Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
KSC1845FTA | onsemi |
Description: TRANS NPN 120V 0.05A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 3831 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
KSC2316YTA | onsemi |
Description: TRANS NPN 120V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 900 mW |
товар відсутній |
||||||||||||||||
KSC2383OTA | onsemi |
Description: TRANS NPN 160V 1A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
на замовлення 7675 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
KSC2383YTA | onsemi |
Description: TRANS NPN 160V 1A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
на замовлення 197 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SS8550DTA | onsemi |
Description: TRANS PNP 25V 1.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1 W |
на замовлення 19606 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FNC42060F | onsemi |
Description: MODULE SPM 600V 20A 26PWRDIP Packaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Not For New Designs Current: 20 A Voltage: 600 V |
на замовлення 63 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
HUF76633S3ST-F085 | onsemi |
Description: MOSFET N-CH 100V 39A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Power Dissipation (Max): 183W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
||||||||||||||||
FAN48632UC33X | onsemi |
Description: IC REG CONV GSM PA 1OUT 16WLCSP Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLCSP Voltage - Output: 3.3V, 3.49V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 2.35V ~ 5.5V Operating Temperature: -40°C ~ 85°C Applications: Converter, GSM PA Supplier Device Package: 16-WLCSP (1.78x1.78) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
HUF76419S3ST-F085 | onsemi |
Description: MOSFET N-CH 60V 29A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
||||||||||||||||
FNC42060F2 | onsemi | Description: MODULE SPM 600V 20A SPMAA |
товар відсутній |
||||||||||||||||
FCH104N60F | onsemi |
Description: MOSFET N-CH 600V 37A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 100 V |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FSB50760SFT | onsemi | Description: MOD SPM 600V 1A SPM5N-023 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
FAN23SV06MPX | onsemi | Description: IC REG BUCK ADJUSTABLE 6A 34PQFN |
товар відсутній |
||||||||||||||||
FAN23SV06PMPX | onsemi | Description: IC REG BUCK ADJUSTABLE 6A 34PQFN |
товар відсутній |
||||||||||||||||
FAN23SV15MMPX | onsemi | Description: IC REG BUCK ADJ 15A 34PQFN |
товар відсутній |
||||||||||||||||
FDMC8360L | onsemi |
Description: MOSFET N-CH 40V 27A/80A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FDMC86570L | onsemi |
Description: MOSFET N-CH 60V 18A/56A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FDMS86350 | onsemi |
Description: MOSFET N-CH 80V 25A/130A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FAN23SV06MPX | onsemi | Description: IC REG BUCK ADJUSTABLE 6A 34PQFN |
товар відсутній |
||||||||||||||||
FAN23SV06PMPX | onsemi | Description: IC REG BUCK ADJUSTABLE 6A 34PQFN |
товар відсутній |
||||||||||||||||
FAN23SV15MMPX | onsemi | Description: IC REG BUCK ADJ 15A 34PQFN |
товар відсутній |
||||||||||||||||
FDMC86340 | onsemi |
Description: MOSFET N-CH 80V 14A/48A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3885 pF @ 40 V |
на замовлення 6180 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FDMC86570L | onsemi |
Description: MOSFET N-CH 60V 18A/56A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V |
на замовлення 5615 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FDMC8360L | onsemi |
Description: MOSFET N-CH 40V 27A/80A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V |
на замовлення 8889 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FCPF190N60-F152 | onsemi | Description: MOSFET N-CH 600V 20.2A TO220F |
товар відсутній |
||||||||||||||||
LV5680PGEVB | onsemi |
Description: BOARD EVAL FOR LV5680P Packaging: Bulk Voltage - Input: 7.5V ~ 16V Current - Output: 1.3A, 300mA, 300mA, 200mA Regulator Type: Positive Fixed and Adjustable Board Type: Fully Populated Utilized IC / Part: LV5680P Supplied Contents: Board(s) Channels per IC: 4 - Quad Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
LV5980MCGEVB | onsemi |
Description: -BOARD EVAL FOR LV5980MC Packaging: Bulk Voltage - Output: 5V Voltage - Input: 4.5V ~ 23V Current - Output: 3A Frequency - Switching: 370kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: LV5980MC Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
