Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NE592D8R2G | onsemi |
Description: IC AMP GENERAL PURPOSE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Applications: General Purpose Voltage - Supply, Single/Dual (±): ±3V ~ 8V Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Supply: 18 mA Current - Output / Channel: 10 mA |
на замовлення 3648 шт: термін постачання 21-31 дні (днів) |
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NIS5112D1R2G | onsemi |
Description: IC ELECTRONIC FUSE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 18V Current - Output: 2A Operating Temperature: -40°C ~ 175°C Supplier Device Package: 8-SOIC Part Status: Not For New Designs |
на замовлення 278 шт: термін постачання 21-31 дні (днів) |
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NJD2873T4G | onsemi |
Description: TRANS NPN 50V 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.68 W |
на замовлення 5815 шт: термін постачання 21-31 дні (днів) |
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NL17SV00XV5T2G | onsemi | Description: IC GATE NAND 1CH 2-INP SOT553 |
на замовлення 3937 шт: термін постачання 21-31 дні (днів) |
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NL17SV08XV5T2G | onsemi |
Description: IC GATE AND 1CH 2-INP SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 900 nA |
на замовлення 3220 шт: термін постачання 21-31 дні (днів) |
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NL17SV16XV5T2G | onsemi |
Description: IC BUF NON-INVERT 3.6V SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: SOT-553 Part Status: Active |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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NL17SZ06DFT2G | onsemi | Description: IC INVERTER OD 1CH 1-INP SC88A |
товар відсутній |
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NL17SZ07XV5T2G | onsemi |
Description: IC BUF NON-INVERT 5.5V SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: SOT-553 Part Status: Obsolete |
товар відсутній |
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NL17SZ08XV5T2G | onsemi |
Description: IC GATE AND 1CH 2-INP SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товар відсутній |
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NL17SZ126DFT2G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-88A (SC-70-5/SOT-353) |
на замовлення 4636 шт: термін постачання 21-31 дні (днів) |
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NL17SZ17XV5T2G | onsemi | Description: IC BUF NON-INVERT 5.5V SOT553 |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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NL27WZ06DFT2G | onsemi | Description: IC INVERTER OD 2CH 2-INP SC88 |
товар відсутній |
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NL27WZ07DTT1G | onsemi | Description: IC BUFFER NON-INVERT 5.5V 6TSOP |
на замовлення 25460 шт: термін постачання 21-31 дні (днів) |
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NL27WZ126USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8 Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Part Status: Obsolete |
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NL37WZ07USG | onsemi | Description: IC BUFFER NON-INVERT 5.5V US8 |
товар відсутній |
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NLAS3158MNR2G | onsemi |
Description: IC SWITCH SPDT X 2 13OHM 12DFN Packaging: Cut Tape (CT) Package / Case: 12-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 13Ohm -3db Bandwidth: 250MHz Supplier Device Package: 12-DFN (3x1) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 2.3pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 26768 шт: термін постачання 21-31 дні (днів) |
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NLAS3799BLMNR2G | onsemi |
Description: IC SWITCH DPDTX2 400MOHM 16WQFN Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 400mOhm -3db Bandwidth: 19MHz Supplier Device Package: 16-WQFN (1.8x2.6) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 51pC Crosstalk: -90dB @ 100kHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 30ns Channel Capacitance (CS(off), CD(off)): 3pF Current - Leakage (IS(off)) (Max): 500nA Number of Circuits: 2 |
товар відсутній |
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NLAS4053DR2G | onsemi |
Description: IC SWITCH SPDT X 3 26OHM 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 180MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 5V Voltage - Supply, Dual (V±): ±3V Charge Injection: 12pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 23ns, 23ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
на замовлення 4838 шт: термін постачання 21-31 дні (днів) |
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NLAS4053DTR2G | onsemi |
Description: IC SWITCH SPDT X 3 26OHM 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 180MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 5V Voltage - Supply, Dual (V±): ±3V Charge Injection: 12pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 23ns, 23ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
на замовлення 4700 шт: термін постачання 21-31 дні (днів) |
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NLAS4157DFT2G | onsemi |
Description: IC SWITCH SPDT SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.15Ohm -3db Bandwidth: 40MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 48pC Crosstalk: -57dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 120mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
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NLAS4501DFT2G | onsemi | Description: IC SWITCH SPST SC88A |
товар відсутній |
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NLAS4599DTT1G | onsemi |
Description: IC SWITCH SPDT X 1 25OHM 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 220MHz Supplier Device Package: 6-TSOP Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 2Ohm Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
на замовлення 16519 шт: термін постачання 21-31 дні (днів) |
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NLAS4684FCT1G | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROBUMP Packaging: Cut Tape (CT) Package / Case: 10-UFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 800mOhm -3db Bandwidth: 9.5MHz Supplier Device Package: 10-Microbump Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 15pC Crosstalk: -83dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
на замовлення 2949 шт: термін постачання 21-31 дні (днів) |
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NLAS4684MR2G | onsemi |
Description: IC SWITCH DUAL SPDT MICRO10 Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 800mOhm -3db Bandwidth: 9.5MHz Supplier Device Package: 10-Micro Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 15pC Crosstalk: -83dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
на замовлення 5735 шт: термін постачання 21-31 дні (днів) |
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NLAS4717EPFCT1G | onsemi | Description: IC SWITCH DUAL SPDT 10MICROBUMP |
на замовлення 2385 шт: термін постачання 21-31 дні (днів) |
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NLAS4783BMN1R2G | onsemi |
Description: IC SWITCH SPDT X 3 1OHM 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1Ohm -3db Bandwidth: 17MHz Supplier Device Package: 16-QFN (3x3) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 50pC Crosstalk: -62dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 400mOhm (Max) Switch Time (Ton, Toff) (Max): 27ns, 20ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 3 |
на замовлення 1277 шт: термін постачання 21-31 дні (днів) |
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NLAS4783MN1R2G | onsemi |
Description: IC SWITCH SPDT X 3 1OHM 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1Ohm -3db Bandwidth: 17MHz Supplier Device Package: 16-QFN (3x3) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 50pC Crosstalk: -62dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 400mOhm (Max) Switch Time (Ton, Toff) (Max): 27ns, 20ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 3 |
на замовлення 379 шт: термін постачання 21-31 дні (днів) |
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NLAS5223BMNR2G | onsemi |
Description: IC SWITCH SPDTX2 350MOHM 10WQFN Packaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 350mOhm -3db Bandwidth: 19MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 38pC Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 50ns Channel Capacitance (CS(off), CD(off)): 60pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 2 |
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NLAS5223LMNR2G | onsemi | Description: IC SWITCH DUAL SPDT 10WQFN |
товар відсутній |
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NLAS5223MNR2G | onsemi |
Description: IC SWITCH DUAL SPDT 10WQFN Packaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 300mOhm -3db Bandwidth: 17MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 3.6V Charge Injection: 38pC Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 30ns Channel Capacitance (CS(off), CD(off)): 75pF Current - Leakage (IS(off)) (Max): 500nA Part Status: Active Number of Circuits: 2 |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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NLAS7222AMTR2G | onsemi |
Description: IC USB SWITCH DPDT 10WQFN Features: USB 2.0 Packaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 9Ohm -3db Bandwidth: 700MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: DPDT Part Status: Active Number of Channels: 1 |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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NLASB3157MTR2G | onsemi |
Description: IC SWITCH SPDT X 1 7OHM 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 7Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-WDFN (1.2x1) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
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NLAST4051DTR2G | onsemi |
Description: IC MUX 8:1 26OHM 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 95MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 5V Voltage - Supply, Dual (V±): ±3V Charge Injection: 12pC Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 23ns, 23ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100pA Part Status: Active Number of Circuits: 1 |
на замовлення 2198 шт: термін постачання 21-31 дні (днів) |
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NLAST4599DTT1G | onsemi |
Description: IC SWITCH SPDT X 1 25OHM 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 200MHz Supplier Device Package: 6-TSOP Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 2Ohm Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 1 |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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NLSF595DTR2G | onsemi |
Description: IC LED DRVR LINEAR 12MA 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Voltage - Output: 5.5V Mounting Type: Surface Mount Number of Outputs: 8 Type: Linear Operating Temperature: -55°C ~ 125°C (TA) Current - Output / Channel: 12mA Internal Switch(s): Yes Supplier Device Package: 16-TSSOP Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 8835 шт: термін постачання 21-31 дні (днів) |
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NLSF595MNR2G | onsemi |
Description: IC LED DRIVER LINEAR 12MA 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Voltage - Output: 5.5V Mounting Type: Surface Mount Number of Outputs: 8 Type: Linear Operating Temperature: -55°C ~ 125°C (TA) Current - Output / Channel: 12mA Internal Switch(s): Yes Supplier Device Package: 16-QFN (3x3) Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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NSBC115EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SOT-563 |
на замовлення 196000 шт: термін постачання 21-31 дні (днів) |
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NSR0320MW2T3G | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 29pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA Current - Reverse Leakage @ Vr: 50 µA @ 15 V |
на замовлення 26705 шт: термін постачання 21-31 дні (днів) |
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NSR30CM3T5G | onsemi |
Description: DIODE ARR SCHOT 30V 200MA SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-723 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 4248 шт: термін постачання 21-31 дні (днів) |
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NSS20300MR6T1G | onsemi |
Description: TRANS PNP 20V 3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 545 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSS30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
на замовлення 272679 шт: термін постачання 21-31 дні (днів) |
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NSS30101LT1G | onsemi |
Description: TRANS NPN 30V 1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
на замовлення 7183 шт: термін постачання 21-31 дні (днів) |
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NST30010MXV6T1G | onsemi |
Description: TRANS 2PNP 30V 0.1A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 |
на замовлення 5056 шт: термін постачання 21-31 дні (днів) |
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NST3904DXV6T1G | onsemi |
Description: TRANS 2NPN 40V 0.2A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 15847 шт: термін постачання 21-31 дні (днів) |
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NST3946DXV6T1G | onsemi |
Description: TRANS NPN/PNP 40V 0.2A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz, 250MHz Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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NST489AMT1G | onsemi |
Description: TRANS NPN 30V 2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 300MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 535 mW |
на замовлення 60099 шт: термін постачання 21-31 дні (днів) |
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NTB23N03RT4G | onsemi | Description: MOSFET N-CH 25V 23A D2PAK |
товар відсутній |
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NTB60N06LT4G | onsemi |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V |
товар відсутній |
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NTB60N06T4G | onsemi |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V |
товар відсутній |
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NTB75N06T4G | onsemi |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V |
товар відсутній |
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NTD14N03RT4G | onsemi |
Description: MOSFET N-CH 25V 2.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V |
на замовлення 10454 шт: термін постачання 21-31 дні (днів) |
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NTD20N06T4G | onsemi |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V |
на замовлення 5541 шт: термін постачання 21-31 дні (днів) |
