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MMSZ5230BT1G MMSZ5230BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 5351 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
38+ 7.41 грн
100+ 4.01 грн
500+ 2.96 грн
1000+ 2.05 грн
Мінімальне замовлення: 25
MMSZ5233BT1G MMSZ5233BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
на замовлення 68668 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5234BT1G MMSZ5234BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 6.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 228015 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5235BT1G MMSZ5235BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
на замовлення 21182 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.55 грн
100+ 4.08 грн
500+ 3.01 грн
1000+ 2.09 грн
Мінімальне замовлення: 25
MMSZ5236BT1G MMSZ5236BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 7.5V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
на замовлення 46790 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5239BT1G MMSZ5239BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
на замовлення 23546 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5240BT1G MMSZ5240BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 10V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
на замовлення 34576 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5242BT1G MMSZ5242BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
на замовлення 36023 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5244BT1G MMSZ5244BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 14V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 73037 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5245BT1G MMSZ5245BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 33811 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5250BT1G MMSZ5250BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 20V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
на замовлення 192670 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5251BT1G MMSZ5251BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 22V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
на замовлення 25997 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5257BT1G MMSZ5257BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 33V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
на замовлення 26081 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5260BT1G MMSZ5260BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 43V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 45915 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5261BT1G MMSZ5261BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 47V 500MW SOD123
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
MMSZ5V1T1G MMSZ5V1T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
товар відсутній
MMSZ6V2T1G MMSZ6V2T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 6.2V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 16685 шт:
термін постачання 21-31 дні (днів)
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMUN2111LT1G MMUN2111LT1G onsemi dta114e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 438960 шт:
термін постачання 21-31 дні (днів)
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MMUN2211LT1G MMUN2211LT1G onsemi dtc114e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 156172 шт:
термін постачання 21-31 дні (днів)
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MMUN2212LT1G MMUN2212LT1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 23332 шт:
термін постачання 21-31 дні (днів)
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MMUN2213LT1G MMUN2213LT1G onsemi dtc144e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 19654 шт:
термін постачання 21-31 дні (днів)
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MPS2222ARLRAG MPS2222ARLRAG onsemi mps2222-d.pdf Description: TRANS NPN 40V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
MPS2907ARLRAG MPS2907ARLRAG onsemi mps2907a-d.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
MPS8099RLRAG MPS8099RLRAG onsemi mps8098-d.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товар відсутній
MPSA05RLRAG MPSA05RLRAG onsemi mpsa05-d.pdf Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