LV8829LFQAGEVK | onsemi |
Description: EVAL BOARD FOR LV8829LFQA Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: LV8829LFQA Supplied Contents: Board(s), Cable(s), Power Supply Primary Attributes: Motors (BLDC) |
товар відсутній |
||||||||||||||||
MC34063LBBGEVB | onsemi |
Description: BOARD EVAL FOR MC34063AP1 Packaging: Bulk Voltage - Output: -12V Voltage - Input: 3V ~ 40V Current - Output: 1.5A Frequency - Switching: 100kHz Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: MC34063A Supplied Contents: Board(s) Main Purpose: DC/DC, Negative Inverter Outputs and Type: 1, Non-Isolated Part Status: Active |
товар відсутній |
||||||||||||||||
NCN51206GEVB | onsemi |
Description: BOARD EVAL FOR NCN5120 Packaging: Bulk Function: KNX Type: Interface Utilized IC / Part: NCN5120 Supplied Contents: Board(s) Embedded: Yes, MCU, 16-Bit Part Status: Obsolete |
товар відсутній |
||||||||||||||||
NCN8024RDWGEVB | onsemi |
Description: BOARD EVAL FOR NCN8024RDW Packaging: Bulk Function: Smart Card Type: Interface Utilized IC / Part: NCN8024R Supplied Contents: Board(s) Embedded: No |
товар відсутній |
||||||||||||||||
NCP1072DIPGEVB | onsemi | Description: BOARD EVAL FOR NCP1072 |
товар відсутній |
||||||||||||||||
NCP1562-100WGEVB | onsemi |
Description: BOARD EVAL FOR NCP1562-100W Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 33V ~ 76V Current - Output: 30A Frequency - Switching: 350kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: NCP1562 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 100 W |
товар відсутній |
||||||||||||||||
NCP1937BADAPGEVB | onsemi | Description: BOARD EVAL FOR NCP1937 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
NCP3064DFBSTGEVB | onsemi |
Description: BOARD EVAL FOR NCP3064 Packaging: Bulk Voltage - Output: 24V Voltage - Input: 3V ~ 40V Current - Output: 1.5A Frequency - Switching: 150kHz Regulator Topology: Buck-Boost Board Type: Fully Populated Utilized IC / Part: NCP3064 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up or Down Outputs and Type: 1, Non-Isolated |
товар відсутній |
||||||||||||||||
LV8702VGEVB | onsemi | Description: BOARD EVAL FOR LV8702V |
товар відсутній |
||||||||||||||||
NCV8851-1GEVB | onsemi |
Description: BOARD EVAL FOR NCV8851-1 Packaging: Bulk Voltage - Output: 5V, 6V Voltage - Input: 4.5V ~ 40V Current - Output: 4A, 70mA Frequency - Switching: 170kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: NCV8851-1 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down with LDO Outputs and Type: 2, Non-Isolated Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
NCV8873LEDBSTGEVB | onsemi | Description: BOARD EVAL FOR NCV8873LEDBST |
товар відсутній |
||||||||||||||||
NCV898031SEPGEVB | onsemi | Description: BOARD EVAL FOR NCV898031 |
товар відсутній |
||||||||||||||||
CCRACGEVB | onsemi |
Description: BOARD EVAL FOR CCRAC- Packaging: Bulk Voltage - Input: 12 ~ 250 VAC Utilized IC / Part: NSI50010YT1G, NSI50150AD, NSIC2020B, NSIC2030B, NSIC2050B Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
LV5026MCGEVB | onsemi | Description: BOARD EVAL FOR LV5026MC |
товар відсутній |
||||||||||||||||
NCN8024DWGEVB | onsemi |
Description: BOARD EVAL FOR NCN8024DW Packaging: Bulk Function: Smart Card Type: Interface Utilized IC / Part: NCN8024 Supplied Contents: Board(s) Embedded: No |
товар відсутній |
||||||||||||||||
MC74VHCT14ADR2G | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 13165 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
MC34164P-3RPG | onsemi |
Description: IC SUPERVISOR 1 CHANNEL TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: 0°C ~ 70°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 2.71V Supplier Device Package: TO-92 (TO-226) Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||
1N4148-T26A | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 3836 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
2N4403TAR | onsemi |
Description: TRANS PNP 40V 0.6A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
на замовлення 1243 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
2N6520TA | onsemi |
Description: TRANS PNP 350V 0.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
на замовлення 1872 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BC638TA | onsemi |
Description: TRANS PNP 60V 1A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
