Виробник: Pulse Electronics
RF Inductors - SMD 0402 10nH

Виробник: Boyd Laconia, LLC
Description: MAX CLIP TO-220 STD-FORCE LONG
Packaging: Bulk
For Use With/Related Products: Max Clip System™
Accessory Type: Clip

Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 4 µA

Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA

Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active

Виробник: TE Connectivity Passive Product
Description: FIXED IND 10NH 200MA 1.35OHM SMD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Thin Film
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 1.35Ohm Max
Q @ Freq: 13 @ 500MHz
Frequency - Self Resonant: 4.5GHz
Inductance Frequency - Test: 500 MHz
Supplier Device Package: 0402 (1005 Metric)
Height - Seated (Max): 0.015" (0.37mm)
Inductance: 10 nH
Current Rating (Amps): 200 mA

Виробник: POKÓJ
Category: Rail mounted connectors
Description: Protection; green; Width: 10mm; polyamide; -25÷120°C; UL94V-0
Type of connector accessories: protection
Colour: green
Width: 10mm
Body material: polyamide
Operating temperature: -25...120°C
Flammability rating: UL94V-0
Related items: ZUG-10

Виробник: POKУJ
10N-GN Rail mounted connectors

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: TWS PB RND EXTD/SHRD MOM 2NO
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk
Part Status: Obsolete

Виробник: IDEC
Description: TWS PUSH BUTTON
Packaging: Bulk

Виробник: IDEC
Description: TWS PUSH BUTTON
Packaging: Bulk
Part Status: Active

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk
Part Status: Obsolete

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk
Part Status: Obsolete

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: IDEC
Description: PUSHBUTTON 30MM
Packaging: Bulk

Виробник: Pulse Electronics
RF Inductors - SMD Chilisin RF inductor Wire Wound-STD

Виробник: Pulse Electronics
RF Inductors - SMD Chilisin RF inductor Wire Wound-STD

Виробник: Pulse Electronics
RF Inductors - SMD Chilisin RF inductor Wire Wound-STD

Виробник: Pulse Electronics
RF Inductors - SMD Chilisin RF inductor Wire Wound-Low Profile

Виробник: Pulse Electronics
RF Inductors - SMD Chilisin RF inductor Wire Wound-STD

Виробник: Bourns Inc.
Description: FIXED IND 10NH 600MA 80 MOHM SMD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: 1008 (2520 Metric)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Drum Core, Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 80mOhm Max
Q @ Freq: 50 @ 500MHz
Frequency - Self Resonant: 4.1GHz
Material - Core: Ceramic
Inductance Frequency - Test: 100 MHz
Supplier Device Package: 1008 (2520 Metric)
Height - Seated (Max): 0.071" (1.80mm)
Inductance: 10 nH
Current Rating (Amps): 600 mA

Виробник: Vishay Dale
Description: FIXED IND 10NH 200MA 1.35OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Thin Film
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 1.35Ohm Max
Q @ Freq: 7 @ 100MHz
Frequency - Self Resonant: 4.5GHz
Inductance Frequency - Test: 500 MHz
Supplier Device Package: 0402 (1005 Metric)
Height - Seated (Max): 0.015" (0.37mm)
Inductance: 10 nH
Current Rating (Amps): 200 mA

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 95A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 95A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 67A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 53A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 53A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V

Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 4 µA

Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA

Виробник: ITT Cannon, LLC
Description: CIRCULAR
Packaging: Box