MPSA06RLRAG MPSA06RLRAG onsemi mpsa05-d.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товар відсутній
MPSA13RLRAG MPSA13RLRAG onsemi mpsa13-d.pdf Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
MPSA18RLRAG MPSA18RLRAG onsemi mpsa18-d.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній
MPSA29RLRPG MPSA29RLRPG onsemi mpsa28-d.pdf Description: TRANS NPN DARL 100V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
товар відсутній
MPSA42RLRAG MPSA42RLRAG onsemi mpsa42-d.pdf Description: TRANS NPN 300V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
товар відсутній
MPSA44RLRAG MPSA44RLRAG onsemi mpsa44-d.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
товар відсутній
MPSA56RLRAG MPSA56RLRAG onsemi mpsa05-d.pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товар відсутній
MR754RLG MR754RLG onsemi mr750-d.pdf Description: DIODE GP 400V 6A MICRODE BUTTON
Packaging: Cut Tape (CT)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товар відсутній
MR756RLG MR756RLG onsemi mr750-d.pdf Description: DIODE GP 600V 6A MICRODE BUTTON
Packaging: Cut Tape (CT)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
MR852RLG MR852RLG onsemi mr850-d.pdf Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
MR856RLG MR856RLG onsemi mr850-d.pdf Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
MRA4003T3G MRA4003T3G onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 300V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
MRA4005T3G MRA4005T3G onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 165270 шт:
термін постачання 21-31 дні (днів)
13+23.52 грн
18+ 15.99 грн
100+ 8.05 грн
500+ 6.16 грн
1000+ 4.57 грн
2000+ 3.85 грн
Мінімальне замовлення: 13
MTD5P06VT4G MTD5P06VT4G onsemi mtd5p06v-d.pdf Description: MOSFET P-CH 60V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
MUN2211T1G MUN2211T1G onsemi dtc114e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 50299 шт:
термін постачання 21-31 дні (днів)
27+10.69 грн
39+ 7.14 грн
100+ 3.87 грн
500+ 2.85 грн
1000+ 1.98 грн
Мінімальне замовлення: 27
MUN5311DW1T1G MUN5311DW1T1G onsemi dtc114ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 536538 шт:
термін постачання 21-31 дні (днів)
18+16.39 грн
26+ 10.77 грн
100+ 5.26 грн
500+ 4.12 грн
1000+ 2.86 грн
Мінімальне замовлення: 18
MUR1100ERLG MUR1100ERLG onsemi mur180e-d.pdf description Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
9+34.21 грн
10+ 28 грн
100+ 19.47 грн
Мінімальне замовлення: 9
MUR110RLG MUR110RLG onsemi mur120-d.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
10+29.93 грн
13+ 22.51 грн
100+ 13.48 грн
500+ 11.71 грн
1000+ 7.97 грн
2000+ 7.33 грн
Мінімальне замовлення: 10
MUR115RLG MUR115RLG onsemi mur120-d.pdf Description: DIODE GEN PURP 150V 1A AXIAL
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
MUR120RLG MUR120RLG onsemi mur120-d.pdf description Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 2758 шт:
термін постачання 21-31 дні (днів)
10+29.93 грн
14+ 20.38 грн
100+ 10.3 грн
500+ 8.57 грн
1000+ 6.67 грн
2000+ 5.97 грн
Мінімальне замовлення: 10
MUR140RLG MUR140RLG onsemi mur120-d.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 12335 шт:
термін постачання 21-31 дні (днів)
10+29.22 грн
12+ 23.61 грн
100+ 16.42 грн
500+ 12.04 грн
1000+ 9.78 грн
2000+ 8.75 грн
Мінімальне замовлення: 10
MUR160RLG MUR160RLG onsemi mur120-d.pdf description Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 23461 шт:
термін постачання 21-31 дні (днів)
13+23.52 грн
16+ 17.71 грн
100+ 10.61 грн
500+ 9.22 грн
1000+ 6.27 грн
2000+ 5.77 грн
Мінімальне замовлення: 13
MUR4100ERLG MUR4100ERLG onsemi mur480e-d.pdf Description: DIODE GEN PURP 1KV 4A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
товар відсутній
MUR410RLG MUR410RLG onsemi mur420-d.pdf Description: DIODE GEN PURP 100V 4A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890
Current - Reverse Leakage @ Vr: 5
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
товар відсутній
mur460rlg mur460rlg onsemi mur420-d.pdf Description: DIODE GEN PURP 600V 4A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 26306 шт:
термін постачання 21-31 дні (днів)
8+39.2 грн
10+ 33.22 грн
100+ 23 грн
500+ 18.04 грн
Мінімальне замовлення: 8