на замовлення 20915 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FJN3303RTA | onsemi | Description: TRANS PREBIAS NPN 300MW TO92-3 |
товар відсутній |
||||||||||||||||
KSA1281YTA | onsemi |
Description: TRANS PNP 50V 2A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 1317 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
KSD1616AYTA | onsemi |
Description: TRANS NPN 60V 1A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 160MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 750 mW |
на замовлення 7459 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
KSP10TA | onsemi |
Description: RF TRANS NPN 25V 650MHZ TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: TO-92-3 Part Status: Active |
на замовлення 283 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
KSP13TA | onsemi |
Description: TRANS NPN DARL 30V 0.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
на замовлення 972 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
1N4149TR | onsemi |
Description: DIODE GEN PURP 100V 500MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V |
на замовлення 160385 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
74LCX74BQX | onsemi |
Description: IC FF D-TYPE DUAL 1BIT 14DQFN Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 14-DQFN (3x2.5) Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 81750 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BSR57 | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 250 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V |
на замовлення 24688 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FAN3180TSX | onsemi |
Description: IC GATE DRVR LOW-SIDE SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 5V ~ 18V Input Type: Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 19ns, 13ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2.5A, 2.8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 7621 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FDD3690 | onsemi |
Description: MOSFET N-CH 100V 22A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 5.4A, 10V Power Dissipation (Max): 3.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 50 V |
товар відсутній |
||||||||||||||||
FDD4N60NZ | onsemi |
Description: MOSFET N-CH 600V 3.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
товар відсутній |
||||||||||||||||
FDMC8327L | onsemi |
Description: MOSFET N-CH 40V 12A/14A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V |
на замовлення 12825 шт: термін постачання 21-31 дні (днів) |
|
KSC1845FTA |
Виробник: onsemi
Description: TRANS NPN 120V 0.05A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS NPN 120V 0.05A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 3831 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.04 грн |
19+ | 15.13 грн |
100+ | 7.62 грн |
500+ | 5.83 грн |
1000+ | 4.33 грн |
KSC2316YTA |
Виробник: onsemi
Description: TRANS NPN 120V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
Description: TRANS NPN 120V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
товар відсутній
KSC2383OTA |
Виробник: onsemi
Description: TRANS NPN 160V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS NPN 160V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
на замовлення 7675 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.41 грн |
11+ | 25.19 грн |
100+ | 15.08 грн |
500+ | 13.11 грн |
1000+ | 8.91 грн |
KSC2383YTA |
Виробник: onsemi
Description: TRANS NPN 160V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS NPN 160V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
на замовлення 197 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.57 грн |
12+ | 23.21 грн |
100+ | 13.92 грн |
SS8550DTA |
Виробник: onsemi
Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 19606 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.15 грн |
14+ | 19.65 грн |
100+ | 9.93 грн |
500+ | 7.6 грн |
1000+ | 5.64 грн |
FNC42060F |
Виробник: onsemi
Description: MODULE SPM 600V 20A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
Description: MODULE SPM 600V 20A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1394.08 грн |
10+ | 1233.6 грн |
HUF76633S3ST-F085 |
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FAN48632UC33X |
Виробник: onsemi
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Voltage - Output: 3.3V, 3.49V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 2.35V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, GSM PA
Supplier Device Package: 16-WLCSP (1.78x1.78)
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Voltage - Output: 3.3V, 3.49V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 2.35V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, GSM PA
Supplier Device Package: 16-WLCSP (1.78x1.78)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 32.09 грн |
HUF76419S3ST-F085 |
Виробник: onsemi
Description: MOSFET N-CH 60V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FCH104N60F |
Виробник: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 100 V
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 100 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 437.92 грн |
30+ | 336.4 грн |
120+ | 300.98 грн |
FSB50760SFT |
Виробник: onsemi
Description: MOD SPM 600V 1A SPM5N-023
Description: MOD SPM 600V 1A SPM5N-023
на замовлення 180 шт:
термін постачання 21-31 дні (днів)FDMC8360L |
Виробник: onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Description: MOSFET N-CH 40V 27A/80A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 87.99 грн |
6000+ | 81.59 грн |
FDMC86570L |
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/56A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
Description: MOSFET N-CH 60V 18A/56A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 86.22 грн |
FDMS86350 |
Виробник: onsemi
Description: MOSFET N-CH 80V 25A/130A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
Description: MOSFET N-CH 80V 25A/130A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 119.69 грн |
FDMC86340 |
Виробник: onsemi
Description: MOSFET N-CH 80V 14A/48A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3885 pF @ 40 V
Description: MOSFET N-CH 80V 14A/48A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3885 pF @ 40 V
на замовлення 6180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 137.92 грн |
10+ | 119.12 грн |
100+ | 95.72 грн |
500+ | 73.81 грн |
1000+ | 61.16 грн |
FDMC86570L |
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/56A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
Description: MOSFET N-CH 60V 18A/56A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
на замовлення 5615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 177.02 грн |
10+ | 143.21 грн |
100+ | 115.85 грн |
500+ | 96.64 грн |
1000+ | 82.75 грн |
FDMC8360L |
Виробник: onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Description: MOSFET N-CH 40V 27A/80A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
на замовлення 8889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.94 грн |
10+ | 166.35 грн |
100+ | 133.68 грн |
500+ | 103.07 грн |
1000+ | 85.4 грн |
LV5680PGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR LV5680P
Packaging: Bulk
Voltage - Input: 7.5V ~ 16V
Current - Output: 1.3A, 300mA, 300mA, 200mA
Regulator Type: Positive Fixed and Adjustable
Board Type: Fully Populated
Utilized IC / Part: LV5680P
Supplied Contents: Board(s)
Channels per IC: 4 - Quad
Part Status: Active
Description: BOARD EVAL FOR LV5680P
Packaging: Bulk
Voltage - Input: 7.5V ~ 16V
Current - Output: 1.3A, 300mA, 300mA, 200mA
Regulator Type: Positive Fixed and Adjustable
Board Type: Fully Populated
Utilized IC / Part: LV5680P
Supplied Contents: Board(s)
Channels per IC: 4 - Quad
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6796.24 грн |
LV5980MCGEVB |
Виробник: onsemi
Description: -BOARD EVAL FOR LV5980MC
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 4.5V ~ 23V
Current - Output: 3A
Frequency - Switching: 370kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: LV5980MC
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: -BOARD EVAL FOR LV5980MC
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 4.5V ~ 23V
Current - Output: 3A
Frequency - Switching: 370kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: LV5980MC
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4443.15 грн |
LV8829LFQAGEVK |
Виробник: onsemi
Description: EVAL BOARD FOR LV8829LFQA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV8829LFQA
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: Motors (BLDC)
Description: EVAL BOARD FOR LV8829LFQA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV8829LFQA
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: Motors (BLDC)
товар відсутній
MC34063LBBGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR MC34063AP1
Packaging: Bulk
Voltage - Output: -12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: MC34063A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL FOR MC34063AP1
Packaging: Bulk
Voltage - Output: -12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: MC34063A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
товар відсутній
NCN51206GEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCN5120
Packaging: Bulk
Function: KNX
Type: Interface
Utilized IC / Part: NCN5120
Supplied Contents: Board(s)
Embedded: Yes, MCU, 16-Bit
Part Status: Obsolete
Description: BOARD EVAL FOR NCN5120
Packaging: Bulk
Function: KNX
Type: Interface
Utilized IC / Part: NCN5120
Supplied Contents: Board(s)
Embedded: Yes, MCU, 16-Bit
Part Status: Obsolete
товар відсутній
NCN8024RDWGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCN8024RDW
Packaging: Bulk
Function: Smart Card
Type: Interface
Utilized IC / Part: NCN8024R
Supplied Contents: Board(s)
Embedded: No
Description: BOARD EVAL FOR NCN8024RDW
Packaging: Bulk
Function: Smart Card
Type: Interface
Utilized IC / Part: NCN8024R
Supplied Contents: Board(s)
Embedded: No
товар відсутній
NCP1562-100WGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCP1562-100W
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 33V ~ 76V
Current - Output: 30A
Frequency - Switching: 350kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP1562
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 100 W
Description: BOARD EVAL FOR NCP1562-100W
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 33V ~ 76V
Current - Output: 30A
Frequency - Switching: 350kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP1562
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 100 W
товар відсутній
NCP1937BADAPGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCP1937
Description: BOARD EVAL FOR NCP1937
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 23148.46 грн |
NCP3064DFBSTGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCP3064
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Frequency - Switching: 150kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: NCP3064
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL FOR NCP3064
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Frequency - Switching: 150kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: NCP3064
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1, Non-Isolated
товар відсутній
NCV8851-1GEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCV8851-1
Packaging: Bulk
Voltage - Output: 5V, 6V
Voltage - Input: 4.5V ~ 40V
Current - Output: 4A, 70mA
Frequency - Switching: 170kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCV8851-1
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 2, Non-Isolated
Part Status: Active
Description: BOARD EVAL FOR NCV8851-1
Packaging: Bulk
Voltage - Output: 5V, 6V
Voltage - Input: 4.5V ~ 40V
Current - Output: 4A, 70mA
Frequency - Switching: 170kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCV8851-1
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 2, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8886.3 грн |
CCRACGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR CCRAC-
Packaging: Bulk
Voltage - Input: 12 ~ 250 VAC
Utilized IC / Part: NSI50010YT1G, NSI50150AD, NSIC2020B, NSIC2030B, NSIC2050B
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL FOR CCRAC-
Packaging: Bulk
Voltage - Input: 12 ~ 250 VAC
Utilized IC / Part: NSI50010YT1G, NSI50150AD, NSIC2020B, NSIC2030B, NSIC2050B
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 23631.88 грн |
NCN8024DWGEVB |
Виробник: onsemi
Description: BOARD EVAL FOR NCN8024DW
Packaging: Bulk
Function: Smart Card
Type: Interface
Utilized IC / Part: NCN8024
Supplied Contents: Board(s)
Embedded: No
Description: BOARD EVAL FOR NCN8024DW
Packaging: Bulk
Function: Smart Card
Type: Interface
Utilized IC / Part: NCN8024
Supplied Contents: Board(s)
Embedded: No
товар відсутній
MC74VHCT14ADR2G |
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 13165 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.39 грн |
10+ | 33 грн |
25+ | 31.02 грн |
100+ | 22.06 грн |
250+ | 18.78 грн |
500+ | 17.84 грн |
1000+ | 13.39 грн |
MC34164P-3RPG |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: 0°C ~ 70°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.71V
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: 0°C ~ 70°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.71V
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
