2500
FQPF5N50CTTU FQPF5N50CTTU onsemi FQP5N50C, FQPF5N50C.pdf Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
FQPF5N50CT FQPF5N50CT onsemi FQP5N50C, FQPF5N50C.pdf Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
FQP19N20CTSTU FQP19N20CTSTU onsemi Description: MOSFET N-CH 200V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
FQB30N06LTM FQB30N06LTM onsemi fqb30n06l-d.pdf Description: MOSFET N-CH 60V 32A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
KSC5338DWTM KSC5338DWTM onsemi ksc5338d-d.pdf Description: TRANS NPN 450V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
товар відсутній
MM74HC594N MM74HC594N onsemi MM74HC594.pdf Description: IC SHIFT REGISTER 8-BIT 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
FSA3157L6X FSA3157L6X onsemi ONSM-S-A0003544200-1.pdf?t.download=true&u=5oefqw Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
FFPF10U60DNTU FFPF10U60DNTU onsemi FFPF10U60DN.pdf Description: DIODE ARR AVAL 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
FQPF16N25C FQPF16N25C onsemi fqp16n25c-d.pdf Description: MOSFET N-CH 250V 15.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
HUFA75309P3 HUFA75309P3 onsemi HUFA75309P3,D3,D3S.pdf Description: MOSFET N-CH 55V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
FQD7N30TM FQD7N30TM onsemi fqd7n30-d.pdf Description: MOSFET N-CH 300V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
товар відсутній
KSC5603D KSC5603D onsemi ksc5603d-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 100 W
товар відсутній
KSC5603DTU KSC5603DTU onsemi ksc5603d-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 100 W
на замовлення 4305 шт:
термін постачання 21-31 дні (днів)
3+103.89 грн
10+ 81.99 грн
100+ 63.76 грн
500+ 50.72 грн
1000+ 41.32 грн
2000+ 38.9 грн
Мінімальне замовлення: 3
FQD3P50TM FQD3P50TM onsemi fqd3p50tm-d.pdf Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
HUF75617D3ST HUF75617D3ST onsemi HUF75617D3,D3S.pdf Description: MOSFET N-CH 100V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
товар відсутній
FQD3P50TF FQD3P50TF onsemi FQD3P50, FQU3P50.pdf Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
FFPF30U60STU FFPF30U60STU onsemi FFPF30U60S.pdf Description: DIODE AVAL 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товар відсутній
FJPF13009TU FJPF13009TU onsemi fjpf13009-d.pdf Description: TRANS NPN 400V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
товар відсутній
FQP16N25C FQP16N25C onsemi FQP_PF16N25C_Rev_March2013.pdf Description: MOSFET N-CH 250V 15.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
FQP3P50 FQP3P50 onsemi ONSM-S-A0003584397-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 500V 2.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
J106_D26Z J106_D26Z onsemi J105,6,7.pdf Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 6 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 15 V
товар відсутній
FQP24N08 FQP24N08 onsemi fqp24n08-d.pdf Description: MOSFET N-CH 80V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
KSE5742 KSE5742 onsemi KSE5740-5742.pdf Description: TRANS NPN DARL 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
товар відсутній
H11L3FM H11L3FM onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
H11L3FR2M H11L3FR2M onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
H11L3FVM H11L3FVM onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
товар відсутній
H11L3FR2VM H11L3FR2VM onsemi ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
FQD6N40TF FQD6N40TF onsemi FQD6N40,%20FQU6N40.pdf Description: MOSFET N-CH 400V 4.2A DPAK
товар відсутній
NDS9925A NDS9925A onsemi NDS9925A.pdf Description: MOSFET 2N-CH 20V 4.5A 8-SOIC
товар відсутній
FQPF2N80 FQPF2N80 onsemi fqpf2n80-d.pdf Description: MOSFET N-CH 800V 1.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 701 шт:
термін постачання 21-31 дні (днів)
3+97.57 грн
