Результат пошуку "068065" : 15
Вид перегляду :
Мінімальне замовлення: 1403
Мінімальне замовлення: 192
Мінімальне замовлення: 7
Мінімальне замовлення: 2
Мінімальне замовлення: 1500
Мінімальне замовлення: 7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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068065-000 | TE Connectivity | Heat Shrink Molded Boot ST Fluoroelastomer |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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74HC564N,652 | NXP USA Inc. |
Description: IC FF D-TYPE SNGL 8BIT 20DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State, Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 137 MHz Input Capacitance: 3.5 pF Supplier Device Package: 20-DIP Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF Part Status: Obsolete Number of Bits per Element: 8 |
на замовлення 1403 шт: термін постачання 21-31 дні (днів) |
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IPI032N06N3GAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
на замовлення 865 шт: термін постачання 21-31 дні (днів) |
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IPI040N06N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IPI040N06N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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PSMN6R4-30MLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 66A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN6R4-30MLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 66A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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60030680655 | HARTING |
Description: HMIK METAL-HOOD LATCH 68P RACE W Packaging: Bulk Part Status: Obsolete |
товар відсутній |
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SP000680652 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 |
товар відсутній |
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202K185-12-0 | TE Connectivity Raychem Cable Protection |
Description: HEATSHRINK BOOT SZ85 BLACK Features: Chemical Resistant, Lip Packaging: Bulk Color: Black Material: Fluoroelastomer (FKM), Flexible Type: Boot Shell Size - Insert: 85 Large Diameter Supplied: 2.600" (66.04mm) Large Diameter Recovered: 1.752" (44.50mm) Small Diameter Supplied: 1.496" (38.00mm) Small Diameter Recovered: 0.661" (16.79mm) Large Recovered Length: 3.540" (89.92mm) Small Recovered Length: 2.760" (70.10mm) Total Length Recovered: 6.690" (169.93mm) Part Status: Active |
товар відсутній |
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74HC564N,652 | NXP Semiconductors | Flip Flop D-Type Bus Interface Pos-Edge 3-ST 1-Element 20-Pin PDIP Bulk |
товар відсутній |
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74HC564N,652 | NXP USA Inc. |
Description: IC FF D-TYPE SNGL 8BIT 20DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State, Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 137 MHz Input Capacitance: 3.5 pF Supplier Device Package: 20-DIP Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF Part Status: Obsolete Number of Bits per Element: 8 |
товар відсутній |
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IPI032N06N3GAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO262-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
товар відсутній |
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IPI037N08N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V |
товар відсутній |
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PSMN6R4-30MLDX | NEXPERIA | N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33 |
товар відсутній |
068065-000 |
Виробник: TE Connectivity
Heat Shrink Molded Boot ST Fluoroelastomer
Heat Shrink Molded Boot ST Fluoroelastomer
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 15250.64 грн |
2+ | 15120.13 грн |
3+ | 14991.84 грн |
5+ | 12726.66 грн |
10+ | 11348.63 грн |
74HC564N,652 |
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1403+ | 18.54 грн |
IPI032N06N3GAKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
192+ | 103.97 грн |
IPI040N06N3GXKSA1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 48.19 грн |
IPI040N06N3GXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 143.44 грн |
10+ | 114.99 грн |
100+ | 91.51 грн |
500+ | 72.67 грн |
PSMN6R4-30MLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 16.22 грн |
PSMN6R4-30MLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 43.03 грн |
10+ | 35.36 грн |
100+ | 24.61 грн |
500+ | 18.04 грн |
60030680655 |
товар відсутній
SP000680652 |
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262
товар відсутній
202K185-12-0 |
Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK BOOT SZ85 BLACK
Features: Chemical Resistant, Lip
Packaging: Bulk
Color: Black
Material: Fluoroelastomer (FKM), Flexible
Type: Boot
Shell Size - Insert: 85
Large Diameter Supplied: 2.600" (66.04mm)
Large Diameter Recovered: 1.752" (44.50mm)
Small Diameter Supplied: 1.496" (38.00mm)
Small Diameter Recovered: 0.661" (16.79mm)
Large Recovered Length: 3.540" (89.92mm)
Small Recovered Length: 2.760" (70.10mm)
Total Length Recovered: 6.690" (169.93mm)
Part Status: Active
Description: HEATSHRINK BOOT SZ85 BLACK
Features: Chemical Resistant, Lip
Packaging: Bulk
Color: Black
Material: Fluoroelastomer (FKM), Flexible
Type: Boot
Shell Size - Insert: 85
Large Diameter Supplied: 2.600" (66.04mm)
Large Diameter Recovered: 1.752" (44.50mm)
Small Diameter Supplied: 1.496" (38.00mm)
Small Diameter Recovered: 0.661" (16.79mm)
Large Recovered Length: 3.540" (89.92mm)
Small Recovered Length: 2.760" (70.10mm)
Total Length Recovered: 6.690" (169.93mm)
Part Status: Active
товар відсутній
74HC564N,652 |
Виробник: NXP Semiconductors
Flip Flop D-Type Bus Interface Pos-Edge 3-ST 1-Element 20-Pin PDIP Bulk
Flip Flop D-Type Bus Interface Pos-Edge 3-ST 1-Element 20-Pin PDIP Bulk
товар відсутній
74HC564N,652 |
Виробник: NXP USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 137 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-DIP
Max Propagation Delay @ V, Max CL: 28ns @ 6V, 50pF
Part Status: Obsolete
Number of Bits per Element: 8
товар відсутній
IPI032N06N3GAKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товар відсутній
IPI037N08N3GXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Description: MOSFET N-CH 80V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
товар відсутній
PSMN6R4-30MLDX |
Виробник: NEXPERIA
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33
товар відсутній