MURA120T3G MURA120T3G onsemi mura115t3-d.pdf Description: DIODE GEN PURP 200V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
MURS105T3G MURS105T3G onsemi murs120t3-d.pdf Description: DIODE GEN PURP 50V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
MURS110T3G MURS110T3G onsemi murs120t3-d.pdf Description: DIODE GEN PURP 100V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 7050 шт:
термін постачання 21-31 дні (днів)
10+30.65 грн
12+ 23.2 грн
100+ 13.91 грн
500+ 12.09 грн
1000+ 8.22 грн
Мінімальне замовлення: 10
MURS140T3G MURS140T3G onsemi murs120t3-d.pdf Description: DIODE GEN PURP 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
11+27.08 грн
14+ 20.18 грн
100+ 12.1 грн
500+ 10.51 грн
1000+ 7.15 грн
Мінімальне замовлення: 11
MURS160T3G MURS160T3G onsemi murs120t3-d.pdf Description: DIODE GEN PURP 600V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURS260T3G MURS260T3G onsemi murs260t3-d.pdf Description: DIODE GEN PURP 600V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURS340T3G MURS340T3G onsemi murs320t3-d.pdf Description: DIODE GEN PURP 400V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
7+41.34 грн
10+ 34.18 грн
100+ 23.77 грн
500+ 17.41 грн
1000+ 14.15 грн
Мінімальне замовлення: 7
NCP100SNT1G NCP100SNT1G onsemi NCP100-D.pdf Description: IC VREF SHUNT ADJ 1.7% 5TSOP
Packaging: Cut Tape (CT)
Tolerance: ±1.7%
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 0.9V
Current - Cathode: 100 µA
Current - Output: 20 mA
Voltage - Output (Max): 6 V
товар відсутній
NCP303LSN30T1G NCP303LSN30T1G onsemi ncp302-d.pdf Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 3V
Supplier Device Package: 5-TSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
NCP303LSN45T1G NCP303LSN45T1G onsemi ncp302-d.pdf Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.5V
Supplier Device Package: 5-TSOP
DigiKey Programmable: Not Verified
товар відсутній
MMSZ5230BT1G mmsz5221bt1-d.pdf
MMSZ5230BT1G
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 5351 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
38+ 7.41 грн
100+ 4.01 грн
500+ 2.96 грн
1000+ 2.05 грн
Мінімальне замовлення: 25
MMSZ5233BT1G mmsz5221bt1-d.pdf
MMSZ5233BT1G
Виробник: onsemi
Description: DIODE ZENER 6V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
на замовлення 68668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5234BT1G mmsz5221bt1-d.pdf
MMSZ5234BT1G
Виробник: onsemi
Description: DIODE ZENER 6.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 228015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5235BT1G mmsz5221bt1-d.pdf
MMSZ5235BT1G
Виробник: onsemi
Description: DIODE ZENER 6.8V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
на замовлення 21182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.55 грн
100+ 4.08 грн
500+ 3.01 грн
1000+ 2.09 грн
Мінімальне замовлення: 25
MMSZ5236BT1G mmsz5221bt1-d.pdf
MMSZ5236BT1G
Виробник: onsemi
Description: DIODE ZENER 7.5V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
на замовлення 46790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5239BT1G mmsz5221bt1-d.pdf
MMSZ5239BT1G
Виробник: onsemi
Description: DIODE ZENER 9.1V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
на замовлення 23546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5240BT1G mmsz5221bt1-d.pdf
MMSZ5240BT1G
Виробник: onsemi
Description: DIODE ZENER 10V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
на замовлення 34576 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5242BT1G mmsz5221bt1-d.pdf
MMSZ5242BT1G
Виробник: onsemi
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
на замовлення 36023 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5244BT1G mmsz5221bt1-d.pdf
MMSZ5244BT1G
Виробник: onsemi
Description: DIODE ZENER 14V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 73037 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5245BT1G mmsz5221bt1-d.pdf
MMSZ5245BT1G
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 33811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5250BT1G mmsz5221bt1-d.pdf
MMSZ5250BT1G
Виробник: onsemi
Description: DIODE ZENER 20V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
на замовлення 192670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5251BT1G mmsz5221bt1-d.pdf
MMSZ5251BT1G
Виробник: onsemi