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NTD24N06T4G | onsemi |
Description: MOSFET N-CH 60V 24A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
товар відсутній |
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NTD3055-150T4G | onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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NTD3055L170T4G | onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V |
товар відсутній |
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NTD40N03RT4G | onsemi |
Description: MOSFET N-CH 25V 7.8A/32A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
товар відсутній |
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NTD4302T4G | onsemi |
Description: MOSFET N-CH 30V 8.4A/68A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V |
товар відсутній |
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NTD4809NHT4G | onsemi |
Description: MOSFET N-CH 30V 9.6A/58A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V |
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NTD70N03RT4G | onsemi |
Description: MOSFET N-CH 25V 10A/32A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V |
товар відсутній |
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NTD78N03T4G | onsemi | Description: MOSFET N-CH 25V 11.4A/78A DPAK |
товар відсутній |
NE592D8R2G |
Виробник: onsemi
Description: IC AMP GENERAL PURPOSE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Applications: General Purpose
Voltage - Supply, Single/Dual (±): ±3V ~ 8V
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Supply: 18 mA
Current - Output / Channel: 10 mA
Description: IC AMP GENERAL PURPOSE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Applications: General Purpose
Voltage - Supply, Single/Dual (±): ±3V ~ 8V
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Supply: 18 mA
Current - Output / Channel: 10 mA
на замовлення 3648 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 81.75 грн |
10+ | 70.58 грн |
25+ | 66.95 грн |
100+ | 48.24 грн |
250+ | 42.64 грн |
500+ | 40.39 грн |
1000+ | 30.9 грн |
NIS5112D1R2G |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
на замовлення 278 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.56 грн |
10+ | 183.88 грн |
25+ | 173.85 грн |
100+ | 141.42 грн |
250+ | 134.17 грн |
NJD2873T4G |
Виробник: onsemi
Description: TRANS NPN 50V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
Description: TRANS NPN 50V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
на замовлення 5815 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.97 грн |
10+ | 30.46 грн |
100+ | 21.19 грн |
500+ | 15.53 грн |
1000+ | 12.62 грн |
NL17SV00XV5T2G |
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SOT553
Description: IC GATE NAND 1CH 2-INP SOT553
на замовлення 3937 шт:
термін постачання 21-31 дні (днів)NL17SV08XV5T2G |
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
на замовлення 3220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.7 грн |
11+ | 27.25 грн |
25+ | 25.41 грн |
100+ | 19.07 грн |
250+ | 17.71 грн |
500+ | 14.98 грн |
1000+ | 11.39 грн |
NL17SV16XV5T2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: SOT-553
Part Status: Active
Description: IC BUF NON-INVERT 3.6V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: SOT-553
Part Status: Active
на замовлення 425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.59 грн |
15+ | 18.42 грн |
25+ | 16.13 грн |
100+ | 8.64 грн |
250+ | 8.1 грн |
NL17SZ07XV5T2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SOT-553
Part Status: Obsolete
Description: IC BUF NON-INVERT 5.5V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SOT-553
Part Status: Obsolete
товар відсутній
NL17SZ08XV5T2G |
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ126DFT2G |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Description: IC BUFFER NON-INVERT 5.5V SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 4636 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.33 грн |
17+ | 16.64 грн |
25+ | 13.91 грн |
100+ | 7.25 грн |
250+ | 6.38 грн |
500+ | 5.44 грн |
1000+ | 3.64 грн |
NL17SZ17XV5T2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V SOT553
Description: IC BUF NON-INVERT 5.5V SOT553
на замовлення 89 шт:
термін постачання 21-31 дні (днів)NL27WZ07DTT1G |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6TSOP
Description: IC BUFFER NON-INVERT 5.5V 6TSOP
на замовлення 25460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
13+ | 21.56 грн |
25+ | 19.74 грн |
100+ | 13.78 грн |
250+ | 12.49 грн |
500+ | 10.33 грн |
1000+ | 7.62 грн |
NL27WZ126USG |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
товар відсутній
NLAS3158MNR2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 2 13OHM 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 12-DFN (3x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 13OHM 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 12-DFN (3x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 26768 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.29 грн |
