Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NB6L295MNGEVB | onsemi |
Description: BOARD EVAL NB6L295MN CLK DELAY Packaging: Box Function: Clock Distribution Type: Timing Utilized IC / Part: NB6L295 Supplied Contents: Board(s) Embedded: No |
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NCN8025AMNGEVB | onsemi |
Description: BOARD EVAL SMART CARD INTERFACE Packaging: Box Function: Smart Card Type: Interface Utilized IC / Part: NCN8025A Supplied Contents: Board(s) Embedded: No |
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NCP1216AFORWEVB | onsemi |
Description: BOARD EVAL NCP1216A DC/DC CONV Packaging: Box Voltage - Output: 12V Voltage - Input: 36V ~ 72V Current - Output: 3A Frequency - Switching: 100kHz Regulator Topology: Forward Converter Board Type: Fully Populated Utilized IC / Part: NCP1216A Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated Part Status: Obsolete |
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NCP1337ADAPEVB | onsemi |
Description: BOARD EVAL OFFLINE CTLR NCP1337A Packaging: Box Voltage - Output: 12V Voltage - Input: 90 ~ 265 VAC Current - Output: 5A Frequency - Switching: 130kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1337 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 60 W |
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NCP1380DGEVB | onsemi |
Description: EVAL BOARD FOR NCP1380 Packaging: Box Voltage - Output: 19V Voltage - Input: 85 ~ 265 VAC Current - Output: 4A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1380 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated |
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NCP1650EVB | onsemi | Description: BOARD EVAL NCP1650 PFC CTLR |
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NCP3063SMDINVEVB | onsemi |
Description: BOARD EVAL NCP3063 BUCK BOOST Packaging: Box Voltage - Output: -12V Voltage - Input: 5V Current - Output: 100mA Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: NCP3063 Supplied Contents: Board(s) Main Purpose: DC/DC, Negative Inverter Outputs and Type: 1, Non-Isolated Part Status: Obsolete |
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NCP3163BUCKGEVB | onsemi | Description: BOARD EVAL NCP3163 DC-DC CONV |
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NCP3170BGEVB | onsemi |
Description: BOARD EVAL NCP3170 SYNC PWM REG Packaging: Box Voltage - Output: 3.3V Voltage - Input: 5V ~ 18V Current - Output: 3A Frequency - Switching: 1MHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: NCP3170B Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
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NCP380HMU05AGEVB | onsemi |
Description: BOARD EVAL NCP380HMU05 LOAD SW Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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NCP380HMU10AGEVB | onsemi | Description: BOARD EVAL NCP380HMU10 LOAD SW |
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NCP380HMU15AGEVB | onsemi | Description: BOARD EVAL NCP380HMU15 LOAD SW |
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NCP380HMU20AGEVB | onsemi | Description: BOARD EVAL NCP380HMU20 LOAD SW |
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NCP380HMUAJAGEVB | onsemi | Description: BOARD EVAL NCP380HMUAJ LOAD SW |
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NCP380HSN05AGEVB | onsemi | Description: BOARD EVAL NCP380HSN05 LOAD SW |
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NCP380HSN10AGEVB | onsemi | Description: BOARD EVAL NCP380HSN10 LOAD SW |
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NCP380HSNAJAGEVB | onsemi |
Description: BOARD EVAL NCP380HSNAJ LOAD SW Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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NCP380LMU15AGEVB | onsemi | Description: BOARD EVAL NCP380LMU15 LOAD SW |
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NCP380LMUAJAGEVB | onsemi |
Description: BOARD EVAL NCP380LMUAJ LOAD SW Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No |
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NCP380LSN05AGEVB | onsemi | Description: BOARD EVAL NCP380LSN05 LOAD SW |
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NCP380LSN10AGEVB | onsemi | Description: BOARD EVAL NCP380LSN10 LOAD SW |
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NCP380LSNAJAGEVB | onsemi |
Description: BOARD EVAL NCP380LSNAJ LOAD SW Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FOD3120SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 5580587 шт: термін постачання 21-31 дні (днів) |
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FOD3120SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: IEC, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 1218 шт: термін постачання 21-31 дні (днів) |