Description: DIODE ZENER 22V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
на замовлення 25997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5257BT1G mmsz5221bt1-d.pdf
MMSZ5257BT1G
Виробник: onsemi
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
на замовлення 26081 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5260BT1G mmsz5221bt1-d.pdf
MMSZ5260BT1G
Виробник: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 45915 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMSZ5261BT1G mmsz5221bt1-d.pdf
MMSZ5261BT1G
Виробник: onsemi
Description: DIODE ZENER 47V 500MW SOD123
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
MMSZ5V1T1G mmsz2v4t1-d.pdf
MMSZ5V1T1G
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
товар відсутній
MMSZ6V2T1G mmsz2v4t1-d.pdf
MMSZ6V2T1G
Виробник: onsemi
Description: DIODE ZENER 6.2V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 16685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.4 грн
37+ 7.62 грн
100+ 4.12 грн
500+ 3.04 грн
1000+ 2.11 грн
Мінімальне замовлення: 25
MMUN2111LT1G dta114e-d.pdf
MMUN2111LT1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 438960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MMUN2211LT1G dtc114e-d.pdf
MMUN2211LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 156172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MMUN2212LT1G dtc124e-d.pdf
MMUN2212LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 23332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MMUN2213LT1G dtc144e-d.pdf
MMUN2213LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 19654 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
34+8.55 грн
49+ 5.7 грн
100+ 3.06 грн
500+ 2.26 грн
1000+ 1.57 грн
Мінімальне замовлення: 34
MPS2222ARLRAG mps2222-d.pdf
MPS2222ARLRAG
Виробник: onsemi
Description: TRANS NPN 40V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
MPS2907ARLRAG mps2907a-d.pdf
MPS2907ARLRAG
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
MPS8099RLRAG mps8098-d.pdf
MPS8099RLRAG
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товар відсутній
MPSA05RLRAG mpsa05-d.pdf
MPSA05RLRAG
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
MPSA06RLRAG mpsa05-d.pdf
MPSA06RLRAG
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товар відсутній
MPSA13RLRAG mpsa13-d.pdf
MPSA13RLRAG
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
MPSA18RLRAG mpsa18-d.pdf
MPSA18RLRAG
Виробник: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній
MPSA29RLRPG mpsa28-d.pdf
MPSA29RLRPG
Виробник: onsemi
Description: TRANS NPN DARL 100V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
товар відсутній
MPSA42RLRAG mpsa42-d.pdf
MPSA42RLRAG
Виробник: onsemi
Description: TRANS NPN 300V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
товар відсутній
MPSA44RLRAG mpsa44-d.pdf
MPSA44RLRAG
Виробник: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
товар відсутній
MPSA56RLRAG mpsa05-d.pdf
MPSA56RLRAG
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товар відсутній
MR754RLG mr750-d.pdf
MR754RLG
Виробник: onsemi
Description: DIODE GP 400V 6A MICRODE BUTTON
Packaging: Cut Tape (CT)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товар відсутній
MR756RLG mr750-d.pdf
MR756RLG
Виробник: onsemi
Description: DIODE GP 600V 6A MICRODE BUTTON
Packaging: Cut Tape (CT)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
MR852RLG mr850-d.pdf
MR852RLG
Виробник: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
MR856RLG mr850-d.pdf
MR856RLG
Виробник: onsemi
Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
MRA4003T3G mra4003t3-d.pdf
MRA4003T3G
Виробник: onsemi
Description: DIODE GEN PURP 300V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
MRA4005T3G mra4003t3-d.pdf
MRA4005T3G
Виробник: onsemi
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 165270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+23.52 грн
18+ 15.99 грн
100+ 8.05 грн
500+ 6.16 грн
1000+ 4.57 грн
2000+ 3.85 грн
Мінімальне замовлення: 13
MTD5P06VT4G mtd5p06v-d.pdf
MTD5P06VT4G
Виробник: onsemi
Description: MOSFET P-CH 60V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
MUN2211T1G dtc114e-d.pdf
MUN2211T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 50299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
27+10.69 грн
39+ 7.14 грн
