15KP17CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE BP 17VRWM 29.3VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 515.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.99V
Voltage - Clamping (Max) @ Ipp: 29.3V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 669.67 грн |
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Технічний опис 15KP17CA MDE Semiconductor Inc
Description: TVS DIODE BP 17VRWM 29.3VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 515.4A, Voltage - Reverse Standoff (Typ): 17V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 18.99V, Voltage - Clamping (Max) @ Ipp: 29.3V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No.
Інші пропозиції 15KP17CA
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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15KP17CA | Виробник : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18.99V; 515.4A; bidirectional; R6; 15kW; bulk Type of diode: TVS Max. off-state voltage: 17V Breakdown voltage: 18.99V Max. forward impulse current: 515.4A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10mA Peak pulse power dissipation: 15kW Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товар відсутній |
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15KP17CA | Виробник : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18.99V; 515.4A; bidirectional; R6; 15kW; bulk Type of diode: TVS Max. off-state voltage: 17V Breakdown voltage: 18.99V Max. forward impulse current: 515.4A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10mA Peak pulse power dissipation: 15kW Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |