Результат пошуку "068065" : 15

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068065-000 TE Connectivity Heat Shrink Molded Boot ST Fluoroelastomer
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+15250.64 грн
2+ 15120.13 грн
3+ 14991.84 грн
5+ 12726.66 грн
10+ 11348.63 грн
74HC564N,652 74HC564N,652 NXP USA Inc. 74HC564.pdf Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)
1403+18.54 грн
Мінімальне замовлення: 1403
IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 Infineon Technologies IPP032N06N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e01239f2567817160 Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
192+103.97 грн
Мінімальне замовлення: 192
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Infineon Technologies ipb037n06n3g_rev1.01.pdf Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
7+48.19 грн
Мінімальне замовлення: 7
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Infineon Technologies Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+143.44 грн
10+ 114.99 грн
100+ 91.51 грн
500+ 72.67 грн
Мінімальне замовлення: 2
PSMN6R4-30MLDX PSMN6R4-30MLDX Nexperia USA Inc. PSMN6R4-30MLD.pdf Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+16.22 грн
Мінімальне замовлення: 1500
PSMN6R4-30MLDX PSMN6R4-30MLDX Nexperia USA Inc. PSMN6R4-30MLD.pdf Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
7+43.03 грн
10+ 35.36 грн
100+ 24.61 грн
500+ 18.04 грн
Мінімальне замовлення: 7
60030680655 HARTING 60030680655.pdf Description: HMIK METAL-HOOD LATCH 68P RACE W
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SP000680652 SP000680652 Infineon Technologies ipp037n06l3_rev2.5.pdf Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262
товар відсутній
202K185-12-0 TE Connectivity Raychem Cable Protection DDEController?Action=srchrtrv&DocNm=202K1XX-12&DocType=Customer+Drawing&DocLang=English Description: HEATSHRINK BOOT SZ85 BLACK
Features: Chemical Resistant, Lip
Packaging: Bulk
Color: Black
Material: Fluoroelastomer (FKM), Flexible
Type: Boot
Shell Size - Insert: 85
Large Diameter Supplied: 2.600" (66.04mm)
Large Diameter Recovered: 1.752" (44.50mm)
Small Diameter Supplied: 1.496" (38.00mm)
Small Diameter Recovered: 0.661" (16.79mm)
Large Recovered Length: 3.540" (89.92mm)
Small Recovered Length: 2.760" (70.10mm)
Total Length Recovered: 6.690" (169.93mm)
Part Status: Active
товар відсутній
74HC564N,652 74HC564N,652 NXP Semiconductors 74hc564_3.pdf Flip Flop D-Type Bus Interface Pos-Edge 3-ST 1-Element 20-Pin PDIP Bulk
товар відсутній
74HC564N,652 74HC564N,652 NXP USA Inc. 74HC564.pdf Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 Infineon Technologies IPP032N06N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e01239f2567817160 Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товар відсутній
IPI037N08N3GXKSA1 IPI037N08N3GXKSA1 Infineon Technologies IPP037N08N3%2CIPI037N08N3.pdf Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
товар відсутній
PSMN6R4-30MLDX PSMN6R4-30MLDX NEXPERIA psmn6r4-30mld.pdf N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33
товар відсутній
068065-000
Виробник: TE Connectivity
Heat Shrink Molded Boot ST Fluoroelastomer
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+15250.64 грн
2+ 15120.13 грн
3+ 14991.84 грн
5+ 12726.66 грн
10+ 11348.63 грн
74HC564N,652 74HC564.pdf
74HC564N,652
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1403+18.54 грн
Мінімальне замовлення: 1403
IPI032N06N3GAKSA1 IPP032N06N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e01239f2567817160
IPI032N06N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
192+103.97 грн
Мінімальне замовлення: 192
IPI040N06N3GXKSA1 ipb037n06n3g_rev1.01.pdf
IPI040N06N3GXKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+48.19 грн
Мінімальне замовлення: 7
IPI040N06N3GXKSA1
IPI040N06N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+143.44 грн
10+ 114.99 грн
100+ 91.51 грн
500+ 72.67 грн
Мінімальне замовлення: 2
PSMN6R4-30MLDX PSMN6R4-30MLD.pdf
PSMN6R4-30MLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+16.22 грн
Мінімальне замовлення: 1500
PSMN6R4-30MLDX PSMN6R4-30MLD.pdf
PSMN6R4-30MLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+43.03 грн
10+ 35.36 грн
100+ 24.61 грн
500+ 18.04 грн
Мінімальне замовлення: 7
60030680655 60030680655.pdf
Виробник: HARTING
Description: HMIK METAL-HOOD LATCH 68P RACE W
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SP000680652 ipp037n06l3_rev2.5.pdf
SP000680652
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262
товар відсутній
202K185-12-0 DDEController?Action=srchrtrv&DocNm=202K1XX-12&DocType=Customer+Drawing&DocLang=English
Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK BOOT SZ85 BLACK
Features: Chemical Resistant, Lip
Packaging: Bulk
Color: Black
Material: Fluoroelastomer (FKM), Flexible
Type: Boot
Shell Size - Insert: 85
Large Diameter Supplied: 2.600" (66.04mm)
Large Diameter Recovered: 1.752" (44.50mm)
Small Diameter Supplied: 1.496" (38.00mm)
Small Diameter Recovered: 0.661" (16.79mm)
Large Recovered Length: 3.540" (89.92mm)
Small Recovered Length: 2.760" (70.10mm)
Total Length Recovered: 6.690" (169.93mm)
Part Status: Active
товар відсутній
74HC564N,652 74hc564_3.pdf
74HC564N,652
Виробник: NXP Semiconductors
Flip Flop D-Type Bus Interface Pos-Edge 3-ST 1-Element 20-Pin PDIP Bulk
товар відсутній
74HC564N,652 74HC564.pdf
74HC564N,652
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
IPI032N06N3GAKSA1 IPP032N06N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e01239f2567817160
IPI032N06N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товар відсутній
IPI037N08N3GXKSA1 IPP037N08N3%2CIPI037N08N3.pdf
IPI037N08N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
товар відсутній
PSMN6R4-30MLDX psmn6r4-30mld.pdf
PSMN6R4-30MLDX
Виробник: NEXPERIA
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33
товар відсутній