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FODM121AR2 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 37882 шт: термін постачання 21-31 дні (днів) |
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FODM124R2V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 14790 шт: термін постачання 21-31 дні (днів) |
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HMHA281R2 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SOIC Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 376200 шт: термін постачання 21-31 дні (днів) |
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MOC205R2VM | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 80% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1887 шт: термін постачання 21-31 дні (днів) |
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MOC213R2M | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 696826 шт: термін постачання 21-31 дні (днів) |
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MOCD208R2M | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 125% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
на замовлення 11160 шт: термін постачання 21-31 дні (днів) |
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FDD390N15A | onsemi |
Description: MOSFET N-CH 150V 26A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V |
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FDD86252 | onsemi |
Description: MOSFET N-CH 150V 5A/27A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
на замовлення 80149 шт: термін постачання 21-31 дні (днів) |
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FDMC86520L | onsemi |
Description: MOSFET N-CH 60V 13.5A/22A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V |
на замовлення 6163 шт: термін постачання 21-31 дні (днів) |
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FDMQ8403 | onsemi |
Description: MOSFET 4N-CH 100V 3.1A 12MLP Packaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
на замовлення 15891 шт: термін постачання 21-31 дні (днів) |
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FDMS039N08B | onsemi |
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V |
на замовлення 55465 шт: термін постачання 21-31 дні (днів) |
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FDMS7650DC | onsemi |
Description: MOSFET N-CH 30V 47A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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FDMS86300 | onsemi |
Description: MOSFET N-CH 80V 19A/80A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
на замовлення 3179 шт: термін постачання 21-31 дні (днів) |
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FDT86256 | onsemi |
Description: MOSFET N-CH 150V 1.2A/3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V |
на замовлення 1757 шт: термін постачання 21-31 дні (днів) |
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FAN5345S20X | onsemi |
Description: IC LED DRVR RGLTR SGL WR 6SSOT Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Voltage - Output: 6.2V ~ 18.5V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: SuperSOT™-6 Dimming: Single-Wire Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
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FAN5345S30X | onsemi |
Description: IC LED DRVR RGLTR SGL WR 6SSOT Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Voltage - Output: 6.2V ~ 28.5V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: SuperSOT™-6 Dimming: Single-Wire Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
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FAN5346S20X | onsemi | Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
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FAN5346S30X | onsemi | Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
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FDC8602 | onsemi |
Description: MOSFET 2N-CH 100V 1.2A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 690mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
на замовлення 21918 шт: термін постачання 21-31 дні (днів) |
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FQNL2N50BTA | onsemi |
Description: MOSFET N-CH 500V 350MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
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KSA928AYTA | onsemi |
Description: TRANS PNP 30V 2A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
на замовлення 6154 шт: термін постачання 21-31 дні (днів) |
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SSN1N45BTA | onsemi | Description: MOSFET N-CH 450V 500MA TO92-3 |
на замовлення 1398 шт: термін постачання 21-31 дні (днів) |
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74ACT08MTCX | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
товар відсутній |
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74ACT240MTCX | onsemi |
Description: IC BUFF INVERT 5.5V 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 3937 шт: термін постачання 21-31 дні (днів) |
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74LCX573MTCX | onsemi | Description: IC LATCH OCT LV 5V I/O 20TSSOP |
товар відсутній |
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74VHC541MTCX | onsemi |
Description: IC BUF NON-INVERT 5.5V 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 20554 шт: термін постачання 21-31 дні (днів) |
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FAN6300AMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Open Loop, Over Voltage Voltage - Start Up: 16 V Part Status: Last Time Buy |
на замовлення 6726 шт: термін постачання 21-31 дні (днів) |
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FDD8880 | onsemi |
Description: MOSFET N-CH 30V 13A/58A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V |
товар відсутній |
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FDD8896 | onsemi |
Description: MOSFET N-CH 30V 17A/94A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
на замовлення 20273 шт: термін постачання 21-31 дні (днів) |
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FDMC3020DC | onsemi |
Description: MOSFET N-CH 30V 17A/40A DLCOOL33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Dual Cool ™ 33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
товар відсутній |
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FDMS7698 | onsemi |
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V |
на замовлення 2740 шт: термін постачання 21-31 дні (днів) |
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FDS2582 | onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V |
на замовлення 530 шт: термін постачання 21-31 дні (днів) |
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FDT86106LZ | onsemi |
Description: MOSFET N-CH 100V 3.2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
на замовлення 14121 шт: термін постачання 21-31 дні (днів) |
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FQB1P50TM | onsemi | Description: MOSFET P-CH 500V 1.5A D2PAK |
на замовлення 780 шт: термін постачання 21-31 дні (днів) |
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FQB44N10TM | onsemi |
Description: MOSFET N-CH 100V 43.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 746 шт: термін постачання 21-31 дні (днів) |
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FQB7P20TM-F085 | onsemi | Description: MOSFET P-CH 200V 7.3A D2PAK |
товар відсутній |
NB6L295MNGEVB |
Виробник: onsemi
Description: BOARD EVAL NB6L295MN CLK DELAY
Packaging: Box
Function: Clock Distribution
Type: Timing
Utilized IC / Part: NB6L295
Supplied Contents: Board(s)
Embedded: No
Description: BOARD EVAL NB6L295MN CLK DELAY
Packaging: Box
Function: Clock Distribution
Type: Timing
Utilized IC / Part: NB6L295
Supplied Contents: Board(s)
Embedded: No
товар відсутній
NCN8025AMNGEVB |
Виробник: onsemi
Description: BOARD EVAL SMART CARD INTERFACE
Packaging: Box
Function: Smart Card
Type: Interface
Utilized IC / Part: NCN8025A
Supplied Contents: Board(s)
Embedded: No
Description: BOARD EVAL SMART CARD INTERFACE
Packaging: Box
Function: Smart Card
Type: Interface
Utilized IC / Part: NCN8025A
Supplied Contents: Board(s)
Embedded: No
товар відсутній
NCP1216AFORWEVB |
Виробник: onsemi
Description: BOARD EVAL NCP1216A DC/DC CONV
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 72V
Current - Output: 3A
Frequency - Switching: 100kHz
Regulator Topology: Forward Converter
Board Type: Fully Populated
Utilized IC / Part: NCP1216A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Part Status: Obsolete
Description: BOARD EVAL NCP1216A DC/DC CONV
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 72V
Current - Output: 3A
Frequency - Switching: 100kHz
Regulator Topology: Forward Converter
Board Type: Fully Populated
Utilized IC / Part: NCP1216A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Part Status: Obsolete
товар відсутній
NCP1337ADAPEVB |
Виробник: onsemi
Description: BOARD EVAL OFFLINE CTLR NCP1337A
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 5A
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1337
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 60 W
Description: BOARD EVAL OFFLINE CTLR NCP1337A
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 5A
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1337
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 60 W
товар відсутній
NCP1380DGEVB |
Виробник: onsemi
Description: EVAL BOARD FOR NCP1380
Packaging: Box
Voltage - Output: 19V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 4A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1380