10+ | 49.7 грн |
25+ | 46.69 грн |
100+ | 33.21 грн |
250+ | 28.27 грн |
500+ | 26.85 грн |
1000+ | 20.16 грн |
NLAS3799BLMNR2G |
Виробник: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
товар відсутній
NLAS4053DR2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.74 грн |
10+ | 46.35 грн |
25+ | 43.54 грн |
100+ | 30.98 грн |
250+ | 26.37 грн |
500+ | 25.05 грн |
1000+ | 18.8 грн |
NLAS4053DTR2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.16 грн |
10+ | 48.19 грн |
25+ | 45.76 грн |
100+ | 32.97 грн |
250+ | 29.14 грн |
500+ | 27.61 грн |
1000+ | 21.12 грн |
NLAS4157DFT2G |
Виробник: onsemi
Description: IC SWITCH SPDT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.15Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 48pC
Crosstalk: -57dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.15Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 48pC
Crosstalk: -57dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
товар відсутній
NLAS4599DTT1G |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 16519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.44 грн |
12+ | 23.28 грн |
25+ | 21.69 грн |
100+ | 15.13 грн |
250+ | 12.8 грн |
500+ | 12.22 грн |
1000+ | 8.87 грн |
NLAS4684FCT1G |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROBUMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Microbump
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DUAL SPDT 10MICROBUMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Microbump
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 2949 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.8 грн |
10+ | 61.89 грн |
25+ | 58.76 грн |
100+ | 45.29 грн |
250+ | 42.33 грн |
500+ | 37.41 грн |
1000+ | 29.05 грн |
NLAS4684MR2G |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT MICRO10
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Micro
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DUAL SPDT MICRO10
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 9.5MHz
Supplier Device Package: 10-Micro
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 15pC
Crosstalk: -83dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 5735 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.78 грн |
10+ | 65.99 грн |
25+ | 62.65 грн |
100+ | 48.29 грн |
250+ | 45.14 грн |
500+ | 39.89 грн |
1000+ | 30.97 грн |
NLAS4717EPFCT1G |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROBUMP
Description: IC SWITCH DUAL SPDT 10MICROBUMP
на замовлення 2385 шт:
термін постачання 21-31 дні (днів)NLAS4783BMN1R2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
на замовлення 1277 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.95 грн |
10+ | 87.08 грн |
25+ | 82.64 грн |
100+ | 59.55 грн |
250+ | 52.62 грн |
500+ | 49.85 грн |
1000+ | 38.14 грн |
NLAS4783MN1R2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 50pC
Crosstalk: -62dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 3
на замовлення 379 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.95 грн |
10+ | 87.08 грн |
25+ | 82.64 грн |
100+ | 59.55 грн |
250+ | 52.62 грн |
NLAS5223BMNR2G |
Виробник: onsemi
Description: IC SWITCH SPDTX2 350MOHM 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 350mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 50ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPDTX2 350MOHM 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 350mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 50ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
товар відсутній
NLAS5223MNR2G |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 300mOhm
-3db Bandwidth: 17MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 75pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH DUAL SPDT 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 300mOhm
-3db Bandwidth: 17MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 75pF
Current - Leakage (IS(off)) (Max): 500nA
Part Status: Active
Number of Circuits: 2
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
10+ | 72.98 грн |
25+ | 69.31 грн |
100+ | 53.43 грн |
250+ | 49.94 грн |
500+ | 44.14 грн |
1000+ | 34.27 грн |
NLAS7222AMTR2G |
Виробник: onsemi
Description: IC USB SWITCH DPDT 10WQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
Description: IC USB SWITCH DPDT 10WQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.8 грн |
10+ | 61.61 грн |
25+ | 58.49 грн |
100+ | 42.15 грн |
250+ | 37.25 грн |
500+ | 35.29 грн |
1000+ | 27 грн |
NLASB3157MTR2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-WDFN (1.2x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-WDFN (1.2x1)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
товар відсутній
NLAST4051DTR2G |
Виробник: onsemi
Description: IC MUX 8:1 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 95MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 95MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 5V
Voltage - Supply, Dual (V±): ±3V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 23ns, 23ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