1N4148-T26A |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 3836 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.4 грн |
96+ | 2.88 грн |
178+ | 1.54 грн |
500+ | 1.14 грн |
1000+ | 0.79 грн |
2000+ | 0.66 грн |
2N4403TAR |
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 1243 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.04 грн |
19+ | 14.99 грн |
100+ | 7.3 грн |
500+ | 5.72 грн |
1000+ | 3.97 грн |
2N6520TA |
Виробник: onsemi
Description: TRANS PNP 350V 0.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS PNP 350V 0.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
на замовлення 1872 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.33 грн |
19+ | 14.72 грн |
100+ | 7.45 грн |
500+ | 5.7 грн |
1000+ | 4.23 грн |
BC638TA |
Виробник: onsemi
Description: TRANS PNP 60V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
на замовлення 20915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.59 грн |
16+ | 17.18 грн |
100+ | 8.69 грн |
500+ | 6.65 грн |
1000+ | 4.93 грн |
KSA1281YTA |
Виробник: onsemi
Description: TRANS PNP 50V 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
13+ | 22.45 грн |
100+ | 15.59 грн |
500+ | 11.42 грн |
1000+ | 9.28 грн |
KSD1616AYTA |
Виробник: onsemi
Description: TRANS NPN 60V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Description: TRANS NPN 60V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
на замовлення 7459 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.01 грн |
14+ | 20.19 грн |
100+ | 12.14 грн |
500+ | 10.55 грн |
1000+ | 7.17 грн |
KSP10TA |
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Active
Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Active
на замовлення 283 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.59 грн |
14+ | 20.19 грн |
25+ | 16.95 грн |
100+ | 10.07 грн |
250+ | 7.78 грн |
KSP13TA |
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN DARL 30V 0.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
на замовлення 972 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.3 грн |
16+ | 17.53 грн |
100+ | 8.83 грн |
500+ | 6.76 грн |
1N4149TR |
Виробник: onsemi
Description: DIODE GEN PURP 100V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Description: DIODE GEN PURP 100V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
на замовлення 160385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 7.11 грн |
56+ | 4.93 грн |
103+ | 2.67 грн |
500+ | 1.97 грн |
1000+ | 1.37 грн |
2000+ | 1.13 грн |
5000+ | 1.05 грн |
74LCX74BQX |
Виробник: onsemi
Description: IC FF D-TYPE DUAL 1BIT 14DQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-DQFN (3x2.5)
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14DQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-DQFN (3x2.5)
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 81750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.72 грн |
10+ | 51.27 грн |
25+ | 48.66 грн |
100+ | 35.07 грн |
250+ | 30.99 грн |
500+ | 29.36 грн |
1000+ | 22.46 грн |
BSR57 |
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 250 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 250 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
на замовлення 24688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.59 грн |
15+ | 19.17 грн |
100+ | 11.48 грн |
500+ | 9.98 грн |
1000+ | 6.78 грн |
FAN3180TSX |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 19ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 19ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7621 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 92.42 грн |
10+ | 79.62 грн |
25+ | 75.55 грн |
100+ | 54.44 грн |
250+ | 48.11 грн |
500+ | 45.58 грн |
1000+ | 34.87 грн |
FDD3690 |
Виробник: onsemi
Description: MOSFET N-CH 100V 22A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 50 V
Description: MOSFET N-CH 100V 22A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 50 V
товар відсутній
FDD4N60NZ |
Виробник: onsemi
Description: MOSFET N-CH 600V 3.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 600V 3.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
FDMC8327L |
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/14A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Description: MOSFET N-CH 40V 12A/14A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
на замовлення 12825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.36 грн |
10+ | 59.35 грн |
100+ | 46.19 грн |
500+ | 36.74 грн |
1000+ | 29.93 грн |