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR NCP1380
Packaging: Box
Voltage - Output: 19V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 4A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1380
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
товар відсутній
NCP3063SMDINVEVB |
Виробник: onsemi
Description: BOARD EVAL NCP3063 BUCK BOOST
Packaging: Box
Voltage - Output: -12V
Voltage - Input: 5V
Current - Output: 100mA
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: NCP3063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Description: BOARD EVAL NCP3063 BUCK BOOST
Packaging: Box
Voltage - Output: -12V
Voltage - Input: 5V
Current - Output: 100mA
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: NCP3063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
товар відсутній
NCP3170BGEVB |
Виробник: onsemi
Description: BOARD EVAL NCP3170 SYNC PWM REG
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 5V ~ 18V
Current - Output: 3A
Frequency - Switching: 1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP3170B
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL NCP3170 SYNC PWM REG
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 5V ~ 18V
Current - Output: 3A
Frequency - Switching: 1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP3170B
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
товар відсутній
NCP380HMU05AGEVB |
Виробник: onsemi
Description: BOARD EVAL NCP380HMU05 LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BOARD EVAL NCP380HMU05 LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3005.73 грн |
NCP380HSNAJAGEVB |
Виробник: onsemi
Description: BOARD EVAL NCP380HSNAJ LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BOARD EVAL NCP380HSNAJ LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3137.7 грн |
NCP380LMUAJAGEVB |
Виробник: onsemi
Description: BOARD EVAL NCP380LMUAJ LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Description: BOARD EVAL NCP380LMUAJ LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
товар відсутній
NCP380LSNAJAGEVB |
Виробник: onsemi
Description: BOARD EVAL NCP380LSNAJ LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BOARD EVAL NCP380LSNAJ LOAD SW
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3005.73 грн |
FOD3120SD |
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 5580587 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 168.54 грн |
10+ | 108.5 грн |
100+ | 83.5 грн |
500+ | 70.83 грн |
FOD3120SDV |
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1218 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 136.98 грн |
10+ | 87.92 грн |
100+ | 67.69 грн |
500+ | 57.42 грн |
FODM121AR2 |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 37882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.47 грн |
10+ | 27.97 грн |
100+ | 18.52 грн |
1000+ | 13.43 грн |
FODM124R2V |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 14790 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 43.03 грн |
11+ | 27.35 грн |
100+ | 18.09 грн |
1000+ | 13.1 грн |
HMHA281R2 |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SOIC
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SOIC
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 376200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 48.05 грн |
10+ | 30.11 грн |
100+ | 19.72 грн |
1000+ | 14.61 грн |
MOC205R2VM |
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 80% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 80% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1887 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.62 грн |
10+ | 28.94 грн |
100+ | 18.96 грн |
1000+ | 14.05 грн |
MOC213R2M |
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 696826 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.18 грн |
10+ | 28.59 грн |
100+ | 18.9 грн |
1000+ | 13.7 грн |
MOCD208R2M |
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 11160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.15 грн |
10+ | 46.27 грн |
100+ | 30.31 грн |
1000+ | 22.46 грн |
FDD390N15A |
Виробник: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
товар відсутній
FDD86252 |
Виробник: onsemi
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
на замовлення 80149 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.25 грн |
10+ | 77.35 грн |
100+ | 60.15 грн |
500+ | 47.84 грн |
1000+ | 38.97 грн |
FDMC86520L |
Виробник: onsemi
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
на замовлення 6163 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 152.04 грн |
10+ | 121.96 грн |
100+ | 97.06 грн |
500+ | 77.08 грн |
1000+ | 65.4 грн |
FDMQ8403 |
Виробник: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