50+ 74.99 грн
100+ 61.7 грн
500+ 48.99 грн
Мінімальне замовлення: 3
ILC7011AIC529X ILC7011AIC529X onsemi ILC7010,11.pdf Description: IC REG LINEAR 2.9V 80MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Over Temperature
Current - Supply (Max): 110 µA
товар відсутній
ILC7011AIC528X ILC7011AIC528X onsemi ILC7010,11.pdf Description: IC REG LINEAR 2.8V 80MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 65dB (120Hz)
Protection Features: Over Temperature
Current - Supply (Max): 110 µA
товар відсутній
MTP3055VL MTP3055VL onsemi MTP3055VL_Rev4_Aug06.pdf Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
3+97.57 грн
Мінімальне замовлення: 3
FJP9100TU FJP9100TU onsemi FJP9100.pdf Description: TRANS NPN DARL 275V 4A TO220-3
товар відсутній
FQPF3N80C FQPF3N80C onsemi fqpf3n80c-d.pdf Description: MOSFET N-CH 800V 3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
3+117.92 грн
50+ 91.35 грн
100+ 75.16 грн
Мінімальне замовлення: 3
RHRD660S9A RHRD660S9A onsemi Description: DIODE GEN PURP 600V 6A TO252AA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
FFPF10U30DNTU FFPF10U30DNTU onsemi FFPF10U30DN.pdf Description: DIODE ARR AVAL 300V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
FQP12P10 FQP12P10 onsemi fqp12p10-d.pdf Description: MOSFET P-CH 100V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
KBU4G KBU4G onsemi KBU4A.pdf Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
HUFA76407DK8T HUFA76407DK8T onsemi HUFA76407DK8_DS.pdf Description: MOSFET 2N-CH 60V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
KBU4B KBU4B onsemi KBU4A.pdf Description: BRIDGE RECT 1PHASE 100V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
FQPF27P06 FQPF27P06 onsemi fqpf27p06-d.pdf Description: MOSFET P-CH 60V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
KBU4D KBU4D onsemi KBU4A.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
MOCD207R2VM MOCD207R2VM onsemi mocd217m-d.pdf Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
2500+28.64 грн
5000+ 26.95 грн
12500+ 26.33 грн
Мінімальне замовлення: 2500
MOCD207R1VM MOCD207R1VM onsemi MOCD207,8-M.pdf Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 3µs, 2.8µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
товар відсутній
FQS4901TF FQS4901TF onsemi fqs4901-d.pdf Description: MOSFET 2N-CH 400V 450MA 8SOIC
товар відсутній
MOCD208R2VM MOCD208R2VM onsemi mocd217m-d.pdf Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
товар відсутній
MOCD213R2VM MOCD213R2VM onsemi ONSM-S-A0006351795-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 3µs, 2.8µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+26.02 грн
Мінімальне замовлення: 2500
TIP141T TIP140-42F.pdf
TIP141T
Виробник: onsemi
Description: TRANS NPN DARL 80V 10A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
товар відсутній
FQD7N30TF fqd7n30-d.pdf
FQD7N30TF
Виробник: onsemi
Description: MOSFET N-CH 300V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
товар відсутній
TIP142TTU TIP142T.pdf
TIP142TTU
Виробник: onsemi
Description: TRANS NPN DARL 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
товар відсутній
H11L3SR2M ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3SR2M
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+30.34 грн
2000+ 27.75 грн
5000+ 27.13 грн
10000+ 24.87 грн
Мінімальне замовлення: 1000
H11L3SVM ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3SVM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
FYPF2010DNTU FYPF2010DN_RevA_Sep2002.pdf
FYPF2010DNTU
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
H11L3TM ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3TM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
H11L3TVM ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3TVM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
TIP147TTU tip147t-d.pdf
TIP147TTU
Виробник: onsemi
Description: TRANS PNP DARL 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
