Технічний опис 15ETH03S IR
Description: DIODE GEN PURP 300V 15A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 40 ns, Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A, Current - Reverse Leakage @ Vr: 40 µA @ 300 V.
Інші пропозиції 15ETH03S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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15ETH03S | Виробник : Vishay |
 Diode Switching 300V 15A 3-Pin(2+Tab) D2PAK Tube |
товар відсутній |
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15ETH03S | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 15A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 300 V |
товар відсутній |