на замовлення 2198 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.56 грн |
10+ | 54.22 грн |
25+ | 51.48 грн |
100+ | 37.1 грн |
250+ | 32.79 грн |
500+ | 31.06 грн |
1000+ | 23.76 грн |
NLAST4599DTT1G |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.7 грн |
11+ | 25.6 грн |
25+ | 23.44 грн |
100+ | 14.83 грн |
250+ | 12.27 грн |
NLSF595DTR2G |
Виробник: onsemi
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 8835 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.36 грн |
10+ | 64.69 грн |
25+ | 61.42 грн |
100+ | 44.26 грн |
250+ | 39.11 грн |
500+ | 37.06 грн |
1000+ | 28.35 грн |
NLSF595MNR2G |
Виробник: onsemi
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 95.26 грн |
NSBC115EDXV6T1G |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-563
на замовлення 196000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.01 грн |
15+ | 18.42 грн |
100+ | 9.29 грн |
500+ | 7.11 грн |
1000+ | 5.28 грн |
2000+ | 4.44 грн |
NSR0320MW2T3G |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
на замовлення 26705 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 17.77 грн |
24+ | 11.64 грн |
100+ | 5.68 грн |
500+ | 4.44 грн |
1000+ | 3.09 грн |
2000+ | 2.68 грн |
5000+ | 2.44 грн |
NSR30CM3T5G |
Виробник: onsemi
Description: DIODE ARR SCHOT 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 4248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.44 грн |
15+ | 19.24 грн |
100+ | 9.7 грн |
500+ | 7.43 грн |
1000+ | 5.51 грн |
2000+ | 4.64 грн |
NSS20300MR6T1G |
Виробник: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.26 грн |
10+ | 30.19 грн |
100+ | 22.52 грн |
500+ | 16.61 грн |
1000+ | 12.83 грн |
NSS30100LT1G |
Виробник: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
на замовлення 272679 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
14+ | 20.54 грн |
100+ | 12.33 грн |
500+ | 10.71 грн |
1000+ | 7.28 грн |
NSS30101LT1G |
Виробник: onsemi
Description: TRANS NPN 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS NPN 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
на замовлення 7183 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
14+ | 20.54 грн |
100+ | 12.33 грн |
500+ | 10.71 грн |
1000+ | 7.28 грн |
NST30010MXV6T1G |
Виробник: onsemi
Description: TRANS 2PNP 30V 0.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Description: TRANS 2PNP 30V 0.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
на замовлення 5056 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.05 грн |
10+ | 41.07 грн |
100+ | 28.44 грн |
500+ | 22.3 грн |
1000+ | 18.98 грн |
2000+ | 16.91 грн |
NST3904DXV6T1G |
Виробник: onsemi
Description: TRANS 2NPN 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS 2NPN 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 15847 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
15+ | 18.89 грн |
100+ | 9.53 грн |
500+ | 7.93 грн |
1000+ | 6.17 грн |
2000+ | 5.52 грн |
NST3946DXV6T1G |
Виробник: onsemi
Description: TRANS NPN/PNP 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS NPN/PNP 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.57 грн |
14+ | 20.67 грн |
100+ | 10.42 грн |
500+ | 8.67 грн |
1000+ | 6.75 грн |
2000+ | 6.04 грн |
NST489AMT1G |
Виробник: onsemi
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 60099 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 41.23 грн |
10+ | 33.89 грн |
100+ | 23.56 грн |
500+ | 17.27 грн |
1000+ | 14.03 грн |
NTB60N06LT4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
товар відсутній
NTB60N06T4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
товар відсутній
NTB75N06T4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
товар відсутній
NTD14N03RT4G |
Виробник: onsemi
Description: MOSFET N-CH 25V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Description: MOSFET N-CH 25V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
на замовлення 10454 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.84 грн |
10+ | 74.14 грн |
100+ | 57.65 грн |
500+ | 45.86 грн |
1000+ | 37.36 грн |
NTD20N06T4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
на замовлення 5541 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 96.68 грн |
10+ | 77.43 грн |
100+ | 61.62 грн |
500+ | 48.93 грн |
1000+ | 41.51 грн |
NTD24N06T4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товар відсутній
NTD3055-150T4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)NTD3055L170T4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
товар відсутній
NTD40N03RT4G |
Виробник: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
товар відсутній
NTD4302T4G |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
товар відсутній
NTD4809NHT4G |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
товар відсутній
NTD70N03RT4G |
Виробник: onsemi
Description: MOSFET N-CH 25V 10A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
Description: MOSFET N-CH 25V 10A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
товар відсутній