товар відсутній
MOC3031SDM FAIR-S-A0002364056-1.pdf?t.download=true&u=5oefqw
MOC3031SDM
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Obsolete
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
товар відсутній
MBR760 mbr760-d.pdf
MBR760
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 7.5A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 1266 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+95.46 грн
10+ 76.58 грн
100+ 60.95 грн
500+ 48.4 грн
1000+ 41.07 грн
Мінімальне замовлення: 3
HUF75321D3ST ONSM-S-A0003591046-1.pdf?t.download=true&u=5oefqw
HUF75321D3ST
Виробник: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+25.79 грн
5000+ 23.6 грн
12500+ 22.71 грн
Мінімальне замовлення: 2500
FQPF5N50CTTU FQP5N50C, FQPF5N50C.pdf
FQPF5N50CTTU
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
FQPF5N50CT FQP5N50C, FQPF5N50C.pdf
FQPF5N50CT
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
FQP19N20CTSTU
FQP19N20CTSTU
Виробник: onsemi
Description: MOSFET N-CH 200V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
FQB30N06LTM fqb30n06l-d.pdf
FQB30N06LTM
Виробник: onsemi
Description: MOSFET N-CH 60V 32A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
товар відсутній
KSC5338DWTM ksc5338d-d.pdf
KSC5338DWTM
Виробник: onsemi
Description: TRANS NPN 450V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
товар відсутній
MM74HC594N MM74HC594.pdf
MM74HC594N
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
FSA3157L6X ONSM-S-A0003544200-1.pdf?t.download=true&u=5oefqw
FSA3157L6X
Виробник: onsemi
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
FFPF10U60DNTU FFPF10U60DN.pdf
FFPF10U60DNTU
Виробник: onsemi
Description: DIODE ARR AVAL 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
FQPF16N25C fqp16n25c-d.pdf
FQPF16N25C
Виробник: onsemi
Description: MOSFET N-CH 250V 15.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
HUFA75309P3 HUFA75309P3,D3,D3S.pdf
HUFA75309P3
Виробник: onsemi
Description: MOSFET N-CH 55V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
FQD7N30TM fqd7n30-d.pdf
FQD7N30TM
Виробник: onsemi
Description: MOSFET N-CH 300V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
товар відсутній
KSC5603D ksc5603d-d.pdf
KSC5603D
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 100 W
товар відсутній
KSC5603DTU ksc5603d-d.pdf
KSC5603DTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 100 W
на замовлення 4305 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.89 грн
10+ 81.99 грн
100+ 63.76 грн
500+ 50.72 грн
1000+ 41.32 грн
2000+ 38.9 грн
Мінімальне замовлення: 3
FQD3P50TM fqd3p50tm-d.pdf
FQD3P50TM
Виробник: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
HUF75617D3ST HUF75617D3,D3S.pdf
HUF75617D3ST
Виробник: onsemi
Description: MOSFET N-CH 100V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
товар відсутній
FQD3P50TF FQD3P50, FQU3P50.pdf
FQD3P50TF
Виробник: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
FFPF30U60STU FFPF30U60S.pdf
FFPF30U60STU
Виробник: onsemi
Description: DIODE AVAL 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товар відсутній
FJPF13009TU fjpf13009-d.pdf
FJPF13009TU
Виробник: onsemi
Description: TRANS NPN 400V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 50 W
товар відсутній
FQP16N25C FQP_PF16N25C_Rev_March2013.pdf
FQP16N25C
Виробник: onsemi
Description: MOSFET N-CH 250V 15.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
FQP3P50 ONSM-S-A0003584397-1.pdf?t.download=true&u=5oefqw
FQP3P50
Виробник: onsemi
Description: MOSFET P-CH 500V 2.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
J106_D26Z J105,6,7.pdf
J106_D26Z
Виробник: onsemi
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 6 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 15 V
товар відсутній
FQP24N08 fqp24n08-d.pdf
FQP24N08
Виробник: onsemi
Description: MOSFET N-CH 80V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