на замовлення 15891 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 218.02 грн |
10+ | 176.25 грн |
100+ | 142.6 грн |
500+ | 118.96 грн |
1000+ | 101.86 грн |
FDMS039N08B |
Виробник: onsemi
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
на замовлення 55465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 155.63 грн |
10+ | 124.31 грн |
100+ | 98.91 грн |
500+ | 78.54 грн |
1000+ | 66.64 грн |
FDMS7650DC |
Виробник: onsemi
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 359.31 грн |
10+ | 290.89 грн |
100+ | 235.3 грн |
500+ | 196.28 грн |
1000+ | 168.07 грн |
FDMS86300 |
Виробник: onsemi
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
на замовлення 3179 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 157.78 грн |
10+ | 126.18 грн |
100+ | 100.47 грн |
500+ | 79.78 грн |
1000+ | 67.69 грн |
FDT86256 |
Виробник: onsemi
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
на замовлення 1757 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 89.65 грн |
10+ | 70.37 грн |
100+ | 54.73 грн |
500+ | 43.53 грн |
1000+ | 35.46 грн |
FAN5345S20X |
Виробник: onsemi
Description: IC LED DRVR RGLTR SGL WR 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Voltage - Output: 6.2V ~ 18.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRVR RGLTR SGL WR 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Voltage - Output: 6.2V ~ 18.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
FAN5345S30X |
Виробник: onsemi
Description: IC LED DRVR RGLTR SGL WR 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Voltage - Output: 6.2V ~ 28.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRVR RGLTR SGL WR 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Voltage - Output: 6.2V ~ 28.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
FDC8602 |
Виробник: onsemi
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 21918 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 99.69 грн |
10+ | 78.25 грн |
100+ | 60.86 грн |
500+ | 48.42 грн |
1000+ | 39.44 грн |
FQNL2N50BTA |
Виробник: onsemi
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товар відсутній
KSA928AYTA |
Виробник: onsemi
Description: TRANS PNP 30V 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 6154 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.69 грн |
12+ | 23.27 грн |
100+ | 16.16 грн |
500+ | 11.84 грн |
1000+ | 9.62 грн |
SSN1N45BTA |
Виробник: onsemi
Description: MOSFET N-CH 450V 500MA TO92-3
Description: MOSFET N-CH 450V 500MA TO92-3
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.26 грн |
10+ | 55.46 грн |
100+ | 42.54 грн |
500+ | 31.55 грн |
1000+ | 25.24 грн |
74ACT08MTCX |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
товар відсутній
74ACT240MTCX |
Виробник: onsemi
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 3937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.09 грн |
10+ | 50.35 грн |
25+ | 47.82 грн |
100+ | 34.46 грн |
250+ | 30.46 грн |
500+ | 28.85 грн |
1000+ | 22.07 грн |
74VHC541MTCX |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 20554 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.24 грн |
10+ | 50.83 грн |
25+ | 47.76 грн |
100+ | 33.96 грн |
250+ | 28.91 грн |
500+ | 27.46 грн |
1000+ | 20.61 грн |
FAN6300AMY |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
на замовлення 6726 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 71 грн |
10+ | 61.19 грн |
25+ | 58.12 грн |
100+ | 41.88 грн |
250+ | 37.01 грн |
500+ | 35.06 грн |
1000+ | 26.82 грн |
FDD8880 |
Виробник: onsemi
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
товар відсутній
FDD8896 |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
на замовлення 20273 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.98 грн |
10+ | 52.21 грн |
100+ | 40.63 грн |
500+ | 32.32 грн |
1000+ | 26.33 грн |
FDMC3020DC |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
товар відсутній
FDMS7698 |
Виробник: onsemi
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 48.77 грн |
10+ | 40.88 грн |
100+ | 28.29 грн |
500+ | 22.18 грн |
1000+ | 18.88 грн |
FDS2582 |
Виробник: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.91 грн |
10+ | 66.51 грн |
100+ | 51.74 грн |
500+ | 41.15 грн |
FDT86106LZ |
Виробник: onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
на замовлення 14121 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.37 грн |
10+ | 71 грн |
100+ | 55.19 грн |
500+ | 43.9 грн |
1000+ | 35.76 грн |
2000+ | 33.66 грн |
FQB1P50TM |
Виробник: onsemi
Description: MOSFET P-CH 500V 1.5A D2PAK
Description: MOSFET P-CH 500V 1.5A D2PAK
на замовлення 780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.86 грн |
10+ | 91.72 грн |
100+ | 71.51 грн |
FQB44N10TM |
Виробник: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.91 грн |
10+ | 124.17 грн |
100+ | 98.85 грн |