100+ 3.87 грн
500+ 2.85 грн
1000+ 1.98 грн
Мінімальне замовлення: 27
MUN5311DW1T1G dtc114ep-d.pdf
MUN5311DW1T1G
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 536538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
18+16.39 грн
26+ 10.77 грн
100+ 5.26 грн
500+ 4.12 грн
1000+ 2.86 грн
Мінімальне замовлення: 18
MUR1100ERLG description mur180e-d.pdf
MUR1100ERLG
Виробник: onsemi
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.21 грн
10+ 28 грн
100+ 19.47 грн
Мінімальне замовлення: 9
MUR110RLG mur120-d.pdf
MUR110RLG
Виробник: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.93 грн
13+ 22.51 грн
100+ 13.48 грн
500+ 11.71 грн
1000+ 7.97 грн
2000+ 7.33 грн
Мінімальне замовлення: 10
MUR115RLG mur120-d.pdf
MUR115RLG
Виробник: onsemi
Description: DIODE GEN PURP 150V 1A AXIAL
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
MUR120RLG description mur120-d.pdf
MUR120RLG
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 2758 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.93 грн
14+ 20.38 грн
100+ 10.3 грн
500+ 8.57 грн
1000+ 6.67 грн
2000+ 5.97 грн
Мінімальне замовлення: 10
MUR140RLG mur120-d.pdf
MUR140RLG
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 12335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.22 грн
12+ 23.61 грн
100+ 16.42 грн
500+ 12.04 грн
1000+ 9.78 грн
2000+ 8.75 грн
Мінімальне замовлення: 10
MUR160RLG description mur120-d.pdf
MUR160RLG
Виробник: onsemi
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 23461 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+23.52 грн
16+ 17.71 грн
100+ 10.61 грн
500+ 9.22 грн
1000+ 6.27 грн
2000+ 5.77 грн
Мінімальне замовлення: 13
MUR4100ERLG mur480e-d.pdf
MUR4100ERLG
Виробник: onsemi
Description: DIODE GEN PURP 1KV 4A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
товар відсутній
MUR410RLG mur420-d.pdf
MUR410RLG
Виробник: onsemi
Description: DIODE GEN PURP 100V 4A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890
Current - Reverse Leakage @ Vr: 5
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
товар відсутній
mur460rlg mur420-d.pdf
mur460rlg
Виробник: onsemi
Description: DIODE GEN PURP 600V 4A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 26306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+39.2 грн
10+ 33.22 грн
100+ 23 грн
500+ 18.04 грн
Мінімальне замовлення: 8
MURA120T3G mura115t3-d.pdf
MURA120T3G
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
MURS105T3G murs120t3-d.pdf
MURS105T3G
Виробник: onsemi
Description: DIODE GEN PURP 50V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
MURS110T3G murs120t3-d.pdf
MURS110T3G
Виробник: onsemi
Description: DIODE GEN PURP 100V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 7050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.65 грн
12+ 23.2 грн
100+ 13.91 грн
500+ 12.09 грн
1000+ 8.22 грн
Мінімальне замовлення: 10
MURS140T3G murs120t3-d.pdf
MURS140T3G
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.08 грн
14+ 20.18 грн
100+ 12.1 грн
500+ 10.51 грн
1000+ 7.15 грн
Мінімальне замовлення: 11
MURS160T3G murs120t3-d.pdf
MURS160T3G
Виробник: onsemi
Description: DIODE GEN PURP 600V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURS260T3G murs260t3-d.pdf
MURS260T3G
Виробник: onsemi
Description: DIODE GEN PURP 600V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURS340T3G murs320t3-d.pdf
MURS340T3G
Виробник: onsemi
Description: DIODE GEN PURP 400V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+41.34 грн
10+ 34.18 грн
100+ 23.77 грн
500+ 17.41 грн
1000+ 14.15 грн
Мінімальне замовлення: 7
NCP100SNT1G NCP100-D.pdf
NCP100SNT1G
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1.7% 5TSOP
Packaging: Cut Tape (CT)
Tolerance: ±1.7%
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 0.9V
Current - Cathode: 100 µA
Current - Output: 20 mA
Voltage - Output (Max): 6 V
товар відсутній
NCP303LSN30T1G ncp302-d.pdf
NCP303LSN30T1G
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 3V
Supplier Device Package: 5-TSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
NCP303LSN45T1G ncp302-d.pdf
NCP303LSN45T1G
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.5V
Supplier Device Package: 5-TSOP
DigiKey Programmable: Not Verified
товар відсутній
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