KSE5742 KSE5740-5742.pdf
KSE5742
Виробник: onsemi
Description: TRANS NPN DARL 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
товар відсутній
H11L3FM ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3FM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
H11L3FR2M ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3FR2M
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
H11L3FVM ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3FVM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
товар відсутній
H11L3FR2VM ONSM-S-A0003590761-1.pdf?t.download=true&u=5oefqw
H11L3FR2VM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
FQD6N40TF FQD6N40,%20FQU6N40.pdf
FQD6N40TF
Виробник: onsemi
Description: MOSFET N-CH 400V 4.2A DPAK
товар відсутній
NDS9925A NDS9925A.pdf
NDS9925A
Виробник: onsemi
Description: MOSFET 2N-CH 20V 4.5A 8-SOIC
товар відсутній
FQPF2N80 fqpf2n80-d.pdf
FQPF2N80
Виробник: onsemi
Description: MOSFET N-CH 800V 1.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 701 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+97.57 грн
50+ 74.99 грн
100+ 61.7 грн
500+ 48.99 грн
Мінімальне замовлення: 3
ILC7011AIC529X ILC7010,11.pdf
ILC7011AIC529X
Виробник: onsemi
Description: IC REG LINEAR 2.9V 80MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Over Temperature
Current - Supply (Max): 110 µA
товар відсутній
ILC7011AIC528X ILC7010,11.pdf
ILC7011AIC528X
Виробник: onsemi
Description: IC REG LINEAR 2.8V 80MA SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 65dB (120Hz)
Protection Features: Over Temperature
Current - Supply (Max): 110 µA
товар відсутній
MTP3055VL MTP3055VL_Rev4_Aug06.pdf
MTP3055VL
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+97.57 грн
Мінімальне замовлення: 3
FJP9100TU FJP9100.pdf
FJP9100TU
Виробник: onsemi
Description: TRANS NPN DARL 275V 4A TO220-3
товар відсутній
FQPF3N80C fqpf3n80c-d.pdf
FQPF3N80C
Виробник: onsemi
Description: MOSFET N-CH 800V 3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+117.92 грн
50+ 91.35 грн
100+ 75.16 грн
Мінімальне замовлення: 3
RHRD660S9A
RHRD660S9A
Виробник: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
FFPF10U30DNTU FFPF10U30DN.pdf
FFPF10U30DNTU
Виробник: onsemi
Description: DIODE ARR AVAL 300V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
FQP12P10 fqp12p10-d.pdf
FQP12P10
Виробник: onsemi
Description: MOSFET P-CH 100V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
KBU4G KBU4A.pdf
KBU4G
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
HUFA76407DK8T HUFA76407DK8_DS.pdf
HUFA76407DK8T
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
KBU4B KBU4A.pdf
KBU4B
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 100V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
FQPF27P06 fqpf27p06-d.pdf
FQPF27P06
Виробник: onsemi
Description: MOSFET P-CH 60V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
KBU4D KBU4A.pdf
KBU4D
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 200V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
MOCD207R2VM mocd217m-d.pdf
MOCD207R2VM
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+28.64 грн
5000+ 26.95 грн
12500+ 26.33 грн
Мінімальне замовлення: 2500
MOCD207R1VM MOCD207,8-M.pdf
MOCD207R1VM
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 3µs, 2.8µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
товар відсутній
FQS4901TF fqs4901-d.pdf
FQS4901TF
Виробник: onsemi
Description: MOSFET 2N-CH 400V 450MA 8SOIC
товар відсутній
MOCD208R2VM mocd217m-d.pdf
MOCD208R2VM
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
товар відсутній
MOCD213R2VM ONSM-S-A0006351795-1.pdf?t.download=true&u=5oefqw
MOCD213R2VM
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 3µs, 2.8µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+26.02 грн
Мінімальне замовлення: 2500
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