15KP260CA

15KP260CA MDE Semiconductor Inc


15KP_Series.pdf Виробник: MDE Semiconductor Inc
Description: TVS DIODE BP 260VRWM 416.7VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 290.4V
Voltage - Clamping (Max) @ Ipp: 416.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+672.13 грн
Відгуки про товар
Написати відгук

Технічний опис 15KP260CA MDE Semiconductor Inc

Description: TVS DIODE BP 260VRWM 416.7VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 36.2A, Voltage - Reverse Standoff (Typ): 260V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 290.4V, Voltage - Clamping (Max) @ Ipp: 416.7V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No.

Інші пропозиції 15KP260CA

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
15KP260CA 15KP260CA Виробник : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 290.4V; 36.2A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 260V
Breakdown voltage: 290.4V
Max. forward impulse current: 36.2A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
15KP260CA 15KP260CA Виробник : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 290.4V; 36.2A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 260V
Breakdown voltage: 290.4V
Max. forward impulse current: 36.2A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній